STGIPQ8C60T-HZ

STGIPQ8C60T-HZ Datasheet SLLIMM™ nano - 2nd series IPM, 3-phase inverter, 8 A, 600 V, short‑circuit rugged IGBTs Features • • • • • • • • • • IPM 8 A, 600 V, 3-phase IGBT inverter bridge including 3 control ICs for gate driving and freewheeling diodes 3.3 V, 5 V, 15 V TTL/CMOS input comparators with hysteresis and pull-down/ pull-up resistors Internal bootstrap diode Optimized for low electromagnetic interference Undervoltage lockout Short-circuit rugged TFS IGBTs Shutdown function Interlocking function Op-amp for advanced current sensing Comparator for fault protection against overcurrent Isolation ratings of 1500 Vrms/min. • • UL recognition: UL 1557, file E81734 NTC (UL 1434 CA 2 and 4) • Applications • • 3-phase inverters for motor drives Dish washers, refrigerator compressors, heating systems, air-conditioning fans, draining and recirculation pumps Description Product status link STGIPQ8C60T-HZ Product summary Order code STGIPQ8C60T-HZ Marking GIPQ8C60T-HZ Package N2DIP-26L type Z Packing Tube This second series of SLLIMM (small low-loss intelligent molded module)-nano provides a compact, high-performance AC motor drive in a simple, rugged design. It is composed of six improved short-circuit rugged trench gate fieldstop IGBTs with freewheeling diodes and three half-bridge HVICs for gate driving, providing low electromagnetic interference (EMI) characteristics with optimized switching speed. The package is designed to allow a better and more easily screwed-on heatsink, and is optimized for thermal performance and compactness in built-in motor applications or other low power applications where assembly space is limited. This IPM includes a completely uncommitted operational amplifier and a comparator that can be used to design a fast and efficient protection circuit. SLLIMM™ is a trademark of STMicroelectronics. DS11492 - Rev 4 - January 2019 For further information contact your local STMicroelectronics sales office. www.st.com STGIPQ8C60T-HZ Internal schematic diagram and pin configuration 1 Internal schematic diagram and pin configuration Figure 1. Internal schematic diagram N W (26) GND (1) T/ SD / OD (2) NTC Vcc W (3) HIN W (4) W, OUT W (25) GND HVG VCC HIN OUT Vboot W (24) LVG SD/OD LIN W (5) LIN Vboot OP+ (6) N V (23) OPOUT (7) GND OP+ OPOUT OP- (8) OP- VCC Vcc V (9) HIN HVG V, OUT V (22) OUT LVG SD/OD HIN V (10) LIN Vboot Vboot V (21) LIN V (11) CIN (12) GND N U (20) CIN HVG Vcc U (13) VCC HIN U (14) HIN OUT U, OUT U (19) LVG SD/OD LIN Vboot P (18) T / SD / OD (15) LIN U (16) Vboot U (17) GIPG300720141542SMD DS11492 - Rev 4 page 2/25 STGIPQ8C60T-HZ Internal schematic diagram and pin configuration Table 1. Pin description DS11492 - Rev 4 Pin Symbol Description 1 GND 2 T/SD/ OD 3 VCC W Low-voltage power supply W phase 4 HIN W High-side logic input for W phase 5 LIN W Low-side logic input for W phase 6 OP+ 7 OPOUT 8 OP- 9 VCC V Low-voltage power supply V phase 10 HIN V High-side logic input for V phase 11 LIN V Low-side logic input for V phase 12 CIN 13 VCC U Low-voltage power supply for V phase 14 HIN U High-side logic input for V phase 15 T/SD/ OD 16 LIN U 17 Vboot U 18 P 19 U, OUTU 20 NU Negative DC input for U phase 21 Vboot V Bootstrap voltage for V phase 22 V, OUTV 23 NV Negative DC input for V phase 24 Vboot W Bootstrap voltage for W phase 25 W, OUTW 26 NW Ground NTC thermistor terminal/shutdown logic input (active low)/open-drain (comparator output) Op-amp non-inverting input Op-amp output Op-amp inverting input Comparator input NTC thermistor terminal/shutdown logic input (active low)/open-drain (comparator output) Low-side logic input for U phase Bootstrap voltage for U phase Positive DC input U phase output V phase output W phase output Negative DC input for W phase page 3/25 STGIPQ8C60T-HZ Internal schematic diagram and pin configuration Figure 2. Pin layout (top view) - N2DIP-26L type Z PIN 26 * * PIN 17 Exposed pin not connected Exposed pin internally connected to GND PIN 1 * Dummy pins internally connected to P (positive DC input) DS11492 - Rev 4 PIN 16 GADG181220181216IG page 4/25 STGIPQ8C60T-HZ Electrical ratings 2 Electrical ratings TJ = 25 °C unless otherwise specified 2.1 Absolute maximum ratings Table 2. Inverter part Symbol Value Unit 600 V Continuous collector current for each IGBT (TC = 25 °C) 8 A ICP(1) Peak collector current for each IGBT (less than 1 ms) 16 A PTOT Total power dissipation for each IGBT (TC = 25 °C) 19.2 W tSCW Short-circuit withstand time (VCE = 300 V, TJ = 125 °C, VCC = Vboot = 15 V, VIN(2) = 0 to 5 V) 5 µs VCES IC Parameter (2) Collector-emitter voltage for each IGBT (VIN = 0) 1. Pulse width limited by maximum junction temperature. 2. Applied among HINx, LINx and GND for x = U, V, W Table 3. Control part Symbol Parameter Min. Max. Unit VCC Low voltage power supply -0.3 21 V Vboot Bootstrap voltage -0.3 620 V VOUT Output voltage applied among OUTU, OUTV, OUTW - GND Vboot - 21 Vboot + 0.3 V VCIN Comparator input voltage -0.3 VCC + 0.3 V Vop+ Op-amp non-inverting input -0.3 VCC + 0.3 V Vop- Op-amp inverting input -0.3 VCC + 0.3 V VIN Logic input voltage applied among HINx, LINx and GND -0.3 15 V VT/SD/OD Open-drain voltage -0.3 15 V dVout/dt Allowed output slew rate 50 V/ns Value Unit 1500 Vrms Table 4. Total system Symbol VISO DS11492 - Rev 4 Parameter Isolation withstand voltage applied to each pin and heatsink plate (AC voltage, t = 60 s) TJ Power chip operating junction temperature -40 to 150 °C TC Module case operation temperature -40 to 125 °C page 5/25 STGIPQ8C60T-HZ Absolute maximum ratings 2.1.1 Thermal data Table 5. Thermal data Symbol Rth(j-c) DS11492 - Rev 4 Parameter Value Thermal resistance junction-case single IGBT 6.5 Thermal resistance junction-case single diode 10 Unit °C/W page 6/25 STGIPQ8C60T-HZ Electrical characteristics 3 Electrical characteristics TJ = 25 °C unless otherwise noted. 3.1 Inverter part Table 6. Static Symbol ICES VCE(sat) VF Parameter Test conditions Min. Typ. Max. Unit 250 μA 2.4 V Collector cut-off current (VIN(1) = 0 “logic state”) VCE = 550 V, VCC = VBoot = 15 V - Collector-emitter saturation voltage VCC = Vboot = 15 V, VIN(1) = 0 to 5 V, IC = 8 A - 2.0 Diode forward voltage VIN(1) = 0 “logic state”, IC = 8 A - 2.4 Min. Typ. Max. Turn-on time - 290 - Crossover time (on) - 145 - V 1. Applied among HINx, LINx and GND for x = U, V, W Table 7. Inductive load switching time and energy Symbol ton(1) tc(on)(1) toff (1) tc(off)(1) trr Parameter Test conditions Turn-off time VDD = 300 V,VCC = Vboot = 15 V, - 515 - Crossover time (off) VIN(2) = 0 to 5 V, IC = 8 A - 90 - Reverse recovery time (see Figure 4. Switching time definition) - 110 - Eon Turn-on switching energy - 200 - Eoff Turn-off switching energy - 95 - Unit ns µJ 1. tON and tOFF include the propagation delay times of the internal drive. tC(ON) and tC(OFF) are the switching times of IGBT itself under the internally given gate driving conditions. 2. Applied among HINx, LINx and GND for x = U, V, W. DS11492 - Rev 4 page 7/25 STGIPQ8C60T-HZ Inverter part Figure 3. Switching time test circuit AM06019v2 Figure 4. Switching time definition 100% IC 100% IC t rr IC VCE VIN VIN t ON VIN(ON) t C(ON) 10% IC 90% IC 10% VCE (a) turn-on DS11492 - Rev 4 VCE IC t OFF VIN(OFF) t C(OFF) 10% VCE (b) turn-off 10% IC AM09223V1 page 8/25 STGIPQ8C60T-HZ Control part 3.2 Control part (VCC = 15 V unless otherwise specified) Table 8. Low-voltage power supply Symbol Min. Typ. Max. Unit VCC UV hysteresis 1.2 1.5 1.8 V VCC_thON VCC UV turn-ON threshold 11.5 12 12.5 V VCC_thOFF VCC UV turn-OFF threshold 10 10.5 11 V VCC_hys Parameter Test conditions Iqccu Undervoltage quiescent supply current VCC = 10 V, VT/SD/OD = 5 V, LIN = HIN = CIN = 0 V 150 µA Iqcc Quiescent current VCC = 10 V, VT/SD/OD = 5 V, LIN = HIN = CIN = 0 V 1 mA Vref Internal comparator (CIN) reference voltage 0.51 0.54 0.56 V Min. Typ. Max. Unit VBS UV hysteresis 1.2 1.5 1.8 V VBS_thON VBS UV turn-ON threshold 11.1 11.5 12.1 V VBS_thOFF VBS UV turn-OFF threshold 9.8 10 10.6 V IQBSU Undervoltage VBS quiescent current 70 110 µA 150 210 µA Table 9. Bootstrapped voltage Symbol VBS_hys Parameter Test conditions VBS < 9 V, VT/SD/OD = 5 V, LIN = 0 V and HIN = 5 V, CIN = 0 V VBS = 15 V, VT/SD/OD = 5 V, IQBS VBS quiescent current LIN = 0 V and HIN = 5 V, CIN = 0 V RDS(on) Bootstrap driver on-resistance LVG ON 120 Ω Table 10. Logic inputs Symbol DS11492 - Rev 4 Parameter Vil Low logic level voltage Vih High logic level voltage Test conditions Min. Typ. Max. Unit 0.8 V 2.25 IHINh HIN logic “1” input bias current HIN = 15 V IHINl HIN logic “0” input bias current ILINl 20 V 40 100 µA HIN = 0 V 1 µA LIN logic “0” input bias current LIN = 0 V 1 µA ILINh LIN logic “1” input bias current LIN = 15 V 20 40 100 µA ISDh SD logic “0” input bias current SD = 15 V 210 350 477 µA ISDl SD logic “1” input bias current SD = 0 V 3 µA Dt Dead time See Figure 9. Dead time and interlocking waveform definitions 180 ns page 9/25 STGIPQ8C60T-HZ Control part Table 11. Op-amp characteristics Symbol Parameter Vio Input offset voltage Iio Input offset current Iib current(1) Input bias Test conditions Min. Vic = 0 V, Vo = 7.5 V Typ. Max. Unit 6 mV 4 40 nA 100 200 nA 75 150 mV VOL Low level output voltage RL = 10 kΩ to VCC VOH High level output voltage RL= 10 kΩ to GND 14 14.7 V Source, Vid = + 1 V; Vo = 0 V 16 30 mA Sink, Vid = -1 V; Vo = VCC 50 80 mA Slew rate Vi = 1 - 4 V; CL = 100 pF; unity gain 2.5 3.8 V/µs GBWP Gain bandwidth product Vo = 7.5 V 8 12 MHz Avd Large signal voltage gain RL = 2 kΩ 70 85 dB SVR Supply voltage rejection ratio vs VCC 60 75 dB CMRR Common mode rejection ratio 55 70 dB Min. Typ. Io SR Output short-circuit current 1. The direction of input current is out of the IC. Table 12. Sense comparator characteristics Symbol Iib Parameter Test conditions Max. Unit Input bias current VCIN = 1 V - 1 µA Vod Open-drain low level output voltage Iod = 3 mA - 0.5 V RON_OD Open-drain low level output Iod = 3 mA - 166 Ω - 125 kΩ RPD_SD SD pull-down td_comp Comparator delay VT/SD/OD pulled to 5 V through 100 kΩ resistor - 90 SR Slew rate CL = 180 pF, Rpu = 5 kΩ - 60 tsd Shutdown to high-/low-side driver propagation delay VOUT = 0, Vboot = VCC, VIN = 0 to 3.3 V 50 125 200 tisd Comparator triggering to high-/ low-side driver turn-off propagation delay Measured applying a voltage step from 0 V to 3.3 V to pin CIN 50 200 250 resistor(1) 130 ns V/µs ns 1. Equivalent values as a result of the resistances of three drivers in parallel. DS11492 - Rev 4 page 10/25 STGIPQ8C60T-HZ Control part Table 13. Truth table Logic input (VI) Conditions Output T/SD/OD LIN HIN LVG HVG Shutdown enable half-bridge tri-state L X(1) X(1) L L Interlocking half-bridge tri-state H H H L L 0 “logic state” half-bridge tri-state H L L L L 1 “logic state” low-side direct driving H H L H L 1 “logic state” high-side direct driving H L H L H 1. X: don’t care. 3.2.1 NTC thermistor Figure 5. Internal structure of SD and NTC Vbias R SD LIN VT/SD/OD Vboot SD/OD C SD HVG HIN NTC VCC OUT RPD_SD LVG GND CIN RPD_SD: equivalent value as result of resistances of three drivers in parallel. Figure 6. Equivalent resistance (NTC//RPD_SD) 140 Equivalent Resistance (kΩ) 120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 120 Temperature (°C) DS11492 - Rev 4 page 11/25 STGIPQ8C60T-HZ Control part Figure 7. Equivalent resistance (NTC//RPD_SD) zoom 14 12 Equivalent Resistance (kΩ) 10 8 6 4 2 0 70 80 90 100 110 120 Temperature (°C) Figure 8. Voltage of T/SD/OD pin according to NTC temperature 5.0 SD/OD: high 4.5 VBias = 5 V R SD = 2.2 kΩ VSD(V) 4.0 3.5 VBias = 3.3 V RSD = 1.0 kΩ 3.0 2.5 2.0 25 50 75 100 125 Temperature (°C) DS11492 - Rev 4 page 12/25 STGIPQ8C60T-HZ Waveform definitions 3.3 Waveform definitions DS11492 - Rev 4 CKIN GG ERO L INT INT ERO L CKIN G Figure 9. Dead time and interlocking waveform definitions page 13/25 STGIPQ8C60T-HZ Shutdown function 4 Shutdown function The device is equipped with three half-bridge IC gate drivers and integrates a comparator for fault detection. The comparator has an internal voltage reference VREF connected to the inverting input, while the non-inverting input pin (CIN) can be connected to an external shunt resistor for current monitoring. Since the comparator is embedded in the U IC gate driver, in case of fault it disables directly the U outputs, whereas the shutdown of V and W IC gate drivers depends on the RC value of the external SD circuitry, which fixes the disabling time. For an effective design of the shutdown circuit, please refer to Application note AN4966. DS11492 - Rev 4 page 14/25 STGIPQ8C60T-HZ Shutdown function Figure 10. Shutdown timing waveforms V REF CI N H IN or LIN U V, W H VG or LVG PROTECT ION SD /OD or T/SD/OD A B open -drain ga te (interna l) A B ∗ ∗ ∗ ∗ ≅ ∗ _ ∗ RSD and CSD external circuitry must be designed to ensure Please refer to AN4966 for further details. * RNTC to be considered only when the NTC is internally connected to the T/SD/OD pin. GADG250120171515FSR DS11492 - Rev 4 page 15/25 DS11492 - Rev 4 RS + R1 5V / 3.3V - VC C C vc c C SD R SD 5V / 3.3V C2 R1 HIN W R3 ADC R4 R1 R1 R1 SD Temp. Monitoring MICROCONTROLLER LIN W ADC HIN V R2 HIN U LIN V R1 RS R1 R5 C1 C1 C1 C1 DZ1 LIN U (16) Vcc W (3) HIN W (4) LINW (5) OP+ (6) OPOUT (7) OP- (8) Vcc V (9) HIN V (10) LIN V (11) CIN (12) GND (1) T / SD / OD (2) C OP C SF Vcc U (13) HIN U (14) T / SD / OD (15) SGN_GN D R SF C1 C1 NTC LIN GND VCC HIN SD/OD LIN GND OPOUT OP- VCC HIN SD/OD LIN GND VCC HIN SD/OD LVG OUT HVG Vboot OP+ LVG OUT HVG Vboot CIN LVG OUT HVG Vboot RS N W (26) W, OUT W (25) Vboot W (24) N V (23) V, OUT V (22) Vboot V (21) N U (20) U, OUT U (19) P (18) Vboot U (17) Cboot W Cboot V Cboot U C3 C3 C3 DZ2 DZ2 DZ2 PWR_GN D Rshunt M C4 Cvdc - + VDC 5 LIN U Application circuit example STGIPQ8C60T-HZ Application circuit example Figure 11. Application circuit example GAD250720161156FSR Application designers are free to use a different scheme according to the specifications of the device. page 16/25 STGIPQ8C60T-HZ Guidelines 5.1 Guidelines • • Input signals HIN, LIN are active high logic. A 375 kΩ (typ.) pull-down resistor is built-in for each input. To avoid input signal oscillation, the wiring of each input should be as short as possible, and the use of RC filters (R1, C1) on each input signal is suggested. The filters should be with a time constant of about 100 ns and placed as close as possible to the IPM input pins. The use of a bypass capacitor CVCC (aluminum or tantalum) can reduce the transient circuit demand on the power supply. Also, to reduce any high-frequency switching noise distributed on the power lines, a decoupling capacitor C2 (100 to 220 nF, with low ESR and low ESL) should be placed as close as possible to the Vcc pin and in parallel with the bypass capacitor. • The use of an RC filter (RSF, CSF) is recommended to prevent protection circuit malfunction. The time constant (RSF x CSF) should be set to 1 μs and the filter must be placed as close as possible to the CIN pin. • The SD is an input/output pin (open-drain type if it is used as output). A built-in thermistor NTC is internally connected between the SD pin and GND. The voltage VSD-GND decreases as the temperature increases, due to the pull-up resistor RSD. In order to keep the voltage always higher than the high-level logic threshold, the pull-up resistor should be set to 1 kΩ or 2.2 kΩ for 3.3 V or 5 V MCU power supply, respectively. The capacitor CSD of the filter on SD should be fixed no higher than 3.3 nF in order to assure the SD activation time τA ≤ 500 ns. Besides, the filter should be placed as close as possible to the SD pin. • The decoupling capacitor C3 (from 100 to 220 nF, ceramic with low ESR and low ESL), in parallel with each Cboot, filters high-frequency disturbance. Both Cboot and C3 (if present) should be placed as close as possible to the U, V, W and Vboot pins. Bootstrap negative electrodes should be connected to U, V, W terminals directly and separated from the main output wires. To avoid overvoltage on the Vcc pin, a Zener diode (Dz1) can be used. Similarly on the Vboot pin, a Zener diode (Dz2) can be placed in parallel with each Cboot. • • The use of the decoupling capacitor C4 (100 to 220 nF, with low ESR and low ESL) in parallel with the electrolytic capacitor Cvdc is useful to prevent surge destruction. Both capacitors C4 and Cvdc should be placed as close as possible to the IPM (C4 has priority over Cvdc). • By integrating an application-specific type HVIC inside the module, direct coupling to the MCU terminals without an opto-couplers is possible. Low-inductance shunt resistors have to be used for phase leg current sensing. In order to avoid malfunctions, the wiring on N pins, the shunt resistor and PWR_GND should be as short as possible. The connection of SGN_GND to PWR_GND on one point only (close to the shunt resistor terminal) can reduce the impact of power ground fluctuation. • • • These guidelines ensure the specifications of the device for application designs. For further details, please refer to the relevant application note. Table 14. Recommended operating conditions Symbol Test conditions VPN Supply voltage Applied among P-Nu, Nv, Nw VCC Control supply voltage Applied to VCC-GND VBS High-side bias voltage Applied to VBOOTx-OUT for x = U, V, W tdead Blanking time to prevent arm-short For each input signal fPWM PWM input signal TC DS11492 - Rev 4 Parameter Case operation temperature -40 °C < TC < 100 °C -40 °C < TJ < 125 °C Min. 13.5 13 Typ. Max. Unit 300 500 V 15 18 V 18 V 1 µs 25 kHz 100 °C page 17/25 STGIPQ8C60T-HZ Electrical characteristics (curves) 6 Electrical characteristics (curves) Figure 12. Output characteristics (TJ = 25°C) IC (A) IGBT250720161421OC25 VGE = 13 - 18 V 8 Figure 13. VCE(sat) vs collector current VCE(SAT) (V) 2 4 1.6 2 1.2 0.6 1.2 1.8 VCE (V) TJ = 25 °C 2 4 6 8 IC (A) Figure 15. IC vs case temperature IC (A) IGBT260620151410DVF 3.0 2.5 TJ = 150 °C 0.8 0 Figure 14. Diode VF vs forward current VF (V) VCC = 15 V 2.4 6 0 0 IGBT161220161058VCEC GADG28012019945CD 8.0 TJ= 25 °C 6.0 2.0 TJ= 150 °C 1.5 4.0 1.0 2.0 0.5 VCC ≥ 15 V, TJ ≤ 150 °C 0 0 4 8 12 IF(A) Figure 16. Eon switching energy vs collector current IGBT250720161523SLC Eon (mJ) VDD = 300 V, VCC = Vboot = 15 V 0.0 0 50 100 125 TC (°C) Figure 17. Eoff switching energy vs collector current Eoff (mJ) IGBT250720161533SLC VDD = 300 V, VCC = Vboot = 15 V 0.36 0.12 TJ = 150 °C 0.27 TJ = 150 °C 0.18 TJ = 25 °C 0.06 TJ = 25 °C 0.09 0 0 DS11492 - Rev 4 2 4 6 8 IC (A) 0 0 2 4 6 8 IC (A) page 18/25 STGIPQ8C60T-HZ Electrical characteristics (curves) Figure 18. Thermal impedance for IGBT K Zthjc N2DIP-26L IGBT 10 -1 10 -2 10 -3 10 -5 DS11492 - Rev 4 10 -4 10 -3 10 -2 10 -1 10 0 tp (s) page 19/25 STGIPQ8C60T-HZ Package information 7 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 7.1 N2DIP-26L type Z package information Figure 19. N2DIP-26L type Z package outline 8558322_typeZ_rev3 DS11492 - Rev 4 page 20/25 STGIPQ8C60T-HZ N2DIP-26L type Z package information Table 15. N2DIP-26L type Z mechanical data Dim. DS11492 - Rev 4 mm Min. Typ. Max. A 4.80 5.10 5.40 A1 0.80 1.00 1.20 A2 4.00 4.10 4.20 A3 1.70 1.80 1.90 A4 1.70 1.80 1.90 A5 8.10 8.40 8.70 A6 1.75 b 0.53 0.72 b2 0.83 1.02 c 0.46 0.59 D 32.05 D1 2.10 D2 1.85 D3 32.15 32.25 30.65 30.75 30.85 E 12.35 12.45 12.55 e 1.70 1.80 1.90 e1 2.40 2.50 2.60 eB1 16.10 16.40 16.70 eB2 21.18 21.48 21.78 L 0.85 1.05 1.25 Dia 3.10 3.20 3.30 page 21/25 STGIPQ8C60T-HZ N2DIP-26L packing information 7.2 N2DIP-26L packing information Figure 20. N2DIP-26L tube (dimensions are in mm) DS11492 - Rev 4 page 22/25 STGIPQ8C60T-HZ Revision history Table 16. Document revision history Date Revision 22-Jan-2016 1 Changes Initial release. Document status promoted from target to preliminary data. Updated features in cover page, Section 3: Electrical 26-Jul-2016 2 characteristics, Section 3.2: Control part, Section 5: Application circuit example and Section 6: Guidelines. Added Section 7: Electrical characteristics (curves). 16-Dec-2016 3 Document status promoted from preliminary to production data. Updated Figure 12: VCE(sat) vs. collector current. Updated N2DIP-26L type Z cover image silhouette and Section Features. 30-Jan-2019 4 Added Figure 2. Pin layout (top view) - N2DIP-26L type Z and Figure 15. IC vs case temperature. Updated Section 3.2 Control part and Figure 14. Diode VF vs forward current. Minor text changes. DS11492 - Rev 4 page 23/25 STGIPQ8C60T-HZ Contents Contents 1 Internal schematic diagram and pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 2.1 Absolute maximum ratings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1.1 3 Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3.1 Inverter part . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3.2 Control part . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 3.2.1 3.3 NTC thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Waveform definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4 Shutdown function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 5 Application circuit example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 5.1 Guidelines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 7 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 7.1 N2DIP-26L type Z package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 7.2 N2DIP-26L packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23 DS11492 - Rev 4 page 24/25 STGIPQ8C60T-HZ IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS11492 - Rev 4 page 25/25