STGIPN3H60AT

STGIPN3H60AT Datasheet SLLIMM-nano IPM, 3 A, 600 V, 3-phase inverter bridge IGBT Features • • • • • • • • • NDIP-26L IPM 3 A, 600 V, 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes Optimized for low electromagnetic interferences VCE(sat) negative temperature coefficient 3.3 V, 5 V, 15 V CMOS/TTL input comparators with hysteresis and pull-down/ pull-up resistors Undervoltage lockout Internal bootstrap diode Interlocking function Optimized pinout for easy board layout 85 kΩ NTC for temperature control (UL1434 CA 2 and 4) Applications • • • • • 3-phase induction motor ACIM) Dishwasher Fans PMSM / BLDC motor control Refrigerators and freezers Description Product status link STGIPN3H60AT This intelligent power module implements a compact, high performance AC motor drive in a simple, rugged design. It is composed of six IGBTs with freewheeling diodes and three half-bridge HVICs for gate driving, providing low electromagnetic interference (EMI) characteristics with optimized switching speed. The package is optimized for thermal performance and compactness in built-in motor applications, or other low power applications where assembly space is limited. This IPM includes an operational amplifier, completely uncommitted, and a comparator that can be used to design a fast and efficient protection circuit. Product summary Order code STGIPN3H60AT Marking GIPN3H60AT Package NDIP-26L Packing Tube DS10613 - Rev 3 - August 2022 For further information contact your local STMicroelectronics sales office. www.st.com STGIPN3H60AT Internal schematic diagram and pin configuration 1 Internal schematic diagram and pin configuration Figure 1. Internal schematic diagram N W (26) GND (1) T (2) W, OUT W (25) GND Vcc W (3) HVG OUT Vboot W (24) VCC HIN W (4) LIN W (5) HIN LVG LIN Vboot NTC T (6) N V (23) NC (7) GND HVG NC (8) V, OUT V (22) OUT VCC Vcc V (9) HIN V (10) HIN LVG LIN Vboot Vboot V (21) LIN V (11) NC (12) N U (20) GND HVG Vcc U (13) VCC HIN U (14) OUT HIN LVG LIN Vboot U, OUT U (19) P (18) T (15) LIN U (16) DS10613 - Rev 3 Vboot U (17) page 2/18 STGIPN3H60AT Internal schematic diagram and pin configuration Table 1. Pin description DS10613 - Rev 3 Pin Symbol Description 1 GND 2 T 3 VCC W Low voltage power supply W phase 4 HIN W High side logic input for W phase 5 LIN W Low side logic input for W phase 6 T 7 NC Not connected 8 NC Not connected 9 VCC V Low voltage power supply V phase 10 HIN V High side logic input for V phase 11 LIN V Low side logic input for V phase 12 NC 13 VCC U Low voltage power supply for U phase 14 HIN U High side logic input for U phase 15 T 16 LIN U 17 VBOOT U 18 P Positive DC input 19 U U phase output 20 NU Negative DC input for U phase 21 VBOOT V Bootstrap voltage for V phase 22 V V phase output 23 NV Negative DC input for V phase 24 VBOOT W Bootstrap voltage for W phase 25 W W phase output 26 NW Negative DC input for W phase Ground NTC thermistor terminal NTC thermistor terminal Not connected NTC thermistor terminal Low side logic input for U phase Bootstrap voltage for U phase page 3/18 STGIPN3H60AT Internal schematic diagram and pin configuration Figure 2. Pin layout (top view) PIN26 (*) (*) PIN17 PIN #1 ID PIN1 (*) Dummy pin internally connected to P (positive DC input). DS10613 - Rev 3 PIN16 AM09368V1 page 4/18 STGIPN3H60AT Electrical ratings 2 Electrical ratings 2.1 Absolute maximum ratings Table 2. Inverter part Symbol VCES ± IC ± ICP (2) PTOT Parameter Value Unit 600 V Continuous collector current each IGBT(TC = 25 °C) 3 A Pulsed collector current each IGBT (less than 1 ms) 18 A Total power dissipation each IGBT (TC = 25 °C) 8 W Min. Max. Unit Vboot - 18 Vboot + 0.3 V Each IGBT collector emitter voltage (VIN(1)= 0) 1. Applied between HINi, LIN i and GND for i = U, V, W. 2. Pulse width limited by max. junction temperature. Table 3. Control part Symbol Parameter Output voltage applied between OUTU, OUTV, VOUT OUTW - GND VCC Low voltage power supply - 0.3 18 V Vboot Bootstrap voltage - 0.3 618 V Logic input voltage applied among HIN, LIN and GND - 0.3 15 V 50 V/ns VIN ΔVOUT/dT Allowed output slew rate Table 4. Total system Symbol VISO 2.2 Parameter Isolation withstand voltage applied between each pin and heat sink plate (AC voltage, t = 60 s) Value Unit 1000 Vrms TJ Power chip operating junction temperature range -40 to 150 °C TC Module operation case temperature range -40 to 125 °C Thermal data Table 5. Thermal data Symbol RthJC RthJA DS10613 - Rev 3 Parameter Value Thermal resistance, junction-to-case single IGBT 12.8 Thermal resistance, junction-to-case single diode 15.5 Thermal resistance, junction-to-ambient per module 22 Unit °C/W °C/W page 5/18 STGIPN3H60AT Electrical characteristics 3 Electrical characteristics 3.1 Inverter part TJ = 25 °C unless otherwise specified. Table 6. Static Symbol Parameter Test conditions Min. Typ. Max. - 2.15 2.6 VCC = Vboot = 15 V, VIN (1)= 0 to 5 V, IC = 1 A VCE(sat) Collector-emitter saturation voltage Unit V VCC = Vboot = 15 V, VIN (1)= 0 to 5 V, IC = 1 A, - 1.65 TJ = 125 °C ICES VF Collector cut-off current VCE = 550 V, VCC = 15 V , (VIN (1)= 0 “logic state”) VBS = 15 V Diode forward voltage VIN (1)= 0 “logic state”, IC = 1 A - 250 µA - 1.7 V Unit 1. Applied between HINi, LIN i and GND for i = U, V, W (LIN inputs are active low). Table 7. Inductive load switching time and energy Symbol ton (1) tc(on) (1) toff (1) tc(off) (1) trr Parameter Test conditions Turn-on time Min. Typ. Max. - 275 - Crossover time (on) VDD = 300 V, - 90 - Turn-off time VCC = Vboot = 15 V, - 890 - - 125 - - 50 - - 18 - - 13 - Crossover time (off) Reverse recovery time Eon Turn-on switching energy Eoff Turn-off switching energy VIN (2)= 0 to 5 V, IC = 1 A (see Figure 4. Switching time definition) ns µJ 1. tON and tOFF include the propagation delay time of the internal drive. tC(ON) and tC(OFF) are the switching time of IGBT itself under the internally given gate driving conditions. 2. Applied between HINi, LIN i and GND for i = U, V, W ( LIN inputs are active low). DS10613 - Rev 3 page 6/18 STGIPN3H60AT Inverter part Figure 3. Switching time test circuit INPUT BOOT Lin BUS VBOOT>VCC HVG Hin L OUT VCC Vcc IC LVG VCE GND 0 1 Figure 4. Switching time definition 100% IC 100% IC t rr IC VCE VIN VIN t ON VIN(ON) VCE IC t C(ON) 10% IC 90% IC 10% VCE (a) turn-on t OFF VIN(OFF) t C(OFF) 10% VCE 10% IC (b) turn-off AM09223V1 Figure 4. Switching time definition refers to HIN inputs (active high). For LIN inputs (active low), VIN polarity must be inverted for turn-on and turn-off. DS10613 - Rev 3 page 7/18 STGIPN3H60AT Control part 3.2 Control part (VCC = 15 V unless otherwise specified). Table 8. Low voltage power supply Symbol VCC_hys Parameter Test conditions Min. Typ. Max. Unit VCC UV hysteresis 0.9 VCC_thON VCC UV turn-ON threshold 9.1 9.6 10.1 V VCC_thOFF VCC UV turn-OFF threshold 7.9 8.3 8.8 V 250 330 µA 350 450 mA Min. Typ. Max. Unit Iqccu Undervoltage quiescent supply current Iqcc Quiescent current VCC = 15 V, SD /OD = 5 V, LIN = 5 V, HIN = 0 V, CIN = 0 V Vcc = 15 V, SD /OD = 5 V, LIN = 5 V, HIN = 0 V, CIN = 0 V V Table 9. Bootstrapped voltage Symbol Parameter Test conditions Vboot_thON Undervoltage turn-on threshold 8.5 9.5 10.5 V Vboot_thOFF Undervoltage turn-off threshold 7.2 8.3 9.2 V Undervoltage hystereses 0.9 Vboothys Iqboot RDS(on) V Quiescent current 250 VCC > 12.5 V Bootstrap driver on-resistance 125 µA Ω Table 10. Logic inputs Symbol Parameter Vil Low logic level voltage Vih High logic level voltage Test conditions Min. Typ. V -1 µA Iih HIN logic “0” input bias current (1) HIN = 15 V (1) 20 Dt Dead time see Figure 1 320 HIN = 0 V 1.1 V HIN logic “1” input bias current (1) Unit 1.8 Iil (1) Max. 70 µA ns 1. Applied between HINi, LINi and GND for i = U, V, W DS10613 - Rev 3 page 8/18 STGIPN3H60AT NTC thermistor Figure 5. Dead time and interlocking definition LIN DT Interlocking function H IN DT LVG DT HVG AM03794v1 3.3 NTC thermistor Table 11. NTC thermistor Symbol Parameter Test conditions R25 Resistance T = 25 °C 85 kΩ R100 Resistance T = 100 °C 5388 Ω B B-constant T = 25 °C to 100 °C 4092 K T Operating temperature Where T are temperatures in Kelvins DS10613 - Rev 3 Min. -25 B 1− 1 R T = R25 × e T 298 Typ. Max. 125 Unit °C (1) page 9/18 STGIPN3H60AT NTC thermistor Figure 6. NTC resistance vs. temperature NTC [kΩ] 3.500 GIPD17220131349FSR 3.000 2.500 2.000 1.500 1.000 Max Min 500 0 -40 Typ -20 0 20 40 60 80 100 120 140 [°C] Figure 7. NTC resistance vs. temperature (zoom) NTC [kΩ] 40 GIPD17220131350FSR 35 30 25 20 15 10 Max Min Typ 5 0 50 DS10613 - Rev 3 70 90 110 130 150[°C] page 10/18 DS10613 - Rev 3 5V / 3.3V + VCC DZ Cvcc R1 HIN W - R1 LIN W COT ROT R1 HIN V Temp. monitoring MICROCONTROLLER VDD R1 R1 HIN U LIN V R1 SGN_GN D C2 C1 C1 C2 C1 C1 C2 C1 C1 GND (1) T (2) Vcc W (3) HIN W (4) LIN W (5) T (6) NC (7) NC (8) Vcc V (9) HIN V (10) LIN V (11) NC (12) Vcc U (13) HIN U (14) T (15) LIN U (16) NTC GND VCC HIN LIN GND VCC HIN LIN GND VCC HIN LIN LVG OUT HVG Vboot LVG OUT HVG Vboot LVG OUT HVG Vboot to MCU / Op-amp N W (26) W, OUT W (25) Vboot W (24) N V (23) V, OUT V (22) Vboot V (21) N U (20) U, OUT U (19) P (18) Vboot U (17) CSF Cboot W Cboot V Cboot U RSF C3 C3 C3 DZ1 DZ1 DZ1 PW R_GND Rshunt M C4 Cvdc + - VDC 4 LIN U Application circuit example STGIPN3H60AT Application circuit example Figure 8. Application circuit example Application designers are free to use a different scheme according to the specifications of the device. page 11/18 STGIPN3H60AT Guidelines 4.1 Guidelines • • • • • • • • • • Input signals HIN, LIN are active-high logic. A 500 kΩ (typ.) pull-down resistor is built-in for each input. To prevent input signal oscillation, the wiring of each input should be as short as possible and the use of RC filters (R1, C1) on each input signal is suggested. The filters should be done with a time constant of about 100ns and must be placed as close as possible to the IPM input pins. The bypass capacitor Cvcc (aluminum or tantalum) is recommended to reduce the transient circuit demand on the power supply. In addition, a decoupling capacitor C2 (from 100 to 220 nF, ceramic with low ESR) is suggested, to reduce high frequency switching noise distributed on the power supply lines. It must be placed as close as possible to each Vcc pin and in parallel to the bypass capacitor. The use of RC filter (RSF, CSF) for current monitoring is recommended to improve noise immunity. The filter must be placed as close as possible to the microcontroller or to the Op-amp. The decoupling capacitor C3 (from 100 to 220 nF, ceramic with low ESR), in parallel to each Cboot, is recommended in order to filter high frequency disturbances. The Zener diodes DZ1 between the Vcc pins and GND and in parallel to each Cboot is suggested in order to prevent overvoltage. The decoupling capacitor C4 (from 100 to 220 nF, ceramic with low ESR) in parallel to the electrolytic capacitor Cvdc is recommended, in order to prevent surge destruction. Both capacitors C4 and Cvdc should be placed as close as possible to the IPM (C4 has priority over Cvdc). By integrating an application-specific type HVIC inside the module, direct coupling to the MCU terminals without an opto-coupler is possible. Low inductance shunt resistors should be used for phase leg current sensing. In order to avoid malfunctions, the wiring between N pins, the shunt resistor and PWR_GND should be as short as possible. It is recommended to connect SGN_GND to PWR_GND at only one point (near the terminal of shunt resistor), in order to avoid any malfunction due to power ground fluctuation. These guidelines ensure the specifications of the device for application designs. For further details, please refer to the relevant application note AN4043. Table 12. Recommended operating conditions Symbol Test conditions Min. VPN Supply voltage Applied between P-Nu, Nv, Nw VCC Control supply voltage Applied between VCC-GND VBS High-side bias voltage Applied between VBOOTi-OUTi for i = U, V, W 11.5 tdead Blanking time to avoid arm-short For each input signal 1.5 fPWM PWM input signal TC DS10613 - Rev 3 Parameter Case operation temperature -40 °C < TC < 100 °C -40 °C < TJ < 125 °C 12 Typ. Max. Unit 300 500 V 15 17 V 17 V µs 25 kHz 100 °C page 12/18 STGIPN3H60AT Package information 5 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 5.1 NDIP-26L type C package information Figure 9. NDIP-26L type C package outline 8278949_7 DS10613 - Rev 3 page 13/18 STGIPN3H60AT NDIP-26L type C package information Table 13. NDIP-26L type C mechanical data Dim. mm Min. Typ. A 4.40 A1 0.80 1.00 1.20 A2 3.00 3.10 3.20 A3 1.70 1.80 1.90 A4 5.70 5.90 6.10 b 0.53 b1 0.52 b2 0.83 b3 0.82 c 0.46 c1 0.45 0.50 0.55 D 29.05 29.15 29.25 D1 0.50 0.77 1.00 D2 0.35 0.53 0.70 0.72 0.60 0.68 1.02 0.90 0.98 0.59 D3 DS10613 - Rev 3 Max. 29.55 E 12.35 12.45 12.55 e 1.70 1.80 1.90 e1 2.40 2.50 2.60 eB1 16.10 16.40 16.70 eB2 21.18 21.48 21.78 L 1.24 1.39 1.54 page 14/18 STGIPN3H60AT NDIP-26L packing information 5.2 NDIP-26L packing information Figure 10. NDIP-26L tube (dimensions are in mm) Notes: ±0.1 1- Material: extrused/transparent PVC 0.80 mm thickness 10E6~10E11/SQ PVC 2- General tolerance unless otherwise specified: ±0.25 mm 8313150_3 Table 14. Shipping details DS10613 - Rev 3 Parameter Value Base quantity 17 pieces Bulk quantity 476 pieces page 15/18 STGIPN3H60AT Revision history Table 15. Document revision history Date Revision Changes 30-Sep-2014 1 Initial release. 13-Sep-2016 2 Updated Section 5.1: "NDIP-26L type C package information" and Section 5.2: "NDIP-26L packing information" Minor text changes Modified Applications on cover page 24-Aug-2022 3 Modified Table 5. Thermal data Minor text changes. DS10613 - Rev 3 page 16/18 STGIPN3H60AT Contents Contents 1 Internal schematic diagram and pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 3 4 2.1 Absolute maximum ratings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3.1 Inverter part . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3.2 Control part . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3.3 NTC thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Application circuit example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.1 5 Guidelines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 5.1 NDIP-26L type C package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5.2 NDIP-26L packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 DS10613 - Rev 3 page 17/18 STGIPN3H60AT IMPORTANT NOTICE – READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2022 STMicroelectronics – All rights reserved DS10613 - Rev 3 page 18/18