STGWA40H65DFB
Datasheet
Trench gate field-stop 650 V, 40 A high speed HB series IGBT
Features
•
Maximum junction temperature: TJ = 175 °C
•
•
•
High speed switching series
Minimized tail current
Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A
•
•
•
Tight parameter distribution
Safe paralleling
Positive VCE(sat) temperature coefficient
•
•
Low thermal resistance
Very fast soft recovery antiparallel diode
Applications
•
•
Photovoltaic inverters
High frequency converters
Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an
optimum compromise between conduction and switching loss to maximize the
efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)
temperature coefficient and very tight parameter distribution result in safer paralleling
operation.
Product status link
STGWA40H65DFB
Product summary
Order code
STGWA40H65DFB
Marking
G40H65DFB
Package
TO-247 long leads
Packing
Tube
DS11680 - Rev 2 - June 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
STGWA40H65DFB
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Value
Unit
Collector-emitter voltage (VGE = 0 V)
650
V
Continuous collector current at TC = 25 °C
80
Continuous collector current at TC = 100 °C
40
Pulsed collector current
160
Gate-emitter voltage
±20
Transient gate-emitter voltage
±30
Continuous forward current at TC = 25 °C
80
Continuous forward current at TC = 100 °C
40
IFP (1)
Pulsed forward current
160
A
PTOT
Total power dissipation at TC = 25 °C
283
W
TSTG
Storage temperature range
- 55 to 150
Operating junction temperature range
- 55 to 175
VCES
IC
ICP (1)
VGE
IF
TJ
Parameter
A
A
V
A
°C
1. Pulse width limited by maximum junction temperature.
Table 2. Thermal data
Symbol
DS11680 - Rev 2
Parameter
Value
RthJC
Thermal resistance junction-case IGBT
0.53
RthJC
Thermal resistance junction-case diode
1.14
RthJA
Thermal resistance junction-ambient
Unit
°C/W
50
page 2/16
STGWA40H65DFB
Electrical characteristics
2
Electrical characteristics
TC = 25 °C unless otherwise specified
Table 3. Static characteristics
Symbol
Parameter
V(BR)CES
Collector-emitter
breakdown voltage
VCE(sat)
VF
Collector-emitter
saturation voltage
Forward on-voltage
Test conditions
VGE = 0 V, IC = 2 mA
Min.
Typ.
650
1.6
VGE = 15 V, IC = 40 A,
TJ = 125 °C
1.7
VGE = 15 V, IC = 40 A,
TJ = 175 °C
1.8
IF = 40 A
1.7
IF = 40 A, TJ = 125 °C
1.4
IF = 40 A, TJ = 175 °C
1.3
Gate threshold voltage
VCE = VGE, IC = 1 mA
ICES
Collector cut-off current
IGES
Gate-emitter leakage
current
5
Unit
V
VGE = 15 V, IC = 40 A
VGE(th)
Max.
6
2
V
2.45
V
7
V
VGE = 0 V, VCE = 650 V
25
µA
VCE = 0 V, VGE = ±20 V
±250
nA
Unit
Table 4. Dynamic characteristics
Symbol
Test conditions
Min.
Typ.
Max.
-
5412
-
-
198
-
-
107
-
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer
capacitance
Qg
Total gate charge
VCC = 520 V, IC = 40 A,
-
210
-
Qge
Gate-emitter charge
VGE = 0 to 15 V
-
39
-
Gate-collector charge
(see Figure 28. Gate charge test
circuit)
-
82
-
Qgc
DS11680 - Rev 2
Parameter
VCE= 25 V, f = 1 MHz, VGE = 0 V
pF
nC
page 3/16
STGWA40H65DFB
Electrical characteristics
Table 5. IGBT switching characteristics (inductive load)
Symbol
td(on)
tr
(di/dt)on
td(off)
tf
Parameter
Typ.
Max.
Turn-on delay time
40
-
Current rise time
13
-
2413
-
142
-
27
-
498
-
Turn-on current slope
Turn-off-delay time
Current fall time
Test conditions
Min.
VCE = 400 V, IC = 40 A,
VGE = 15 V, RG = 5 Ω
(see Figure 27. Test circuit for
inductive load switching)
Eon (1)
Turn-on switching energy
Eoff (2)
Turn-off switching energy
363
-
Total switching energy
861
-
Turn-on delay time
38
-
Current rise time
14
-
2186
-
141
-
61
-
1417
-
Ets
td(on)
tr
(di/dt)on
td(off)
tf
Turn-on current slope
Turn-off-delay time
Current fall time
VCE = 400 V, IC = 40 A,
VGE = 15 V, RG = 5 Ω,
TJ = 175 °C
(see Figure 27. Test circuit for
inductive load switching)
Eon (1)
Turn-on switching energy
(2)
Turn-off switching energy
764
-
Total switching energy
2181
-
Eoff
Ets
Unit
ns
A/µs
ns
µJ
ns
A/µs
ns
µJ
1. Including the reverse recovery of the diode.
2. Including the tail of the collector current.
Table 6. Diode switching characteristics (inductive load)
Symbol
DS11680 - Rev 2
Parameter
trr
Reverse recovery time
Qrr
Reverse recovery charge
Irrm
Reverse recovery current
dIrr/dt
Peak rate of fall of
reverse recovery current
during tb
Err
Test conditions
Min.
Typ.
Max.
Unit
-
62
-
ns
-
99
-
nC
IF = 40 A, VR = 400 V, VGE = 15 V
di/dt = 100 A/µs
-
3.3
-
A
(see Figure 27. Test circuit for
inductive load switching)
-
187
-
A/µs
Reverse recovery energy
-
68
-
µJ
trr
Reverse recovery time
-
310
-
ns
Qrr
Reverse recovery charge
Irrm
Reverse recovery current
dIrr/dt
Peak rate of fall of
reverse recovery current
during tb
Err
Reverse recovery energy
IF = 40 A, VR = 400 V,
VGE = 15 V, TJ = 175 °C di/
dt = 100 A/µs
-
1550
-
nC
-
10
-
A
(see Figure 27. Test circuit for
inductive load switching)
-
70
-
A/µs
-
674
-
µJ
page 4/16
STGWA40H65DFB
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Power dissipation vs case temperature
PTOT
(W)
IGBT230216EWF6GPDT
VGE = 15 V, TJ ≤ 175 °C
250
Figure 2. Collector current vs case temperature
IC
(A)
IGBT230216EWF6GCCT
VGE = 15 V, TJ ≤ 175 °C
80
200
60
150
40
100
20
50
0
0
25
50
75
100
125
150
TC (°C)
Figure 3. Output characteristics (TJ = 25 °C)
IC
(A)
IGBT230216EWF6GOC25
VGE = 15 V
140
0
0
11 V
80
IC
(A)
125
40
40
20
20
2
3
4
VCE (V)
Figure 5. VCE(sat) vs junction temperature
VCE(SAT)
(V)
IGBT230216EWF6GVCET
VGE = 15 V
TC (°C)
IGBT230216EWF6GOC175
VGE = 15 V
13 V
11 V
9V
80
9V
1
150
100
60
IC = 80 A
7V
0
0
1
2
3
4
VCE (V)
Figure 6. VCE(sat) vs collector current
VCE(SAT)
(V)
2.4
IGBT230216EWF6GVCEC
VGE = 15 V
TJ = 175 °C
2.2
2.2
2.0
2.0
TJ = 25 °C
1.8
IC = 40 A
1.8
1.6
1.6
TJ = -40 °C
1.4
1.4
DS11680 - Rev 2
100
Figure 4. Output characteristics (TJ = 175 °C)
60
1.2
-75
75
120
100
2.4
50
140
13 V
120
0
0
25
1.2
IC = 20 A
-25
25
75
125
175
TJ (°C)
1.0
0
10
20
30
40
50
60
70
IC (A)
page 5/16
STGWA40H65DFB
Electrical characteristics (curves)
Figure 7. Collector current vs switching frequency
IC
(A)
IGBT230216EWF6GCCS
Figure 8. Forward bias safe operating area
IC
(A)
IGBT230216EWF6GFSOA
100
80
10 2
TC = 80 °C
60
TC = 100 °C
tp = 10 µs
10 1
40
tp = 100 µs
20
Rectangular current shape
(duty cycle = 0.5, VCC = 400 V
RG = 5 Ω, VGE = 0/15 V , TJ = 175 °C
0
10 0
10 1
f (kHz)
10 2
Figure 9. Transfer characteristics
IC
(A)
140
IGBT230216EWF6GTCH
VCE = 5 V
TJ = 175 °C
100
80
60
10 1
tp = 1 ms
VCE (V)
10 2
Figure 10. Diode VF vs forward current
VF
(V)
IGBT230216EWF6GDVF
TJ = -40 °C
2.3
TJ = 25 °C
120
single pulse, TC = 25°C
TJ ≤ 175 °C, VGE = 15 V
10 0
10 0
2.0
TJ = 25 °C
1.7
TJ = 175 °C
TJ = 175 °C
1.4
40
TJ = 25 °C
20
0
6
7
8
9
1.1
10
VGE (V)
Figure 11. Normalized VGE(th) vs junction temperature
VGE(th)
(Norm.)
IGBT230216EWF6GNVGE
30
40
50
60
70
80
IF (A)
Figure 12. Normalized V(BR)CES vs junction temperature
V(BR)CES
(Norm.)
IGBT230216EWF6GNVBR
IC = 2 mA
1.12
VCE = VGE , IC = 1 mA
1.2
0.8
20
1.08
1.0
1.04
1.00
0.8
0.96
0.6
0.4
-75
DS11680 - Rev 2
0.92
-25
25
75
125
175
TJ (°C)
0.88
-75
-25
25
75
125
175
TJ (°C)
page 6/16
STGWA40H65DFB
Electrical characteristics (curves)
Figure 13. Capacitance variations
C
(pF)
IGBT230216EWF6GCVR
CIES
Figure 14. Gate charge vs gate-emitter voltage
VGE
(V)
IGBT230216EWF6GGCGE
VCC = 520 V, IC = 40 A
15
10 3
10
10 2
COES
5
CRES
10 1
10 -1
10 0
10 1
VCE (V)
10 2
Figure 15. Switching energy vs collector current
E
(µJ)
IGBT230216EWF6GSLC
VGE = 15 V, TJ = 175 °C
VCC = 400 V, RG = 5 Ω
3000
2400
0
0
40
80
120
160
Qg (nC)
Figure 16. Switching energy vs gate resistance
E
(µJ)
IGBT230216EWF6GSLG
VCC = 400 V, IC = 40 A
VGE = 15 V, TJ = 175 °C
2000
Eon
200
Eon
1600
1800
1200
Eoff
1200
0
0
10
20
30
40
50
60
70
IC (A)
Figure 17. Switching energy vs temperature
E
(μJ)
Eoff
800
600
IGBT230216EWF6GSLT
VCC = 400 V, IC = 40 A
RG = 5 Ω, VGE = 15 V
Eon
400
0
4
8
12
16
20
RG (Ω)
Figure 18. Switching energy vs collector emitter voltage
E
(µJ)
2000
IGBT230216EWF6GSLV
VGE = 15 V, TJ = 175 °C
IC = 40 A, RG = 5 Ω
Eon
1200
1600
800
1200
Eoff
Eoff
800
400
400
0
-75
DS11680 - Rev 2
-25
25
75
125
175
TJ (°C)
0
150 200 250 300 350 400 450 500 VCE (V)
page 7/16
STGWA40H65DFB
Electrical characteristics (curves)
Figure 19. Switching times vs collector current
t
(ns)
IGBT230216EWF6GSTC
VCC = 400 V, VGE = 15 V
RG = 5 Ω, TJ = 175 °C
Figure 20. Switching times vs gate resistance
t
(ns)
IGBT230216EWF6GSTR
VCC = 400 V, VGE = 15 V
IC = 40 A, TJ = 175 °C
t d(off)
td(off)
10 2
tf
t d(on)
10 2
tr
10
tf
td(on)
1
tr
10 0
0
10
20
30
40
50
60
70
IC (A)
Figure 21. Reverse recovery current vs diode current
slope
Irrm
(A)
IGBT230216EWF6GRRC
Vr = 400 V, IF = 40 A
10 1
0
4
8
trr
(ns)
RG (Ω)
IGBT230216EWF6GRRT
Vr = 400 V, IF = 40 A
200
150
40
TJ = 25 °C
TJ = 175 °C
100
20
TJ = 25 °C
50
0
0
500
1000 1500 2000 2500
di/dt (A/µs)
Figure 23. Reverse recovery charge vs diode current
slope
Qrr
(nC)
IGBT230216EWF6GRRQ
Vr = 400 V, IF = 40 A
4000
0
0
500
1000 1500 2000 2500
di/dt (A/µs)
Figure 24. Reverse recovery energy vs diode current
slope
Err
(µJ)
IGBT230216EWF6GRRE
Vr = 400 V, IF = 40 A
1200
TJ = 175 °C
3000
900
2000
TJ = 175 °C
600
300
TJ = 25 °C
0
0
DS11680 - Rev 2
20
250
TJ = 175 °C
60
1000
16
Figure 22. Reverse recovery time vs diode current slope
300
80
12
500
1000 1500 2000 2500
di/dt (A/µs)
0
0
TJ = 25 °C
500
1000 1500 2000 2500
di/dt (A/µs)
page 8/16
STGWA40H65DFB
Electrical characteristics (curves)
Figure 25. Thermal impedance for IGBT
K
ZthTO2T_A
δ = 0.5
δ = 0.2
δ = 0.05
δ = 0.1
δ = 0.02
10 -1
δ = 0.01
Single pulse
10 -2
10 -5
10 -4
10 -3
10 -2
10 -1
tp (s)
Figure 26. Thermal impedance for diode
DS11680 - Rev 2
page 9/16
STGWA40H65DFB
Test circuits
3
Test circuits
Figure 28. Gate charge test circuit
Figure 27. Test circuit for inductive load switching
C
A
A
k
L=100 µH
G
E
B
B
3.3
µF
C
G
+
k
RG
1000
µF
VCC
k
D.U.T
k
E
k
k
AM01505v1
AM01504v1
Figure 30. Diode reverse recovery waveform
Figure 29. Switching waveform
di/dt
IF
90%
Qrr
trr
ts
tf
10%
VG
VCE
10%
tr(Voff)
10%
IRRM
tcross
VRRM
90%
IC
td(on)
ton
td(off)
tr(Ion)
t
IRRM
90%
10%
tf
toff
dv/dt
AM01506v1
DS11680 - Rev 2
GADG180720171418SA
page 10/16
STGWA40H65DFB
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
DS11680 - Rev 2
page 11/16
STGWA40H65DFB
TO-247 long leads package information
4.1
TO-247 long leads package information
Figure 31. TO-247 long leads package outline
8463846_2_F
DS11680 - Rev 2
page 12/16
STGWA40H65DFB
TO-247 long leads package information
Table 7. TO-247 long leads package mechanical data
Dim.
mm
Min.
Typ.
Max.
A
4.90
5.00
5.10
A1
2.31
2.41
2.51
A2
1.90
2.00
2.10
b
1.16
1.26
b2
3.25
b3
2.25
c
0.59
0.66
D
20.90
21.00
21.10
E
15.70
15.80
15.90
E2
4.90
5.00
5.10
E3
2.40
2.50
2.60
e
5.34
5.44
5.54
L
19.80
19.92
20.10
L1
DS11680 - Rev 2
4.30
P
3.50
Q
5.60
S
6.05
3.60
3.70
6.00
6.15
6.25
page 13/16
STGWA40H65DFB
Revision history
Table 8. Document revision history
DS11680 - Rev 2
Date
Revision
06-Jun-2016
1
24-Jun-2019
2
Changes
Initial version. Part number previously included in datasheet DocID024363.
Modified Table 1. Absolute maximum ratings.
Minor text changes.
page 14/16
STGWA40H65DFB
Contents
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2
Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
4
Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.1
TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
DS11680 - Rev 2
page 15/16
STGWA40H65DFB
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© 2019 STMicroelectronics – All rights reserved
DS11680 - Rev 2
page 16/16