STGP7NB60KD

STGP7NB60KD - STGB7NB60KD STGP7NB60KDFP N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH™ IGBT TYPE VCES VCE(sat) IC STGP7NB60KD STGP7NB60KDFP STGB7NB60KD 600 V 600 V 600 V < 2.8 V < 2.8 V < 2.8 V 7A 7A 7A ■ ■ ■ ■ ■ ■ ■ ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW GATE CHARGE HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT HIGH FREQUENCY OPERATION SHORT CIRCUIT RATED CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODE 3 1 3 2 1 TO-220 2 TO-220FP 3 1 D²PAK INTERNAL SCHEMATIC DIAGRAM DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with short circuit withstand capability. APPLICATIONS ■ HIGH FREQUENCY MOTOR CONTROLS ■ SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES ORDER CODES PART NUMBER MARKING PACKAGE PACKAGING STGP7NB60KD GP7NB60KD TO-220 TUBE STGB7NB60KDT4 GB7NB60KD D2PAK TAPE & REEL STGP7NB60KDFP GP7NB60KDFP TO-220FP TUBE May 2004 1/12 STGP7NB60KD - STGP7NB60KDFP - STGB7NB60KD ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STGP7NB60KD STGP7NB60KDFP STGB7NB60KD VCES Collector-Emitter Voltage (VGS = 0) VECR VGE 600 V Emitter-Collector Voltage 20 V Gate-Emitter Voltage ±20 V IC Collector Current (continuous) at TC = 25°C 14 A IC Collector Current (continuous) at TC = 100°C 7 A Collector Current (pulsed) 56 A ICM (
) PTOT Total Dissipation at TC = 25°C Derating Factor VISO Insulation Withstand Voltage A.C.(t= 1 sec; Tc= 25°C) Tstg Storage Temperature Tj 80 25 W 0.64 0.20 W/°C -- 2500 V Max. Operating Junction Temperature –55 to 150 °C 150 °C (
) Pulse width limited by safe operating area THERMAL DATA TO-220 D2PAK Rthj-case Thermal Resistance Junction-case Max Rthj-amb TO-220FP 1.56 Thermal Resistance Junction-ambient Max 5 °C/W 62.5 °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Min. Typ. Max. VBR(CES) Collector-Emitter Breakdown Voltage IC= 250 µA, VGE= 0 ICES Collector cut-off (VGE = 0) VCE= Max Rating, TC= 25°C VCE= Max Rating, TC= 125°C 500 µA IGES Gate-Emitter Leakage Current (VCE = 0) VGE= ±20V, VCE= 0 ±100 nA Max. Unit 7 V 2.8 V 600 Unit V 50 µA ON (1) Symbol Parameter Test Conditions Min. Typ. VGE(th) Gate Threshold Voltage VCE = VGE, IC = 250µA VCE(sat) Collector-Emitter Saturation Voltage VGE = 15V, IC = 7 A 2.3 VGE= 15V, IC= 7 A, Tj= 125°C 1.9 2/12 5 V STGP7NB60KD - STGP7NB60KDFP - STGB7NB60KD ELECTRICAL CHARACTERISTICS (CONTINUED) DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit Forward Transconductance VCE = 15 V , IC =7 A 3.7 S Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE= 25V, f= 1 MHz, VGE= 0 495 77 13 pF pF pF Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 480V, IC = 7 A, VGE = 15V 32.7 5.9 18.3 tscw Short Circuit Withstand Time Vce= 0.5 VBR(CES), VGE= 15 V Tj= 125°C , RG= 10 Ω 10 Test Conditions Min. gfs 45 nC nC nC µs SWITCHING ON Symbol td(on) tr (di/dt)on Eon Parameter Rise Time VCC = 480 V, IC = 7 A RG = 10Ω, VGE = 15 V Turn-on Current Slope Turn-on Switching Losses VCC= 480 V, IC = 7 A, RG= 10Ω VGE= 15 V,Tj = 125°C Turn-on Delay Time Typ. Max. Unit 15 ns 6 ns 980 95 A/µs µJ SWITCHING OFF Symbol tc Parameter Cross-over Time 50 ns Fall Time 100 ns Turn-off Switching Loss 140 µJ Total Switching Loss 200 µJ 227 ns 68 ns 52 ns Cross-over Time tr(Voff) Off Voltage Rise Time td(off) Delay Time tf Eoff(**) Ets Unit ns Delay Time tc Max. 30 td(off) Ets Typ. ns Off Voltage Rise Time tf Min. 105 tr(Voff) Eoff(**) Test Conditions Vcc = 480 V, IC = 7 A, RGE = 10 Ω , VGE = 15 V Vcc = 480 V, IC = 7 A, RGE = 10 Ω , VGE = 15 V Tj = 125 °C Fall Time 150 ns Turn-off Switching Loss 300 µJ Total Switching Loss 395 µJ (**) Losses include Also the Tail (Jedec Standardization) COLLECTOR-EMITTER DIODE Symbol Parameter Test Conditions Min. Typ. If Ifm Forward Current Forward Current pulsed Vf Forward On-Voltage If = 3.5 A If = 3.5 A, Tj = 125 °C 1.4 1.2 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If = 7 A ,VR = 35 V, Tj =125°C, di/dt = 100 A/µs 50 70 2.7 trr Qrr Irrm Max. Unit 7 56 A A 1.9 V V ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization) 3/12 STGP7NB60KD - STGP7NB60KDFP - STGB7NB60KD Output Characteristics Transconductance Collector-Emitter On Voltage vs Collector Current 4/12 Transfer Characteristics Normalized Collector-Emitter On Voltage Gate Threshold vs Temperature STGP7NB60KD - STGP7NB60KDFP - STGB7NB60KD Normalized Breakdown Voltage vs Temperature Capacitance Variations Gate Charge vs Gate-Emitter Voltage Total Switching Losses vs Gate Resistance Total Switching Losses vs Temperature Total Switching Losses vs Collector Current 5/12 STGP7NB60KD - STGP7NB60KDFP - STGB7NB60KD Thermal Impedance for TO-220/D2PAK Turn-Off SOA 6/12 Thermal Impedance for TO-220FP STGP7NB60KD - STGP7NB60KDFP - STGB7NB60KD Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching 7/12 STGP7NB60KD - STGP7NB60KDFP - STGB7NB60KD TO-220 MECHANICAL DATA DIM. 8/12 mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 L30 28.90 0.645 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STGP7NB60KD - STGP7NB60KDFP - STGB7NB60KD TO-220FP MECHANICAL DATA mm. DIM. MIN. inch TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L5 L3 L6 F2 H G G1 F F1 L7 L2 L5 1 2 3 L4 9/12 STGP7NB60KD - STGP7NB60KDFP - STGB7NB60KD D2PAK MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 0.315 10 E1 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.015 0º 8º 3 V2 0.4 10/12 1 STGP7NB60KD - STGP7NB60KDFP - STGB7NB60KD D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 MAX. MIN. 330 B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA inch MAX. 12.992 0.059 13.2 0.504 0.520 26.4 0.960 1.039 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 11/12 STGP7NB60KD - STGP7NB60KDFP - STGB7NB60KD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 12/12