STGP19NC60S

STGB19NC60S STGP19NC60S 20 A, 600 V fast IGBT Features ■ Very low on-voltage drop (VCE(sat)) ■ Minimum power losses at 5 kHz in hard switching ■ TAB c u d Optimized performance for medium operating frequencies. o r P 3 Application 1 e t le TO-220 Medium frequency motor drives Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. ) s t( TAB 2 3 1 D2PAK o s b O ) Figure 1. Internal schematic diagram s ( t c u d o r P e t e l o s b O Table 1. Device summary Order codes Marking Package Packaging STGB19NC60ST4 GB19NC60S D2PAK Tape and reel STGP19NC60S GP19NC60S TO-220 Tube November 2010 Doc ID 13688 Rev 5 1/15 www.st.com 15 Contents STGB19NC60S, STGP19NC60S Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 2.2 Frequency applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 ) s t( 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 c u d e t le o s b O ) s ( t c u d o r P e t e l o s b O 2/15 Doc ID 13688 Rev 5 o r P STGB19NC60S, STGP19NC60S 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGE = 0) 600 V IC(1) Continuous collector current at TC = 25°C 40 A IC(1) Continuous collector current at TC = 100°C 20 A ICP (2) Pulsed collector current 80 ICL (3) Turn-off latching current 80 VGE Gate-emitter voltage ±20 PTOT Total dissipation at TC = 25°C Tj A uc od e t e Operating junction temperature Pr ) s t( A V 130 W - 55 to 150 °C l o s 1. Calculated according to the iterative formula T j ( max ) – T C I C ( T C ) = --------------------------------------------------------------------------------------------------------R thj – c × V CE ( sat ) ( max ) ( T j ( max ), I C ( T C ) ) b O - 2. Pulse width limited by maximum junction temperature and turn-off within RBSOA ) s ( ct 3. Vclamp = 80% of VCES, Tj =150 °C, RG=10 Ω, VGE=15 V Table 3. u d o Thermal data Pr Symbol Parameter Value Unit Rthj-c Thermal resistance junction-case 0.96 °C/W Rthj -a Thermal resistance junction-ambient 62.5 °C/W e t e ol s b O Doc ID 13688 Rev 5 3/15 Electrical characteristics 2 STGB19NC60S, STGP19NC60S Electrical characteristics (Tj = 25°C unless otherwise specified) Table 4. Static Symbol Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE= 0) Collector-emitter saturation VGE= 15V, IC= 12A voltage VGE= 15V, IC=12A,Tj =125°C VGE(th) Gate threshold voltage VCE= VGE, IC= 250 µA ICES Collector cut-off current (VGE = 0) VCE= 600 V IGES Gate-emitter leakage current (VCE = 0) VGE= ±20V, VCE= 0 Forward transconductance VCE = 15V, IC= 12A Table 5. Symbol Cies Coes Cres Ob 4/15 Parameter let du Input capacitance Output capacitance Reverse transfer capacitance ro P e Qg Qge Qgc ) s ( ct Dynamic Max. 4.2 VCE = 25V, f = 1MHz, Min. Typ. Figure 18 Doc ID 13688 Rev 5 6.2 V 150 1 µA mA ±100 nA S Max. Unit - 1190 135 28.5 - pF pF pF - 54.5 8.7 25.8 - nC nC nC VCE = 480V, IC = 12A, VGE = 15V, V V 10 b O - Test conditions ) s ( 1.9 t c u d o r l o s Unit V 1.55 1.35 P e et VCE= 600 V, Tj =125°C VGE = 0 Total gate charge Gate-emitter charge Gate-collector charge Typ. 600 VCE(sat) gfs so IC= 1mA Min. STGB19NC60S, STGP19NC60S Table 6. Switching on/off (inductive load) Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) Parameter tf tr(Voff) Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope tf Eon e t e l Eoff(1) o s b Ets Max. Unit - 17.5 6.2 1870 - ns ns A/µs RG= 10Ω, VGE= 15V, - 17 6.5 1700 - ns ns A/µs - 90 175 215 Figure 19 VCC = 480V, IC = 12A RG= 10Ω, VGE= 15V, Tj = 125°C VCC = 480V, IC = 12A RG= 10Ω, VGE= 15V, Figure 19 VCC = 480V, IC = 12A Tj = 125°C - ns ns ns - 155 245 290 - ns ns ns Min. Typ. Max. Unit - 135 815 995 - µJ µJ µJ - 200 1175 1375 - µJ µJ µJ l o s b O - uc d o r P e et RG= 10Ω, VGE= 15V, ) s t( Switching energy (inductive load) ) s ( ct Symbol Ets Typ. VCC = 480V, IC = 12A Figure 19 Table 7. Min. Figure 19 Off voltage rise time Turn-off delay time Current fall time td(Voff) Eoff(1) Test conditions Off voltage rise time Turn-off delay time Current fall time td(Voff) Eon Electrical characteristics Parameter Turn-on switching losses Turn-off switching losses Total switching losses Pr u d o Turn-on switching losses Turn-off switching losses Total switching losses Test conditions VCC = 480V, IC = 12A RG= 10Ω, VGE= 15V, Figure 17 VCC = 480V, IC = 12A RG= 10Ω, VGE= 15V, Tj = 125°C Figure 17 1. Turn-off losses include also the tail of the collector current O Doc ID 13688 Rev 5 5/15 Electrical characteristics STGB19NC60S, STGP19NC60S 2.1 Electrical characteristics (curves) Figure 2. Output characteristics Figure 3. Transfer characteristics ) s t( c u d Figure 4. Transconductance e t le Figure 5. o s b o r P Collector-emitter on voltage vs temperature O ) s ( t c u d o r P e t e l o s b O Figure 6. 6/15 Gate charge vs gate-source voltage Figure 7. Doc ID 13688 Rev 5 Capacitance variations STGB19NC60S, STGP19NC60S Figure 8. Electrical characteristics Normalized gate threshold voltage vs temperature Figure 9. Collector-emitter on voltage vs collector current ) s t( Figure 10. Normalized breakdown voltage vs temperature c u d o r P Figure 11. Switching losses vs temperature e t le o s b O ) s ( t c u d o r P e t e l o Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector current s b O Doc ID 13688 Rev 5 7/15 Electrical characteristics STGB19NC60S, STGP19NC60S Figure 14. Turn-off SOA Figure 15. Thermal impedance ) s t( c u d Figure 16. IC vs. frequency e t le o s b O ) s ( t c u d o r P e t e l o s b O 8/15 Doc ID 13688 Rev 5 o r P STGB19NC60S, STGP19NC60S 2.2 Electrical characteristics Frequency applications For a fast IGBT suitable for high frequency applications, the typical collector current vs. maximum operating frequency curve is reported. That frequency is defined as follows: fMAX = (PD - PC) / (EON + EOFF) ● The maximum power dissipation is limited by maximum junction to case thermal resistance: Equation 1 PD = ΔT / RTHJ-C considering ΔT = TJ - TC = 125 °C- 75 °C = 50°C ● ) s t( The conduction losses are: c u d Equation 2 PC = IC * VCE(SAT) * δ with 50% of duty cycle, VCESAT typical value @125°C. ● e t le o r P Power dissipation during ON & OFF commutations is due to the switching frequency: o s b Equation 3 PSW = (EON + EOFF) * freq. O ) Typical values @ 125°C for switching losses are used (test conditions: VCE = 480V, VGE=15V, RG = 10 Ohm). Furthermore, diode recovery energy is included in the EON (see Note 1), while the tail of the collector current is included in the EOFF measurements. s ( t c u d o r P e t e l o s b O Doc ID 13688 Rev 5 9/15 Test circuits 3 STGB19NC60S, STGP19NC60S Test circuits Figure 17. Test circuit for inductive load switching Figure 18. Gate charge test circuit ) s t( c u d AM01504v1 e t le Figure 19. Switching waveform o s b O ) 90% 10% VG VCE s ( t c Tr(Voff) Tcross IC u d o Td(off) Td(on) Tr(Ion) r P e Ton t e l o 90% 10% 90% 10% Tf Toff AM01506v1 s b O 10/15 Doc ID 13688 Rev 5 o r P AM01505v1 STGB19NC60S, STGP19NC60S 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. ) s t( c u d e t le o r P o s b O ) s ( t c u d o r P e t e l o s b O Doc ID 13688 Rev 5 11/15 Package mechanical data STGB19NC60S, STGP19NC60S D²PAK (TO-263) mechanical data mm. Dim. Min. A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 Typ. Max. 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 4.60 0.23 0.93 1.70 0.60 1.36 9.35 d o r 2.54 ) (s uc 10.40 4.88 15 2.49 2.29 1.27 1.30 P e et l o s Ob 0° ) s t( 5.28 15.85 2.69 2.79 1.40 1.75 0.4 8° t c u d o r P e t e l o s b O 0079457_P 12/15 Doc ID 13688 Rev 5 STGB19NC60S, STGP19NC60S Package mechanical data TO-220 type A mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ Max 4.40 0.61 1.14 0.48 15.25 4.60 0.88 1.70 0.70 15.75 ) s t( 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 c u d e t le o s b O ) 3.75 2.65 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 o r P 16.40 28.90 3.85 2.95 s ( t c u d o r P e t e l o s b O 0015988_Rev_S Doc ID 13688 Rev 5 13/15 Revision history 5 STGB19NC60S, STGP19NC60S Revision history Table 8. Document revision history Date Revision Changes 02-Jul-2007 1 First release 13-Aug-2007 2 From target to preliminary version 18-Sep-2007 3 Added new section: Electrical characteristics (curves) 18-Aug-2009 4 Inserted D2PAK package 08-Nov-2010 5 Modified gate threshold voltage range on Table 4: Static c u d ) s t( e t le o s b O ) s ( t c u d o r P e t e l o s b O 14/15 Doc ID 13688 Rev 5 o r P STGB19NC60S, STGP19NC60S ) s t( Please Read Carefully: c u d Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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