STGP10NB60SFP

STGP10NB60SFP 16 A, 600 V, low drop IGBT Features ■ Low on-voltage drop (VCE(sat)) ■ High current capability ) s ( ct Applications ■ du Light dimmer ■ Static relays ■ Motor drive 3 o r P 1 2 TO-220FP e t e ol Description This IGBT utilizes the advanced PowerMESH™ process featuring extremely low on-state voltage drop in low-frequency working conditions (up to 1 kHz). ) (s s b O Figure 1. Internal schematic diagram t c u d o r P e t e l o s b O Table 1. Device summary Order codes Marking Package Packaging STGP10NB60SFP GP10NB60SFP TO-220-FP Tube October 2011 Doc ID 022312 Rev 1 1/12 www.st.com 12 Electrical ratings 1 STGP10NB60SFP Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit VCES Collector-emitter voltage (VGE = 0) 600 V IC(1) Continuous collector current at TC = 25 °C 23 A IC(1) Continuous collector current at TC = 100 °C 12 A ICL (2) Turn-off latching current 20 (3) Pulsed collector current 80 ICP 1. Parameter VGE Gate-emitter voltage VISO Isolation withstand voltage (RMS) from all three leads to external hea sink (t=1 s; TC = 25 °C) PTOT Total dissipation at TC = 25 °C Tj Operating junction temperature ±20 e t e ol s b O Calculated according to the iterative formula ) (s c u d ) s ( t o r P A A V 2500 V 25 W – 55 to 150 °C T j ( max ) – T C I C ( T C ) = ------------------------------------------------------------------------------------------------------R thj – c × V CE ( sat ) ( max ) ( T j ( max ), I C ( T C ) ) t c u 2. Vclamp = 80% of VCES, Tj =150 °C, RG=1kΩ, VGE=15 V 3. Pulse width limited by maximum junction temperature and turn-off within RBSOA P e Table 3. let Symbol so b O 2/12 d o r Thermal data Parameter Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient Doc ID 022312 Rev 1 Value Unit 5 °C/W 62.5 °C/W STGP10NB60SFP 2 Electrical characteristics Electrical characteristics (Tj =25 °C unless otherwise specified) Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES Collector-emitter breakdown IC= 250 µA voltage (VGE= 0) 600 V V(BR)ECS Emitter-collector breakdown IC= 1 mA voltage (VGE= 0) 20 V IGES Gate-emitter leakage current (VCE = 0) VGE= ±20 V ICES Collector cut-off current (VGE = 0) VCE= 600 V VCE= 600 V, Tj= 125 °C VGE(th) Gate threshold voltage VCE= VGE, IC= 250 µA VCE(sat) Collector-emitter saturation voltage VGE= 15 V, IC= 5 A VGE= 15 V, IC= 10 A VGE= 15 V, IC= 10 A, Tj= 125 °C gfs (1) Forward transconductance ) (s b O u d o r P e nA 10 100 µA µA 5 V 2.5 let so ) s ( ct ±100 1.15 1.35 1.75 V 1.25 VCE = 15 V , IC = 10 A 5 S 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% t c u d o r Table 5. Symbol Dynamic Test conditions Min. Typ. Max. Unit Input capacitance Output capacitance Reverse transfer capacitance VCE = 25 V, f = 1 MHz, VGE= 0 - 610 65 12 - pF pF pF Total gate charge VCE = 400 V, IC = 10 A, VGE = 15 V (see Figure 17) - 33 - nC P e t e l o Cies Coes s b O Cres Qg Parameter Doc ID 022312 Rev 1 3/12 Electrical characteristics Table 6. STGP10NB60SFP Switching on/off (inductive load) Symbol Parameter td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope tr(Voff) td(off) tf tr(Voff) td(off) tf Table 7. Min. Typ. VCC = 480 V, IC = 10 A RG= 1 kΩ, VGE= 15 V (see Figure 16) - 0.7 0.46 8 - µs µs A/µs Off voltage rise time Turn-off delay time Current fall time VCC = 480 V, IC = 10 A RG= 1 kΩ, VGE= 15 V (see Figure 16) - 2.2 1.2 1.2 - µs Off voltage rise time Turn-off delay time Current fall time VCC = 480 V, IC = 10 A RG= 1 kΩ, VGE= 15 V, Tj= 125 °C (see Figure 16) - 3.8 1.2 1.9 Switching energy (inductive load) Symbol Eon (1) (2) Eoff Ets Eoff (2) Test conditions Parameter Turn-on switching losses Turn-off switching losses Total switching losses )- Turn-off switching losses s ( t c t e l o VCC = 480 V, IC = 10 A RG= 1 kΩ, VGE= 15 V (see Figure 16) VCC = 480 V, IC = 10 A RG= 1 kΩ, VGE= 15 V, Tj= 125 °C (see Figure 16) s b O (s) - µs t c u d o r P e Test conditions Max. Unit Min. Typ. Max. Unit - 0.6 5 5.6 - µJ µJ µJ - 8 - µJ 1. Eon is the turn-on losses when a typical diode is used in the test circuit. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the same temperature (25°C and 125°C). u d o r P e 2. Turn-off losses include also the tail of the collector current. t e l o s b O 4/12 Doc ID 022312 Rev 1 STGP10NB60SFP Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Output characteristics Figure 3. Transfer characteristics ) s ( ct Figure 4. Transconductance Figure 5. u d o r P e Collector-emitter on voltage vs temperature t e l o ) (s s b O t c u d o r t e l o P e Figure 6. s b O Collector-emitter on voltage vs collector current Figure 7. Doc ID 022312 Rev 1 Normalized gate threshold vs temperature 5/12 Electrical characteristics Figure 8. STGP10NB60SFP Normalized breakdown voltage vs temperature Figure 9. Gate charge vs gate-emitter voltage ) s ( ct u d o r P e Figure 10. Capacitance variations Figure 11. Switching losses vs temperature t e l o ) (s s b O t c u d o r P e t e l o Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector current s b O 6/12 Doc ID 022312 Rev 1 STGP10NB60SFP Electrical characteristics Figure 14. Thermal impedance Figure 15. Turn-off SOA ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Doc ID 022312 Rev 1 7/12 Test circuits 3 STGP10NB60SFP Test circuits Figure 16. Test circuit for inductive load switching Figure 17. Gate charge test circuit ) s ( ct u d o r P e Figure 18. Switching waveforms t e l o ) (s s b O t c u d o r P e t e l o s b O 8/12 Doc ID 022312 Rev 1 STGP10NB60SFP 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Doc ID 022312 Rev 1 9/12 Package mechanical data Table 8. STGP10NB60SFP TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 G1 2.4 H 10 ) s ( ct du 5.2 e t e ol L2 16 L3 28.6 L4 9.8 L5 2.9 L6 15.9 L7 9 )- o r P 2.7 10.4 30.6 s b O 10.6 3.6 16.4 9.3 s ( t c Dia 3 u d o 3.2 Figure 19. TO-220FP drawing e t e ol Pr L7 E A B s b O D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_K 10/12 Doc ID 022312 Rev 1 STGP10NB60SFP 5 Revision history Revision history Table 9. Document revision history Date Revision 03-Oct-2011 1 Changes New release. ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Doc ID 022312 Rev 1 11/12 STGP10NB60SFP ) s ( ct Please Read Carefully: u d o Information in this document is provided solely in connection with ST products. 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