STGP12NB60K

STGP12NB60K N-CHANNEL 18A - 600V TO-220 SHORT CIRCUIT PROOF PowerMESH™ IGBT TYPE VCES STGP12NB60K ■ ■ ■ ■ ■ ■ ■ 600 V VCE(sat) IC(#) (Max) @25°C @ 100°C < 2.8 V 18 A HIGH INPUT IMPEDANCE LOW ON-LOSSES LOW GATE CHARGE HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT VERY HIGH FREQUENCY OPERATION TYPICAL SHORT CIRCUIT WITHSTAND TIME 10 MICROS DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency applications (up to 50kHz) and short circuit proof in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop. ) s ( ct APPLICATIONS ■ HIGH FREQUENCY MOTOR CONTROLS ■ SMPS ■ UPS 3 1 2 TO-220 c u d ) s t( o r P INTERNAL SCHEMATIC DIAGRAM e t le o s b O - u d o r P e t e l o s b O ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STGP12NB60K GP12NB60K TO-220 TUBE December 2003 1/9 STGP12NB60K ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR Emitter-Collector Voltage 20 V VGE Gate-Emitter Voltage ± 20 V IC Collector Current (continuous) at TC = 25°C (#) 30 A IC Collector Current (continuous) at TC = 100°C (#) 18 A Collector Current (pulsed) 60 A µs ICM (
) Tsc PTOT Tstg Tj Short Circuit Withstand 10 Total Dissipation at TC = 25°C 125 W Derating Factor 1.0 W/°C –65 to 150 °C 150 °C Storage Temperature Max. Operating Junction Temperature (
) Pulse width limited by safe operating area THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.0 Rthj-amb Thermal Resistance Junction-ambient Max 62.5 r P e t le uc od ) s t( °C/W °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions VBR(CES) Collector-Emitter Breakdown Voltage IC = 250 µA, VGE = 0 ICES Collector cut-off (VGE = 0) VCE = Max Rating, TC = 25 °C VCE = Max Rating, TC = 125 °C 50 100 µA µA IGES Gate-Emitter Leakage Current (VCE = 0) VGE = ± 20V , VCE = 0 ±100 nA Typ. Max. Unit 7 V 2.2 1.7 2.8 V V Typ. Max. Unit ) s ( ct ON (1) Symbol Parameter du o s b O - Test Conditions VGE(th) Gate Threshold Voltage VCE = VGE, IC = 250 µA VCE(sat) Collector-Emitter Saturation Voltage VGE = 15V, IC = 12 A VGE = 15V, IC = 12 A, Tj =125°C t e l o DYNAMIC Symbol s b O gfs Cies Coes Cres Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions Typ. Max. 600 Min. V 5 Min. VCE = 25 V , IC = 12 A VCE = 25V, f = 1 MHz, VGE = 0 Unit 5 S 890 110 22 pF pF pF Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 480V, IC = 12 A, VGE = 15V 54 8 31 nC nC nC ICL Latching Current Vclamp = 480 V , VGE =15V, Tj = 125°C , RG = 10 Ω 48 A Short Circuit WITHSTAND Time VCE = 0.5 BVces , VGE = 15 V Tj = 125°C , RG = 10 Ω Twsc 2/9 o r P e Min. 10 µs STGP12NB60K ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) Parameter Test Conditions tr (di/dt)on Eon Min. Rise Time VCC = 480 V, IC = 12 A RG = 10Ω , VGE = 15 V Turn-on Current Slope Turn-on Switching Losses VCC= 480 V, IC = 12 A RG=10Ω VGE = 15 V,Tj = 125°C Turn-on Delay Time Typ. Max. Unit 25 ns 14.5 ns 590 A/µs 180 µJ SWITCHING OFF Symbol tc Parameter Test Conditions Min. Typ. Vcc = 480 V, IC = 12 A, RGE = 10 Ω , VGE = 15 V Cross-over Time Max. Unit 130 ns 25 ns tr(Voff) Off Voltage Rise Time td(off) Delay Time 96 ns Fall Time 100 Turn-off Switching Loss 258 Total Switching Loss 410 ) s t( tf Eoff(**) Ets tc Vcc = 480 V, IC = 12 A, RGE = 10 Ω , VGE = 15 V Tj = 125 °C Cross-over Time tr(Voff) Off Voltage Rise Time td(off) Delay Time tf Eoff(**) Ets Turn-off Switching Loss so Total Switching Loss Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization) ) s ( ct (#) Calculated according to the iterative formula: T JMAX – T C I C ( T C ) = -------------------------------------------------------------------------------------R THJ – C × VCESAT ( MAX )(T C, I C) µJ uc µJ d o r ns 150 ns 220 ns 650 µJ 830 µJ P e let Fall Time 310 ns 80 ns b O - u d o r P e t e l o s b O 3/9 STGP12NB60K Transfer Characteristics Output Characteristics Transconductance c u d e t le ) s ( ct u d o r P e s b O 4/9 o r P o s b O - Collector-Emitter On Voltage vs Temperature t e l o ) s t( Normalized Collector-Emitter On Voltage vs Temp. Collector-Emitter On Voltage vs Collector Current STGP12NB60K Normalized Breakdown Voltage vs Temperature Gate Threshold vs Temperature Capacitance Variations ) s t( Gate Charge vs Gate-Emitter Voltage c u d e t le ) s ( ct u d o Total Switching Losses vs Gate Resistance r P e o r P o s b O - Total Switching Losses vs Temperature t e l o s b O 5/9 STGP12NB60K Total Switching Losses vs Collector Current Turn-Off SOA Thermal Impedance c u d e t le ) s ( ct u d o r P e t e l o s b O 6/9 o s b O - o r P ) s t( STGP12NB60K Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o s b O 7/9 STGP12NB60K TO-220 MECHANICAL DATA mm. DIM. MIN. TYP inch MAX. MIN. 4.60 0.173 4.40 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 0.181 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 16.40 0.645 L30 28.90 1.137 øP 3.75 3.85 0.147 Q 2.65 2.95 0.104 u d o r P e t e l o o s b O - c u d ) s t( 0.154 L20 ) s ( ct 8/9 MAX. A e t le s b O TYP. o r P 0.151 0.116 STGP12NB60K c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics s b O © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 9/9