STGP30H65F

STGP30H65F Trench gate field-stop IGBT, H series 650 V, 30 A high speed Datasheet - production data Features • High speed switching • Tight parameters distribution TAB • Safe paralleling • Low thermal resistance • Short-circuit rated 3 1 2 Applications TO-220 • Inverter • UPS • PFC Figure 1. Internal schematic diagram Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operation. C (2, TAB) G (1) E (3) Table 1. Device summary Order codes Marking Package Packaging STGP30H65F GP30H65F TO-220 Tube December 2013 This is information on a product in full production. DocID025631 Rev 1 1/13 www.st.com 13 Contents STGP30H65F Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 ............................................... 9 DocID025631 Rev 1 STGP30H65F 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0) 650 V IC Continuous collector current at TC = 25 °C 60 A IC Continuous collector current at TC = 100 °C 30 A Pulsed collector current 120 A VGE Gate-emitter voltage ±20 V PTOT Total dissipation at TC = 25 °C 260 W TSTG Storage temperature range - 55 to 150 Operating junction temperature - 55 to 175 VCES ICP (1) Parameter °C TJ 1. Pulse width limited by maximum junction temperature. Table 3. Thermal data Symbol Parameter RthJC Thermal resistance junction-case RthJA Thermal resistance junction-ambient DocID025631 Rev 1 Value Unit 0.58 °C/W 50 °C/W 3/13 Electrical characteristics 2 STGP30H65F Electrical characteristics TJ = 25 °C unless otherwise specified. Table 4. Static Symbol V(BR)CES VCE(sat) VGE(th) Parameter Test condition Collector-emitter breakdown voltage IC = 2 mA (VGE = 0) Collector-emitter saturation voltage Min. Typ. 650 2.0 VGE = 15 V, IC = 30 A TJ = 175 °C 2.4 VCE = VGE, IC = 1 mA ICES Collector cut-off current (VGE = 0) IGES Gate-emitter leakage current (VCE = 0) 5.0 Unit V VGE = 15 V, IC = 30 A Gate threshold voltage Max. 6.0 2.4 V V 7.0 V VCE = 650 V 25 μA VGE = ± 20 V 250 nA Max. Unit Table 5. Dynamic Symbol Cies 4/13 Parameter Test condition Min. Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge Typ. 3600 VCE = 25 V, f = 1 MHz, VGE = 0 - 130 pF - 65 VCC = 400 V, IC = 30 A, VGE = 15 V (see Figure 20: Gate charge test circuit) DocID025631 Rev 1 pF pF - 105 - nC - 30 - nC - 35 - nC STGP30H65F Electrical characteristics Table 6. Switching on/off (inductive load) Symbol td(on) tr Parameter td(on) tr tr(Voff) td(off) tf - Turn-on current slope Turn-on delay time Turn-on current slope VCE = 400 V, IC = 30 A, RG = 10 Ω, VGE = 15 V TJ = 175 °C - Off voltage rise time Turn-off delay time VCE = 400 V, IC = 30 A, RG = 10 Ω, VGE = 15 V - Current fall time tr(Voff) Off voltage rise time td(off) Turn-off delay time Typ. Max. 50 VCE = 400 V, IC = 30 A, RG = 10 Ω, VGE = 15 V Current rise time (di/dt)on Min. Turn-on delay time Current rise time (di/dt)on Test condition tf Current fall time VCE = 400 V, IC = 30 A, RG = 10 Ω, VGE = 15 V TJ = 175 °C tsc Short circuit withstand time VCC ≤ 360 V, VGE = 15 V 15 Unit ns - ns 1600 A/μs 47 ns 17 - ns 1400 A/μs 20 ns 160 - ns 60 ns 22 ns 146 - ns - 3 6 - μs Min. Typ. Max. Unit - 0.35 - mJ - 0.40 - mJ - 0.75 - mJ - 0.61 - mJ - 0.84 - mJ - 1.45 - mJ 88 ns Table 7. Switching energy (inductive load) Symbol Eon (1) Eoff (2) Ets Eon (1) Eoff (2) Ets Parameter Test condition Turn-on switching losses Turn-off switching losses VCE = 400 V, IC = 30 A, RG = 10 Ω, VGE = 15 V Total switching losses Turn-on switching losses Turn-off switching losses Total switching losses VCE = 400 V, IC = 30 A, RG = 10 Ω, VGE = 15 V TJ = 175 °C 1. Energy losses include reverse recovery of the external diode. The diode is the same of the co-packed STGP30H60DF. 2. Turn-off losses include also the tail of the collector current. DocID025631 Rev 1 5/13 Electrical characteristics 2.1 STGP30H65F Electrical characteristics (curves) Figure 2. Output characteristics (TJ = 25°C) AM17360v1 IC (A) VGE=15V 11V Figure 3. Output characteristics (TJ = 175°C) AM17361v1 IC (A) VGE=15V 100 11V 80 80 13V 60 60 40 40 100 13V 9V 9V 20 0 0 1 2 3 4 100 1 2 4 3 VCE(V) Figure 5. Normalized VGE(th) vs. junction temperature AM17362v1 TJ=-40°C AM17369v1 VGE(th) norm TJ=175°C VCE=5V 7V 0 0 VCE(V) Figure 4. Transfer characteristics IC (A) 20 1.0 TJ=25°C 80 0.9 60 0.8 40 0.7 20 0 7 8 9 10 11 Figure 6. Power dissipation vs. case temperature AM17364v1 PTOT (W) 0.6 -50 VGE(V) 240 0 50 100 150 TJ(°C) Figure 7. Collector current vs. frequency AM17380v1 IC (A) 60 Tc=80°C 200 50 160 Tc=100°C 120 40 80 30 40 0 0 6/13 rectangular current shape, (duty cycle=0.5, Vcc= 400V Rg=10ohm,Vge=0/15V, Tj=175 °C) 25 50 75 100 125 150 TCASE(°C) 20 1 DocID025631 Rev 1 10 f(kHz) STGP30H65F Electrical characteristics Figure 8. VCE(sat) vs. junction temperature Figure 9. VCE(sat) vs. collector current AM17366v1 VCE(sat) (V) AM17367v1 VCE(sat) (V) VGE=15V VGE=15V 3.2 3.0 2.8 3.0 2.8 2.6 2.4 2.2 2.0 1.8 IC=60A 2.6 2.4 2.2 IC=30A 2.0 1.8 1.4 1.2 -50 TJ=25°C 1.6 1.4 IC=15A 1.6 TJ=175°C 0 50 100 TJ=-40°C 1.2 1. 10 150 TJ(°C) Figure 10. Forward bias safe operating area 20 40 30 50 Figure 11. Thermal impedance AM17370v1 IC (A) IC(A) ZthTO2T_B K δ0 lim it δ0.01 δ0.02 1µs at) 100 δ0.05 E(s δ0.1 VC δ0.2 10 -1 δ0.5 Zth=k Rthj-c δ=tp/t 10 100µs (single pulse TC=25°C, TJ15V TJ