STGW35NC60WD

STGW35NC60WD 40 A, 600 V ultra fast IGBT Features ■ High frequency operation ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode Applications 2 ■ High frequency motor controls, inverters, UPS ■ HF, SMPS and PFC in both hard switch and resonant topologies 3 1 TO-247 long leads Description This IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Table 1. Figure 1. Internal schematic diagram Device summary Order code Marking Package Packaging STGW35NC60WD GW35NC60WD TO-247 long leads Tube November 2008 Rev 2 1/14 www.st.com 14 Contents STGW35NC60WD Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 7 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 STGW35NC60WD 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit VCES Collector-emitter voltage (VGE = 0) 600 V IC (1) Collector current (continuous) at 25 °C 70 A IC (1) Collector current (continuous) at 100 °C 40 A ICP(2) Collector current (pulsed) 150 A ICL (3) Turn-off latching current 150 A Gate-emitter voltage ± 20 V Diode RMS forward current at TC = 25 °C 30 A IFSM Surge not repetitive forward current tp= 10 ms sinusoidal 120 A PTOT Total dissipation at TC = 25 °C 260 W Tstg Storage temperature – 55 to 150 °C Value Unit Thermal resistance junction-case IGBT max. 0.48 °C/W Thermal resistance junction-case diode max. 1.5 °C/W Thermal resistance junction-ambient max. 50 °C/W VGE IF Tj 1. Parameter Operating junction temperature Calculated according to the iterative formula: T j ( max ) – T C I C ( T C ) = ------------------------------------------------------------------------------------------------------R thj – c × V CE ( sat ) ( max ) ( T j ( max ), I C ( T C ) ) 2. Pulse width limited by max junction temperature 3. VCLAMP = 80% (VCES), VGE = 15 V, RG = 10 Ω, TJ = 150 °C Table 3. Symbol Rthj-case Rthj-amb Thermal resistance Parameter 3/14 Electrical characteristics 2 STGW35NC60WD Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. Symbol Static electrical characteristics Parameter Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 1 mA VCE(sat) Collector-emitter saturation VGE = 15 V, IC= 20 A voltage VGE = 15 V, IC = 20 A,TC= 125 °C VGE(th) Gate threshold voltage VCE = VGE, IC = 250 µA ICES Collector cut-off current (VGE = 0) VCE = 600 V IGES Gate-emitter leakage current (VCE = 0) VGE = ±20 V Forward transconductance VCE = 15 V, IC = 20 A gfs Table 5. Symbol Cies Coes Cres Qg Qge Qgc 4/14 Test conditions Min. Typ. Max. Unit 600 V 2.2 1.8 3.75 VCE = 600 V, TC = 125 °C 2.6 V V 5.75 V 250 1 µA mA ± 100 nA 15 S Dynamic electrical characteristics Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 VCE = 390 V, IC = 20 A, VGE = 15 V, (see Figure 18) Min. Typ. Max. Unit 2080 175 52 102 17.5 47 pF pF pF 140 nC nC nC STGW35NC60WD Table 6. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Table 7. Symbol Eon(1) Eoff Ets Eon(1) Eoff Ets Electrical characteristics Switching on/off (inductive load) Parameter Test conditions Turn-on delay time Current rise time Turn-on current slope VCC = 390 V, IC = 20 A Turn-on delay time Current rise time Turn-on current slope VCC = 390 V, IC = 20 A Off voltage rise time Turn-off delay time Current fall time VCC = 390 V, IC = 20 A, Off voltage rise time Turn-off delay time Current fall time Min. RG = 10 Ω, VGE = 15 V, (see Figure 17) RG = 10 Ω, VGE = 15 V, TC = 125 °C (see Figure 17) RGE = 10 Ω, VGE = 15 V (see Figure 17) VCC = 390 V, IC = 20 A, RGE = 10 Ω, VGE =15 V, TC = 125 °C (see Figure 17) Typ. Max. Unit 29.5 12 1640 ns ns A/µs 29 13.5 1600 ns ns A/µs 19.5 118 27 ns ns ns 46 151 38 ns ns ns Switching energy (inductive load) Parameter Test conditions Turn-on switching losses Turn-off switching losses Total switching losses VCC = 390 V, IC = 20 A Turn-on switching losses Turn-off switching losses Total switching losses VCC = 390 V, IC = 20 A RG = 10 Ω, VGE = 15 V, (see Figure 19) RG = 10 Ω, VGE = 15 V, TC = 125°C (see Figure 19) Min. Typ. Max. Unit 305 181 486 µJ µJ µJ 455 355 810 µJ µJ µJ 1. Eon is the tun-on losses when a typical diode is used in the test circuit in Figure 19. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C). Eon include diode recovery energy. 5/14 Electrical characteristics Table 8. Symbol Collector-emitter diode Parameter VF Forward on-voltage trr Reverse recovery time Reverse recovery charge Reverse recovery current Qrr Irrm trr Qrr Irrm 6/14 STGW35NC60WD Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions IF = 20 A IF = 20 A, TC = 125 °C IF = 20 A,VR = 50 V, di/dt = 100 A/µs (see Figure 20) IF = 20 A,VR = 50 V, TC =125 °C, di/dt = 100 A/µs (see Figure 20) Min. Typ. Max. Unit 2.6 1.6 V V 40 50 2.5 ns nC A 80 180 4.5 ns nC A STGW35NC60WD Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Output characteristics Figure 3. Transfer characteristics Figure 4. Transconductance Figure 5. Collector-emitter on voltage vs temperature HV28940 VCE(V) VGE=15V 3.2 3 40A 30A 2.8 20A 2.6 2.4 2.2 2 1.8 IC=10A 1.6 1.4 -75 Figure 6. Gate charge vs gate-source voltage Figure 7. -50 -25 0 25 50 75 100 125 150 TJ(°C) Capacitance variations 7/14 Electrical characteristics Figure 8. Normalized gate threshold voltage vs temperature STGW35NC60WD Figure 9. Collector-emitter on voltage vs collector current HV28950 VCE(sat) (V) 3.2 TJ=-50°C 3 TJ=25°C 2.8 2.6 2.4 2.2 TJ=150°C 2 1.8 1.6 1.4 1.2 1 0.8 0 Figure 10. Normalized breakdown voltage vs temperature 5 10 15 20 25 30 35 40 45 50 55 60 IC(A) Figure 11. Switching losses vs temperature Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector current 8/14 STGW35NC60WD Electrical characteristics Figure 14. Thermal impedance Figure 15. Turn-off SOA Figure 16. Emitter-collector diode characteristics IFM(A) 120 110 Tj=125˚C (Maximum values) 100 90 80 Tj=125˚C (Typical values) 70 60 Tj=25˚C (Maximum values) 50 40 30 20 10 VFM(V) 0 0 1 2 3 4 5 6 9/14 Test circuit 3 STGW35NC60WD Test circuit Figure 17. Test circuit for inductive load switching Figure 18. Gate charge test circuit AM01504v1 Figure 19. Switching waveform AM01505v1 Figure 20. Diode recovery time waveform VG IF trr 90% VCE Qrr di/dt 90% 10% ta tb 10% Tr(Voff) t Tcross 90% IRRM IRRM IC 10% Td(off) Td(on) Tr(Ion) Ton Tf Toff VF di/dt AM01506v1 10/14 AM01507v1 STGW35NC60WD 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/14 Package mechanical data STGW35NC60WD TO-247 long leads mechanical data mm Dim. Min. A D E F F1 F2 F3 F4 G H L L1 L2 L3 L4 L5 M V V2 DIAM Typ. Max. 4.85 2.2 0.4 1 5.16 2.6 0.8 1.4 3 2 1.9 3 2.4 3.4 10.9 15.45 19.85 3.7 18.3 14.2 34.05 5.35 2 16.03 21.09 4.3 19.13 20.3 41.38 6.3 3 5° 60° 3.55 3.65 V 5 H L1 L4 L2 L DIA L5 A F2 F1 L3 F3 D F4 V2 F(X3) M E G = 12/14 = 7395426_Rev_D STGW35NC60WD 5 Revision history Revision history Table 9. Document revision history Date Revision Changes 12-Jul-2007 1 Initial release. 11-Nov-2008 2 Document status promoted from preliminary data to datasheet. 13/14 STGW35NC60WD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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