STGW30NC60KD

STGW30NC60KD 30 A - 600 V - short circuit rugged IGBT Features ■ Low on-voltage drop (VCE(sat)) ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with ultra fast free-wheeling diode 2 1 Applications ■ High frequency inverters ■ Motor drivers 3 TO-247 Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Table 1. Figure 1. Internal schematic diagram Device summary Order code Marking Package Packaging STGW30NC60KD GW30NC60KD TO-247 Tube March 2008 Rev 2 1/14 www.st.com 14 Contents STGW30NC60KD Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 7 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 STGW30NC60KD 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VCES Value Unit Collector-emitter voltage (VGE = 0) 600 V IC (1) Collector current (continuous) at TC = 25 °C 60 A IC (1) Collector current (continuous) at TC = 100 °C 28 A ICL(2) Turn-off latching current 125 A ICP(3) Pulsed collector current 125 A VGE Gate-emitter voltage ±20 V Diode RMS forward current at TC = 25 °C 30 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 120 A PTOT Total dissipation at TC = 25 °C 200 W tscw Short circuit withstand time, VCE = 0.5 V(BR)CES Tj = 125°C, RG = 10 Ω, VGE = 12 V 10 µs – 55 to 150 °C Value Unit Thermal resistance junction-case IGBT max. 0.625 °C/W Thermal resistance junction-case diode max. 1.5 °C/W Thermal resistance junction-ambient max 50 °C/W IF Tj 1. Parameter Operating junction temperature Calculated according to the iterative formula: T J ( MAX ) – T c I c ( T c ) = ------------------------------------------------------------------------------------R thj – c × V CE ( sat ) ( MAX ) ⋅ ( T c ,I c ) 2. Vclamp = 80%,(VCES), Tj =150°C, RG = 10 Ω, VGE = 15 V 3. Pulse width limited by max. junction temperature allowed Table 3. Symbol Rthj-case Rthj-amb Thermal resistance Parameter 3/14 Electrical characteristics 2 STGW30NC60KD Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol Static Parameter Test conditions V(BR)CES Collector-emitter breakdown IC= 1 mA voltage (VGE= 0) VCE(sat) Collector-emitter saturation voltage VGE= 15 V, IC= 20 A VGE= 15 V, IC= 20 A, TC= 125 °C ICES Collector cut-off current (VGE = 0) VCE = 600 V VCE = 600 V, TC= 125 °C VGE(th) Gate threshold voltage VCE= VGE, IC= 250 µA IGES Gate-emitter cut-off current (VCE = 0) VGE= ±20 V gfs (1) Forward transconductance VCE = 15 V , IC = 20 A Min. Typ. Max. Unit 600 V 2.1 2.7 1.9 4.5 V V 150 1 µA mA 6.5 V ±100 nA 15 S 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Table 5. Symbol Parameter Test conditions VCE = 25 V, f = 1 MHz, VGE= 0 Cres Input capacitance Output capacitance Reverse transfer capacitance Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge VCE = 480 V, IC = 20 A, VGE = 15 V (see Figure 18) Cies Coes 4/14 Dynamic Min. Typ. Max. Unit 2170 230 46 pF pF pF 96 18 46 nC nC nC STGW30NC60KD Table 6. Electrical characteristics Switching on/off (inductive load) Symbol Parameter td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope td(on) tr (di/dt)on Typ. Max Unit VCC = 480 V, IC = 20 A RG=10 Ω, VGE= 15 V, (see Figure 17) 29 12 1520 ns ns A/µs Turn-on delay time Current rise time Turn-on current slope VCC = 480 V, IC = 20 A RG=10 Ω, VGE= 15 V, TC= 125 °C (see Figure 17) 27 14 1360 ns ns A/µs tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCC = 480 V, IC = 20 A RG=10 Ω, VGE= 15 V, (see Figure 17) 36 120 85 ns ns ns tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time Vcc = 480 V, IC = 20 A, RG = 10 Ω, VGE = 15 V TC= 125 °C (see Figure 17) 75 160 130 ns ns ns Table 7. Symbol Test conditions Min. Switching energy (inductive load) Parameter Test conditions Min Typ. Max Unit Eon Eoff (1) Ets Turn-on switching losses Turn-off switching losses Total switching losses VCC = 480 V, IC = 20 A RG= 10 Ω, VGE= 15 V, (see Figure 17) 350 435 785 µJ µJ µJ Eon Eoff (1) Ets Turn-on switching losses Turn-off switching losses Total switching losses VCC = 480 V, IC = 20 A RG= 10 Ω, VGE= 15 V, TC= 125 °C (see Figure 17) 590 845 1435 µJ µJ µJ 1. Turn-off losses include also the tail of the collector current. 5/14 Electrical characteristics Table 8. Symbol Collector-emitter diode Parameter Test conditions IF = 20 A VF Forward on-voltage trr Reverse recovery time Reverse recovery charge Reverse recovery current IF = 20 A,VR = 50 V, Reverse recovery time Reverse recovery charge Reverse recovery current IF = 20 A,VR = 50 V, Qrr Irrm trr Qrr Irrm 6/14 STGW30NC60KD IF = 20 A, TC = 125 °C di/dt = 100 A/µs (see Figure 20) TC =125 °C, di/dt = 100 A/µs (see Figure 20) Min. Typ. Max. Unit 2.6 1.6 3.1 V V 40 50 2.5 ns nC A 80 180 4.5 ns nC A STGW30NC60KD Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Output characteristics Figure 3. Transfer characteristics Figure 4. Transconductance Figure 5. Collector-emitter on voltage vs temperature Figure 6. Gate charge vs gate-source voltage Figure 7. Capacitance variations 7/14 Electrical characteristics Figure 8. STGW30NC60KD Normalized gate threshold voltage vs temperature Figure 9. Collector-emitter on voltage vs collector current 1,15 VGE(th) (norm.) 1.05 IC = 250 µA 0.95 0.85 0.75 -75 -25 25 75 125 TC (°C) 175 Figure 10. Normalized breakdown voltage vs temperature Figure 11. Switching losses vs temperature 1,10 V(BR)CES (norm.) IC = 1 mA 1.05 1.00 0.95 0.90 -75 -25 25 75 125 TC (°C) 175 Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector current 8/14 STGW30NC60KD Electrical characteristics Figure 14. Thermal Impedance Figure 15. Turn-off SOA Figure 16. Forward voltage drop versus forward current IFM(A) 120 110 Tj=125˚C (Maximum values) 100 90 80 Tj=125˚C (Typical values) 70 60 Tj=25˚C (Maximum values) 50 40 30 20 10 VFM(V) 0 0 1 2 3 4 5 6 9/14 Test circuit 3 STGW30NC60KD Test circuit Figure 17. Test circuit for inductive load switching Figure 18. Gate charge test circuit Figure 19. Switching waveforms Figure 20. Diode recovery times waveform 10/14 STGW30NC60KD 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/14 Package mechanical data STGW30NC60KD TO-247 Mechanical data mm. Dim. A Min. 4.85 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 Max. 5.15 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 øP 3.55 3.65 øR 4.50 5.50 S 12/14 Typ 5.50 STGW30NC60KD 5 Revision history Revision history Table 9. Document revision history Date Revision Changes 24-Oct-2007 1 Initial release 07-Mar-2008 2 Updated Figure 15: Turn-off SOA 13/14 STGW30NC60KD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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