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STGFL6NC60D

STGFL6NC60D

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    SOT78

  • 描述:

    IGBT 600V 7A 22W TO220FP

  • 数据手册
  • 价格&库存
STGFL6NC60D 数据手册
STGBL6NC60D STGPL6NC60D 600 V - 6 A hyper fast IGBT Datasheet − production data Features ■ ■ Low CRES / CIES ratio (no cross-conduction susceptibility) TAB TAB Very soft ultra fast recovery antiparallel diode Applications 3 3 1 ■ Very high frequency operation ■ High frequency lamp ballast ■ SMPS and PFC (including hard switching) D²PAK 1 2 TO-220 Description This series of hyper fast IGBT is based on PowerMESH technology and exhibits very low turn-off energy, thanks to a new lifetime control system. This results in an optimized trade-off between on-state voltage and switching losses, allowing very high operating frequencies. Figure 1. Internal schematic diagram C (2, TAB) G (1) SC12850 Table 1. E (3) Device summary Order codes Marking Package Packaging STGBL6NC60DT4 GBL6NC60D D²PAK Tape and reel STGPL6NC60D GPL6NC60D TO-220 Tube September 2012 This is information on a product in full production. Doc ID 13765 Rev 4 1/17 www.st.com 17 Contents STGBL6NC60D, STGPL6NC60D Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 ................................................ 9 Doc ID 13765 Rev 4 STGBL6NC60D, STGPL6NC60D 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGE = 0) 600 V IC(1) Collector current (continuous) at TC = 25 °C 14 A IC(1) Collector current (continuous) at TC = 100 °C 6 A ICL(2) Turn-off latching current 18 A ICP(3) Pulsed collector current 18 A VGE Gate-emitter voltage ±20 V Diode RMS forward current at TC = 25 °C 7 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 20 A PTOT Total dissipation at TC = 25 °C 56 W VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) -- V – 55 to 150 °C IF Tj Operating junction temperature 1. Calculated according to the iterative formula: T j ( max ) – T C I C ( TC ) = ------------------------------------------------------------------------------------------------------R thj – c × VCE ( sat ) ( max ) ( T j ( max ), IC ( T C ) ) 2. Vclamp = 80%,(VCES), Tj =150°C, RG = 10 Ω, VGE = 15 V 3. Pulse width limited by max junction temperature allowed Table 3. Symbol Rthj-case Rthj-amb Thermal resistance Parameter Value Unit Thermal resistance junction-case IGBT max. 2.2 °C/W Thermal resistance junction-case diode max. 4 °C/W 62.5 °C/W Thermal resistance junction-ambient max. Doc ID 13765 Rev 4 3/17 Electrical characteristics 2 STGBL6NC60D, STGPL6NC60D Electrical characteristics TCASE = 25 °C unless otherwise specified. Table 4. Symbol Static electrical characteristics Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) VCE(sat) VGE = 15 V, IC= 1.5 A Collector-emitter saturation VGE = 15 V, IC= 3 A voltage VGE= 15 V, IC= 3 A,TC=125°C VGE(th) Gate threshold voltage VCE= VGE, IC= 250 µA ICES Collector cut-off current (VGE = 0) VCE = 600 V VCE = 600 V, TC = 125 °C IGES Gate-emitter leakage current (VCE = 0) VGE = ±20 V Forward transconductance VCE = 15 V, IC = 3 A gfs Table 5. Symbol 4/17 IC = 1 mA Min. Typ. Max. 600 Unit V 1.9 2.2 2 3.75 2.9 V V V 5.75 V 50 5 µA mA ±100 nA 3 S Dynamic electrical characteristics Parameter Test conditions Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance VCE = 25 V, f = 1 MHz, VGE = 0 208 32.5 5.4 pF pF pF Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge VCE = 390 V, IC = 3 A, VGE = 15 V (see Figure 17) 12 2.6 4.9 nC nC nC Doc ID 13765 Rev 4 Min. Typ. Max. Unit STGBL6NC60D, STGPL6NC60D Table 6. Symbol Switching on/off (inductive load) Parameter Test conditions Min. Typ. Max. Unit td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCC = 390 V, IC = 3 A RG= 10 Ω, VGE = 15 V (see Figure 18) 6.7 3.7 930 ns ns A/µs td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCC = 390 V, IC = 3 A RG = 10 Ω, VGE = 15 V, TC =125 °C (see Figure 18) 6.5 4 820 ns ns A/µs tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCC = 390 V, IC = 3 A, RGE = 10 Ω, VGE = 15 V (see Figure 18) 17 46 47 ns ns ns tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCC = 390 V, IC = 3 A, RGE = 10 Ω, VGE =15 V, TC = 125 °C (see Figure 18) 35 67 55 ns ns ns Table 7. Symbol 1. Electrical characteristics Switching energy (inductive load) Parameter Test conditions Min. Typ. Max. Unit Eon (1) Eoff(2) Ets Turn-on switching losses Turn-off switching losses Total switching losses VCC = 390 V, IC = 3 A RG = 10 Ω, VGE=15 V (see Figure 18) 46.5 23.5 70 µJ µJ µJ Eon (1) Eoff(2) Ets Turn-on switching losses Turn-off switching losses Total switching losses VCC = 390 V, IC = 3 A RG = 10 Ω, VGE = 15 V, TC = 125 °C (see Figure 18) 67.5 46 113.5 µJ µJ µJ Eon is the turn-on losses when a typical diode is used in the test circuit in (see Figure 19). If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) 2. Turn-off losses include also the tail of the collector current Table 8. Symbol tf Eoff(1) tf Eoff (1) Turn-off with snubber Parameter Test conditions Min. Typ. Max. Unit Current fall time Turn-off switching losses VCC = 200 V, IC = 1.5 A RG = 22 Ω, Vclamp=400 V, L=1 mH, C-snubber = 2.7 nF (see Figure 18) 16 1.6 ns µJ Current fall time Turn-off switching losses VCC = 200 V, IC = 1.5 A RG = 22 Ω, Vclamp= 400 V, L=1 mH, C-snubber= 2.7 nF, TC= 100 °C (see Figure 18) 19 3.5 ns µJ 1. Turn-off losses include also the tail of the collector current Doc ID 13765 Rev 4 5/17 Electrical characteristics Table 9. Symbol STGBL6NC60D, STGPL6NC60D Collector-emitter diode Parameter Test conditions Min. Typ. Max. Unit 1.3 VF Forward on-voltage IF = 1 A IF=3 A IF=3 A,Tc=125 °C 1.35 1.15 V V V trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF = 3 A, VR = 40 V, di/dt = 100 A/μs (see Figure 19) 50 55 2.2 ns nC A trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF = 3 A,VR = 40 V, TC =125 °C, di/dt = 100 A/μs (see Figure 19) 80 105 2.7 ns nC A 2.1 Electrical characteristics (curves) Figure 2. Output characteristics Figure 3. Transfer characteristics Figure 4. Transconductance Figure 5. Collector-emitter on voltage vs. temperature 6/17 Doc ID 13765 Rev 4 STGBL6NC60D, STGPL6NC60D Electrical characteristics Figure 6. Gate charge vs. gate-source voltage Figure 7. Capacitance variations Figure 8. Normalized gate threshold voltage vs. temperature Figure 9. Collector-emitter on voltage vs. collector current Figure 10. Normalized breakdown voltage vs. temperature Figure 11. Switching losses vs. temperature Doc ID 13765 Rev 4 7/17 Electrical characteristics STGBL6NC60D, STGPL6NC60D Figure 12. Switching losses vs. gate resistance Figure 13. Switching losses vs. collector current Figure 14. Turn-off SOA Figure 15. Forward voltage drop vs. forward current AM00690v1 100.0 Tj=150°C (Maximum values) 10.0 Tj=25°C (Maximum values) 1.0 VFM(V) 0.1 8/17 Doc ID 13765 Rev 4 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 STGBL6NC60D, STGPL6NC60D 3 Test circuit Test circuit Figure 16. Test circuit for inductive load switching Figure 17. Gate charge test circuit Figure 18. Switching waveform Figure 19. Diode recovery time waveform Doc ID 13765 Rev 4 9/17 Package mechanical data 4 STGBL6NC60D, STGPL6NC60D Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 10. TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 10/17 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 13765 Rev 4 STGBL6NC60D, STGPL6NC60D Package mechanical data Figure 20. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID 13765 Rev 4 11/17 Package mechanical data Table 11. STGBL6NC60D, STGPL6NC60D D²PAK (TO-263) mechanical data mm Dim. Min. Typ. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 12/17 Max. 0.4 0° 8° Doc ID 13765 Rev 4 STGBL6NC60D, STGPL6NC60D Package mechanical data Figure 21. D²PAK (TO-263) drawing 0079457_T Figure 22. D²PAK footprint (a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint a. All dimension are in millimeters Doc ID 13765 Rev 4 13/17 Packaging mechanical data 5 STGBL6NC60D, STGPL6NC60D Packaging mechanical data Table 12. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. 14/17 Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 Doc ID 13765 Rev 4 Min. Max. 330 13.2 26.4 30.4 STGBL6NC60D, STGPL6NC60D Packaging mechanical data Figure 23. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F W K0 B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 24. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 Doc ID 13765 Rev 4 15/17 Revision history 6 STGBL6NC60D, STGPL6NC60D Revision history Table 13. 16/17 Document revision history Date Revision Changes 27-Jul-2007 1 First release 09-Jul-2008 2 4: Package mechanical data has been updated. 21-Nov-2008 3 Updated Table 9 and Figure 15 20-Sep-2012 4 Minor text changes in the Description. Updated: Section 4: Package mechanical data on page 10 and Section 5: Packaging mechanical data on page 14. Doc ID 13765 Rev 4 STGBL6NC60D, STGPL6NC60D Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2012 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 13765 Rev 4 17/17
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