STGW30H65FB

STGFW30H65FB, STGW30H65FB Datasheet Trench gate field-stop 650 V, 30 A high speed HB series IGBT Features 1 1 2 3 1 TO-247 TO-3PF 2 • Maximum junction temperature: TJ = 175 °C • • • High speed switching series Minimized tail current VCE(sat) = 1.55 V (typ.) at IC = 30 A • • • Tight parameters distribution Safe paralleling Low thermal resistance 3 Applications C(2, TAB) • • • • G(1) Photovoltaic inverters Power factor correction Welding High-frequency converters Description E(3) G1C2TE3 These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status links STGFW30H65FB STGW30H65FB DS10155 - Rev 7 - March 2021 For further information contact your local STMicroelectronics sales office. www.st.com STGFW30H65FB, STGW30H65FB Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol VCES Value Parameter TO-247 TO-3PF Unit Collector-emitter voltage (VGE = 0 V) 650 V Continuous collector current at TC = 25 °C 60 A Continuous collector current at TC = 100 °C 30 A ICP Pulsed collector current 120 A VGE Gate-emitter voltage ±20 V PTOT Total power dissipation at TC = 25 °C VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; Tc = 25 °C) Tstg Storage temperature range -55 to 150 °C Operating junction temperature range -55 to 175 °C IC (1) TJ 260 92 W 3.5 kV 1. Pulse width is limited by maximum junction temperature. Table 2. Thermal data Symbol DS10155 - Rev 7 Parameter RthJC Thermal resistance, junction-to-case RthJA Thermal resistance, junction-to-ambient Value TO-247 TO-3PF 0.58 1.63 50 Unit °C/W °C/W page 2/18 STGFW30H65FB, STGW30H65FB Electrical characteristics 2 Electrical characteristics TJ = 25 °C unless otherwise specified Table 3. Static characteristics Symbol Parameter Test conditions V(BR)CES Collector-emitter breakdown voltage VCE(sat) Collector-emitter saturation voltage VGE = 0 V, IC = 2 mA Min. Typ. 650 1.55 VGE = 15 V, IC = 30 A, TJ = 125 °C 1.65 VGE = 15 V, IC = 30 A, TJ = 175 °C 1.75 Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current IGES Gate-emitter leakage current 5 Unit V VGE = 15 V, IC = 30 A VGE(th) Max. 6 2 V 7 V VGE = 0 V, VCE = 650 V 25 µA VCE = 0 V, VGE = ±20 V 250 nA Table 4. Dynamic characteristics Symbol Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg DS10155 - Rev 7 Parameter Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 V Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge VCC = 520 V, IC = 30 A, VGE = 0 to 15 V (see Figure 27. Gate charge test circuit) Min. Typ. Max. Unit - 3659 - pF - 101 - pF - 76 - pF - 149 - nC - 25 - nC - 62 - nC page 3/18 STGFW30H65FB, STGW30H65FB Electrical characteristics Table 5. Switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Parameter Min. Typ. Max. Unit Turn-on delay time - 37 - ns Current rise time - 14.6 - ns - 1643 - A/µs - 146 - ns - 23 - ns - 151 - µJ Turn-on current slope Turn-off delay time Current fall time Test conditions VCE = 400 V, IC = 30 A, RG = 10 Ω, VGE = 15 V (see Figure 26. Test circuit for inductive load switching) (1) Turn-on switching energy Eoff (2) Turn-off switching energy - 293 - µJ Total switching energy - 444 - µJ Turn-on delay time - 35 - ns Current rise time - 16.1 - ns - 1496 - A/µs - 158 - ns - 65 - ns - 175 - µJ Eon Ets td(on) tr (di/dt)on td(off) tf Turn-on current slope Turn-off-delay time Current fall time VCE = 400 V, IC = 30 A, RG = 10 Ω, VGE = 15 V, TJ = 175 °C (see Figure 26. Test circuit for inductive load switching) Eon (1) Turn-on switching energy Eoff (2) Turn-off switching energy - 572 - µJ Total switching energy - 747 - µJ Ets 1. Including the reverse recovery of the external SiC diode STPSC206W. 2. Including the tail of the collector current. DS10155 - Rev 7 page 4/18 STGFW30H65FB, STGW30H65FB Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Output characteristics (TJ = 25°C) IC (A) VGE =15 V VGE =13 V 100 Figure 2. Output characteristics (TJ = 175°C) IC (A) VGE =15 V VGE =13 V 100 GIPG280120141156FSR VGE =11 V 80 GIPG280120141206FSR VGE =11 V 80 60 60 VGE =9 V VGE =9 V 40 40 20 20 0 0 1 2 3 4 5 VGE =7 V VCE (V) Figure 3. Transfer characteristics IC (A) 100 GIPG280120141330FSR VCE = 6 V 0 0 VGE =7 V 1 2 3 4 5 VCE (V) Figure 4. Collector current vs case temperature for TO-247 GIPG280120141346FSR IC (A) 60 80 TJ = 175 °C 60 40 TJ = 25 °C 40 20 20 0 5 7 9 11 VGE (V) Figure 5. Collector current vs case temperature for TO-3PF IC (A) 30 GADG030320211407MT 0 VGE ≥ 15V, TJ ≤ 175 °C 0 25 50 75 100 125 150 175 TC (°C) Figure 6. VCE(sat) vs junction temperature GIPG280120141440FSR VCE(sat) (V) VGE = 15 V 2.2 VGE ≥ 15 V, TJ ≤ 175 °C IC = 60 A 2.0 1.8 20 IC = 30 A 1.6 10 1.4 IC = 15 A 0 25 DS10155 - Rev 7 75 125 175 TC (°C) 1.2 -50 0 50 100 150 TJ (°C) page 5/18 STGFW30H65FB, STGW30H65FB Electrical characteristics (curves) Figure 7. Power dissipation vs case temperature for TO-247 GIPG280120141353FSR Ptot (W) Figure 8. Power dissipation vs case temperature for TO-3PF PTOT (W) GADG030320211406MT 250 VGE ≥ 15 V, TJ ≤ 175 °C 90 200 150 60 100 30 50 VGE ≥ 15V, TJ ≤ 175 °C 0 0 25 75 100 125 150 175 TC (°C) 50 Figure 9. Forward bias safe operating area for TO-247 75 125 (A) 175 TC (°C) Figure 10. Forward bias safe operating area for TO-3PF IC (A) GIPG280120141450FSR IC 0 25 GADG040320210850SOA Vce(sat) limit 100 10 2 10 μs 10 tp =10 µs 10 1 100 μs tp =100 µs 1 ms 1 10 0 (single pulse Tc = 25 °C, TJ ≤ 175 °C, VGE = 15 V) 0.1 1 10 100 VCE (V) Figure 11. Collector current vs switching frequency for TO-247 IC (A) 80 GIPG280120141713FSR 10 2 TC = 100 °C Rectangular current shape (duty cycle = 0.5, VCC = 400 V, 0 RG = 10 Ω, VGE = 0/15 V , TJ = 175 °C 100 101 102 VCE (V) Figure 12. Collector current vs switching frequency for TO-3PF IC (A) GADG030320211409MT TC = 80 ºC 30 TC = 100 ºC 20 20 DS10155 - Rev 7 10 1 40 TC = 80 °C 60 40 10 -1 10 0 tp =1 ms single pulse TC=25 °C TJ≤175 °C VGE=15 V 10 Rectangular current shape (duty cycle = 0.5, VCC = 400 V, RG = 10 Ω, VGE= 0/15 V , TJ = 175 °C) f (kHz) 0 10 0 10 1 10 2 f (kHz) page 6/18 STGFW30H65FB, STGW30H65FB Electrical characteristics (curves) Figure 13. Normalized VGE(th) vs junction temperature V GE(th) (norm) AM16060v1 VCE = VGE, IC = 1 mA Figure 14. Normalized V(BR)CES vs junction temperature V(BR)CES (norm) AM16059v1 IC = 2 mA 1.1 1.0 0.9 1.0 0.8 0.7 0.6 -50 0 50 100 150 T J (°C) Figure 15. Switching energy vs temperature 0.9 -50 0 50 100 T J (°C) 150 Figure 16. Switching energy vs gate resistance GIPG280120141531FSR E (µJ) GIPG280120141535FSR E (µJ) VCC= 400V, V GE= 15V Rg= 10Ω, IC= 30A EOFF 600 VCC= 400V, V GE= 15V IC= 30A, TJ= 175 °C 1020 EOFF 820 400 EON 620 EON 200 420 220 0 20 40 60 80 100 120 140 160 TJ(°C) Figure 17. Switching energy vs collector current GIPG280120141605FSR E (µJ) 1200 VCC= 400V, V GE= 15V Rg= 10Ω, TJ= 175°C 1000 20 3 10 17 24 31 38 45 RG(Ω) Figure 18. Switching energy vs collector emitter voltage GIPG280120141609FSR E (µJ) 800 TJ= 175°C, VGE= 15V Rg= 10Ω, IC= 30A EOFF EOFF 600 800 600 400 EON 400 EON 200 200 0 0 DS10155 - Rev 7 20 40 60 IC(A) 0 150 250 350 450 VCE(V) page 7/18 STGFW30H65FB, STGW30H65FB Electrical characteristics (curves) Figure 19. Switching times vs collector current t (ns) GIPG100720141533FSR TJ= 175°C, VGE= 15V, RG= 10Ω, VCC= 400V Figure 20. Switching times vs gate resistance GIPG100720141549FSR t (ns) TJ= 175°C, VGE= 15V, IC= 30A, VCC= 400V tdoff tdoff 100 tf tdon 100 tdon 10 tf tr tr 1 0 10 20 30 40 IC(A) 50 Figure 21. Capacitance variations C (pF) 10 0 GIPG090720141358FSR 10 30 RG(Ω) 40 Figure 22. VCE(sat) vs collector current GIPG280120141446FSR VCE(sat) (V) Cies 20 VGE = 15 V 2.4 2.2 1000 TJ = 175 °C 2.0 1.8 100 1.6 Coes Cres 10 0.1 1 100 10 VCE (V) Figure 23. Gate charge vs gate-emitter voltage VGE (V) 16 14 TJ = 25 °C GIPG280120141455FSR TJ = -40 °C 1.4 1.2 15 45 30 Figure 24. Thermal impedance for TO-247 ZthTO2T_B K δ=0.5 VCC = 520 V, IC = 30 A IG = 1mA 0.2 12 0.1 10 0.05 -1 10 0.02 8 6 0.01 Zth = k*RthJC δ = tp/t 4 Single pulse 2 0 0 DS10155 - Rev 7 IC (A) 60 tp t -2 40 80 120 160 Qg (nC) 10 -5 10 -4 10 -3 10 -2 10 -1 10 tp (s) page 8/18 STGFW30H65FB, STGW30H65FB Electrical characteristics (curves) Figure 25. Thermal impedance for in TO-3PF ZthTOF3T_A K δ=0.5 0.2 0.1 0.05 -1 10 0.02 Zth = k*RthJC δ = tp/t 0.01 Single pulse tp t -2 10 DS10155 - Rev 7 -5 10 -4 10 -3 10 -2 10 -1 10 10 tp (s) page 9/18 STGFW30H65FB, STGW30H65FB Test circuits 3 Test circuits Figure 27. Gate charge test circuit Figure 26. Test circuit for inductive load switching C A A k L=100 µH G E B B RG 3.3 µF C G + k 1000 µF VCC k D.U.T k E k k AM01505v1 AM01504v1 Figure 28. Switching waveform 90% 10% VG 90% VCE 10% tr(Voff) tcross 90% IC td(on) ton td(off) tr(Ion) 10% tf toff AM01506v1 DS10155 - Rev 7 page 10/18 STGFW30H65FB, STGW30H65FB Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO-3PF package information Figure 29. TO-3PF package outline 7627132_6 DS10155 - Rev 7 page 11/18 STGFW30H65FB, STGW30H65FB TO-3PF package information Table 6. TO-3PF mechanical data Dim. mm Min. Max. A 5.30 5.70 C 2.80 3.20 D 3.10 3.50 D1 1.80 2.20 E 0.80 1.10 F 0.65 0.95 F2 1.80 2.20 G 10.30 11.50 G1 DS10155 - Rev 7 Typ. 5.45 H 15.30 15.70 L 9.80 L2 22.80 23.20 L3 26.30 26.70 L4 43.20 44.40 L5 4.30 4.70 L6 24.30 24.70 L7 14.60 15.00 N 1.80 2.20 R 3.80 4.20 Dia 3.40 3.80 10.00 10.20 page 12/18 STGFW30H65FB, STGW30H65FB TO-247 package information 4.2 TO-247 package information Figure 30. TO-247 package outline aaa 0075325_10 DS10155 - Rev 7 page 13/18 STGFW30H65FB, STGW30H65FB TO-247 package information Table 7. TO-247 package mechanical data Dim. mm Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 5.45 5.60 18.50 ØP 3.55 3.65 ØR 4.50 5.50 S 5.30 aaa DS10155 - Rev 7 Typ. 5.50 5.70 0.04 0.10 page 14/18 STGFW30H65FB, STGW30H65FB Ordering information 5 Ordering information Table 8. Order codes DS10155 - Rev 7 Order code Marking Package STGFW30H65FB G30H65FB TO-3PF STGW30H65FB GW30H65FB TO-247 Packing Tube page 15/18 STGFW30H65FB, STGW30H65FB Revision history Table 9. Document revision history Date Revision 28-Jan-2014 1 Changes Initial release. Updated units in Table 6: Switching characteristics (inductive load) for Ets, and updated note 1. 24-Feb-2014 2 Update Figure 16: Switching losses vs temperature, Figure 17: Switching losses vs gate resistance and Figure 18: Switching losses vs collector current. Updated title and features in cover page. Minor text changes. Added device in TO-3PF. Updated Table 1: Device summary, Table 2: Absolute maximum ratings, Table 3: Thermal data. Added Figure 6: Collector current vs. case temperature for TO-3PF, 10-Mar-2014 3 Figure 9: Power dissipation vs. case temperature for TO-3PF, Figure 11: Forward bias safe operating area for TO-3PF and Figure 26: Thermal impedance for TO-3PF. Updated Section 4: Package information. 20-May-2014 4 Updated Table 2: Absolute maximum ratings. Text and formatting changes throughout document Updated Table 2: Absolute maximum ratings 28-Jul-2015 5 Updated Section 2.1: Electrical characteristics (curves) Updated Section 3: Test circuits Updated Section 4.2: TO-247 package information Updated Section 4.3: TO-3P package information Updated applications in cover page. 27-Apr-2020 6 Updated Table 8. Order codes. Minor text changes. The part number STGWT30H65FB has been removed and the document has been updated 16-Mar-2021 7 accordingly. Updated Section 1 Electrical ratings and Section 2.1 Electrical characteristics (curves). Minor text changes. DS10155 - Rev 7 page 16/18 STGFW30H65FB, STGW30H65FB Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 5 4.1 TO-3PF package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.2 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 DS10155 - Rev 7 page 17/18 STGFW30H65FB, STGW30H65FB IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2021 STMicroelectronics – All rights reserved DS10155 - Rev 7 page 18/18