STGW20NB60KD

STGW20NB60KD N-CHANNEL 20A - 600V TO-247 SHORT CIRCUIT PROOF PowerMESH™ IGBT Figure 1: Package Table 1: General Features TYPE VCES VCE(sat) (Max) @25°C IC @100°C STGW20NB60KD 600 V < 2.8 V 25 A ■ ■ ■ ■ ■ ■ ■ ■ ■ OFF LOSSES INCLUDE TAIL CURRENT HIGH CURRENT CAPABILITY HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW ON-LOSSES LOW GATE CHARGE VERY HIGH FREQUENCY OPERATION SHORT CIRCUIT RATED LATCH CURRENT FREE OPERATION 3 2 1 c u d TO-247 o r P Weight: 4.41gr ± 0.01 Max Clip Pressure: 150 N/mm2 DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with short circuit withstand capability. ) s ( ct ) s t( e t le Figure 2: Internal Schematic Diagram o s b O - APPLICATIONS HIGH FREQUENCY MOTOR CONTROLS ■ U.P.S ■ WELDING EQUIPMENTS u d o ■ r P e t e l o Table 2: Order Codes s b O SALES TYPE MARKING PACKAGE PACKAGING STGW20NB60KD GW20NB60KD TO-247 TUBE Rev. 3 May 2005 1/11 STGW20NB60KD Table 3: Absolute Maximum ratings Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR Reverse Battery Protection 20 V VGE Gate-Emitter Voltage ± 20 V IC Collector Current (continuous) at 25°C (#) 50 A IC Collector Current (continuous) at 100°C (#) 25 A Collector Current (pulsed) 100 A ICM (1) TSC Short Circuit Withstand 10 µs PTOT Total Dissipation at TC = 25°C 170 W Derating Factor 1.2 W/°C – 55 to 150 °C Tstg Tj Storage Temperature Operating Junction Temperature (1)Pulse width limited by max. junction temperature. Table 4: Thermal Data Min. Typ. Rthj-case Thermal Resistance Junction-case -- -- Rthj-amb Thermal Resistance Junction-ambient -- P e let Electrical Characteristics (Tcase =25°C unless otherwise specified) Table 5: Off so Symbol Parameter VBR(CES) Collectro-Emitter Breakdown Voltage IC = 250 µA, VGE = 0 Collector-Emitter Leakage Current (VCE = 0) VGE = Max Rating Tc=25°C Tc=125°C Gate-Emitter Leakage Current (VCE = 0) VGE = ± 20 V , VCE = 0 ICES IGES ) s ( ct u d o Table 6: On r P e Symbol VGE(th) Test Conditions Parameter s b O Test Conditions VCE= VGE, IC= 250 µA Collector-Emitter Saturation Voltage VGE= 15 V, IC= 20A, Tj= 25°C VGE= 15 V, IC= 20A, Tj= 125°C (#) Calculated according to the iterative formula: T –T JMAX C I ( T ) = -------------------------------------------------------------------------------------------------C C R ×V (T , I ) THJ – C CESAT ( M AX ) C C 2/11 b O - Gate Threshold Voltage t e l o VCE(SAT) d o r Min. uc -- Typ. ) s t( Max. 0.73 °C/W 50 °C/W Max. Unit 600 Min. V 10 100 µA µA ± 100 nA Typ. Max. Unit 7 V 2.3 1.9 2.8 V V 5 STGW20NB60KD ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic Symbol Parameter Test Conditions Forward Transconductance VCE = 25 V, IC= 20 A Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qge Qgc tscw gfs Min. Typ. Max. Unit 8 S VCE = 25V, f = 1 MHz, VGE = 0 1560 190 38 pF pF pF Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 480 V, IC = 20 A, VGE = 15V, (see Figure 19) 85 14.4 51 Short Circuit Withstand Time Vce = 0.5 BVces , Tj = 125°C RG = 10 Ω, VGE= 15V 115 10 nC nC nC µs Table 8: Switching On Symbol td(on) tr (di/dt)on Eon (2) Parameter Test Conditions Min. Typ. Turn-on Delay Time Current Rise Time VCC = 480 V, IC = 20 A RG= 10Ω, VGE= 15V, Tj= 25°C (see Figure 17) 39 35 Turn-on Current Slope Turn-on Switching Losses VCC = 480 V, IC = 20 A RG= 10Ω, VGE= 15V, Tj= 125°C (see Figure 17) 453 675 ) s t( Max. c u d o r P Unit ns ns A/µs µJ 2) Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 17. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. Table 9: Switching Off Symbol tr(Voff) tc td(off) tf Eoff (3) Ets tr(Voff) tc Parameter Cross-over Time tf s b O Eoff (3) Ets ct Current Fall Time Turn-off Switching Loss u d o r P e Off Voltage Rise Time Cross-over Time t e l o td(off) (s) Turn-off Delay Time Total Switching Loss Turn-off Delay Time o s b O Test Conditions Vcc = 480 V, IC = 20 A, RGE = 10 Ω , VGE = 15 V TJ = 25 °C (see Figure 17) Off Voltage Rise Time e t le Vcc = 480 V, IC = 20 A, RGE = 10 Ω , VGE = 15 V Tj = 125 °C (see Figure 17) Min. Typ. Max. Unit 25 ns 160 ns 105 ns 95 ns 0.5 mJ 0.9 mJ 46 ns 175 ns 130 ns Current Fall Time 150 ns Turn-off Switching Loss 0.70 mJ Total Switching Loss 1.35 mJ (3)Turn-off losses include also the tail of the collector current. 3/11 STGW20NB60KD Table 10: Collector-Emitter Diode Symbol Parameter Test Conditions Min. Typ. If Ifm Forward Current Forward Current pulsed Vf Forward On-Voltage If = 10 A If = 10 A, Tj = 125 °C 1.27 1 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If = 10 A ,VR = 27 V, Tj =125°C, di/dt = 100 A/μs (see Figure 20) 80.5 181 4.5 trr Qrr Irrm Max. Unit 20 80 A A 2.0 V V c u d e t le ) s ( ct u d o r P e t e l o s b O 4/11 o s b O - o r P ns nC A ) s t( STGW20NB60KD Figure 3: Output Characteristics Figure 6: Transfer Characteristics Figure 4: Transconductance Figure 7: Collector-Emitter On Voltage vs Temperature c u d e t le ) s ( ct o r P o s b O - Figure 5: Collector-Emitter On Voltage vs Collector Current u d o ) s t( Figure 8: Normalized Gate Threshold vs Temperature r P e t e l o s b O 5/11 STGW20NB60KD Figure 9: Normalized Breakdown Voltage vs Temperature Figure 12: Gate Charge vs Gate-Emitter Voltage Figure 10: Capacitance Variations Figure 13: Diode Forward Voltage c u d e t le ) s ( ct r P e t e l o s b O 6/11 o r P o s b O - Figure 11: Turn-Off Energy Losses vs Temperature u d o ) s t( Figure 14: Total Switching Losses vs Collector Current STGW20NB60KD Figure 15: Thermal Impedance Figure 16: Turn-Off SOA c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o s b O 7/11 STGW20NB60KD Figure 17: Test Circuit for Inductive Load Switching Figure 19: Gate Charge Test Circuit Figure 18: Switching Waveforms Figure 20: Diode Recovery Times Waveform c u d e t le ) s ( ct u d o r P e t e l o s b O 8/11 o s b O - o r P ) s t( STGW20NB60KD TO-247 MECHANICAL DATA mm. DIM. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 0.134 b2 3.0 3.40 0.118 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 e 5.45 L 14.20 L1 3.70 L2 14.80 0.560 4.30 0.14 18.50 øP 3.55 3.65 0.140 4.50 5.50 0.177 ) s ( ct uc 0.17 r P e t le 5.50 ) s t( 0.582 0.728 øR S 0.620 0.214 od 0.143 0.216 0.216 o s b O - u d o r P e t e l o s b O 9/11 STGW20NB60KD Table 11: Revision History Date Revision 21-Mar-2005 05-Apr-2005 2 3 Description of Changes New stylesheet. Some value changed on Table 3 and 4 New updated values in table 3 c u d e t le ) s ( ct u d o r P e t e l o s b O 10/11 o s b O - o r P ) s t( STGW20NB60KD c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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