STGP12NB60HD

STGP12NB60HD N-CHANNEL 18A - 600V TO-220 PowerMESH™ IGBT TYPE VCES STGP12NB60HD ■ ■ ■ ■ ■ ■ ■ VCE(sat) IC (Max) @25°C @ 100°C < 2.8 V 18 A 600 V HIGH INPUT IMPEDANCE LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION CO-PACKAGED WITH TURBOSWITCHT ANTIPARALLEL DIODE 3 1 2 TO-220 DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized for high frequency applications (up to 50kHz)in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop. c u d ) s t( o r P INTERNAL SCHEMATIC DIAGRAM e t le o s b O - APPLICATIONS HIGH FREQUENCY MOTOR CONTROLS ■ SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES ■ UPS ) s ( ct ■ u d o r P e t e l o s b O ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STGP12NB60HD GP12NB60HD TO-220 TUBE October 2003 1/9 STGP12NB60HD ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR Emitter-Collector Voltage 20 V VGE Gate-Emitter Voltage ± 20 V IC Collector Current (continuous) at TC = 25°C (#) 30 A IC Collector Current (continuous) at TC = 100°C (#) 18 A Collector Current (pulsed) 60 A Total Dissipation at TC = 25°C 125 W Derating Factor 1.0 W/°C –65 to 150 °C 150 °C ICM (
) PTOT Tstg Tj Storage Temperature Max. Operating Junction Temperature (
) Pulse width limited by safe operating area THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.0 Rthj-amb Thermal Resistance Junction-ambient Max 62.5 ) s t( °C/W d o r uc °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Parameter Collector-Emitter Breakdown Voltage IC = 250 µA, VGE = 0 Collector cut-off (VGE = 0) VCE = Max Rating, TC = 25 °C 50 µA VCE = Max Rating, TC = 125 °C 100 µA VGE = ± 20V , VCE = 0 ±100 nA Max. Unit 5 V 2.8 V ICES Gate-Emitter Leakage Current (VCE = 0) Test Conditions P e let Symbol VBR(CES) IGES ) s ( ct ON (1) Symbol Parameter u d o VGE(th) Gate Threshold Voltage VCE(sat) Collector-Emitter Saturation Voltage DYNAMIC t e l o Symbol gfs s b O Cies 2/9 r P e Parameter Forward Transconductance Input Capacitance Min. Typ. Test Conditions Min. Typ. 3 VGE = 15V, IC = 12 A 2.0 VGE = 15V, IC = 12 A, Tj =125°C 1.7 Test Conditions Min. VCE = 15 V , IC = 12 A VCE = 25V, f = 1 MHz, VGE = 0 Unit V o s b O - VCE = VGE, IC = 250 µA Max. 600 Typ. V Max. Unit 10 S 920 pF Coes Output Capacitance 120 pF Cres Reverse Transfer Capacitance 27 pF Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 480V, IC = 12 A, VGE = 15V 68 10 30 nC nC nC ICL Latching Current Vclamp = 480 V , Tj = 150°C RG = 10 Ω 48 A STGP12NB60HD ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr (di/dt)on Eon Parameter Test Conditions Min. Typ. Max. Unit Turn-on Delay Time Rise Time VCC = 480 V, IC = 12 A RG = 10Ω , VGE = 15 V 5 46 ns ns Turn-on Current Slope Turn-on Switching Losses VCC= 480 V, IC = 12 A RG=10Ω, VGE = 15 V, Tj =125°C 700 290 A/µs µJ SWITCHING OFF Symbol tc Parameter Test Conditions tc ns ns Delay Time 91 ns Fall Time 100 ns Turn-off Switching Loss 0.21 Total Switching Loss 0.49 Vcc = 480 V, IC = 12 A, RGE = 10 Ω , VGE = 15 V Tj = 125 °C Cross-over Time tr(Voff) Off Voltage Rise Time td(off) Delay Time tf Ets e t le Turn-off Switching Loss Total Switching Loss COLLECTOR-EMITTER DIODE Symbol Parameter Ifm Vf Forward On-Voltage trr Qrr Irrm (s) t c u od Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current r P e o s b O - Test Conditions Forward Current Forward Current pulsed If uc Min. mJ ns od ns 76 Pr ) s t( mJ 230 Fall Time Eoff(**) Unit 27 td(off) Ets Max. 150 Off Voltage Rise Time Eoff(**) Typ. Vcc = 480 V, IC = 12A, RGE = 10 Ω , VGE = 15 V Cross-over Time tr(Voff) tf Min. 95 ns 200 ns 0.45 mJ 0.74 mJ Typ. If = 6 A If = 6 A, Tj = 125 °C 1.3 1.1 If = 6 A ,VR = 50 V, Tj = 125°C, di/dt = 100 A/µs 80 240 5.5 Max. Unit 12 48 A A 1.9 V V ns nC A t e l o Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization) s b O (#) Calculated according to the iterative formula: T J MAX – T C IC ( T C ) = -------------------------------------------------------------------------------------R THJ – C × V CESAT ( MAX )(T C, IC) 3/9 STGP12NB60HD Output Characteristics Transfer Characteristics Transconductance Collector-Emitter On Voltage vs Temperature c u d e t le ) s ( ct u d o r P e o s b O - Collector-Emitter On Voltage vs Collettor Current t e l o s b O 4/9 o r P Gate Threshold vs Temperature ) s t( STGP12NB60HD Normalized Breakdown Voltage vs Temperature Capacitance Variations Gate Charge vs Gate-Emitter Voltage Total Switching Losses vs Gate Resistance c u d e t le ) s ( ct u d o Total Switching Losses vs Temperature r P e ) s t( o r P o s b O - Total Switching Losses vs Collector Current t e l o s b O 5/9 STGP12NB60HD Switching Off Safe Operating Area Diode Forward Voltage Thermal Impedance c u d e t le ) s ( ct u d o r P e t e l o s b O 6/9 o s b O - o r P ) s t( STGP12NB60HD Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o s b O 7/9 STGP12NB60HD TO-220 MECHANICAL DATA mm. DIM. MIN. TYP TYP. MAX. 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 øP 3.75 3.85 0.147 Q 2.65 2.95 0.104 u d o r P e t e l o 8/9 MIN. A ) s ( ct s b O inch MAX. o s b O - P e let ro c u d ) s t( 0.151 0.116 STGP12NB60HD c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics s b O © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 9/9