STGW40H65DFB-4

STGW40H65DFB-4 Datasheet Trench gate field-stop 650 V, 40 A high speed HB series IGBT Features 1 2 4 3 TO247-4 C(1, TAB) • Maximum junction temperature: TJ = 175 °C • • • High speed switching series Minimized tail current Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A • • • Tight parameter distribution Safe paralleling Positive VCE(sat) temperature coefficient • • • Low thermal resistance Very fast soft recovery antiparallel diode Excellent switching performance thanks to the extra driving kelvin pin G(4) Applications K(3) E(2) NG4K3E2C1_TAB • • Photovoltaic inverters High frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. A faster switching event can be achieved by the Kelvin pin, which separates power path from driving signal. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGW40H65DFB-4 Product summary Order code STGW40H65DFB-4 Marking G40H65DFB Package TO247-4 Packing Tube DS11520 - Rev 4 - June 2019 For further information contact your local STMicroelectronics sales office. www.st.com STGW40H65DFB-4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0 V) 650 V Continuous collector current at TC = 25 °C 80 Continuous collector current at TC = 100 °C 40 Pulsed collector current 160 Gate-emitter voltage ±20 Transient gate-emitter voltage ±30 Continuous forward current at TC = 25 °C 80 Continuous forward current at TC = 100 °C 40 IFP (1) Pulsed forward current 160 A PTOT Total power dissipation at TC = 25 °C 283 W TSTG Storage temperature range - 55 to 150 Operating junction temperature range - 55 to 175 VCES IC ICP (1) VGE IF TJ Parameter A A V A °C 1. Pulse width limited by maximum junction temperature. Table 2. Thermal data Symbol DS11520 - Rev 4 Parameter Value RthJC Thermal resistance junction-case IGBT 0.53 RthJC Thermal resistance junction-case diode 1.14 RthJA Thermal resistance junction-ambient Unit °C/W 50 page 2/15 STGW40H65DFB-4 Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 3. Static characteristics Symbol Parameter V(BR)CES Collector-emitter breakdown voltage VCE(sat) VF Collector-emitter saturation voltage Forward on-voltage Test conditions VGE = 0 V, IC = 2 mA Min. Typ. 650 1.6 VGE = 15 V, IC = 40 A, TJ = 125 °C 1.7 VGE = 15 V, IC = 40 A, TJ = 175 °C 1.8 IF = 40 A 1.7 IF = 40 A, TJ = 125 °C 1.4 IF = 40 A, TJ = 175 °C 1.3 Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current IGES Gate-emitter leakage current 5 Unit V VGE = 15 V, IC = 40 A VGE(th) Max. 6 2 V 2.45 V 7 V VGE = 0 V, VCE = 650 V 25 µA VCE = 0 V, VGE = ±20 V ±250 µA Unit Table 4. Dynamic characteristics Symbol DS11520 - Rev 4 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 V VCC = 520 V, IC = 40 A, VGE = 0 to 15 V (see Figure 29. Gate charge test circuit) Min. Typ. Max. - 5412 - - 198 - - 107 - - 210 - - 39 - - 82 - pF nC page 3/15 STGW40H65DFB-4 Electrical characteristics Table 5. IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time - 40 - ns Current rise time - 13 - ns - 2553 - A/µs - 142 - ns - 26 - ns - 200 - µJ Turn-on current slope Turn-off-delay time Current fall time VCE = 400 V, IC = 40 A, VGE = 15 V, RG = 5 Ω (see Figure 28. Test circuit for inductive load switching) (1) Turn-on switching energy Eoff (2) Turn-off switching energy - 410 - µJ Total switching energy - 610 - µJ Turn-on delay time - 40 - ns Current rise time - 14.8 - ns Eon Ets td(on) tr (di/dt)on td(off) tf Turn-on current slope VCE = 400 V, IC = 40 A, - 2216 - A/µs Turn-off-delay time VGE = 15 V, RG = 5 Ω, TJ = 175 °C (see Figure 28. Test circuit for inductive load switching) - 148 - ns - 61 - ns - 472 - µJ Current fall time Eon (1) Turn-on switching energy (2) Turn-off switching energy - 816 - µJ Total switching energy - 1288 - µJ Eoff Ets 1. Including the reverse recovery of the diode. 2. Including the tail of the collector current. Table 6. Diode switching characteristics (inductive load) Symbol DS11520 - Rev 4 Parameter Test conditions Min. Typ. Max. Unit - 62 - ns - 99 - nC - 3.3 - A - 187 - A/µs trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current dIrr/dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy - 68 - µJ trr Reverse recovery time - 310 - ns Qrr Reverse recovery charge IF = 40 A, VR = 400 V, - 1550 - nC Irrm Reverse recovery current - 10 - A dIrr/dt Peak rate of fall of reverse recovery current during tb VGE = 15 V, TJ = 175 °C, di/dt = 100 A/µs (see Figure 28. Test circuit for inductive load switching) - 70 - A/µs Err Reverse recovery energy - 674 - µJ IF = 40 A, VR = 400 V, VGE = 15 V, di/dt = 100 A/µs (see Figure 28. Test circuit for inductive load switching) page 4/15 STGW40H65DFB-4 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Power dissipation vs case temperature PTOT (W) IGBT230216EWF6GPDT VGE = 15 V, TJ ≤ 175 °C 250 Figure 2. Collector current vs case temperature IC (A) IGBT230216EWF6GCCT VGE = 15 V, TJ ≤ 175 °C 80 200 60 150 40 100 20 50 0 0 25 50 75 100 125 150 TC (°C) Figure 3. Output characteristics (TJ = 25 °C) IC (A) IGBT230216EWF6GOC25 VGE = 15 V 140 0 0 11 V 80 IC (A) 125 40 40 20 20 2 3 4 VCE (V) Figure 5. VCE(sat) vs junction temperature VCE(SAT) (V) IGBT230216EWF6GVCET VGE = 15 V TC (°C) IGBT230216EWF6GOC175 VGE = 15 V 13 V 11 V 9V 80 9V 1 150 100 60 IC = 80 A 7V 0 0 1 2 3 4 VCE (V) Figure 6. VCE(sat) vs collector current VCE(SAT) (V) 2.4 IGBT230216EWF6GVCEC VGE = 15 V TJ = 175 °C 2.2 2.2 2.0 2.0 TJ = 25 °C 1.8 IC = 40 A 1.8 1.6 1.6 TJ = -40 °C 1.4 1.4 DS11520 - Rev 4 100 Figure 4. Output characteristics (TJ = 175 °C) 60 1.2 -75 75 120 100 2.4 50 140 13 V 120 0 0 25 1.2 IC = 20 A -25 25 75 125 175 TJ (°C) 1.0 0 10 20 30 40 50 60 70 IC (A) page 5/15 STGW40H65DFB-4 Electrical characteristics (curves) Figure 7. Collector current vs switching frequency IC (A) IGBT230216EWF6GCCS Figure 8. Forward bias safe operating area IC (A) IGBT230216EWF6GFSOA 100 80 10 2 TC = 80 °C 60 TC = 100 °C tp = 10 µs 10 1 40 tp = 100 µs 20 Rectangular current shape (duty cycle = 0.5, VCC = 400 V RG = 5 Ω, VGE = 0/15 V , TJ = 175 °C 0 10 0 10 1 f (kHz) 10 2 Figure 9. Transfer characteristics IC (A) 140 IGBT230216EWF6GTCH VCE = 5 V TJ = 175 °C 100 80 60 10 1 tp = 1 ms VCE (V) 10 2 Figure 10. Diode VF vs forward current VF (V) IGBT230216EWF6GDVF TJ = -40 °C 2.3 TJ = 25 °C 120 single pulse, TC = 25°C TJ ≤ 175 °C, VGE = 15 V 10 0 10 0 2.0 TJ = 25 °C 1.7 TJ = 175 °C TJ = 175 °C 1.4 40 TJ = 25 °C 20 0 6 7 8 9 1.1 10 VGE (V) Figure 11. Normalized VGE(th) vs junction temperature VGE(th) (Norm.) IGBT230216EWF6GNVGE 30 40 50 60 70 80 IF (A) Figure 12. Normalized V(BR)CES vs junction temperature V(BR)CES (Norm.) IGBT230216EWF6GNVBR IC = 2 mA 1.12 VCE = VGE , IC = 1 mA 1.2 0.8 20 1.08 1.0 1.04 1.00 0.8 0.96 0.6 0.4 -75 DS11520 - Rev 4 0.92 -25 25 75 125 175 TJ (°C) 0.88 -75 -25 25 75 125 175 TJ (°C) page 6/15 STGW40H65DFB-4 Electrical characteristics (curves) Figure 13. Capacitance variations C (pF) IGBT230216EWF6GCVR CIES Figure 14. Gate charge vs gate-emitter voltage VGE (V) IGBT230216EWF6GGCGE VCC = 520 V, IC = 40 A 15 10 3 10 10 2 COES 5 CRES 10 1 10 -1 10 0 10 1 10 2 VCE (V) Figure 15. Switching energy vs collector current E (μJ) IGBT100320171332SLC VGE = 15 V, TJ = 175 °C, VCC = 400 V, RG = 5 Ω 0 0 40 80 120 160 200 Qg (nC) Figure 16. Switching energy vs gate resistance E (μJ) IGBT100320171333SLG VGE = 15 V, TJ = 175 °C, VCC = 400 V, IC = 40 A 1000 1500 Eoff Eoff 1000 800 Eon Eon 500 0 0 20 40 600 60 IC (A) Figure 17. Switching energy vs temperature E (μJ) IGBT100320171333SLT VGE = 15 V, RG = 5 Ω, VCC = 400 V, IC = 40 A 400 0 4 8 12 16 20 RG (Ω) Figure 18. Switching energy vs collector emitter voltage E (μJ) IGBT100320171334SLV VGE = 15 V, RG = 5 Ω, TJ = 175 °C, IC = 40 A 1000 700 Eoff 800 500 Eon 600 300 100 0 DS11520 - Rev 4 Eoff Eon 400 50 100 150 TJ (°C) 200 150 300 450 VCE (V) page 7/15 STGW40H65DFB-4 Electrical characteristics (curves) Figure 19. Switching times vs collector current t (ns) IGBT100320171334STC Figure 20. Switching times vs gate resistance IGBT100320171335STR t (ns) V = 400 V, V = 15 V, CC GE IC = 40 A, TJ = 175 °C td(off) 10 2 td(off) tf 10 2 td(on) tf 10 1 tr td(on) 10 0 VCC = 400 V, VGE = 15 V, RG = 5 Ω, TJ = 175 °C 20 40 60 0 tr IC (A) Figure 21. Reverse recovery current vs diode current slope Irrm (A) IGBT230216EWF6GRRC Vr = 400 V, IF = 40 A 10 1 0 4 8 trr (ns) RG (Ω) IGBT230216EWF6GRRT Vr = 400 V, IF = 40 A 200 150 40 TJ = 25 °C TJ = 175 °C 100 20 TJ = 25 °C 50 0 0 500 1000 1500 2000 2500 di/dt (A/µs) Figure 23. Reverse recovery charge vs diode current slope Qrr (nC) IGBT230216EWF6GRRQ Vr = 400 V, IF = 40 A 4000 0 0 500 1000 1500 2000 2500 di/dt (A/µs) Figure 24. Reverse recovery energy vs diode current slope Err (µJ) IGBT230216EWF6GRRE Vr = 400 V, IF = 40 A 1200 TJ = 175 °C 3000 900 2000 TJ = 175 °C 600 300 TJ = 25 °C 0 0 DS11520 - Rev 4 20 250 TJ = 175 °C 60 1000 16 Figure 22. Reverse recovery time vs diode current slope 300 80 12 500 1000 1500 2000 2500 di/dt (A/µs) 0 0 TJ = 25 °C 500 1000 1500 2000 2500 di/dt (A/µs) page 8/15 STGW40H65DFB-4 Electrical characteristics (curves) Figure 25. Thermal impedance for IGBT K ZthTO2T_A δ = 0.5 δ = 0.2 δ = 0.05 δ = 0.1 δ = 0.02 10 -1 δ = 0.01 Single pulse 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 tp (s) Figure 26. Thermal impedance for diode DS11520 - Rev 4 page 9/15 STGW40H65DFB-4 Test circuits 3 Test circuits Figure 27. Test circuit for inductive load switching Figure 28. Gate charge test circuit VCC A A 12 V C 47 kΩ L=100 μH G E 1 kΩ 100 nF B B 3.3 μF C G 1000 μF VCC Vi ≤ V D.U.T RG K GMAX 2200 µF IG=CONST D.U.T. 100 Ω 2.7 kΩ VG E 47 kΩ PW GND1 (signal ground) GND2 (power ground) 1 kΩ HB650_4_leads GIPG030320161351SA GND1 (signal ground) GND2 (power ground) Figure 30. Diode reverse recovery waveform Figure 29. Switching waveform 90% 10% VG 90% VCE 10% tr(Voff) 10 tcross 90% IC td(on) ton td(off) tr(Ion) 10% tf toff AM01506v1 GADG140820170937SA DS11520 - Rev 4 page 10/15 STGW40H65DFB-4 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO247-4 package information Figure 31. TO247-4 package outline 8405626_2 DS11520 - Rev 4 page 11/15 STGW40H65DFB-4 TO247-4 package information Table 7. TO247-4 mechanical data Dim. mm Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 b1 1.15 b2 0 0.20 c 0.59 0.66 c1 0.58 0.60 0.62 D 20.90 21.00 21.10 D1 16.25 16.55 16.85 D2 1.05 1.20 1.35 D3 24.97 25.12 25.27 E 15.70 15.80 15.90 E1 13.10 13.30 13.50 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 2.44 2.54 2.64 e1 4.98 5.08 5.18 L 19.80 19.92 20.10 P 3.50 3.60 3.70 1.29 1.20 P1 7.40 P2 2.40 Q 5.60 S DS11520 - Rev 4 1.25 2.50 2.60 6.00 6.15 T 9.80 10.20 U 6.00 6.40 page 12/15 STGW40H65DFB-4 Revision history Table 8. Document revision history Date Revision 04-Mar-2016 1 Changes First release Updated Table 6: "IGBT switching characteristics (inductive load)". 13-Mar-2017 2 Updated Section 2.1: "Electrical characteristics (curves)". Minor text changes Updated title in cover page. 17-Aug-2017 3 Updated Table 7: "Diode switching characteristics (inductive load)". Updated Section 4.1: "TO247-4 package information" Minor text changes. Removed maturity status indication from cover page. The document status is production data. 20-Jun-2019 4 Updated title in cover page. Updated Table 1. Absolute maximum ratings. Minor text changes. DS11520 - Rev 4 page 13/15 STGW40H65DFB-4 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.1 TO247-4 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 DS11520 - Rev 4 page 14/15 STGW40H65DFB-4 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS11520 - Rev 4 page 15/15