STGP12NB60KD

STGP12NB60KD - STGB12NB60KD N-CHANNEL 18A - 600V TO-220/D2PAK SHORT CIRCUIT PROOF PowerMESH™ IGBT TYPE STGP12NB60KD STGB12NB60KD ■ ■ ■ ■ ■ ■ ■ ■ VCES 600 V 600 V VCE(sat) IC(#) (Max) @25°C @ 100°C < 2.8 V < 2.8 V 18 A 18 A HIGH INPUT IMPEDANCE LOW ON-LOSSES LOW GATE CHARGE HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT VERY HIGH FREQUENCY OPERATION TYPICAL SHORT CIRCUIT WITHSTAND TIME 10 MICROS 3 1 TO-220 2 3 1 D2PAK CO-PACKAGED ANTIPARALLEL DIODE DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency applications (up to 50kHz) and short circuit proof in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH FREQUENCY MOTOR CONTROLS ■ SMPS ■ UPS ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STGP12NB60KD GP12NB60KD TO-220 TUBE STGB12NB60KDT4 GB12NB60KD D2PAK TAPE & REEL December 2003 1/11 STGP12NB60KD - STGB12NB60KD ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR Emitter-Collector Voltage 20 V VGE Gate-Emitter Voltage ± 20 V IC Collector Current (continuous) at TC = 25°C (#) 30 A IC Collector Current (continuous) at TC = 100°C (#) 18 A Collector Current (pulsed) 60 A µs ICM (
) Tsc PTOT Tstg Tj Short Circuit Withstand 10 Total Dissipation at TC = 25°C 125 W Derating Factor 1.0 W/°C –65 to 150 °C 150 °C Storage Temperature Max. Operating Junction Temperature (
) Pulse width limited by safe operating area THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.0 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Min. Typ. Max. VBR(CES) Collector-Emitter Breakdown Voltage IC = 250 µA, VGE = 0 ICES Collector cut-off (VGE = 0) VCE = Max Rating, TC = 25 °C VCE = Max Rating, TC = 125 °C 50 100 µA µA IGES Gate-Emitter Leakage Current (VCE = 0) VGE = ± 20V , VCE = 0 ±100 nA Typ. Max. Unit 7 V 2.2 1.7 2.8 V V Typ. Max. Unit 600 Unit V ON (1) Symbol Parameter Test Conditions VGE(th) Gate Threshold Voltage VCE = VGE, IC = 250 µA VCE(sat) Collector-Emitter Saturation Voltage VGE = 15V, IC = 12 A VGE = 15V, IC = 12 A, Tj =125°C Min. 5 DYNAMIC Symbol gfs Parameter Forward Transconductance Test Conditions Min. VCE = 25 V , IC = 12 A VCE = 25V, f = 1 MHz, VGE = 0 5 S 890 110 22 pF pF pF Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 480V, IC = 12 A, VGE = 15V 54 8 31 nC nC nC ICL Latching Current Vclamp = 480 V , VGE =15V, Tj = 125°C , RG = 10 Ω 48 A Short Circuit WITHSTAND Time VCE = 0.5 BVces , VGE = 15 V Tj = 125°C , RG = 10 Ω Twsc 2/11 10 µs STGP12NB60KD - STGB12NB60KD ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr (di/dt)on Eon Parameter Test Conditions Rise Time VCC = 480 V, IC = 12 A RG = 10Ω , VGE = 15 V Turn-on Current Slope Turn-on Switching Losses VCC= 480 V, IC = 12 A RG=10Ω VGE = 15 V,Tj = 125°C Turn-on Delay Time Min. Typ. Max. Unit 25 ns 14.5 ns 590 A/µs 180 µJ SWITCHING OFF Symbol tc Parameter Cross-over Time Test Conditions Min. Vcc = 480 V, IC = 12 A, RGE = 10 Ω , VGE = 15 V Typ. Max. Unit 130 ns 25 ns tr(Voff) Off Voltage Rise Time td(off) Delay Time 96 ns Fall Time 100 ns Turn-off Switching Loss 258 µJ Total Switching Loss 410 µJ 310 ns tf Eoff(**) Ets tc Cross-over Time Vcc = 480 V, IC = 12 A, RGE = 10 Ω , VGE = 15 V Tj = 125 °C tr(Voff) Off Voltage Rise Time 80 ns td(off) Delay Time 150 ns Fall Time 220 ns Turn-off Switching Loss 650 µJ Total Switching Loss 830 µJ tf Eoff(**) Ets Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization) COLLECTOR-EMITTER DIODE Symbol Parameter Test Conditions Min. Typ. Ifm Forward Current Forward Current pulsed Vf Forward On-Voltage If = 6 A If = 6 A, Tj = 125 °C 1.3 1.1 trr Qrr Irrm Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If = 6 A ,VR = 50 V, Tj =125°C, di/dt = 100 A/µs 80 240 5.5 If Max. Unit 12 48 A A 1.9 V V ns nC A (#) Calculated according to the iterative formula: T JMAX – T C IC ( T C ) = -------------------------------------------------------------------------------------R THJ – C × V CESAT ( MAX )(T C, I C) 3/11 STGP12NB60KD - STGB12NB60KD Output Characteristics Transfer Characteristics Transconductance Normalized Collector-Emitter On Voltage vs Temp. Collector-Emitter On Voltage vs Temperature Collector-Emitter On Voltage vs Collector Current 4/11 STGP12NB60KD - STGB12NB60KD Gate Threshold vs Temperature Normalized Breakdown Voltage vs Temperature Capacitance Variations Gate Charge vs Gate-Emitter Voltage Total Switching Losses vs Gate Resistance Total Switching Losses vs Temperature 5/11 STGP12NB60KD - STGB12NB60KD Total Switching Losses vs Collector Current Diode Forward Voltage Turn-Off SOA Thermal Impedance 6/11 STGP12NB60KD - STGB12NB60KD Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching 7/11 STGP12NB60KD - STGB12NB60KD TO-220 MECHANICAL DATA DIM. 8/11 mm. MIN. TYP inch MAX. MIN. 4.60 0.173 TYP. MAX. A 4.40 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 L30 28.90 0.645 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STGP12NB60KD - STGB12NB60KD D2PAK MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 0.315 10 E1 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.015 0º 8º 3 V2 0.4 9/11 1 STGP12NB60KD - STGB12NB60KD D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 10/11 0.075 0.082 0.933 0.956 MAX. MIN. 330 B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA inch MAX. 12.992 0.059 13.2 0.504 0.520 26.4 0.960 1.039 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STGP12NB60KD - STGB12NB60KD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 11/11