STGF4M65DF2
Trench gate field-stop IGBT, M series 650 V, 4 A low loss
Datasheet - production data
Features
6 µs of short-circuit withstand time
VCE(sat) = 1.6 V (typ.) @ IC = 4 A
Tight parameter distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
Applications
TO-220FP
Figure 1: Internal schematic diagram
Description
C (2)
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series
IGBTs, which represent an optimal balance
between inverter system performance and
efficiency where low-loss and short-circuit
functionality are essential. Furthermore, the
positive VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
G (1)
Sc12850_no_tab
Motor control
UPS
PFC
E (3)
Table 1: Device summary
Order code
Marking
Package
Packing
STGF4M65DF2
G4M65DF2
TO-220FP
Tube
November 2016
DocID028678 Rev 4
This is information on a product in full production.
1/16
www.st.com
Contents
STGF4M65DF2
Contents
1
Electrical ratings ............................................................................. 3
2
Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3
Test circuits ................................................................................... 11
4
Package information ..................................................................... 12
4.1
5
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TO-220FP package information ...................................................... 13
Revision history ............................................................................ 15
DocID028678 Rev 4
STGF4M65DF2
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
VCES
Collector-emitter voltage (VGE = 0 V)
IC(1)
Value
Unit
650
V
Continuous collector current at TC = 25 °C
8
A
Continuous collector current at TC = 100 °C
4
A
ICP(2)
Pulsed collector current
16
A
VGE
Gate-emitter voltage
±20
V
Continuous forward current at TC = 25 °C
8
A
IF(1)
Continuous forward current at TC = 100 °C
4
A
IFP(2)
Pulsed forward current
16
A
VISO
Insulation withstand voltage (RMS) from all three leads to external
heat sink (t=1s, TC= 25 °C)
2.5
kV
PTOT
Total dissipation at TC = 25 °C
23
W
TSTG
Storage temperature range
- 55 to 150
°C
Operating junction temperature range
- 55 to 175
°C
Value
Unit
TJ
Notes:
(1)Limited
(2)Pulse
by maximum junction temperature.
width limited by maximum junction temperature.
Table 3: Thermal data
Symbol
Parameter
RthJC
Thermal resistance junction-case IGBT
6.5
°C/W
RthJC
Thermal resistance junction-case diode
7
°C/W
RthJA
Thermal resistance junction-ambient
62.5
°C/W
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Electrical characteristics
2
STGF4M65DF2
Electrical characteristics
TC = 25 °C unless otherwise specified
Table 4: Static characteristics
Symbol
V(BR)CES
VCE(sat)
VF
Parameter
Collector-emitter breakdown
voltage
Collector-emitter saturation
voltage
Forward on-voltage
Test conditions
Min.
VGE = 0 V, IC = 250 µA
650
Typ.
1.6
VGE = 15 V, IC = 4 A,
TJ = 125 °C
1.9
VGE = 15 V, IC = 4 A,
TJ = 175 °C
2.1
IF = 4 A
1.9
IF = 4 A, TJ = 125 °C
1.7
IF = 4 A, TJ = 175 °C
1.6
Gate threshold voltage
VCE = VGE, IC = 250 µA
ICES
Collector cut-off current
IGES
Gate-emitter leakage current
5
Unit
V
VGE = 15 V, IC = 4 A
VGE(th)
Max.
6
2.1
V
V
7
V
VGE = 0 V, VCE = 650 V
25
µA
VCE = 0 V, VGE = ± 20 V
±250
µA
Unit
Table 5: Dynamic characteristics
Symbol
Cies
4/16
Parameter
Test conditions
Input capacitance
VCE= 25 V, f = 1 MHz,
VGE = 0 V
Coes
Output capacitance
Cres
Reverse transfer capacitance
Qg
Total gate charge
Qge
Gate-emitter charge
Qgc
Gate-collector charge
VCC = 520 V, IC = 4 A,
VGE = 15 V
(see Figure 30: " Gate
charge test circuit")
DocID028678 Rev 4
Min.
Typ.
Max.
-
369
-
-
24.8
-
-
8
-
-
15.2
-
-
3
-
-
7
-
pF
nC
STGF4M65DF2
Electrical characteristics
Table 6: IGBT switching characteristics (inductive load)
Symbol
td(on)
tr
(di/dt)on
td(off)
tf
Parameter
Test conditions
Typ.
Max.
Unit
Turn-on delay time
12
-
ns
Current rise time
6.9
-
ns
480
-
A/µs
Turn-on current slope
Turn-off-delay time
Current fall time
Min.
VCE = 400 V, IC = 4 A,
VGE = 15 V, RG = 47 Ω
(see Figure 29: " Test
circuit for inductive load
switching")
86
-
ns
120
-
ns
0.040
-
mJ
Eon(1)
Turn-on switching energy
(2)
Turn-off switching energy
0.136
-
mJ
Total switching energy
0.176
-
mJ
Turn-on delay time
11.6
-
ns
8
-
ns
410
-
A/µs
Eoff
Ets
td(on)
tr
Current rise time
(di/dt)on
td(off)
tf
Turn-on current slope
Turn-off-delay time
Current fall time
VCE = 400 V, IC = 4 A,
VGE = 15 V, RG = 47 Ω,
TJ = 175 °C
(see Figure 29: " Test circuit
for inductive load switching")
85
-
ns
211
-
ns
0.067
-
mJ
Eon(1)
Turn-on switching energy
(2)
Turn-off switching energy
0.210
-
mJ
Total switching energy
0.277
-
mJ
Eoff
Ets
tsc
Short-circuit withstand time
VCC ≤ 400 V, VGE = 15 V,
TJstart = 150 °C
6
-
µs
VCC ≤ 400 V, VGE = 13 V,
TJstart = 150 °C
10
-
µs
Notes:
(1)Including
the reverse recovery of the diode.
(2)Including
the tail of the collector current.
Table 7: Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
trr
Reverse recovery time
Qrr
Reverse recovery charge
Irrm
Reverse recovery current
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
Err
Reverse recovery energy
trr
Reverse recovery time
Qrr
Reverse recovery charge
Irrm
Reverse recovery current
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
Err
Reverse recovery energy
IF = 4 A, VR = 400 V,
VGE = 15 V, di/dt = 800 A/µs
(see Figure 29: " Test circuit
for inductive load switching")
IF = 4 A, VR = 400 V,
VGE = 15 V, TJ = 175 °C,
di/dt = 800 A/µs
(see Figure 29: " Test circuit
for inductive load switching")
DocID028678 Rev 4
Min.
Typ.
Max.
Unit
-
133
-
ns
-
140
-
nC
-
5
-
A
-
520
-
A/µs
-
15
-
µJ
-
236
-
ns
-
370
-
nC
-
6.6
-
A
-
378
-
A/µs
-
32
-
µJ
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Electrical characteristics
2.1
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STGF4M65DF2
Electrical characteristics (curves)
Figure 2: Power dissipation vs. case
temperature
Figure 3: Collector current vs. case
temperature
Figure 4: Output characteristics (TJ = 25 °C)
Figure 5: Output characteristics (TJ = 175 °C)
Figure 6: VCE(sat) vs. junction temperature
Figure 7: VCE(sat) vs. collector current
DocID028678 Rev 4
STGF4M65DF2
Electrical characteristics
Figure 8: Collector current vs. switching
frequency
Figure 9: Forward bias safe operating area
Figure 10: Transfer characteristics
Figure 11: Diode VF vs. forward current
Figure 12: Normalized VGE(th) vs. junction
temperature
Figure 13: Normalized V(BR)CES vs. junction
temperature
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Electrical characteristics
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STGF4M65DF2
Figure 14: Capacitance variations
Figure 15: Gate charge vs. gate-emitter
voltage
Figure 16: Switching energy vs. collector
current
Figure 17: Switching energy vs. gate
resistance
Figure 18: Switching energy vs. temperature
Figure 19: Switching energy vs. collector
emitter voltage
DocID028678 Rev 4
STGF4M65DF2
Electrical characteristics
Figure 20: Short-circuit time and current vs.
VGE
Figure 21: Switching times vs. collector
current
Figure 22: Switching times vs. gate
resistance
Figure 23: Reverse recovery current vs. diode
current slope
Figure 24: Reverse recovery time vs. diode
current slope
Figure 25: Reverse recovery charge vs. diode
current slope
Qrr
IGBT170320161123RRQ
(nC)
VCC= 400 V, VGE= 15 V, IF= 4 A,
Tj= 175 °C
370
365
360
355
350
0
DocID028678 Rev 4
150
300
450
600
750
di/dt (A/µs)
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Electrical characteristics
STGF4M65DF2
Figure 26: Reverse recovery energy vs. diode current slope
Figure 27: Thermal impedance for IGBT
Figure 28: Thermal impedance for diode
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STGF4M65DF2
3
Test circuits
Test circuits
Figure 29: Test circuit for inductive load
switching
C
A
Figure 30: Gate charge test circuit
A
L=100 µH
G
E
B
B
3.3
µF
C
G
+
RG
VCC
1000
µF
D.U.T
E
-
AM01504v 1
Figure 31: Switching waveform
Figure 32: Diode reverse recovery waveform
di/dt
Qrr
trr
IF
ts
tf
t
IRRM
10%
IRRM
VRRM
dv/dt
AM01507v1
DocID028678 Rev 4
11/16
Package information
4
STGF4M65DF2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
12/16
DocID028678 Rev 4
STGF4M65DF2
4.1
Package information
TO-220FP package information
Figure 33: TO-220FP package outline
DocID028678 Rev 4
13/16
Package information
STGF4M65DF2
Table 8: TO-220FP package mechanical data
mm
Dim.
Min.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
14/16
Typ.
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
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STGF4M65DF2
5
Revision history
Revision history
Table 9: Document revision history
Date
25-Nov-2015
Revision
Changes
1
First release.
18-Apr-2016
2
Modified: features in cover page.
Modified: Table 2: "Absolute maximum ratings", Table 3: "Thermal
data", Table 4: "Static characteristics", Table 5: "Dynamic
characteristics", Table 6: "IGBT switching characteristics (inductive
load)" and Table 7: "Diode switching characteristics (inductive load)"
Added: Section 2.1: "Electrical characteristics (curves)".
Minor text changes
13-Jul-2016
3
Document status promoted from preliminary to production data.
4
Updated Figure 1: "Internal schematic diagram"
Updated Table 2: "Absolute maximum ratings"
Updated Figure 25: "Reverse recovery charge vs. diode current slope"
Minor text changes
21-Nov-2016
DocID028678 Rev 4
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STGF4M65DF2
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