STGW35NB60SD

STGW35NB60SD N-CHANNEL 35A - 600V - TO-247 Low Drop PowerMESH™ IGBT General features Type VCES VCE(sat) (Max)@ 25°C IC @100°C STGW35NB60SD 600V < 1.7V 35A ■ LOW ON-VOLTAGE DROP (VCEsat) ■ LOW INPUT CAPACITANCE ■ HIGH CURRENT CAPABILITY 3 2 1 TO-247 Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. Internal schematic diagram Applications ■ LIGHT DIMMER ■ HID ■ WELDING ■ MOTOR CONTROL ■ STATIC RELAYS Order codes Sales Type Marking Package Packaging STGW35NB60SD GW35NB60SD TO-247 TUBE November 2005 Rev 1 1/13 www.st.com 13 STGW35NB60SD 1 Electrical ratings 1 Electrical ratings Table 1. Symbol Absolute maximum ratings Value Unit Collector-Emitter Voltage (VGS = 0) 600 V IC Note 4 Collector Current (continuous) at 25°C 70 A IC Note 4 Collector Current (continuous) at 100°C 35 A Collector Current (pulsed) 250 A Gate-Emitter Voltage ± 20 V Diode RMS Forward Current at TC = 25°C 30 A Total Dissipation at TC = 25°C 200 W – 55 to 150 °C 300 °C VCES ICM Note 1 VGE If PTOT Tj Parameter Operating Junction Temperature Tstg Storage Temperature TL Maximum Lead Temperature for Soldering Purpose (1.6mm from case, for 10sec.) Table 2. Thermal resistance Min. Typ. Max. Unit Rthj-case Thermal Resistance Junction-case (IGBT) -- -- 0.625 °C/W Rthj-case Thermal Resistance Junction-case (DIODE) -- -- 1.5 °C/W Rthj-amb Thermal Resistance Junction-ambient -- -- 50 °C/W 2/13 STGW35NB60SD 2 2 Electrical characteristics Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 3. Static Symbol Parameter Test Conditions VBR(CES) Collectro-Emitter Breakdown Voltage VCE(SAT) Collector-Emitter Saturation Voltage VGE= 15V, IC= 20A, Tj= 125°C Gate Threshold Voltage VCE= VGE, IC= 250µA ICES Collector-Emitter Leakage Current (VGE = 0) VCE = Max Rating,Tc=25°C IGES Gate-Emitter Leakage Current (VCE = 0) VGE = ± 20V , VCE = 0 Forward Transconductance VCE = 10V, IC= 18A VGE(th) gfs Table 4. Symbol C ies C oes Cres Qg Typ. Max. 600 VGE= 15V, IC= 20A, Tj= 25°C Unit V 1.25 1.2 2.5 VCE = Max Rating, Tc=125°C 1.7 V V 5 V 10 100 µA µA ± 100 nA 20 S Dynamic Parameter Test Conditions Min. Qgc ICL Turn-Off SOA Minimum Current VCE = 480V, IC = 20A, 83 10 27 VGE = 15V, (see Figure 17) Vclamp = 480V , Tj = 125°C RG = 100Ω Typ. Max. 80 Unit pF pF pF 1820 167 27 Input Capacitance VCE = 25V, f = 1 MHz, VGE = 0 Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Qge IC = 1mA, V GE = 0 Min. 115 nC nC nC A 3/13 STGW35NB60SD 2 Electrical characteristics Table 5. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Table 6. Switching on/off (inductive load) Parameter Turn-on Delay Time Current Rise Time Turn-on Current Slope Turn-on Delay Time Current Rise Time Turn-on Current Slope Off Voltage Rise Time Turn-off Delay Time Current Fall Time Off Voltage Rise Time Turn-off Delay Time Current Fall Time Test Conditions VCC = 480V, IC = 20A RG= 100Ω, VGE= 15V, Tj= 25°C (see Figure 3) VCC = 480V, IC = 20A RG= 100Ω, VGE= 15V, Tj= 125°C (see Figure 3) Vcc = 480V, IC = 20A, RGE = 100Ω , VGE = 5V,T J=25°C (see Figure 18) Vcc = 480V, IC = 20A, RGE=100Ω,VGE =15V, Tj=125°C (see Figure 18) Parameter Eon Note 2 Turn-on Switching Losses Turn-off Switching Losses Total Switching Losses VCC = 480V, IC = 20A Turn-on Switching Losses Turn-off Switching Losses Total Switching Losses VCC = 480V, IC = 20A Ets Eon Note 2 Eoff Note 3 Ets 4/13 Typ. Max. Unit 92 70 340 ns ns A/µs 80 73 320 ns ns A/µs 0.78 1.1 0.79 µs µs µs 1.1 2.4 1.2 µs µs µs Switching energy (inductive load) Symbol Eoff Note 3 Min. Test Conditions RG=100Ω, VGE= 15V, Tj= 25°C (see Figure 18) RG=100Ω, VGE= 15V, Tj= 125°C (see Figure 18) Min. Typ. Max. Unit 0.84 7.4 8.24 mJ mJ mJ 0.86 11.5 12.4 mJ mJ mJ STGW35NB60SD Table 7. Symbol 2 Electrical characteristics Collector-emitter diode Parameter Vf Forward On-Voltage trr Reverse Recovery Time ta S Reverse Recovery Charge Reverse Recovery Current Softness factor of the diode trr Reverse Recovery Time Qrr Irrm ta Qrr Irrm S Reverse Recovery Charge Reverse Recovery Current Softness factor of the diode Test Conditions If = 10A If = 10A, Tj = 125°C If = 20A, VR = 40V, Tj = 25°C, di/dt = 100A/µs (see Figure 19) If = 20A, VR = 40V, Tj = 125°C, di/dt = 100A/µs (see Figure 19) Min. Typ. Max. Unit 1.3 1 2 V V 44 32 66 3 0.375 ns ns nC A 88 56 237 5.4 0.57 ns ns nC A (1)Pulse width limited by max. junction temperature (2) Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) (3) Turn-off losses include also the tail of the collector current (4) Calculated according to the iterative formula: T –T JMAX C I ( T ) = -------------------------------------------------------------------------------------------------C C R ×V (T , I ) THJ – C CESAT ( MAX ) C C 5/13 STGW35NB60SD 2 Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Transconductance Figure 4. Normalized Collector-Emitter On Voltage vs Temperature Figure 5. Collector-Emitter on Voltage vs Collector Current Figure 6. Gate Threshold vs Temperature 6/13 STGW35NB60SD 2 Electrical characteristics Figure 7. Normalized Breakdown Voltage vs Temperature Figure 8. Figure 9. Capacitance Variations Figure 10. Switching Losses vs Gate Charge Figure 11. Switching Losses vs Temperature Gate Charge vs Gate-Emitter Voltage Figure 12. Switching Losses vs Collector Current 7/13 STGW35NB60SD 2 Electrical characteristics Figure 13. Thermal Impedance Figure 15. Emitter-Collector Diode Characteristics 8/13 Figure 14. Turn-Off SOA STGW35NB60SD 3 3 Test Circuits Test Circuits Figure 16. Test Circuit for Inductive Load Switching Figure 17. Gate Charge Test Circuit Figure 18. Switching Waveform Figure 19. Diode Recovery Time Waveform 9/13 4 Package mechanical data 4 STGW35NB60SD Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/13 STGW35NB60SD 4 Package mechanical data TO-247 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 0.134 b2 3.0 3.40 0.118 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 e 5.45 L 14.20 14.80 0.560 L1 3.70 4.30 0.14 L2 0.620 0.214 18.50 0.582 0.17 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S 5.50 0.216 11/13 STGW35NB60SD 5 Revision History 5 12/13 Revision History Date Revision 16-Nov-2005 1 Changes Initial release. STGW35NB60SD 5 Revision History Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 13/13