STGW20H60DF

STGW20H60DF, STGWT20H60DF 600 V, 20 A high speed trench gate field-stop IGBT Datasheet - production data Features • High speed switching TAB • Tight parameters distribution • Safe paralleling • Low thermal resistance 3 3 2 2 1 1 TO-247 TO-3P • Short-circuit rated • Ultrafast soft recovery antiparallel diode Applications • Motor control • UPS, PFC Figure 1. Internal schematic diagram Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operation. C (2, TAB) G (1) E (3) Table 1. Device summary Order codes Marking Packages Packaging STGW20H60DF GW20H60DF TO-247 Tube STGWT20H60DF GWT20H60DF TO-3P Tube June 2013 This is information on a product in full production. DocID024745 Rev 1 1/17 www.st.com 17 Contents STGW20H60DF, STGWT20H60DF Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 DocID024745 Rev 1 STGW20H60DF, STGWT20H60DF 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0) 600 V Continuous collector current at TC = 25 °C 40 A Continuous collector current at TC = 100 °C 20 A Pulsed collector current 80 A Gate-emitter voltage ±20 V Continuous forward current TC = 25 °C 40 Continuous forward current at TC = 100 °C 20 IFP(2) Pulsed forward current 80 A PTOT Total dissipation at TC = 25 °C 167 W TSTG Storage temperature range - 55 to 150 Operating junction temperature - 55 to 175 VCES Parameter IC ICP (1) VGE IF A °C TJ 1. Limited by maximum junction temperature. 2. Pulse width limited by maximum junction temperature and turn-off within RBSOA. Table 3. Thermal data Symbol Parameter Value Unit RthJC Thermal resistance junction-case IGBT 0.9 °C/W RthJC Thermal resistance junction-case diode 2.5 °C/W RthJA Thermal resistance junction-ambient 62.5 °C/W DocID024745 Rev 1 3/17 Electrical characteristics 2 STGW20H60DF, STGWT20H60DF Electrical characteristics TJ = 25 °C unless otherwise specified. Table 4. Static Symbol Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA Min. Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current (VGE = 0) IGES Gate-emitter leakage current (VCE = 0) Unit V 1.6 VGE = 15 V, IC = 20 A Collector-emitter saturation TJ = 125 °C voltage VGE = 15 V, IC = 20 A TJ = 175 °C VGE(th) Max. 600 VGE = 15 V, IC = 20 A VCE(sat) Typ. 2.0 1.75 V 1.8 5 6 7 V VCE = 600 V 25 μA VGE = ± 20 V 250 nA Table 5. Dynamic Symbol 4/17 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 VCC = 400 V, IC = 20 A, VGE = 15 V Qge Gate-emitter charge Qgc Gate-collector charge DocID024745 Rev 1 Min. Typ. Max. Unit - 2750 - pF - 110 - pF - 65 - pF - 115 - nC - 22 - nC - 45 - nC STGW20H60DF, STGWT20H60DF Electrical characteristics Table 6. Switching characteristics (inductive load) Symbol td(on) Parameter Test conditions Turn-on delay time VCE = 400 V, IC = 20 A, RG = 10 Ω, VGE = 15 V Current rise time tr (di/dt)on td(on) tr Turn-on current slope Turn-on delay time Current rise time (di/dt)on tr(Voff) td(off) tf Min. Turn-on current slope VCE = 400 V, IC = 20 A, RG = 10 Ω, VGE = 15 V TJ = 175 °C Off voltage rise time Off voltage rise time td(off) Turn-off delay time tf Current fall time VCE = 400 V, IC = 20 A, RG = 10 Ω, VGE = 15 V TJ = 175 °C tsc Short-circuit withstand time VCC ≤ 360 V, VGE = 15 V Unit 42.5 - ns 11.9 - ns 1345 - A/μs 42.5 - ns 13.4 ns 1180 A/μs - ns 177 - ns 55 - ns 26 - ns 173 - ns 86 - ns 5 - μs Min. Typ. Max. Unit - 209 - μJ - 261 - μJ - 470 - μJ - 480 - μJ - 416 - μJ - 896 - μJ Current fall time tr(Voff) Max. 20 VCE = 400 V, IC = 20 A, RG = 10 Ω, VGE = 15 V Turn-off delay time Typ. 3 Table 7. Switching energy (inductive load) Symbol Eon (1) Eoff (2) Ets Test conditions Turn-on switching losses Turn-off switching losses Turn-on switching losses (2) Turn-off switching losses Ets VCE = 400 V, IC = 20 A, RG = 10 Ω, VGE = 15 V Total switching losses Eon (1) Eoff 1. Parameter Total switching losses VCE = 400 V, IC = 20 A, RG = 10 Ω, VGE = 15 V TJ = 175 °C Energy losses include reverse recovery of the diode. 2. Turn-off losses include also the tail of the collector current. DocID024745 Rev 1 5/17 Electrical characteristics STGW20H60DF, STGWT20H60DF Table 8. Collector-emitter diode Symbol 6/17 Parameter Test conditions VF Forward on-voltage IF = 20 A IF = 20 A, TJ = 175 °C trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current Min. Typ. Max. Unit 1.8 1.3 2.2 - V V - 90 - ns Vr = 60 V; IF = 20 A; diF/dt = 100 A / μs Vr = 60 V; IF = 20 A; diF/dt = 100 A / μs TJ = 175 °C DocID024745 Rev 1 110 nC 2.4 A - 180 - ns - 466 - nC - 5.2 - A STGW20H60DF, STGWT20H60DF 2.1 Electrical characteristics Electrical characteristics (curves) Figure 2. Output characteristics (TJ = 25°C) AM16287v1 IC (A) 11 V 100 AM16288v1 IC (A) 15 V 11 V 100 13 V 15 V 80 Figure 3. Output characteristics (TJ = 175°C) 80 60 13 V 60 9V 40 9V 40 20 20 0 0 1 3 2 4 0 VCE(V) 0 Figure 4. Transfer characteristics 1 3 2 4 VCE(V) Figure 5. Normalized VGE(th) vs junction temperature AM16289v1 IC (A) 7V -40 °C AM16292v1 VGE(th) (norm) 100 1 25 °C 80 175 °C 0.9 60 VCE= VGE IC = 1 mA VCE= 5 V 0.8 40 0.7 20 0 7 8 9 10 11 VGE(V) 0.6 -75 DocID024745 Rev 1 -25 25 75 125 TJ(°C) 7/17 Electrical characteristics STGW20H60DF, STGWT20H60DF Figure 6. Collector current vs. case temperature Figure 7. Collector current vs. frequency AM16282v1 IC (A) AM162981V1 IC (A) 40 60 32 50 Tc= 80°C Tc= 100°C 24 40 16 30 8 20 0 25 0 75 50 100 125 10 1 TC(°C) Figure 8. VCE(sat) vs. junction temperature AM16290V1 VCE(sat) (V) Rectangular current shape (duty cycle= 0.5, VCC= 400 V Rg = 10 Ω, VGE= 0/15V, TJ= 175°C 10 f(kHz) Figure 9. VCE(sat) vs. collector current AM16291V1 VCE(sat) (V) VGE= 15 V VGE= 15 V 2.3 TJ = 175 °C 2.2 2.1 TJ = 25 °C IC= 40 A 1.9 1.8 1.7 TJ = -40 °C IC= 20 A 1.4 1.5 IC= 10 A 1.3 -75 -25 25 75 125 TJ(°C) 1.0 0 Figure 10. Forward bias safe operating area 10 Figure 11. Thermal impedance AM16280V1 IC (A) IC(A) 30 20 ZthTO2T_B it K VCE (sa t) lim δ=0.5 0.2 10 0.1 100 µs 0.05 -1 10 0.02 1 ms 1 Zth=k Rthj-c δ=tp/τ 0.01 (single pulse TC=25°C, TJ