STGW33IH120D

STGW33IH120D 30 A - 1200 V - very fast IGBT Features ■ Low saturation voltage ■ High current capability ■ Low switching loss ■ Very soft ultra fast recovery antiparallel diode Applications 2 3 1 ■ Induction cooking, microwave oven ■ Soft switching application TO-247 Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. This device is well suited for the resonant or soft switching application. Table 1. Figure 1. Internal schematic diagram Device summary Order code Marking Package Packaging STGW33IH120D GW33IH120D TO-247 Tube March 2008 Rev 1 1/14 www.st.com 14 Contents STGW33IH120D Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 7 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 STGW33IH120D 1 Electrical ratings Electrical ratings Table 2. Symbol Parameter Value Unit 1200 V VCES Collector-emitter voltage (VGE = 0) IC (1) Collector current (continuous) at 25 °C 60 A IC (1) Collector current (continuous) at 100 °C 30 A ICL (2) Turn-off latching current 45 A ICP (3) Pulsed collector current 45 A VGE Gate-emitter voltage ±25 V PTOT Total dissipation at TC = 25 °C 220 W Diode RMS forward current at TC = 25 °C 30 A Surge non repetitive forward current tp = 10 ms sinusoidal 100 A –55 to 150 °C Value Unit IF IFSM Tj 1. Absolute maximum ratings Operating junction temperature Calculated according to the iterative formula: T –T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------C C R × V (T , I ) THJ – C CESAT ( MAX ) C C 2. Vclamp = 80% of VCES, Tj =150 °C, RG=10 Ω, VGE=15 V 3. Pulse width limited by max. junction temperature allowed Table 3. Symbol Thermal resistance Parameter Rthj-case Thermal resistance junction-case IGBT max. 0.57 °C/W Rthj-case Thermal resistance junction-case diode max. 1.6 °C/W Rthj-amb Thermal resistance junction-ambient max. 50 °C/W 3/14 Electrical characteristics 2 STGW33IH120D Electrical characteristics (TCASE= 25 °C unless otherwise specified) Table 4. Symbol Static Parameter Collector-emitter V(BR)CES breakdown voltage (VGE = 0) Test conditions Min. IC = 1 mA Typ. Max. Unit 1200 VCE(sat) Collector-emitter saturation VGE= 15 V, IC= 20 A voltage VGE= 15 V, IC= 20 A, Tc =125 °C VGE(th) Gate threshold voltage VCE= VGE, IC= 1 mA ICES Collector-cut-off current (VGE = 0) VCE =1200 V IGES gfs (1) V 2.2 2.0 2.8 V V 5.75 V VCE =1200 V, Tc=125 °C 500 10 µA mA Gate-emitter leakage current (VCE = 0) VGE =± 20 V ± 100 nA Forward transconductance VCE = 25 V, IC= 20 A 3.75 20 S 1. Pulsed: pulse duration= 300 µs, duty cycle 1.5% Table 5. Symbol Cies Coes Cres Qg Qge Qgc 4/14 Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions VCE = 25 V, f = 1 MHz, VGE=0 VCE = 960 V, IC= 20 A,VGE=15 V Min. Typ. Max. Unit 2900 162 30 pF pF pF 127 18 50 nC nC nC STGW33IH120D Electrical characteristics Table 6. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Table 7. Symbol Eon (1) Eoff (2) Ets Eon (1) Eoff (2) Ets 1. Switching on/off (inductive load) Parameter Test conditions Turn-on delay time Current rise time Turn-on current slope VCC = 960 V, IC = 20 A Turn-on delay time Current rise time Turn-on current slope VCC = 960 V, IC = 20 A Off voltage rise time Turn-off delay time Current fall time VCC = 960 V, IC = 20 A Off voltage rise time Turn-off delay time Current fall time VCC = 960 V, IC = 20 A Min. RG= 10 Ω, VGE= 15 V, (see Figure 17) RG= 10 Ω, VGE= 15 V, Tc= 125 °C (see Figure 17) RG= 10 Ω, VGE= 15 V, (see Figure 17) RG= 10 Ω, VGE= 15 V, Tc= 125 °C (see Figure 17) Typ. Max. Unit 46 10 1660 ns ns A/µs 45 12 1500 ns ns A/µs 102 284 180 ns ns ns 200 424 316 ns ns ns Switching energy (inductive load) Parameter Test conditions Turn-on switching losses Turn-off switching losses Total switching losses VCC = 960 V, IC = 20 A Turn-on switching losses Turn-off switching losses Total switching losses VCC = 960 V, IC = 20 A RG= 10 Ω, VGE= 15 V, (see Figure 17) RG= 10 Ω, VGE= 15 V, Tc= 125 °C (see Figure 17) Min. Typ. Max. Unit 1.5 3.4 4.9 mJ mJ mJ 2.3 6.4 8.7 mJ mJ mJ Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) 2. Turn-off losses include also the tail of the collector current 5/14 Electrical characteristics Table 8. Symbol Collector-emitter diode Parameter VF Forward on-voltage trr Reverse recovery time Reverse recovery charge Reverse recovery current Qrr Irrm trr Qrr Irrm 6/14 STGW33IH120D Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions IF = 20 A IF = 20 A, TC = 125 °C IF = 20 A, VR = 45 V, di/dt = 100 A/µs (see Figure 20) IF = 20 A, VR = 45 V, Tc = 125 °C, di/dt = 100 A/µs (see Figure 20) Min. Typ. Max. Unit 1.9 1.7 V V 85 235 5.6 ns nC A 152 722 9 ns nC A STGW33IH120D Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Output characteristics Figure 3. HV42580 IC(A) VGE=15 V Transfer characteristics HV42585 IC(A) 14 V VCE=15V 13 V 300 250 12 V 250 200 11 V 200 10 V 150 150 9V 100 100 8V 50 50 7V 0 0 5 Figure 4. 15 10 VCE(V) Transconductance 0 Figure 5. HV42590 Gfs(S) TC=-50°C 26 5 10 15 VGE(V) Collector-emitter on voltage vs temperature HV42600 VCE(sat) (V) 24 2.5 25°C 22 IC=40A 2.375 20 125°C 18 2.25 16 2.125 14 12 2.0 10 1.875 8 IC=20A 1.75 6 IC=10A 1.625 4 1.5 -75 -50 2 0 Figure 6. 5 20 15 10 IC(A) Gate charge vs gate-source voltage Figure 7. HV42630 VGE(V) 16 0 25 50 75 100 125 150 TJ(°C) Capacitance variations HV42620 C(pF) 4500 VCC=960V IC=20A 14 -25 f=1MHz 4000 3500 12 Cies 3000 10 2500 Coes 8 2000 6 1500 4 1000 Cres 2 500 0 0 50 100 150 Qg(nC) 0 10 20 30 40 VCE(V) 7/14 Electrical characteristics Figure 8. STGW33IH120D Normalized gate threshold voltage vs temperature HV42610 VGE(th) (norm) IC=250µA Figure 9. Collector-emitter on voltage vs collector current HV42650 VCE(sat) (V) TC=125°C 2.45 1.1 2.25 TC=-50°C 1.05 2.05 1.0 1.85 0.95 1.65 0.9 1.45 0.85 TC=25°C 0.8 1.25 0.75 1.05 0.7 -75 0.85 -50 -25 0 25 50 75 100 125 150 TJ(°C) Figure 10. Normalized breakdown voltage vs temperature 0 10 20 30 40 IC(A) Figure 11. Switching losses vs temperature HV42640 BVCES (norm) IC=1mA 1.1 1.075 1.05 1.025 1 0.975 0.95 0.925 0.9 -75 -50 -25 0 25 50 75 100 125 150 TJ(°C) Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector current 8/14 STGW33IH120D Electrical characteristics Figure 14. Thermal impedance Figure 15. Turn-off SOA HV42690 IC(A) 10 1 0.1 1 10 100 1000 VCE(V) Figure 16. Emitter-collector diode characteristics IFM(A) 100 90 Tj=150°C (typical values) 80 70 60 50 Tj=25°C (maximum values) 40 Tj=150°C (maximum values) 30 20 10 VFM(V) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 9/14 Test circuit 3 STGW33IH120D Test circuit Figure 17. Test circuit for inductive load switching Figure 18. Gate charge test circuit Figure 19. Switching waveform Figure 20. Diode recovery time waveform 10/14 STGW33IH120D 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/14 Package mechanical data STGW33IH120D TO-247 Mechanical data mm. Dim. A Min. 4.85 A1 2.20 Max. 5.15 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 øP 3.55 3.65 øR 4.50 5.50 S 12/14 Typ 5.50 STGW33IH120D 5 Revision history Revision history Table 9. Document revision history Date Revision 12-Mar-2008 1 Changes Initial release 13/14 STGW33IH120D Please Read Carefully: Information in this document is provided solely in connection with ST products. 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