STGF6M65DF2
Trench gate field-stop IGBT, M series 650 V, 6 A low loss
Datasheet - production data
Features
6 µs of short-circuit withstand time
VCE(sat) = 1.55 V (typ.) @ IC = 6 A
Tight parameter distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
Applications
TO-220FP
Figure 1: Internal schematic diagram
Description
C (2)
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series
IGBTs, which represent an optimal balance
between inverter system performance and
efficiency where low-loss and short-circuit
functionality are essential. Furthermore, the
positive VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
G (1)
Sc12850_no_tab
Motor control
UPS
PFC
E (3)
Table 1: Device summary
Order code
Marking
Package
Packing
STGF6M65DF2
G6M65DF2
TO-220FP
Tube
August 2016
DocID028668 Rev 3
This is information on a product in full production.
1/17
www.st.com
Contents
STGF6M65DF2
Contents
1
Electrical ratings ............................................................................. 3
2
Electrical characteristics ................................................................ 4
2.1
STGF6M65DF2 electrical characteristics curves .............................. 7
3
Test circuits ................................................................................... 12
4
Package information ..................................................................... 13
4.1
5
2/17
TO-220FP package information ...................................................... 14
Revision history ............................................................................ 16
DocID028668 Rev 3
STGF6M65DF2
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
VCES
IC(1)
Value
Unit
Collector-emitter voltage (VGE = 0 V)
650
V
Continuous collector current at TC = 25 °C
12
A
Continuous collector current at TC = 100 °C
6
A
ICP(2)
Pulsed collector current
24
A
VGE
Gate-emitter voltage
±20
V
Continuous forward current at TC = 25 °C
12
A
IF(1)
Continuous forward current at TC = 100 °C
6
A
IFP(2)
Pulsed forward current
24
A
VISO
Insulation withstand voltage (RMS) from all three leads to external
heat sink (t = 1 s, TC = 25 °C)
2.5
kV
PTOT
Total dissipation at TC = 25 °C
24.2
W
TSTG
Storage temperature range
- 55 to 150
°C
Operating junction temperature range
- 55 to 175
°C
TJ
Notes:
(1)Limited
(2)Pulse
by maximum junction temperature.
width limited by maximum junction temperature.
Table 3: Thermal data
Symbol
Parameter
Value
Unit
RthJC
Thermal resistance junction-case IGBT
6.2
°C/W
RthJC
Thermal resistance junction-case diode
7
°C/W
RthJA
Thermal resistance junction-ambient
62.5
°C/W
DocID028668 Rev 3
3/17
Electrical characteristics
2
STGF6M65DF2
Electrical characteristics
TC = 25 °C unless otherwise specified
Table 4: Static characteristics
Symbol
V(BR)CES
VCE(sat)
VF
Parameter
Collector-emitter breakdown
voltage
Collector-emitter saturation
voltage
Forward on-voltage
Test conditions
Min.
VGE = 0 V, IC = 250 µA
650
Typ.
1.55
VGE = 15 V, IC = 6 A,
TJ = 125 °C
1.9
VGE = 15 V, IC = 6 A,
TJ = 175 °C
2.1
IF = 6 A
2.2
IF = 6 A, TJ = 125 °C
2.0
IF = 6 A, TJ = 175 °C
1.9
Gate threshold voltage
VCE = VGE, IC = 250 µA
ICES
Collector cut-off current
IGES
Gate-emitter leakage current
5
Unit
V
VGE = 15 V, IC = 6 A
VGE(th)
Max.
6
2.0
V
V
7
V
VGE = 0 V, VCE = 650 V
25
µA
VCE = 0 V, VGE = ± 20 V
±250
µA
Unit
Table 5: Dynamic characteristics
Symbol
Cies
4/17
Parameter
Test conditions
Input capacitance
VCE = 25 V, f = 1 MHz,
VGE = 0 V
Coes
Output capacitance
Cres
Reverse transfer capacitance
Qg
Total gate charge
Qge
Gate-emitter charge
Qgc
Gate-collector charge
VCC = 520 V, IC = 6 A,
VGE = 15 V (see Figure 30:
" Gate charge test circuit")
DocID028668 Rev 3
Min.
Typ.
Max.
-
530
-
-
31
-
-
11
-
-
21.2
-
-
5.2
-
-
8.8
-
pF
nC
STGF6M65DF2
Electrical characteristics
Table 6: IGBT switching characteristics (inductive load)
Symbol
Min.
Typ.
Max.
Unit
Turn-on delay
time
-
15
-
ns
tr
Current rise
time
-
5.8
-
ns
(di/dt)on
Turn-on
current slope
-
828
-
A/µs
td(off)
Turn-off-delay
time
-
90
-
ns
-
130
-
ns
td(on)
tf
Parameter
Current fall
time
Test conditions
VCE = 400 V, IC = 6 A, VGE = 15 V,
RG = 22 Ω (see Figure 29: " Test circuit
for inductive load switching")
Eon(1)
Turn-on
switching
energy
-
0.036
-
mJ
Eoff(2)
Turn-off
switching
energy
-
0.200
-
mJ
Ets
Total switching
energy
-
0.236
-
mJ
td(on)
Turn-on delay
time
-
17
-
ns
tr
Current rise
time
-
7
-
ns
(di/dt)on
Turn-on
current slope
-
685
-
A/µs
td(off)
Turn-off-delay
time
-
86
-
ns
-
205
-
ns
tf
Current fall
time
VCE = 400 V, IC = 6 A, VGE = 15 V,
RG = 25 Ω TJ = 175 °C (see Figure 29: "
Test circuit for inductive load switching" )
Eon(1)
Turn-on
switching
energy
-
0.064
-
mJ
Eoff(2)
Turn-off
switching
energy
-
0.290
-
mJ
Ets
Total switching
energy
-
0.354
-
mJ
tsc
Short-circuit
withstand time
VCC ≤ 400 V, VGE = 15 V, TJstart = 150 °C
6
-
VCC ≤ 400 V, VGE = 13 V, TJstart = 150 °C
10
-
µs
Notes:
(1)Turn-on
switching energy includes reverse recovery of the diode.
(2)Turn-off
switching energy also includes the tail of the collector current.
DocID028668 Rev 3
5/17
Electrical characteristics
STGF6M65DF2
Table 7: Diode switching characteristics (inductive load)
Symbol
6/17
Parameter
Test conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery
time
-
140
ns
Qrr
Reverse recovery
charge
-
210
nC
Irrm
Reverse recovery
current
-
6.6
A
dIrr/dt
Peak rate of fall of
reverse recovery
current during tb
-
430
A/µs
Err
Reverse recovery
energy
-
16
µJ
trr
Reverse recovery
time
-
200
ns
Qrr
Reverse recovery
charge
-
473
nC
Irrm
Reverse recovery
current
-
9.6
A
dIrr/dt
Peak rate of fall of
reverse recovery
current during tb
-
428
A/µs
Err
Reverse recovery
energy
-
32
µJ
IF = 6 A, VR = 400 V, VGE = 15 V
(see Figure 29: " Test circuit for
inductive load switching")
di/dt = 1000 A/µs
IF = 6 A, VR = 400 V, VGE = 15 V
TJ = 175 °C (see Figure 29: " Test
circuit for inductive load switching")
di/dt = 1000 A/µs
DocID028668 Rev 3
STGF6M65DF2
2.1
Electrical characteristics
STGF6M65DF2 electrical characteristics curves
Figure 2: Power dissipation vs. case
temperature
Figure 3: Collector current vs. case
temperature
Figure 4: Output characteristics (TJ = 25 °C)
Figure 5: Output characteristics (TJ = 175 °C)
Figure 6: VCE(sat) vs. junction temperature
Figure 7: VCE(sat) vs. collector current
DocID028668 Rev 3
7/17
Electrical characteristics
8/17
STGF6M65DF2
Figure 8: Collector current vs. switching
frequency
Figure 9: Forward bias safe operating area
Figure 10: Transfer characteristics
Figure 11: Diode VF vs. forward current
Figure 12: Normalized VGE(th) vs. junction
temperature
Figure 13: Normalized V(BR)CES vs. junction
temperature
DocID028668 Rev 3
STGF6M65DF2
Electrical characteristics
Figure 14: Capacitance variations
Figure 15: Gate charge vs. gate-emitter
voltage
Figure 16: Switching energy vs. collector
current
Figure 17: Switching energy vs. gate
resistance
Figure 18: Switching energy vs. temperature
Figure 19: Switching energy vs. collector
emitter voltage
DocID028668 Rev 3
9/17
Electrical characteristics
10/17
STGF6M65DF2
Figure 20: Short-circuit time and current vs.
VGE
Figure 21: Switching times vs. collector
current
Figure 22: Switching times vs. gate
resistance
Figure 23: Reverse recovery current vs. diode
current slope
Figure 24: Reverse recovery time vs. diode
current slope
Figure 25: Reverse recovery charge vs. diode
current slope
DocID028668 Rev 3
STGF6M65DF2
Electrical characteristics
Figure 26: Reverse recovery energy vs. diode current slope
Figure 27: Thermal impedance for IGBT
Figure 28: Thermal impedance for diode
DocID028668 Rev 3
11/17
Test circuits
3
STGF6M65DF2
Test circuits
Figure 29: Test circuit for inductive load
switching
Figure 30: Gate charge test circuit
VCC
C
A
A
12 V
L=100 µH
G
B
B
3.3
µF
C
G
+
1 kΩ
100 nF
E
RG
47 kΩ
VCC
1000
µF
Vi ≤ VGMAX
D.U.T
E
2200
µF
IG=CONST
2.7 kΩ
100 Ω
D.U.T.
VG
47 kΩ
PW
1 kΩ
AM01504v 1
AM01505v1
Figure 31: Switching waveform
12/17
DocID028668 Rev 3
Figure 32: Diode reverse recovery waveform
STGF6M65DF2
4
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
DocID028668 Rev 3
13/17
Package information
4.1
STGF6M65DF2
TO-220FP package information
Figure 33: TO-220FP package outline
14/17
DocID028668 Rev 3
STGF6M65DF2
Package information
Table 8: TO-220FP package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
DocID028668 Rev 3
15/17
Revision history
5
STGF6M65DF2
Revision history
Table 9: Document revision history
16/17
Date
Revision
Changes
24-Nov-2015
1
First release.
24-Feb-2016
2
Document status promoted from preliminary to production data.
05-Aug-2016
3
Added Section 2.1: "STGF6M65DF2 electrical characteristics curves".
Updated Section 1: "Electrical ratings" and Section 2: "Electrical
characteristics".
DocID028668 Rev 3
STGF6M65DF2
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DocID028668 Rev 3
17/17
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