STGW30V60F

STGFW30V60F, STGW30V60F Datasheet Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Features 1 1 2 3 1 TO-247 2 3 TO-3PF • Maximum junction temperature: TJ = 175 °C • • Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 30 A • • • Tight parameter distribution Safe paralleling Low thermal resistance Applications • • • • • C(2, TAB) G(1) Photovoltaic inverters Uninterruptible power supply Welding Power factor correction Very high frequency converters Description E(3) G1C2TE3 This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status links STGFW30V60F STGW30V60F Product summary Order code STGFW30V60F Marking GFW30V60F Package TO-3PF Packing Tube Order code STGW30V60F Marking GW30V60F Package TO-247 Packing Tube DS9827 - Rev 5 - March 2021 For further information contact your local STMicroelectronics sales office. www.st.com STGFW30V60F, STGW30V60F Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol VCES Parameter Value TO-247 Collector-emitter voltage (VGE = 0 V) TO-3PF V 600 Continuous collector current at TC = 25 °C 60 60(1) Continuous collector current at TC = 100 °C 30 30(1) ICP(2) Pulsed collector current 120 120(1) VGE Gate-emitter voltage PTOT Total power dissipation at TC = 25 °C VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s, TC = 25 °C) TSTG Storage temperature range - 55 to 150 Operating junction temperature range - 55 to 175 IC TJ ±20 260 Unit A A V 92 W 3.5 kV °C 1. Limited by maximum junction temperature. 2. Pulse width limited by maximum junction temperature. Table 2. Thermal data Symbol DS9827 - Rev 5 Parameter RthJC Thermal resistance, junction-to-case RthJA Thermal resistance, junction-to-ambient Value TO-247 TO-3PF 0.58 1.63 50 Unit °C/W °C/W page 2/17 STGFW30V60F, STGW30V60F Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified. Table 3. Static characteristics Symbol Parameter Test conditions V(BR)CES Collector-emitter breakdown voltage VCE(sat) Collector-emitter saturation voltage VGE = 0 V, IC = 2 mA Min. Typ. 600 1.85 VGE = 15 V, IC = 30 A, TJ = 125 °C 2.15 VGE = 15 V, IC = 30 A, TJ = 175 °C 2.35 Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current IGES Gate-emitter leakage current 5 Unit V VGE = 15 V, IC = 30 A VGE(th) Max. 6 2.30 V 7 V VGE = 0 V, VCE = 600 V 25 µA VCE = 0 V, VGE = ±20 V 250 nA Table 4. Dynamic characteristics Symbol DS9827 - Rev 5 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 V VCC = 480 V, IC = 30 A, VGE = 0 to 15 V (see Figure 25. Gate charge test circuit) Min. Typ. Max. Unit - 3750 - pF - 120 - pF - 77 - pF - 163 - nC - 28 - nC - 72 - nC page 3/17 STGFW30V60F, STGW30V60F Electrical characteristics Table 5. IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Parameter Min. Typ. Max. Unit Turn-on delay time - 45 - ns Current rise time - 16 - ns - 1500 - A/μs - 189 - ns - 19 - ns - 383 - μJ Turn-on current slope Turn-off delay time Current fall time Test conditions VCE = 400 V, IC = 30 A, RG = 10 Ω, VGE = 15 V (see Figure 24. Test circuit for inductive load switching) (1) Turn-on switching energy Eoff(2) Turn-off switching energy - 233 - μJ Total switching energy - 616 - μJ Turn-on delay time - 42 - ns Current rise time - 17 - ns - 1337 A/μs - 193 ns - 32 ns - 794 μJ Eon Ets td(on) tr (di/dt)on td(off) tf Turn-on current slope Turn-off delay time Current fall time VCE = 400 V, IC = 30 A, RG = 10 Ω, VGE = 15 V, TJ = 175 °C (see Figure 24. Test circuit for inductive load switching) Eon(1) Turn-on switching energy Eoff(2) Turn-off switching energy - 378 μJ Total switching energy - 1172 μJ Ets 1. Including the reverse recovery of the diode. The diode is the same of the copacked STGW30V60DF. 2. Including the tail of the collector current. DS9827 - Rev 5 page 4/17 STGFW30V60F, STGW30V60F Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Power dissipation vs case temperature for TO-3PF PTOT (W) GADG030320211203PDT 80 Figure 2. Collector current vs case temperature for TO-3PF IC (A) GADG030320211203CCT 30 VGE ≥ 15 V, TJ ≤ 175 °C VGE ≥ 15 V, TJ ≤ 175 °C 60 20 40 10 20 0 25 75 125 175 TC (°C) Figure 3. Power dissipation vs case temperature for TO-247 AM17409v1 Ptot (W) 0 25 75 125 175 TC (°C) Figure 4. Collector current vs case temperature for TO-247 AM17410v1 IC (A) VGE =15 V, TJ = 175 °C 60 250 50 200 40 150 30 100 20 50 0 0 10 25 50 75 100 125 150 175 TC(°C) Figure 5. Output characteristics (TJ = 25 °C) AM17411v1 IC (A) 120 VGE=15V 13V 100 0 0 25 50 75 100 125 150 175 Figure 6. Output characteristics (TJ = 175 °C) AM17412v1 IC (A) 120 VGE=15V 13V 100 11V 80 80 60 60 9V 40 20 TC(°C) 11V 9V 40 20 7V 0 0 DS9827 - Rev 5 1 2 3 4 VCE(V) 0 0 1 2 3 4 VCE(V) page 5/17 STGFW30V60F, STGW30V60F Electrical characteristics (curves) Figure 7. VCE(sat) vs junction temperature VCE(sat) (V) 3.2 AM17413v1 VGE=15V IC=60A 3.0 VCE(sat) (V) 3.2 3.0 AM17414v1 Tj=175°C VGE=15V 2.8 2.6 2.8 2.6 2.2 2.0 IC=15A 1.8 1.6 0 50 100 150 TC(°C) Figure 9. Safe operating area for TO-3PF IC (A) Tj=25°C 2.4 2.2 IC=30A 2.4 1.4 1.2 -50 Figure 8. VCE(sat) vs collector current GADG030320211207FSOA 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 Tj=-40°C 10 30 20 40 50 60 IC(A) Figure 10. Safe operating area for TO-247 AM17416v1 IC (A) 100 10 2 10µs 10 100µs tp =10µs 10 1 tp =100µs 1ms 1 tp =1ms 10 0 0.1 Single pulse TC = 25 °C TJ ≤ 175 °C VGE = 15 V 10 1 10 2 10 -1 10 0 VCE (V) Figure 11. Normalized VGE(th) vs junction temperature AM17419v1 VGE(th) (norm) VCE=VGE IC=1mA Single pulse, Tc=25°C Tj