STGIPQ5C60T-HL, STGIPQ5C60T-HZ
Datasheet
SLLIMM™ nano - 2nd series IPM, 3-phase inverter, 5 A, 600 V,
short‑circuit rugged IGBTs
Features
•
•
N2DIP-26L type L
N2DIP-26L type Z
•
•
•
•
•
•
•
•
•
•
•
•
IPM 5 A, 600 V, 3-phase IGBT inverter bridge including 3 control ICs for gate
driving and freewheeling diodes
3.3 V, 5 V, 15 V TTL/CMOS input comparators with hysteresis and pull-down/
pull-up resistors
Internal bootstrap diode
Optimized for low electromagnetic interference
Undervoltage lockout
Short-circuit rugged TFS IGBTs
Shutdown function
Interlocking function
Op-amp for advanced current sensing
Comparator for fault protection against overcurrent
NTC (UL 1434 CA 2 and 4)
Isolation ratings of 1500 Vrms/min.
Up to ±2 kV ESD protection (HBM C = 100 pF, R = 1.5 kΩ)
UL recognition: UL 1557, file E81734
Applications
•
•
3-phase inverters for motor drives
Dish washers, refrigerator compressors, heating systems, air-conditioning fans,
draining and recirculation pumps
Description
Product status link
STGIPQ5C60T-HL
STGIPQ5C60T-HZ
Product summary
STGIPQ5C60T-HL
Order code
STGIPQ5C60T-HL
Marking
GIPQ5C60T-HL
Package
N2DIP-26L type L
Packing
Tube
This second series of SLLIMM (small low-loss intelligent molded module)-nano
provides a compact, high-performance AC motor drive in a simple, rugged design. It
is composed of six improved short-circuit rugged trench gate fieldstop IGBTs with
freewheeling diodes and three half-bridge HVICs for gate driving, providing low
electromagnetic interference (EMI) characteristics with optimized switching speed.
The package is designed to allow a better and more easily screwed-on heatsink, and
is optimized for thermal performance and compactness in built-in motor applications
or other low power applications where assembly space is limited. This IPM includes a
completely uncommitted operational amplifier and a comparator that can be used to
design a fast and efficient protection circuit. SLLIMM™ is a trademark of
STMicroelectronics.
STGIPQ5C60T-HZ
Order code
STGIPQ5C60T-HZ
Marking
GIPQ5C60T-HZ
Package
N2DIP-26L type Z
Packing
Tube
DS10559 - Rev 9 - March 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
STGIPQ5C60T-HL, STGIPQ5C60T-HZ
Internal schematic diagram and pin configuration
1
Internal schematic diagram and pin configuration
Figure 1. Internal schematic diagram
N W (26)
GND (1)
T/ SD / OD (2)
NTC
Vcc W (3)
HIN W (4)
W, OUT W (25)
GND
HVG
VCC
HIN
OUT
Vboot W (24)
LVG
SD/OD
LIN W (5)
LIN
Vboot
OP+ (6)
N V (23)
OPOUT (7)
GND
OP+
OPOUT
OP- (8)
OP-
VCC
Vcc V (9)
HIN
HVG
V, OUT V (22)
OUT
LVG
SD/OD
HIN V (10)
LIN
Vboot
Vboot V (21)
LIN V (11)
CIN (12)
GND
N U (20)
CIN
HVG
Vcc U (13)
VCC
HIN U (14)
HIN
OUT
U, OUT U (19)
LVG
SD/OD
LIN
Vboot
P (18)
T / SD / OD (15)
LIN U (16)
Vboot U (17)
GIPG300720141542SMD
DS10559 - Rev 9
page 2/27
STGIPQ5C60T-HL, STGIPQ5C60T-HZ
Internal schematic diagram and pin configuration
Table 1. Pin description
DS10559 - Rev 9
Pin
Symbol
Description
1
GND
2
T/SD/ OD
3
VCC W
Low-voltage power supply W phase
4
HIN W
High-side logic input for W phase
5
LIN W
Low-side logic input for W phase
6
OP+
7
OPOUT
8
OP-
9
VCC V
Low-voltage power supply V phase
10
HIN V
High-side logic input for V phase
11
LIN V
Low-side logic input for V phase
12
CIN
13
VCC U
Low-voltage power supply for V phase
14
HIN U
High-side logic input for V phase
15
T/SD/ OD
16
LIN U
17
Vboot U
18
P
19
U, OUTU
20
NU
Negative DC input for U phase
21
Vboot V
Bootstrap voltage for V phase
22
V, OUTV
23
NV
Negative DC input for V phase
24
Vboot W
Bootstrap voltage for W phase
25
W, OUTW
26
NW
Ground
NTC thermistor terminal/shutdown logic input (active low)/open-drain
(comparator output)
Op-amp non-inverting input
Op-amp output
Op-amp inverting input
Comparator input
NTC thermistor terminal/shutdown logic input (active low)/open-drain
(comparator output)
Low-side logic input for U phase
Bootstrap voltage for U phase
Positive DC input
U phase output
V phase output
W phase output
Negative DC input for W phase
page 3/27
STGIPQ5C60T-HL, STGIPQ5C60T-HZ
Internal schematic diagram and pin configuration
Figure 2. Pin layout (top view) - N2DIP-26L type L
PIN 26
*
*
PIN 17
Exposed pin
not connected
Exposed pin internally
connected to GND
PIN 16
PIN 1
* Dummy pins internally connected to P (positive DC input)
GADG181220181209IG
Figure 3. Pin layout (top view) - N2DIP-26L type Z
PIN 26
*
*
PIN 17
Exposed pin
not connected
Exposed pin internally
connected to GND
PIN 1
* Dummy pins internally connected to P (positive DC input)
DS10559 - Rev 9
PIN 16
GADG181220181216IG
page 4/27
STGIPQ5C60T-HL, STGIPQ5C60T-HZ
Electrical ratings
2
Electrical ratings
TJ = 25 °C unless otherwise specified
2.1
Absolute maximum ratings
Table 2. Inverter part
Symbol
Value
Unit
600
V
Continuous collector current for each IGBT (TC = 25 °C)
5
A
ICP(2)
Peak collector current for each IGBT (less than 1 ms)
10
A
PTOT
Total power dissipation for each IGBT (TC = 25 °C)
13.6
W
VCES
IC
Parameter
(1)
Collector-emitter voltage for each IGBT (VIN
= 0)
1. Applied among HINx, LINx and GND for x = U, V, W
2. Pulse width limited by max. junction temperature.
Table 3. Control part
Symbol
Parameter
Min.
Max.
Unit
VCC
Low voltage power supply
-0.3
21
V
Vboot
Bootstrap voltage
-0.3
620
V
VOUT
Output voltage applied among OUTU,
OUTV, OUTW - GND
Vboot - 21
Vboot + 0.3
V
VCIN
Comparator input voltage
-0.3
VCC + 0.3
V
Vop+
Op-amp non-inverting input
-0.3
VCC + 0.3
V
Vop-
Op-amp inverting input
-0.3
VCC + 0.3
V
VIN
Logic input voltage applied among HINx,
LINx and GND
-0.3
15
V
VT/SD/OD
Open-drain voltage
-0.3
15
V
dVout/dt
Allowed output slew rate
50
V/ns
Table 4. Total system
DS10559 - Rev 9
Symbol
Parameter
Value
Unit
VISO
Isolation withstand voltage applied between each pin and heatsink plate (AC
voltage, t = 60 s)
1500
Vrms
TJ
Power chip operating junction temperature
-40 to 150
°C
TC
Module case operation temperature
-40 to 125
°C
page 5/27
STGIPQ5C60T-HL, STGIPQ5C60T-HZ
Thermal data
2.2
Thermal data
Table 5. Thermal data
Symbol
Rth(j-c)
DS10559 - Rev 9
Parameter
Value
Thermal resistance junction-case single IGBT
9.2
Thermal resistance junction-case single diode
15
Unit
°C/W
page 6/27
STGIPQ5C60T-HL, STGIPQ5C60T-HZ
Electrical characteristics
3
Electrical characteristics
TJ = 25 °C unless otherwise noted.
3.1
Inverter part
Table 6. Static
Symbol
ICES
VCE(sat)
VF
Parameter
Test conditions
Min.
Typ.
Max.
Unit
250
μA
2.15
V
Collector cut-off current
(VIN = 0 “logic state”)
VCE = 550 V, VCC = VBoot = 15 V
-
Collector-emitter
saturation voltage
VCC = Vboot = 15 V, VIN(1) = 0 to 5 V,
IC = 5 A
-
1.7
Diode forward voltage
VIN = 0 “logic state”, IC = 5 A
-
2.1
Min.
Typ.
Max.
Turn-on time
-
280
-
Crossover time (on)
-
130
-
-
950
-
-
115
-
-
94
-
V
1. Applied among HINx, LINx and GND for x = U, V, W
Table 7. Inductive load switching time and energy
Symbol
(1)
ton
tc(on)(1)
(1)
toff
tc(off)(1)
trr
Parameter
Turn-off time
Test conditions
VDD = 300 V,VCC = Vboot = 15 V,
(2)
Crossover time (off)
VIN
= 0 to 5 V, IC = 5 A
Reverse recovery time
(see Figure 5. Switching time definition)
Eon
Turn-on switching energy
-
110
-
Eoff
Turn-off switching energy
-
93
-
Unit
ns
µJ
1. tON and tOFF include the propagation delay times of the internal drive. tC(ON) and tC(OFF) are the switching times of IGBT
itself under the internally given gate driving conditions.
2. Applied among HINx, LINx and GND for x = U, V, W.
DS10559 - Rev 9
page 7/27
STGIPQ5C60T-HL, STGIPQ5C60T-HZ
Inverter part
Figure 4. Switching time test circuit
AM06019v2
Figure 5. Switching time definition
100% IC
100% IC
t rr
IC
VCE
VIN
VIN
t ON
VIN(ON)
VCE
IC
t C(ON)
10% IC
90% IC 10% VCE
t OFF
VIN(OFF)
(a) turn-on
t C(OFF)
10% VCE
(b) turn-off
10% IC
AM09223V1
Figure 5. Switching time definition refers to HIN, LIN inputs (active high).
DS10559 - Rev 9
page 8/27
STGIPQ5C60T-HL, STGIPQ5C60T-HZ
Control part
3.2
Control part
Table 8. Low-voltage power supply
Symbol
Min.
Typ.
Max.
Unit
VCC UV hysteresis
1.2
1.5
1.8
V
VCC_thON
VCC UV turn-ON threshold
11.5
12
12.5
V
VCC_thOFF
VCC UV turn-OFF threshold
10
10.5
11
V
VCC_hys
Parameter
Test conditions
Iqccu
Undervoltage quiescent supply
current
VCC = 10 V, T/SD/OD = 5 V,
LIN = HIN = CIN = 0 V
150
µA
Iqcc
Quiescent current
VCC = 10 V, T/SD/OD = 5 V,
LIN = HIN = CIN = 0 V
1
mA
Vref
Internal comparator (CIN)
reference voltage
0.51
0.54
0.56
V
Min.
Typ.
Max.
Unit
VBS UV hysteresis
1.2
1.5
1.8
V
VBS_thON
VBS UV turn-ON threshold
11.1
11.5
12.1
V
VBS_thOFF
VBS UV turn-OFF threshold
9.8
10
10.6
V
IQBSU
Undervoltage VBS quiescent
current
70
110
µA
150
210
µA
Table 9. Bootstrapped voltage
Symbol
VBS_hys
Parameter
Test conditions
VBS < 9 V, T/SD/OD = 5 V,
LIN = 0 V and HIN = 5 V,
CIN = 0 V
VBS = 15 V, T/SD/OD = 5 V,
IQBS
VBS quiescent current
LIN = 0 V and HIN = 5 V,
CIN = 0
RDS(on)
Bootstrap driver on-resistance
LVG ON
120
Ω
Table 10. Logic inputs
Symbol
DS10559 - Rev 9
Parameter
Vil
Low logic level voltage
Vih
High logic level voltage
Test conditions
Min.
Typ.
Max.
Unit
0.8
V
2.25
IHINh
HIN logic “1” input bias current
HIN = 15 V
IHINl
HIN logic “0” input bias current
ILINl
20
V
40
100
µA
HIN = 0 V
1
µA
LIN logic “0” input bias current
LIN = 0 V
1
µA
ILINh
LIN logic “1” input bias current
LIN = 15 V
20
40
100
µA
ISDh
SD logic “0” input bias current
SD = 15 V
210
350
477
µA
ISDl
SD logic “1” input bias current
SD = 0 V
3
µA
Dt
Dead time
See Figure 10. Dead time and
interlocking waveform definitions
180
ns
page 9/27
STGIPQ5C60T-HL, STGIPQ5C60T-HZ
Control part
Table 11. Op-amp characteristics
Symbol
Parameter
Vio
Input offset voltage
Iio
Input offset current
Iib
current(1)
Input bias
Test conditions
Min.
Typ.
Max.
Unit
6
mV
4
40
nA
100
200
nA
75
150
mV
Vic = 0 V, Vo = 7.5 V
Vic = 0 V, Vo = 7.5 V
VOL
Low level output voltage
RL = 10 kΩ to VCC
VOH
High level output voltage
RL= 10 kΩ to GND
14
14.7
V
Source, Vid = + 1 V; Vo = 0 V
16
30
mA
Sink, Vid = -1 V; Vo = VCC
50
80
mA
Slew rate
Vi = 1 - 4 V; CL = 100 pF; unity gain
2.5
3.8
V/µs
GBWP
Gain bandwidth product
Vo = 7.5 V
8
12
MHz
Avd
Large signal voltage gain
RL = 2 kΩ
70
85
dB
SVR
Supply voltage rejection ratio
vs VCC
60
75
dB
CMRR
Common mode rejection ratio
55
70
dB
Min.
Typ.
Io
SR
Output short-circuit current
1. The direction of input current is out of the IC.
Table 12. Sense comparator characteristics
Symbol
Iib
Parameter
Test conditions
Max.
Unit
Input bias current
VCIN = 1 V
-
1
µA
Vod
Open-drain low level output
voltage
Iod = 3 mA
-
0.5
V
RON_OD
Open-drain low level output
Iod = 3 mA
-
166
Ω
-
125
kΩ
RPD_SD
SD pull-down
td_comp
Comparator delay
T/SD/OD pulled to 5 V through
100 kΩ resistor
-
90
SR
Slew rate
CL = 180 pF, Rpu = 5 kΩ
-
60
tsd
Shutdown to high-/low-side driver
propagation delay
VOUT = 0, Vboot = VCC,
VIN = 0 to 3.3 V
-
125
tisd
Comparator triggering to high-/
low-side driver turn-off
propagation delay
Measured applying a voltage step
from 0 V to 3.3 V to pin CIN
-
200
resistor(1)
130
ns
V/µs
ns
1. Equivalent values as a result of the resistances of three drivers in parallel.
DS10559 - Rev 9
page 10/27
STGIPQ5C60T-HL, STGIPQ5C60T-HZ
Control part
Table 13. Truth table
Conditions
Logic input (VI)
Output
T/SD/OD
LIN
HIN
LVG
HVG
Shutdown enable half-bridge tri-state
L
X(1)
X(1)
L
L
Interlocking half-bridge tri-state
H
H
H
L
L
0 “logic state” half-bridge tri-state
H
L
L
L
L
1 “logic state” low-side direct driving
H
H
L
H
L
1 “logic state” high-side direct driving
H
L
H
L
H
1. X: don’t care.
DS10559 - Rev 9
page 11/27
STGIPQ5C60T-HL, STGIPQ5C60T-HZ
Control part
3.2.1
NTC thermistor
Figure 6. Internal structure of SD and NTC
Vbias
R SD
LIN
VT/SD/OD
Vboot
SD/OD
C SD
HVG
HIN
NTC
VCC
OUT
RPD_SD
LVG
GND
CIN
RPD_SD: equivalent value as result of resistances of three drivers in parallel.
Figure 7. Equivalent resistance (NTC//RPD_SD)
140
Equivalent Resistance (kΩ)
120
100
80
60
40
20
0
-40
-20
0
20
40
60
80
100
120
Temperature (°C)
DS10559 - Rev 9
page 12/27
STGIPQ5C60T-HL, STGIPQ5C60T-HZ
Control part
Figure 8. Equivalent resistance (NTC//RPD_SD) zoom
14
12
Equivalent Resistance (kΩ)
10
8
6
4
2
0
70
80
90
100
110
120
Temperature (°C)
Figure 9. Voltage of T/SD/OD pin according to NTC temperature
5.0
SD/OD: high
4.5
VBias = 5 V
R SD = 2.2 kΩ
VSD(V)
4.0
3.5
VBias = 3.3 V
RSD = 1.0 kΩ
3.0
2.5
2.0
25
50
75
100
125
Temperature (°C)
DS10559 - Rev 9
page 13/27
STGIPQ5C60T-HL, STGIPQ5C60T-HZ
Waveform definitions
3.3
Waveform definitions
DS10559 - Rev 9
CKIN
GG
ERO
L
INT
INT
ERO
L
CKIN
G
Figure 10. Dead time and interlocking waveform definitions
page 14/27
STGIPQ5C60T-HL, STGIPQ5C60T-HZ
Shutdown function
4
Shutdown function
The device is equipped with three half-bridge IC gate drivers and integrates a comparator for fault detection.
The comparator has an internal voltage reference VREF connected to the inverting input, while the non-inverting
input pin (CIN) can be connected to an external shunt resistor for current monitoring.
Since the comparator is embedded in the U IC gate driver, in case of fault it disables directly the U outputs,
whereas the shutdown of V and W IC gate drivers depends on the RC value of the external SD circuitry, which
fixes the disabling time.
For an effective design of the shutdown circuit, please refer to Application note AN4966.
Figure 11. Shutdown timing waveforms
GADG250120171515FSR
V REF
CI N
H IN or LIN
U
V, W
H VG or LVG
PROTECT ION
SD /OD
or
T/SD/OD
A
B
open -drain ga te
(interna l)
A
B
∗
∗
∗
∗
≅
∗
_
∗
RSD and CSD external circuitry must be designed to ensure
Please refer to AN4966 for further details.
* RNTC to be considered only when the NTC is internally connected to the T/SD/OD pin.
DS10559 - Rev 9
page 15/27
DS10559 - Rev 9
RS
+
R1
5V / 3.3V
-
VC C
C vc c
C SD
R SD
5V / 3.3V
C2
R1
HIN W
R3
ADC
R4
R1
R1
R1
SD
Temp.
Monitoring
MICROCONTROLLER
LIN W
ADC
HIN V
R2
HIN U
LIN V
R1
RS
R1
R5
C1
C1
C1
C1
DZ1
LIN U (16)
Vcc W (3)
HIN W (4)
LINW (5)
OP+ (6)
OPOUT (7)
OP- (8)
Vcc V (9)
HIN V (10)
LIN V (11)
CIN (12)
GND (1)
T / SD / OD (2)
C OP
C SF
Vcc U (13)
HIN U (14)
T / SD / OD (15)
SGN_GN D
R SF
C1
C1
NTC
LIN
GND
VCC
HIN
SD/OD
LIN
GND
OPOUT
OP-
VCC
HIN
SD/OD
LIN
GND
VCC
HIN
SD/OD
LVG
OUT
HVG
Vboot
OP+
LVG
OUT
HVG
Vboot
CIN
LVG
OUT
HVG
Vboot
RS
N W (26)
W, OUT W (25)
Vboot W (24)
N V (23)
V, OUT V (22)
Vboot V (21)
N U (20)
U, OUT U (19)
P (18)
Vboot U (17)
Cboot W
Cboot V
Cboot U
C3
C3
C3
DZ2
DZ2
DZ2
PWR_GN D
Rshunt
M
C4
Cvdc
-
+
VDC
5
LIN U
STGIPQ5C60T-HL, STGIPQ5C60T-HZ
Application circuit example
Application circuit example
Figure 12. Application circuit example
GAD250720161156FSR
Application designers are free to use a different scheme according to the specifications of the device.
page 16/27
STGIPQ5C60T-HL, STGIPQ5C60T-HZ
Guidelines
5.1
Guidelines
•
•
Input signals HIN, LIN are active high logic. A 375 kΩ (typ.) pull-down resistor is built-in for each input. To
avoid input signal oscillation, the wiring of each input should be as short as possible, and the use of RC
filters (R1, C1) on each input signal is suggested. The filters should be with a time constant of about 100 ns
and placed as close as possible to the IPM input pins.
The use of a bypass capacitor CVCC (aluminum or tantalum) can reduce the transient circuit demand on the
power supply. Also, to reduce any high-frequency switching noise distributed on the power lines, a
decoupling capacitor C2 (100 to 220 nF, with low ESR and low ESL) should be placed as close as possible
to the Vcc pin and in parallel with the bypass capacitor.
•
The use of an RC filter (RSF, CSF) is recommended to prevent protection circuit malfunction. The time
constant (RSF x CSF) should be set to 1 μs and the filter must be placed as close as possible to the CIN pin.
•
The SD is an input/output pin (open-drain type if it is used as output). A built-in thermistor NTC is internally
connected between the SD pin and GND. The voltage VSD-GND decreases as the temperature increases,
due to the pull-up resistor RSD. In order to keep the voltage always higher than the high-level logic threshold,
the pull-up resistor should be set to 1 kΩ or 2.2 kΩ for 3.3 V or 5 V MCU power supply, respectively. The
capacitor CSD of the filter on SD should be fixed no higher than 3.3 nF in order to assure the SD activation
time τA ≤ 500 ns. Besides, the filter should be placed as close as possible to the SD pin.
•
The decoupling capacitor C3 (from 100 to 220 nF, ceramic with low ESR and low ESL), in parallel with each
Cboot, filters high-frequency disturbance. Both Cboot and C3 (if present) should be placed as close as
possible to the U, V, W and Vboot pins. Bootstrap negative electrodes should be connected to U, V, W
terminals directly and separated from the main output wires.
To avoid overvoltage on the Vcc pin, a Zener diode (Dz1) can be used. Similarly on the Vboot pin, a Zener
diode (Dz2) can be placed in parallel with each Cboot.
•
•
The use of the decoupling capacitor C4 (100 to 220 nF, with low ESR and low ESL) in parallel with the
electrolytic capacitor Cvdc is useful to prevent surge destruction. Both capacitors C4 and Cvdc should be
placed as close as possible to the IPM (C4 has priority over Cvdc).
•
By integrating an application-specific type HVIC inside the module, direct coupling to the MCU terminals
without an opto-couplers is possible.
Low-inductance shunt resistors have to be used for phase leg current sensing.
In order to avoid malfunctions, the wiring on N pins, the shunt resistor and PWR_GND should be as short as
possible.
The connection of SGN_GND to PWR_GND on one point only (close to the shunt resistor terminal) can
reduce the impact of power ground fluctuation.
•
•
•
These guidelines ensure the specifications of the device for application designs. For further details, please refer to
the relevant application note.
Table 14. Recommended operating conditions
Symbol
Test conditions
VPN
Supply voltage
Applied among P-Nu, Nv, Nw
VCC
Control supply voltage
Applied to VCC-GND
VBS
High-side bias voltage
Applied to VBOOTx-OUT for x = U,
V, W
tdead
Blanking time to prevent arm-short For each input signal
fPWM
PWM input signal
TC
DS10559 - Rev 9
Parameter
Case operation temperature
-40 °C < TC < 100 °C
-40 °C < TJ < 125 °C
Min.
13.5
13
Typ.
Max.
Unit
300
500
V
15
18
V
18
V
1.5
µs
25
kHz
100
°C
page 17/27
STGIPQ5C60T-HL, STGIPQ5C60T-HZ
Electrical characteristics (curves)
6
Electrical characteristics (curves)
Figure 13. Output characteristics
IC
(A)
IGBT240715Q5C60TOC25
VCC = 13 to 18 V
8
Figure 14. Vce(sat) vs collector current
V CE(sat)
(V)
2.4
6
2.0
4
1.6
2
1.2
0
0
0.4
0.8
1.2
1.6
2.0
V CE (V)
Figure 15. IC vs case temperature
IC
(A)
IGBT240715Q5C60TVCEC
V CC = 15 V
GADG280920181449ICT
0.8
0
T J = 150 °C
T J = 25 °C
2
4
6
8
I C (A)
Figure 16. Diode VF vs forward current
VF
(V)
IGBT031020180837DVF
2.5
4
2.0
TJ = 25 °C
1.5
2
TJ = 150 °C
1.0
VCC = 15 V, TJ ≤ 150 °C
0.5
0
0
50
100
TC (°C)
Figure 17. Eon switching energy vs collector current
Eon
(mJ)
IGBT240715Q5C60TSLC
VDD = 300 V, VCC = Vboot = 15 V
0
0
2
4
IF (A)
Figure 18. Eoff switching energy vs collector current
Eoff
(mJ)
IGBT240715Q5C60TSLC2
VDD = 300 V, VCC = Vboot = 15 V
0.20
TJ = 150 °C
0.24
Tj = 150 °C
0.16
0.12
0.16
TJ = 25 °C
0.08
0.08
DS10559 - Rev 9
8
0.24
0.32
0
0
6
Tj = 25 °C
0.04
2
4
6
8
IC (A)
0
0
2
4
6
8
IC (A)
page 18/27
STGIPQ5C60T-HL, STGIPQ5C60T-HZ
Electrical characteristics (curves)
Figure 19. Thermal impedance for IGBT
K
Zthjc N2DIP-26L
10 -1
10 -2
10 -3
10 -5
DS10559 - Rev 9
10 -4
10 -3
10 -2
10 -1
10 0
tp (s)
page 19/27
STGIPQ5C60T-HL, STGIPQ5C60T-HZ
Package information
7
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.
7.1
N2DIP-26L type L package information
Figure 20. N2DIP-26L type L package outline
8558322_typeL_rev3
DS10559 - Rev 9
page 20/27
STGIPQ5C60T-HL, STGIPQ5C60T-HZ
N2DIP-26L type L package information
Table 15. N2DIP-26L type L mechanical data
Dim.
DS10559 - Rev 9
mm
Min.
Typ.
Max.
A
4.80
5.10
5.40
A1
0.80
1.00
1.20
A2
4.00
4.10
4.20
A3
1.70
1.80
1.90
A4
1.70
1.80
1.90
A5
8.10
8.40
8.70
A6
1.75
b
0.53
0.72
b2
0.83
1.02
c
0.46
0.59
D
32.05
D1
2.10
D2
1.85
D3
32.15
32.25
30.65
30.75
30.85
E
12.35
12.45
12.55
e
1.70
1.80
1.90
e1
2.40
2.50
2.60
eB1
14.25
14.55
14.85
L
0.85
1.05
1.25
Dia
3.10
3.20
3.30
page 21/27
STGIPQ5C60T-HL, STGIPQ5C60T-HZ
N2DIP-26L type Z package information
7.2
N2DIP-26L type Z package information
Figure 21. N2DIP-26L type Z package outline
8558322_typeZ_rev3
DS10559 - Rev 9
page 22/27
STGIPQ5C60T-HL, STGIPQ5C60T-HZ
N2DIP-26L type Z package information
Table 16. N2DIP-26L type Z mechanical data
Dim.
DS10559 - Rev 9
mm
Min.
Typ.
Max.
A
4.80
5.10
5.40
A1
0.80
1.00
1.20
A2
4.00
4.10
4.20
A3
1.70
1.80
1.90
A4
1.70
1.80
1.90
A5
8.10
8.40
8.70
A6
1.75
b
0.53
0.72
b2
0.83
1.02
c
0.46
0.59
D
32.05
D1
2.10
D2
1.85
D3
32.15
32.25
30.65
30.75
30.85
E
12.35
12.45
12.55
e
1.70
1.80
1.90
e1
2.40
2.50
2.60
eB1
16.10
16.40
16.70
eB2
21.18
21.48
21.78
L
0.85
1.05
1.25
Dia
3.10
3.20
3.30
page 23/27
STGIPQ5C60T-HL, STGIPQ5C60T-HZ
N2DIP-26L packing information
7.3
N2DIP-26L packing information
Figure 22. N2DIP-26L tube (dimensions are in mm)
DS10559 - Rev 9
page 24/27
STGIPQ5C60T-HL, STGIPQ5C60T-HZ
Revision history
Table 17. Document revision history
Date
Revision
08-Sep-2014
1
Changes
Initial release.
– Minor text edits throughout the document.
– Updated Figure 1, 4, 7, 9 and 10.
– Added Figure 6 and Figure 7.
29-Oct-2014
2
– Updated values for the ISDh and ISDl parameters in Table 10: Logic inputs.
– Added footnote to Table 12.
– Removed NTC thermistor table and “Resistance variation vs. temperature”
equation from Section 3.1.1: NTC thermistor
07-Nov-2014
3
Minor text and formatting edits throughout document.
Minor text and formatting edits throughout document.
24-Jul-2015
4
Updated cover page package image.
Updated Table 3, Table 6, Table 7, Table 8, Table 9, and Table 10
Added Section 7: Electrical characteristics (curves)
21-Aug-2015
5
09-Dec-2015
6
Modified: Figure 13
Minor text changes
Modified: Features
Minor text changes
Modified features on cover page.
Modified Table 7: "Static", Table 8: "Inductive load switching time and energy".
Modified Figure 2: "Switching time test circuit".
17-Mar-2017
7
Modified Table 9: "Low voltage power supply", Table 12: "Op-amp
characteristics".
Modified Figure 4: "Internal structure of SD and NTC".
Modified Figure 10: "Application circuit example".
Minor text changes.
Removed maturity status indication from cover page.
Updated package silhouette on cover page.
15-Oct-2018
8
Updated Section 4 Shutdown function and Section 5.1 Guidelines.
Updated Section 6 Electrical characteristics (curves).
Minor text changes
Added Figure 2. Pin layout (top view) - N2DIP-26L type L and Figure 3. Pin
layout (top view) - N2DIP-26L type Z.
01-Mar-2019
9
Modified Figure 11. Shutdown timing waveforms.
Minor text changes.
DS10559 - Rev 9
page 25/27
STGIPQ5C60T-HL, STGIPQ5C60T-HZ
Contents
Contents
1
Internal schematic diagram and pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
3
2.1
Absolute maximum ratings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.2
Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3.1
Inverter part . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3.2
Control part . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3.2.1
3.3
NTC thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Waveform definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4
Shutdown function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
5
Application circuit example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
5.1
Guidelines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
6
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
7
Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
7.1
N2DIP-26L type L package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
7.2
N2DIP-26L type Z package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
7.3
N2DIP-26L packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25
DS10559 - Rev 9
page 26/27
STGIPQ5C60T-HL, STGIPQ5C60T-HZ
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST
products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2019 STMicroelectronics – All rights reserved
DS10559 - Rev 9
page 27/27