STGF30M65DF2

STGF30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a TO-220FP package Datasheet - production data Features       6 µs of short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 30 A Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications    TO-220FP Figure 1: Internal schematic diagram Description C (2) This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. G (1) Sc12850_no_tab Motor control UPS PFC E (3) Table 1: Device summary Order code Marking Package Packing STGF30M65DF2 G30M65DF2 TO-220FP Tube April 2017 DocID027430 Rev 5 This is information on a product in full production. 1/16 www.st.com Contents STGF30M65DF2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ................................................................................... 11 4 Package information ..................................................................... 12 4.1 5 2/16 TO-220FP package information ...................................................... 13 Revision history ............................................................................ 15 DocID027430 Rev 5 STGF30M65DF2 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGE = 0 V) 650 V IC(1) Continuous collector current at TC = 25 °C 60 A IC(1) Continuous collector current at TC = 100 °C 30 A ICP(2) Pulsed collector current 120 A VGE Gate-emitter voltage ±20 V IF (1) Continuous forward current at TC = 25 °C 60 A IF (1) Continuous forward current at TC = 100 °C 30 A IFP(2) Pulsed forward current 120 A VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s, TC = 25 °C) 2.5 kV PTOT Total dissipation at TC = 25 °C 38 W TSTG Storage temperature range -55 to 150 °C Operating junction temperature range -55 to 175 °C Value Unit TJ Notes: (1)Limited (2)Pulse by maximum junction temperature. width limited by maximum junction temperature. Table 3: Thermal data Symbol Parameter RthJC Thermal resistance junction-case IGBT 4 °C/W RthJC Thermal resistance junction-case diode 5 °C/W RthJA Thermal resistance junction-ambient 62.5 °C/W DocID027430 Rev 5 3/16 Electrical characteristics 2 STGF30M65DF2 Electrical characteristics TC = 25 °C unless otherwise specified Table 4: Static characteristics Symbol V(BR)CES VCE(sat) VF Parameter Collector-emitter breakdown voltage Collector-emitter saturation voltage Forward on-voltage Test conditions Min. VGE = 0 V, IC = 250 µA 650 Typ. 1.55 VGE = 15 V, IC = 30 A, TJ = 125 °C 1.95 VGE = 15 V, IC = 30 A, TJ = 175 °C 2.1 IF = 30 A 1.85 IF = 30 A, TJ = 125 °C 1.6 IF = 30 A, TJ = 175 °C 1.5 Gate threshold voltage VCE = VGE, IC = 500 µA ICES Collector cut-off current IGES Gate-emitter leakage current 5 Unit V VGE = 15 V, IC = 30 A VGE(th) Max. 6 2.0 V 2.65 V 7 V VGE = 0 V, VCE = 650 V 25 µA VCE = 0 V, VGE = ±20 V ±250 µA Unit Table 5: Dynamic characteristics Symbol Cies 4/16 Parameter Test conditions Input capacitance VCE = 25 V, f = 1 MHz, VGE = 0 V Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge VCC = 520 V, IC = 30 A, VGE = 0 to 15 V (see Figure 30: " Gate charge test circuit") DocID027430 Rev 5 Min. Typ. Max. - 2490 - - 143 - - 46 - - 80 - - 18 - - 32 - pF nC STGF30M65DF2 Electrical characteristics Table 6: IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Parameter Test conditions Typ. Max. Unit Turn-on delay time 31.6 - ns Current rise time 13.4 - ns 1791 - A/µs 115 - ns 110 - ns 0.3 - mJ Turn-on current slope Turn-off-delay time Current fall time Min. VCE = 400 V, IC = 30 A, VGE = 15 V, RG = 10 Ω (see Figure 29: " Test circuit for inductive load switching" ) Eon(1) Turn-on switching energy (2) Turn-off switching energy 0.96 - mJ Total switching energy 1.26 - mJ Turn-on delay time 30 - ns Current rise time 17 - ns 1435 - A/µs 116 - ns 194 - ns 0.67 - mJ Eoff Ets td(on) tr (di/dt)on td(off) tf Turn-on current slope Turn-off-delay time Current fall time VCE = 400 V, IC = 30 A, VGE = 15 V, RG = 10 Ω, TJ = 175 °C (see Figure 29: " Test circuit for inductive load switching" ) Eon(1) Turn-on switching energy (2) Turn-off switching energy 1.36 - mJ Ets Total switching energy 2.03 - mJ tsc Short-circuit withstand time Eoff VCC ≤ 400 V, VGE = 13 V, TJstart = 150 °C 10 - VCC ≤ 400 V, VGE = 15 V, TJstart = 150 °C 6 - µs Notes: (1)Including the reverse recovery of the diode. (2)Including the tail of the collector current. Table 7: Diode switching characteristics (inductive load) Symbol Parameter Test conditions trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current dIrr/dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current dIrr/dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy IF = 30 A, VR = 400 V, VGE = 15 V, di/dt = 1000 A/µs (see Figure 29: " Test circuit for inductive load switching") IF = 30 A, VR = 400 V, VGE = 15 V, di/dt = 1000 A/µs, TJ = 175 °C (see Figure 29: " Test circuit for inductive load switching") DocID027430 Rev 5 Min. Typ. Max. Unit - 140 - ns - 880 - nC - 17 - A - 650 - A/µs - 115 - µJ - 244 - ns - 2743 - nC - 25 - A - 220 - A/µs - 320 - µJ 5/16 Electrical characteristics 2.1 STGF30M65DF2 Electrical characteristics (curves) Figure 2: Power dissipation vs. case temperature GIPD170420151008FSR Ptot (W) Figure 3: Collector current vs. case temperature GIPD170420151016FSR IC (A) 32 20 24 15 16 10 5 8 VGE ≥ 15V, TJ ≤ 175 °C 0 -50 0 50 VGE ≥ 15V, TJ ≤ 175 °C 100 150 Figure 4: Output characteristics (TJ = 25 °C) GIPD100420151008FSR IC (A) VGE=15V 0 -50 TC(°C) 0 50 100 150 TC(°C) Figure 5: Output characteristics (TJ = 175 °C) GIPD100420151025FSR IC (A) VGE=15V 13V 100 100 13V 11V 80 80 11V 60 60 40 9V 20 40 9V 20 7V 0 0 1 2 3 4 5 VCE(V) Figure 6: VCE(sat) vs. junction temperature GIPD281020131418FSR VCE(sat) (V) 0 0 IC= 60A 2 3 4 VGE= 15V TJ= 175°C 4 TJ= 25°C IC= 30A 3 2.2 1.8 2 IC= 15A 1.4 6/16 VCE(V) GIPD281020131116FSR 5 2.6 1 -50 5 Figure 7: VCE(sat) vs. collector current VCE(sat) (V) VGE= 15V 3 1 TJ= -40°C 1 0 50 100 150 TJ(°C) DocID027430 Rev 5 0 0 20 40 60 80 100 IC(A) STGF30M65DF2 Electrical characteristics Figure 8: Collector current vs. switching frequency GIPD170420151024FSR Ic [A] Figure 9: Forward bias safe operating area GIPD170420151029FSR IC (A) 20 100 16 Tc=80°C Tc=100 °C 12 1 µs 4 10 µs 10 8 Single pulse Tc= 25°C, TJ ≤ 175°C VGE= 15V rectangular current shape, (duty cycle=0.5, VCC = 400V, RG=10 Ω, VGE = 0/15 V, TJ =175°C) 0 1 Figure 10: Transfer characteristics VCE= 5V 1 10 1 ms VCE(V) 100 Figure 11: Diode VF vs. forward current GIPD100420151152FSR IC (A) 100 1 f [kHz] 10 100 µs GIPD100420151209FSR VF (V) 3 TJ= 25 °C TJ= -40°C 2.5 80 TJ= 175°C 2 60 1.5 40 20 0 5 0.5 6 7 8 9 10 11 GIPD100420151232FSR VGE(th) (norm) IC= 500µA VCE= VGE 1.1 0 0 VGE(V) Figure 12: Normalized VGE(th) vs. junction temperature 0.8 0.95 150 80 100 IF(A) GIPD100420151240FSR 1.1 1.0 100 60 IC= 250µA 0.9 50 40 V(BR)ces (norm) 1.05 0 20 Figure 13: Normalized V(BR)CES vs. junction temperature 1.0 0.7 -50 TJ= 25°C 1 TJ= 175 °C TJ(°C) 0.9 -50 DocID027430 Rev 5 0 50 100 150 TJ(°C) 7/16 Electrical characteristics STGF30M65DF2 Figure 14: Capacitance variations Figure 15: Gate charge vs. gate-emitter voltage GIPD100420151249FSR C (pF) GIPD100420151257FSR VGE (V) f= 1MHz IC= 30A IG= 1mA VCC= 520V 16 Cies 1000 12 8 100 10 0.1 1 10 100 Coes 4 Cres VCE(V) 0 Figure 16: Switching energy vs. collector current E (mJ) GIPD100420151322FSR VCC = 400V, VGE = 15V, RG = 10Ω, TJ = 175°C 0 40 60 80 Qg(nC) Figure 17: Switching energy vs. gate resistance GIPD100420151328FSR E (mJ) 4 VCC = 400 V, VGE = 15 V, IC = 30 A, TJ = 175 °C 4 3 20 3 Etot Etot Eoff 2 2 Eoff 1 0 0 1 Eon 10 20 30 40 Eon 50 Figure 18: Switching energy vs. temperature E (mJ) 0 0 60 IC(A) GIPD100420151336FSR VCC= 400V, VGE= 15V, RG= 10Ω, IC= 30A 40 60 80 100 RG(Ω) Figure 19: Switching energy vs. collector emitter voltage E (mJ) 2.5 2 1.5 20 GIPD100420151340FSR TJ= 175°C, VGE= 15V, RG= 10Ω, IC= 30A 2 Etot Etot Eoff Eoff 1.5 1 1 0.5 Eon 0.5 Eon 0 0 8/16 50 100 150 TJ(°C) DocID027430 Rev 5 0 150 250 350 450 VCE(V) STGF30M65DF2 Electrical characteristics Figure 20: Short-circuit time and current vs. VGE tsc (µs) Figure 21: Switching times vs. collector current GIPD100420151351FSR ISC(A) VCC ≤ 400V, TJ ≤ 150°C ISC 20 t (ns) GIPD100420151403FSR TJ= 175°C, VGE= 15V, RG= 10Ω, VCC= 400V 150 tf tSC 100 td(off) 120 15 td(on) 90 10 tr 10 60 5 0 9 10 11 12 13 14 15 1 0 30 VGE(V) Figure 22: Switching times vs. gate resistance Irm (A) TJ= 175°C, VGE= 15V, IC= 30A, VCC= 400V 40 tf 100 20 30 40 50 IC(A) Figure 23: Reverse recovery current vs. diode current slope GIPD100420151412FSR t (ns) 10 GIPD100420151417FSR IF = 30A, VCC = 400V VGE = 15V 35 30 td(off) TJ =175°C 25 td(on) 20 tr 10 0 20 40 60 80 15 200 RG(Ω) Figure 24: Reverse recovery time vs. diode current slope IF = 30A, VCC = 400V, VGE = 15V 280 1000 1400 1800 di/dt(A/µs) Figure 25: Reverse recovery charge vs. diode current slope GIPD100420151434FSR trr (ns) 600 Qrr (µC) GIPD100420151442FSR IF = 30A, VCC = 400V, VGE = 15V 2.9 260 2.8 240 TJ =175°C 2.7 220 2.6 TJ =175°C 200 180 200 600 1000 1400 1800 di/dt(A/µs) DocID027430 Rev 5 2.5 200 600 1000 1400 1800 di/dt(A/µs) 9/16 Electrical characteristics STGF30M65DF2 Figure 26: Reverse recovery energy vs. diode current slope GIPD100420151455FSR Err (mJ) IF = 30A, VCC = 400V, VGE = 15V 0.38 0.34 0.3 TJ =175°C 0.26 0.22 0.18 200 600 1000 1400 1800 di/dt(A/µs) Figure 27: Thermal impedance for IGBT Figure 28: Thermal impedance for diode 10/16 DocID027430 Rev 5 STGF30M65DF2 3 Test circuits Test circuits Figure 29: Test circuit for inductive load switching C A Figure 30: Gate charge test circuit A L=100 µH G E B B 3.3 µF C G + RG VCC 1000 µF D.U.T E - AM01504v 1 Figure 31: Switching waveform Figure 32: Diode reverse recovery waveform di/dt Qrr trr IF ts tf t IRRM 10% IRRM VRRM dv/dt AM01507v1 DocID027430 Rev 5 11/16 Package information 4 STGF30M65DF2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 12/16 DocID027430 Rev 5 STGF30M65DF2 4.1 Package information TO-220FP package information Figure 33: TO-220FP package outline 7012510_Rev_12_B DocID027430 Rev 5 13/16 Package information STGF30M65DF2 Table 8: TO-220FP package mechanical data mm Dim. Min. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 14/16 Typ. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 DocID027430 Rev 5 STGF30M65DF2 5 Revision history Revision history Table 9: Document revision history Date Revision Changes 28-Jan-2015 1 First release. 04-May-2015 2 Added STGF30M65DF2 electrical characteristics curves. 19-Oct-2015 3 Changed Figure 27: "Thermal impedance for IGBT". 08-Feb-2016 4 Datasheet promoted from preliminary data to production data Minor text changes 5 Updated document title. Updated Table 4: "Static characteristics", Table 6: "IGBT switching characteristics (inductive load)" and Table 7: "Diode switching characteristics (inductive load)". Updated Figure 13: "Normalized V(BR)CES vs. junction temperature ". Updated Section 4.1: "TO-220FP package information". Minor text changes 11-Apr-2017 DocID027430 Rev 5 15/16 STGF30M65DF2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved 16/16 DocID027430 Rev 5