STGIPS14K60T-H
SLLIMM™ small low-loss intelligent molded module
IPM, 3-phase inverter, 14 A, 600 V short-circuit rugged IGBT
Datasheet - production data
Applications
• 3-phase inverters for motor drives
• Home appliances, such as washing machines,
refrigerators, air conditioners and sewing
machines
Description
This intelligent power module provides a
compact, high performance AC motor drive in a
simple, rugged design. Combining ST proprietary
control ICs with the most advanced short-circuitrugged IGBT system technology, this device is
ideal for 3-phase inverters in applications such as
home appliances and air conditioners. SLLIMM™
is a trademark of STMicroelectronics.
SDIP-25L
Features
• IPM 14 A, 600 V 3-phase IGBT inverter bridge
including control ICs for gate driving and freewheeling diodes
• Short-circuit rugged IGBTs
• VCE(sat) negative temperature coefficient
• 3.3 V, 5 V, 15 V CMOS/TTL inputs
comparators with hysteresis and pull-down /
pull-up resistors
• Undervoltage lockout
• Internal bootstrap diode
• Interlocking function
• Shutdown function
• DBC substrate leading to low thermal
resistance
• Isolation rating of 2500 Vrms/min
• 4.7 kΩ NTC for temperature control
• UL recognized: UL1557 file E81734
Table 1. Device summary
Order code
Marking
Package
Packing
STGIPS14K60T-H
GIPS14K60T-H
SDIP-25L
Tube
April 2015
This is information on a product in full production.
DocID024476 Rev 3
1/19
www.st.com
Contents
STGIPS14K60T-H
Contents
1
Internal block diagram and pin configuration . . . . . . . . . . . . . . . . . . . . 3
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
2.1
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.2
Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3.1
Control part . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3.1.1
3.2
4
6
2/19
Waveform definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Applications information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.1
5
NTC thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Recommendations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5.1
SDIP-25L package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5.2
Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
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1
Internal block diagram and pin configuration
Internal block diagram and pin configuration
Figure 1. Internal block diagram
AM09320v2
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Internal block diagram and pin configuration
STGIPS14K60T-H
Table 2. Pin description
Pin n°
Symbol
Description
1
OUTU
High side reference output for U phase
2
Vboot U
Bootstrap voltage for U phase
3
LINU
Low side logic input for U phase
4
HINU
High side logic input for U phase
5
VCC
Low voltage power supply
6
OUTV
High side reference output for V phase
7
Vboot V
Bootstrap voltage for V phase
8
GND
Ground
9
LINV
Low side logic input for V phase
10
HINV
High side logic input for V phase
11
OUTW
High side reference output for W phase
12
Vboot W
Bootstrap voltage for W phase
13
LINW
Low side logic input for W phase
14
HINW
High side logic input for W phase
15
SD
Shut down logic input (active low)
16
T1
NTC thermistor terminal
17
NW
Negative DC input for W phase
18
W
W phase output
19
P
Positive DC input
20
NV
21
V
V phase output
22
P
Positive DC input
23
NU
Negative DC input for U phase
24
U
U phase output
25
P
Positive DC input
Negative DC input for V phase
Figure 2. Pin layout (bottom view)
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STGIPS14K60T-H
Electrical ratings
2
Electrical ratings
2.1
Absolute maximum ratings
Table 3. Inverter part
Symbol
Parameter
Value
Unit
VPN
Supply voltage applied between P - NU, NV, NW
450
V
VPN(surge)
Supply voltage (surge) applied between P - NU,
NV, NW
500
V
VCES
Each IGBT collector emitter voltage (VIN(1) = 0)
600
V
± IC(2)
Each IGBT continuous collector current at
TC = 25°C
14
A
Each IGBT pulsed collector current
30
A
Each IGBT total dissipation at TC = 25°C
42
W
Short-circuit withstand time, VCE = 0.5 V(BR)CES
Tj = 125 °C, VCC = Vboot= 15 V, VIN (1)= 5 V
5
µs
± ICP (3)
PTOT
tscw
1. Applied between HINi, LINi and GND for i = U, V, W.
2. Calculated according to the iterative formula:
Tj ( max ) – TC
IC ( T C ) = ------------------------------------------------------------------------------------------------------R thj – c × V CE ( sat ) ( max ) ( T j ( max ), I C ( T C ) )
3. Pulse width limited by max junction temperature.
Table 4. Control part
Symbol
Parameter
Min.
Max.
Unit
Vboot - 21
Vboot + 0.3
V
VOUT
Output voltage applied between OUTU, OUTV,
OUTW - GND
VCC
Low voltage power supply
- 0.3
21
V
Vboot
Bootstrap voltage
- 0.3
620
V
VIN
Logic input voltage applied between HIN, LIN and
GND
- 0.3
15
V
VSD
Open drain voltage
- 0.3
15
V
50
V/ns
dVOUT/dt
Allowed output slew rate
Table 5. Total system
Symbol
VISO
Parameter
Isolation withstand voltage applied between each
pin and heatsink plate (AC voltage, t = 60 sec.)
Value
Unit
2500
V
TC
Module case operation temperature
-40 to 125
°C
TJ
Power chips operating junction temperature
-40 to 150
°C
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Electrical ratings
2.2
STGIPS14K60T-H
Thermal data
Table 6. Thermal data
Symbol
RthJC
6/19
Parameter
Value
Unit
Thermal resistance junction-case single IGBT max.
3.0
°C/W
Thermal resistance junction-case single diode max.
5.5
°C/W
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3
Electrical characteristics
Electrical characteristics
TJ = 25 °C unless otherwise specified.
Table 7. Inverter part
Value
Symbol
VCE(sat)
ICES
VF
Parameter
Test conditions
Unit
Min.
Typ.
Max.
VCC = Vboot = 15 V,
VIN(1)= 5 V,
IC = 7 A
-
2.1
2.5
VCC = Vboot = 15 V,
VIN(1)= 5 V,
IC = 7 A, Tj = 125 °C
-
Collector-cut off current
(VIN(1) = 0 “logic state”)
VCE = 550 V
VCC = Vboot = 15 V
-
150
µA
Diode forward voltage
(VIN(1) = 0 “logic state”),
IC = 7 A
-
2.1
V
Collector-emitter
saturation voltage
V
1.8
Inductive load switching time and energy
ton
tc(on)
toff
tc(off)
trr
Turn-on time
-
270
-
Crossover time (on)
-
130
-
-
520
-
-
140
-
-
130
-
Turn-off time
Crossover time (off)
Reverse recovery time
VDD = 300 V,
VCC = Vboot = 15 V,
VIN(1)= 0 ÷ 5 V
IC = 7 A (see Figure 4)
Eon
Turn-on switching losses
-
150
-
Eoff
Turn-off switching losses
-
110
-
ns
µJ
1. Applied between HINi, LINi and GND for i = U, V, W.
Note:
tON and tOFF include the propagation delay time of the internal drive. tC(ON) and tC(OFF) are
the switching time of IGBT itself under the internally given gate driving condition.
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Electrical characteristics
STGIPS14K60T-H
Figure 3. Switching time test circuit
AM06019v2
Figure 4. Switching time definition
100% IC 100% IC
t rr
IC
VCE
VCE
IC
VIN
VIN
t ON
t OFF
t C(OFF)
t C(ON)
VIN(ON)
10% IC 90% IC 10% VCE
(a) turn-on
Note:
8/19
VIN(OFF)
10% VCE
(b) turn-off
Figure 4 "Switching time definition" refers to HIN, LIN inputs (active high).
DocID024476 Rev 3
10% IC
AM09223V1
STGIPS14K60T-H
3.1
Electrical characteristics
Control part
Table 8. Low voltage power supply (VCC = 15 V unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Vcc UV hysteresis
1.2
1.5
1.8
V
Vcc_thON
Vcc UV turn ON threshold
11.5
12
12.5
V
Vcc_thOFF
Vcc UV turn OFF threshold
10
10.5
11
V
Vcc_hys
Parameter
Test conditions
Iqccu
Undervoltage quiescent
supply current
VCC = 10 V
SD = 5 V; LIN = 0 V;
HIN = 0
450
µA
Iqcc
Quiescent current
Vcc = 15 V
SD = 5 V; LIN = 0 V
HIN = 0
3.5
mA
Table 9. Bootstrapped voltage (VCC = 15 V unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
VBS UV hysteresis
1.2
1.5
1.8
V
VBS_thON
VBS UV turn ON threshold
11.1
11.5
12.1
V
VBS_thOFF
VBS UV turn OFF threshold
9.8
10
10.6
V
IQBSU
Undervoltage VBS quiescent
current
VBS = 9 V
SD = 5 V; LIN = 0
HIN = 5 V
70
110
µA
IQBS
VBS quiescent current
VBS = 15 V
SD = 5 V; LIN = 0
HIN = 5 V
200
300
µA
Bootstrap driver on resistance
LVG ON
120
VBS_hys
RDS(on)
Parameter
Test conditions
Ω
Table 10. Logic inputs (VCC = 15 V unless otherwise specified)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Vil
Low logic level voltage
0.8
1.1
V
Vih
High logic level voltage
1.9
2.25
V
100
µA
1
µA
100
µA
1
µA
300
µA
3
µA
IHINh
HIN logic “1” input bias current
HIN = 15 V
IHINl
HIN logic “0” input bias current
HIN = 0 V
ILINh
LIN logic “1” input bias current
LIN = 15 V
ILINl
LIN logic “0” input bias current
LIN = 0 V
ISDh
SD logic “0” input bias current
SD = 15 V
ISDl
SD logic “1” input bias current
SD = 0 V
Dt
Dead time
see Figure 9
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20
30
40
40
120
600
ns
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Electrical characteristics
STGIPS14K60T-H
Table 11. Shut down characteristics (VCC = 15 V unless otherwise specified)
Symbol
Parameter
Test conditions
Shut down to high / low side
driver propagation delay
tsd
VOUT = 0, Vboot = VCC,
VIN = 0 to 3.3 V
Min.
Typ.
Max.
Unit
50
125
200
ns
Table 12. Truth table
Logic input (VI)
Output
Condition
SD
LIN
HIN
LVG
HVG
Shutdown enable
half-bridge tri-state
L
X
X
L
L
Interlocking
half-bridge tri-state
H
H
H
L
L
0 ‘’logic state”
half-bridge tri-state
H
L
L
L
L
1 “logic state”
low side direct driving
H
H
L
H
L
1 “logic state”
high side direct driving
H
L
H
L
H
Note:
X: don’t care
Figure 5. Maximum IC(RMS) current vs. switching
frequency (1)
AM03801v2
Ic(RMS) [A]
Figure 6. Maximum IC(RMS) current vs. fSINE (1)
18
11
16
10
TC = 80°C
14
AM03802v2
Ic(RMS) [A]
VPN = 300 V, Modulation index = 0.8,
PF = 0.6, T j = 150 °C, fSINE = 60 Hz
VPN = 300 V, Modulation index = 0.8,
PF = 0.6, Tj = 150 °C, Tc = 100 °C
9
8
12
fsw = 12 kHz
TC = 100°C
10
fsw = 16 kHz
7
fsw = 20 kHz
8
4
6
8
10
12
14
16
18
fsw [kHz]
1. Simulated curves refer to typical IGBT parameters and maximum RthJC.
10/19
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6
1
10
f SINE [Hz]
STGIPS14K60T-H
3.1.1
Electrical characteristics
NTC thermistor
Table 13. NTC thermistor
Symbol
Parameter
Test conditions
Min.
Typ. Max. Unit.
R25
Resistance
T = 25°C
4.7
kΩ
R125
Resistance
T = 125°C
160
Ω
B
B-constant
T = 25°C to 85°C
3950
K
T
Operating temperature
-40
150
°C
Equation 1: resistance variation vs. temperature
R ( T ) = R 25 ⋅ e
1
1
B --- – ----------
T 298
Where T are temperatures in Kelvins
Figure 7. NTC resistance vs. temperature
AM16299v1
NTC [kΩ]
180
160
140
120
100
MAX.
80
60
CENTER
40
20
MIN.
0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 (°C)
Figure 8. NTC resistance vs. temperature (zoom)
AM17098v1
NTC [kΩ ]
1.800
1.600
1.400
1.200
MAX.
1.000
0.800
CENTER
0.600
0.400
MIN.
0.200
0.000
50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130 135 140 145 (°C)
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Electrical characteristics
3.2
STGIPS14K60T-H
Waveform definitions
12/19
DocID024476 Rev 3
G
CKIN
INTE
RLO
INTE
RLO
CKIN
G
Figure 9. Dead time and interlocking waveform definitions
STGIPS14K60T-H
4
Applications information
Applications information
Figure 10. Typical application circuit
AM09321v2
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Applications information
4.1
STGIPS14K60T-H
Recommendations
•
Input signals HIN, LIN are active high logic. A 375 kΩ (typ.) pull down resistor is built-in
for each input. If an external RC filter is used, for noise immunity, pay attention to the
variation of the input signal level.
•
To prevent the input signals oscillation, the wiring of each input should be as short as
possible.
•
By integrating an application specific type HVIC inside the module, direct coupling to
MCU terminals without any opto-coupler is possible.
•
Each capacitor should be located as nearby the pins of IPM as possible.
•
Low inductance shunt resistors should be used for phase leg current sensing.
•
Electrolytic bus capacitors should be mounted as close to the module bus terminals as
possible. Additional high frequency ceramic capacitor mounted close to the module
pins will further improve performance.
•
The SD signal should be pulled up to 5 V / 3.3 V with an external resistor.
Table 14. Recommended operating conditions
Value
Symbol
Parameter
Conditions
Unit
Min.
VPN
Supply voltage
Applied between P-Nu, Nv, Nw
VCC
Control supply voltage
Applied between VCC-GND
VBS
High side bias voltage
Applied between VBOOTi-OUTi for
i = U, V, W
13
tdead
Blanking time to
prevent arm-short
For each input signal
1
fPWM
Pwm input signal
-40°C < Tc < 100°C
-40°C < Tj < 125°C
TC
Case operation
temperature
For further details refer to AN3338.
14/19
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13.5
Typ.
Max.
300
400
V
15
18
V
18
V
µs
20
kHz
100
°C
STGIPS14K60T-H
5
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Please refer to dedicated technical note TN0107 for mounting instructions.
5.1
SDIP-25L package information
Figure 11. SDIP-25L package outline
B
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Package information
STGIPS14K60T-H
Table 15. SDIP-25L mechanical data
mm
Dim.
16/19
Min.
Typ.
Max.
A
43.90
44.40
44.90
A1
1.15
1.35
1.55
A2
1.40
1.60
1.80
A3
38.90
39.40
39.90
B
21.50
22.00
22.50
B1
11.25
11.85
12.45
B2
24.83
25.23
25.63
C
5.00
5.40
6.00
C1
6.50
7.00
7.50
C2
11.20
11.70
12.20
C3
2.90
3.00
3.10
e
2.15
2.35
2.55
e1
3.40
3.60
3.80
e2
4.50
4.70
4.90
e3
6.30
6.50
6.70
D
33.30
D1
5.55
E
11.20
E1
1.40
F
0.85
1.00
1.15
F1
0.35
0.50
0.65
R
1.55
1.75
1.95
T
0.45
0.55
0.65
V
0°
6°
DocID024476 Rev 3
STGIPS14K60T-H
Packing information
8123127_E
AM10488v1
Figure 12. SDIP-25L packing information
Base quantity: 11 pcs
Bulk quantity: 132 pcs
5.2
Package information
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Revision history
6
STGIPS14K60T-H
Revision history
Table 16. Document revision history
18/19
Date
Revision
Changes
08-Apr-2013
1
Initial release.
15-Apr-2014
2
Document status promoted from preliminary to production data.
Updated Figure 2: Pin layout (bottom view).
15-Apr-2015
3
Text edits and formatting changes throughout document
Updated Figure 2: Pin layout (bottom view)
Updated Section 5: Package information
DocID024476 Rev 3
STGIPS14K60T-H
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