STGW35NC120HD

STGW35NC120HD 32 A, 1200 V very fast IGBT Datasheet - production data Features • Low on-losses • Low on-voltage drop (VCE(sat)) ) s t( • High current capability c u d • IGBT co-packaged with ultrafast free-wheeling diode • Low gate charge 3 2 1 o r P • Ideal for soft switching application TO-247 long leads e t le Application o s b • Induction heating Figure 1. Internal schematic diagram • High frequency inverters -O • UPS ) s ( ct u d o r P e Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. t e l o s b O Table 1. Device summary Order code Marking Package Packaging STGW35NC120HD GW35NC120HD TO-247 long leads Tube December 2013 This is information on a product in full production. DocID14378 Rev 3 1/13 www.st.com Contents STGW35NC120HD Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits ............................................... 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 ) s t( c u d e t le o s b O ) s ( t c u d o r P e t e l o s b O 2/13 DocID14378 Rev 3 o r P STGW35NC120HD 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Collector-emitter voltage (VGE = 0) VCES Value Unit 1200 V IC (1) Continuous collector current at TC = 25 °C 60 A IC (1) Continuous collector current at TC = 100 °C 32 A ICL (2) Turn-off latching current 135 (3) Pulsed collector current 135 VGE Gate-emitter voltage ±25 PTOT Total dissipation at TC = 25 °C ICP IF Diode RMS forward current at TC = 25 °C ol Operating junction temperature Tj 1. e t e Surge non repetitive forward current tp = 10 ms sinusoidal IFSM s b O Calculated according to the iterative formula: A t c u od 235 Pr ) s ( A V W 30 A 100 A –55 to 150 °C Tj ( max ) – TC IC ( T C ) = ------------------------------------------------------------------------------------------------------Rthj – c × V CE ( sat ) ( max ) ( T j ( max ), I C ( T C ) ) ) (s 2. Vclamp = 80% of VCES, Tj =125 °C, RG=10 Ω, VGE=15 V t c u 3. Pulse width limited by max. junction temperature allowed d o r P e Symbol s b O t e l o Table 3. Thermal data Parameter Value Unit Thermal resistance junction-case IGBT 0.53 °C/W Thermal resistance junction-case diode 1.5 °C/W Thermal resistance junction-ambient 50 °C/W Rthj-case Rthj-amb DocID14378 Rev 3 3/13 13 Electrical characteristics 2 STGW35NC120HD Electrical characteristics (Tj =25 °C unless otherwise specified) Table 4. Static Symbol Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 1 mA VGE(th) Gate threshold voltage VCE= VGE, IC= 250μA 3.75 ICES Collector cut-off current (VGE = 0) VCE =1200 V VCE =1200 V, Tj =125 °C od IGES Gate-emitter leakage current (VCE = 0) VGE =± 20 V gfs (1) Forward transconductance VCE = 25 V, IC= 20 A s ( t c Cies Coes Cres e t e l Qg 4/13 Parameter du t e l o Test conditions Total gate charge Qgc Gate-collector charge 5.75 V 500 10 μA mA ± 100 nA 14 S Min. Typ. Max. Unit - 2510 - pF - 175 - pF - 30 - pF - 110 - nC - 16 - nC - 49 - nC VCE = 25 V, f = 1 MHz, VGE=0 Reverse transfer capacitance Gate-emitter charge t c u V V Table 5. Dynamic Output capacitance Qge ) s ( 2.75 s b O Input capacitance o r P 2.2 2.0 r P e Unit V VGE= 15 V, IC= 20 A, VGE= 15 V, IC= 20 A, Tj =125 °C )- Max. 1200 Collector-emitter saturation voltage Symbol Ob Typ. VCE(sat) 1. Pulse duration = 300 μs, duty cycle 1.5% so Min. VCE = 960 V, IC= 20 A,VGE=15 V DocID14378 Rev 3 STGW35NC120HD Electrical characteristics Table 6. Switching on/off (inductive load) Symbol td(on) tr Parameter Test conditions Turn-on delay time VCC = 960 V, IC = 20 A RG= 10 Ω, VGE= 15 V, Figure 17 Current rise time (di/dt)on td(on) tr Turn-on current slope Turn-on delay time VCC = 960 V, IC = 20 A RG= 10 Ω, VGE= 15 V, Tj =125 °C Figure 17 Current rise time (di/dt)on Turn-on current slope tr(Voff) Off voltage rise time td(off) Turn-off delay time tf VCC = 960 V, IC = 20 A RG= 10 Ω, VGE= 15 V, Figure 17 Current fall time tr(Voff) Off voltage rise time td(off) Turn-off delay time tf Typ. Max. Unit - 29 - ns - 11 - ns - 1820 - A/μs - 27 - ns - 14 - ns - 1580 - A/μs - 90 - ns - 275 ) s ( t c u d o r - ns - 312 - ns - 150 - ns - 336 - ns - 592 - ns Min. Typ. Max. Unit VCC = 960 V, IC = 20 A RG= 10 Ω, VGE= 15 V, Figure 17 - 1660 - μJ VCC = 960 V, IC = 20 A RG= 10 Ω, VGE= 15 V, Tj =125 °C Figure 17 - 3015 - μJ - 6900 - μJ - 9915 - μJ VCC = 960 V, IC = 20 A RG= 10 Ω, VGE= 15 V, Tj =125 °C Figure 17 eP let Current fall time Min. o s b Table 7. Switching energy (inductive load) Symbol Turn-on switching losses (2) Turn-off switching losses Ets Eon (1) ct t e l o (2) Ets du Total switching losses ro Turn-on switching losses P e Eoff s b O (s) Eon (1) Eoff 1. Parameter Turn-off switching losses Total switching losses -O Test conditions 4438 μJ 6098 μJ Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25 °C and 125 °C) 2. Turn-off losses include also the tail of the collector current Table 8. Collector-emitter diode Symbol Parameter Test conditions VF Forward on-voltage IF = 20 A IF = 20 A, TC = 125 °C trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current IF = 20 A, VR = 27 V, Tj =125 °C, di/dt = 100 A/μs Figure 20 DocID14378 Rev 3 Min. Typ. Max. Unit 1.9 1.7 2.5 - V V - 152 - ns - 722 - nC - 9 - A 5/13 13 Electrical characteristics 2.1 STGW35NC120HD Electrical characteristics (curves) Figure 2. Output characteristics Figure 3. Transfer characteristics ) s t( c u d Figure 4. Transconductance o r P Figure 5. Collector-emitter on voltage vs. temperature e t le o s b O ) s ( t c u d o r P e t e l o Figure 6. Gate charge vs. gate-source voltage s b O 6/13 DocID14378 Rev 3 Figure 7. Capacitance variations STGW35NC120HD Electrical characteristics Figure 8. Normalized gate threshold voltage vs. temperature Figure 9. Collector-emitter on voltage vs. collector current ) s t( Figure 10. Normalized breakdown voltage vs. temperature c u d o r P Figure 11. Switching losses vs. temperature e t le o s b O ) s ( t c u d o r P e Figure 12. Switching losses vs. gate resistance Figure 13. Switching losses vs. collector current t e l o s b O DocID14378 Rev 3 7/13 13 Electrical characteristics STGW35NC120HD Figure 14. Thermal Impedance Figure 15. Reverse biased SOA ) s t( c u d Figure 16. Forward voltage drop vs. forward current IFM(A) 100 e t le 90 Tj=150˚C (typical values) 80 70 o s b 60 50 Tj=25˚C (maximum values) 40 O ) Tj=150˚C (maximum values) 30 20 10 s ( t c VFM(V) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 u d o r P e t e l o s b O 8/13 DocID14378 Rev 3 o r P STGW35NC120HD 3 Test circuits Test circuits Figure 17. Test circuit for inductive load switching Figure 18. Gate charge test circuit ) s t( c u d AM01504v1 e t le Figure 19. Switching waveform o s b 10% -O ) s ( t Qrr di/dt IF 90% VCE trr ta tb 10% Tr(Voff) Tcross t 90% IC uc Td(off) Td(on) d o r Tr(Ion) Ton P e t e l o Toff AM01505v1 Figure 20. Diode recovery time waveform 90% VG o r P IRRM IRRM 10% Tf VF di/dt AM01506v1 AM01507v1 s b O DocID14378 Rev 3 9/13 13 Package mechanical data 4 STGW35NC120HD Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 9. TO-247 long leads mechanical data mm Dim. Min. A 4.90 D 1.85 E 0.55 F 1.07 F1 1.90 F2 2.87 c u d 2.10 15.77 L 20.82 ol 4.16 L2 du L3 ro L4 P e bs O 10/13 s b O )- 2.38 3.38 21.07 4.47 5.49 5.74 20.05 20.30 3.68 3.93 6.04 6.29 2.25 2.55 V 10° V1 3° V3 20° Dia. 1.32 16.02 s ( t c L1 t e l o e t e o r P 0.67 10.90 BSC H M Max. 5.15 G L5 ) s t( Typ. 3.55 3.66 DocID14378 Rev 3 STGW35NC120HD Package mechanical data Figure 21. TO-247 long leads drawing ) s t( c u d e t le o r P o s b O ) s ( t c u d o r P e t e l o s b O 7395426_G DocID14378 Rev 3 11/13 13 Revision history 5 STGW35NC120HD Revision history Table 10. Document revision history Date Revision Changes 25-Jan-2008 1 First issue. 07-May-2009 2 Section 4: Package mechanical data has been updated. 12-Dec-2013 3 Updated Section 4: Package mechanical data. Minor text changes. ) s t( c u d e t le o s b O ) s ( t c u d o r P e t e l o s b O 12/13 DocID14378 Rev 3 o r P STGW35NC120HD ) s t( Please Read Carefully: c u d Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. e t le o r P Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. o s b No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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