STGP3NB60K

STGP3NB60K STGD3NB60K N-CHANNEL 6A - 600V - TO-220 / DPAK SHORT CIRCUIT PROOF PowerMESH™ IGBT TYPE STGP3NB60K STGD3NB60K ■ ■ ■ ■ ■ ■ ■ VCES VCE(sat) (Max) @ 25°C IC(#) @100°C 600 V 600 V < 2.8 V < 2.8 V 6A 6A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW GATE CHARGE HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT HIGH FREQUENCY OPERATION SHORT CIRCUIT RATED 1 1 DPAK TO-220 c u d DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with short circuit withstand capability. ) s ( ct 3 3 2 ) s t( o r P INTERNAL SCHEMATIC DIAGRAM e t le o s b O - APPLICATIONS ■ HIGH FREQUENCY MOTOR CONTROLS ■ SMPS AND PFC IN BOTH HARD SWITCHING AND RESONANT TOPOLOGIES u d o r P e t e l o s b O ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STGP3NB60K GP3NB60K TO-220 TUBE STGD3NB60KT4 GD3NB60K DPAK TAPE & REEL March 2004 1/11 STGP3NB60K - STGD3NB60K ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR Emitter-Collector Voltage 20 V VGE Gate-Emitter Voltage ±20 V IC Collector Current (continuous) at TC = 25°C (#) 10 A IC Collector Current (continuous) at TC = 100°C (#) 6 A 24 A ICM (
) PTOT Tstg Collector Current (pulsed) Total Dissipation at TC = 25°C 50 W Derating Factor 0.4 W/°C – 55 to 150 °C 150 °C Storage Temperature Tj Max. Operating Junction Temperature (
) Pulse width limited by safe operating area c u d THERMAL DATA TO-220 Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max DPAK o r P 2.5 62.5 e t le o s b O - ) s t( 100 °C/W °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) MAIN PARAMETERS Symbol VBR(CES) Parameter Max. Unit V Gate-Emitter Leakage Current (VCE = 0) VGE = ±20V , VCE = 0 ±100 nA Gate Threshold Voltage VCE = VGE, IC = 250µA 7 V 2.8 V V u d o r P e t e l o 2/11 Typ. 600 µA µA IGES s b O Min. 50 500 Collector cut-off (VGE = 0) VCE(sat) ct (s) IC = 250 µA, VGE = 0 VCE = Max Rating, TC = 25 °C VCE = Max Rating, TC = 125 °C ICES VGE(th) Test Conditions Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage VGE = 15V, IC = 3 A VGE = 15V, IC = 3 A, Tj =125°C 5 2.3 1.9 STGP3NB60K - STGD3NB60K SWITCHING PARAMETERS Symbol gfs Parameter Test Conditions Min. VCE = 25V, Ic = 3 A Forward Transconductance Typ. Max. Unit 2.4 S 220 50 5.8 pF pF pF Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 480V, IC = 3 A, VGE = 15V tscw Short Circuit Withstand Time Vce = 0.5 VBR(CES), VGE=15V, Tj = 125°C , RG = 10 Ω td(on) tr Turn-on Delay Time Rise Time VCC = 480 V, IC = 3 A RG = 10Ω, VGE = 15 V 14 5 ns ns (di/dt)on Eon Turn-on Current Slope Turn-on Switching Losses VCC= 480 V, IC = 3 A RG=10Ω VGE = 15 V,Tj = 125°C 520 30 A/µs µJ tc tr(Voff) td(off) tf Eoff(**) Ets Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Total Switching Loss Vcc = 480 V, IC = 3 A, RGE = 10 Ω , VGE = 15 V Tj = 25 °C 90 20 33 100 58 85 ) s t( tc tr(Voff) td(off) tf Eoff(**) Ets Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Total Switching Loss Vcc = 480 V, IC = 3 A, RGE = 10 Ω , VGE = 15 V Tj = 125 °C VCE = 25V, f = 1 MHz, VGE = 0 Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization) ) s ( ct (#) Calculated according to the iterative formula: 14 3.3 7.5 18 10 o s b O - e t le nC nC nC µs o r P c u d 190 54 90 130 111 195 ns ns ns ns µJ µJ ns ns ns ns µJ µJ u d o T JMAX – T C I C ( T C ) = -------------------------------------------------------------------------------------R THJ – C × VCESAT ( MAX )(T C, IC) r P e t e l o s b O 3/11 STGP3NB60K - STGD3NB60K Output Characteristics Transfer Characteristics Transconductance Normalized Collector-Emitter On Voltage vs Temp. c u d e t le ) s ( ct u d o o s b O - Collector-Emitter On Voltage vs Collector Current r P e t e l o s b O 4/11 o r P Gate Threshold vs Temperature ) s t( STGP3NB60K - STGD3NB60K Normalized Breakdown Voltage vs Temperature Capacitance Variations Gate Charge vs Gate-Emitter Voltage Total Switching Losses vs Gate Resistance c u d e t le ) s ( ct u d o Total Switching Losses vs Temperature r P e ) s t( o r P o s b O - Turn-Off SOA t e l o s b O 5/11 STGP3NB60K - STGD3NB60K Thermal Impedance for TO-220 Thermal Impedance for DPAK c u d e t le ) s ( ct u d o r P e t e l o s b O 6/11 o s b O - o r P ) s t( STGP3NB60K - STGD3NB60K Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o s b O 7/11 STGP3NB60K - STGD3NB60K TO-220 MECHANICAL DATA mm. DIM. MIN. TYP TYP. MAX. 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 øP 3.75 3.85 0.147 Q 2.65 2.95 0.104 u d o r P e t e l o 8/11 MIN. A ) s ( ct s b O inch MAX. o s b O - P e let ro c u d ) s t( 0.151 0.116 STGP3NB60K - STGD3NB60K TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 G 4.40 4.60 0.173 H 9.35 10.10 0.368 L2 L4 V2 0.60 0 8 ) s ( ct 0.181 ro 0.398 0.031 1.00 o 0.260 P e let 0.8 c u d ) s t( 0.024 o 0 o 0.039 0o o s b O - u d o r P e t e l o s b O P032P_B 9/11 STGP3NB60K - STGD3NB60K TUBE SHIPMENT (no suffix)* DPAK FOOTPRINT All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* c u d ) s t( REEL MECHANICAL DATA DIM. mm ro MIN. P e let A so ) s ( ct TAPE MECHANICAL DATA mm DIM. MIN. A0 6.8 B0 10.4 D D1 s b O E 1.5 MAX. 7 0.267 0.275 10.6 0.409 0.417 12.1 0.476 1.6 0.059 0.063 1.5 1.65 u d o MIN. r P e t e l o B1 inch MAX. 0.059 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 16.3 1.574 0.618 R 40 W 15.7 * on sales type 10/11 0.641 b O - B 1.5 C 12.8 D 20.2 G 16.4 N 50 inch T MAX. MIN. 330 13.2 MAX. 12.992 0.059 0.504 0.520 0.795 18.4 0.645 0.724 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STGP3NB60K - STGD3NB60K c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners s b O © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 11/11