STGFW40H65FB, STGW40H65FB,
STGWA40H65FB
Datasheet
Trench gate field-stop 650 V, 40 A high speed HB series IGBT
Features
TO-3PF
1
2
1
3
2
3
TO-247
1
2
3
TO-247 long leads
•
Maximum junction temperature: TJ = 175 °C
•
•
•
High speed switching series
Minimized tail current
Very low saturation voltage: VCE(sat) = 1.6 V (typ) @ IC = 40 A
•
•
•
Safe paralleling
Tight parameter distribution
Low thermal resistance
C(2, TAB)
Applications
•
•
•
•
•
G(1)
E(3)
Welding
Power factor correction
UPS
Solar inverters
Chargers
G1C2TE3
Description
These devices are IGBTs developed using an advanced proprietary trench gate
field-stop structure. These devices are part of the new HB series of IGBTs, which
represent an optimum compromise between conduction and switching loss to
maximize the efficiency of any frequency converter. Furthermore, the slightly positive
VCE(sat) temperature coefficient and very tight parameter distribution result in safer
paralleling operation.
Product status link
STGFW40H65FB
STGW40H65FB
STGWA40H65FB
DS9908 - Rev 8 - March 2021
For further information contact your local STMicroelectronics sales office.
www.st.com
STGFW40H65FB, STGW40H65FB, STGWA40H65FB
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
VCES
Value
Parameter
TO-247, TO-247 long leads
TO-3PF
Unit
Collector-emitter voltage (VGE = 0 V)
650
Continuous collector current at TC = 25 °C
80
Continuous collector current at TC = 100 °C
40
Pulsed collector current
160
A
VGE
Gate-emitter voltage
±20
V
PTOT
Total power dissipation at TC = 25 °C
VISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink
IC
ICP (1)
283
V
A
98.6
W
3.5
kV
(t = 1 s; TC = 25 °C)
TSTG
TJ
Storage temperature range
-55 to 150
°C
Operating junction temperature range
-55 to 175
°C
1. Pulse width is limited by maximum junction temperature.
Table 2. Thermal data
Symbol
DS9908 - Rev 8
Parameter
RthJC
Thermal resistance, junction-to-case
RthJA
Thermal resistance, junction-to-ambient
Value
TO-247, TO-247 long leads
TO-3PF
0.53
1.52
50
Unit
°C/W
°C/W
page 2/20
STGFW40H65FB, STGW40H65FB, STGWA40H65FB
Electrical characteristics
2
Electrical characteristics
TC = 25 °C unless otherwise specified
Table 3. Static characteristics
Symbol
Parameter
Test conditions
V(BR)CES
Collector-emitter breakdown
voltage
VCE(sat)
Collector-emitter saturation
voltage
VGE = 0 V, IC = 2 mA
Min.
Typ.
650
1.6
VGE = 15 V, IC = 40 A, TJ = 125 °C
1.7
VGE = 15 V, IC = 40 A, TJ = 175 °C
1.8
Gate threshold voltage
VCE = VGE, IC = 1 mA
ICES
Collector cut-off current
IGES
Gate-emitter leakage current
5
Unit
V
VGE = 15 V, IC = 40 A
VGE(th)
Max.
6
2
V
7
V
VGE = 0 V, VCE = 650 V
25
µA
VCE = 0 V, VGE = ±20 V
±250
nA
Unit
Table 4. Dynamic characteristics
Symbol
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer capacitance
Qg
DS9908 - Rev 8
Parameter
Test conditions
VCE = 25 V, f = 1 MHz, VGE = 0 V
Total gate charge
Qge
Gate-emitter charge
Qgc
Gate-collector charge
VCC = 520 V, IC = 40 A, VGE = 0 to 15 V
(see Figure 27. Gate charge test circuit)
Min.
Typ.
Max.
-
5412
-
-
198
-
-
107
-
-
210
-
-
39
-
-
82
-
pF
nC
page 3/20
STGFW40H65FB, STGW40H65FB, STGWA40H65FB
Electrical characteristics
Table 5. Switching characteristics (inductive load)
Symbol
td(on)
tr
(di/dt)on
td(off)
tf
Parameter
Min.
Typ.
Max.
Turn-on delay time
-
40
-
Current rise time
-
13
-
Turn-on current slope
-
2413
-
-
142
-
-
27
-
Turn-off delay time
Current fall time
Test conditions
VCE = 400 V, IC = 40 A, VGE = 15 V,
RG = 5 Ω (see Figure 26. Test circuit for
inductive load switching)
Eon (1)
Turn-on switching energy
-
498
-
Eoff (2)
Turn-off switching energy
-
363
-
Total switching energy
-
861
-
Turn-on delay time
-
38
-
Current rise time
-
14
-
-
2186
-
-
141
-
-
61
-
Ets
td(on)
tr
(di/dt)on
td(off)
tf
Turn-on current slope
Turn-off delay time
Current fall time
VCE = 400 V, IC = 40 A, VGE = 15 V,
RG = 5 Ω, TJ = 175 °C (see
Figure 26. Test circuit for inductive load
switching)
Eon (1)
Turn-on switching energy
-
1417
-
Eoff (2)
Turn-off switching energy
-
764
-
Total switching energy
-
2181
-
Ets
Unit
ns
A/µs
ns
µJ
ns
A/µs
ns
µJ
1. Including the reverse recovery of the external diode. The diode is the same of the co-packed STGW40H65DFB.
2. Including the tail of the collector current.
DS9908 - Rev 8
page 4/20
STGFW40H65FB, STGW40H65FB, STGWA40H65FB
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Power dissipation vs. case temperature for
TO-247 and TO-247 long leads
PTOT
(W)
IGBT230216EWF6GPDT
VGE = 15 V, TJ ≤ 175 °C
250
Figure 2. Collector current vs. case temperature for
TO-247 and TO-247 long leads
IC
(A)
IGBT230216EWF6GCCT
VGE = 15 V, TJ ≤ 175 °C
80
200
60
150
40
100
20
50
0
0
25
50
75
100
125
150
TC (°C)
Figure 3. Power dissipation vs. case temperature for
TO-3PF
PTOT
[W]
GADG250220211536MT
0
0
25
50
100
125
150
TC (°C)
Figure 4. Collector current vs. case temperature for
TO-3PF
IC
[A]
GADG250220211537MT
40
90
75
VGE = 15 V, TJ ≤ 175 °C
VGE = 15 V, TJ ≤ 175 °C
30
60
20
30
10
0
25
75
125
175
TC °[C]
Figure 5. Output characteristics (TJ = 25 °C)
IC
(A)
IGBT230216EWF6GOC25
VGE = 15 V
140
0
25
175
11 V
80
IC
(A)
IGBT230216EWF6GOC175
VGE = 15 V
13 V
60
40
40
20
20
3
9V
80
60
2
11 V
100
9V
1
TC [°C]
Figure 6. Output characteristics (TJ = 175 °C)
120
100
DS9908 - Rev 8
125
140
13 V
120
0
0
75
4
VCE (V)
0
0
7V
1
2
3
4
VCE (V)
page 5/20
STGFW40H65FB, STGW40H65FB, STGWA40H65FB
Electrical characteristics (curves)
Figure 7. VCE(sat) vs. junction temperature
VCE(SAT)
(V)
VCE(SAT)
(V)
IGBT230216EWF6GVCET
VGE = 15 V
2.4
IC = 80 A
IGBT230216EWF6GVCEC
VGE = 15 V
2.4
TJ = 175 °C
2.2
2.2
2.0
2.0
TJ = 25 °C
1.8
IC = 40 A
1.8
1.6
1.6
TJ = -40 °C
1.4
1.4
1.2
IC = 20 A
1.2
-75
-25
25
75
125
175
TJ (°C)
Figure 9. Collector current vs. switching frequency for
TO-247 and TO-247 long leads
IC
(A)
1.0
0
10
20
30
40
50
60
70
IC (A)
Figure 10. Collector current vs. switching frequency for
TO-3PF
IC
[A]
IGBT230216EWF6GCCS
100
GADG250220211539MT
50
80
TC = 80 ºC
40
TC = 80 °C
60
30
TC = 100 °C
40
20
Figure 8. VCE(sat) vs. collector current
TC = 100 ºC
20
10
Rectangular current shape
(duty cycle = 0.5, VCC = 400 V
RG = 5 Ω, VGE = 0/15 V , TJ = 175 °C
0
10 0
10 1
10 2
f (kHz)
Figure 11. Forward bias safe operating area for TO-247
and TO-247 long leads
IC
(A)
Rectangular current shape
(duty cycle = 0.5, VCC = 400 V, RG = 5 Ω,
VGE= 0/15 V , TJ = 175 °C
0
10 0
10 1
10 2
Figure 12. Forward bias safe operating area for TO-3PF
IC
(A)
IGBT230216EWF6GFSOA
f (kHz)
GADG250220211538SOA
10 2
10 2
tp =10 µs
10 1
tp =100 µs
tp = 10 µs
tp =1 ms
10 1
tp = 100 µs
10
single pulse, TC = 25°C
TJ ≤ 175 °C, VGE = 15 V
0
10
DS9908 - Rev 8
0
10
1
10
2
tp = 1 ms
VCE (V)
10 0
10 -1
10 0
single pulse
TC=25 °C
TJ≤175 °C
VGE=15 V
10 1
101
10 2
VCE (V)
page 6/20
STGFW40H65FB, STGW40H65FB, STGWA40H65FB
Electrical characteristics (curves)
Figure 13. Transfer characteristics
IC
(A)
140
IGBT230216EWF6GTCH
VCE = 5 V
VGE(th)
(Norm.)
IGBT230216EWF6GNVGE
VCE = VGE , IC = 1 mA
1.2
TJ = 25 °C
120
Figure 14. Normalized VGE(th) vs. junction temperature
TJ = 175 °C
100
1.0
80
60
TJ = 175 °C
0.8
40
0
6
0.6
TJ = 25 °C
20
7
8
9
10
VGE (V)
0.4
-75
Figure 15. Normalized V(BR)CES vs. junction temperature
V(BR)CES
(Norm.)
IGBT230216EWF6GNVBR
-25
25
75
125
175
TJ (°C)
Figure 16. Capacitance variation
C
(pF)
IGBT230216EWF6GCVR
CIES
IC = 2 mA
1.12
1.08
10 3
1.04
1.00
10 2
0.96
COES
CRES
0.92
0.88
-75
-25
25
75
125
175
TJ (°C)
Figure 17. Gate charge vs. gate-emitter voltage
VGE
(V)
IGBT230216EWF6GGCGE
VCC = 520 V, IC = 40 A
10 1
10 -1
10 0
10 1
VCE (V)
10 2
Figure 18. Switching energy vs. collector current
E
(µJ)
IGBT230216EWF6GSLC
VGE = 15 V, TJ = 175 °C
VCC = 400 V, RG = 5 Ω
3000
15
2400
10
Eon
1800
Eoff
1200
5
600
0
0
DS9908 - Rev 8
40
80
120
160
200
Qg (nC)
0
0
10
20
30
40
50
60
70
IC (A)
page 7/20
STGFW40H65FB, STGW40H65FB, STGWA40H65FB
Electrical characteristics (curves)
Figure 19. Switching energy vs. gate resistance
E
(µJ)
Figure 20. Switching energy vs. temperature
E
(μJ)
IGBT230216EWF6GSLG
VCC = 400 V, IC = 40 A
VGE = 15 V, TJ = 175 °C
2000
Eon
IGBT230216EWF6GSLT
Eon
VCC = 400 V, IC = 40 A
RG = 5 Ω, VGE = 15 V
1200
1600
800
Eoff
1200
Eoff
800
400
0
4
8
12
16
20
400
0
-75
RG (Ω)
Figure 21. Switching energy vs. collector emitter voltage
E
(µJ)
2000
25
75
125
175
TJ (°C)
Figure 22. Switching times vs. collector current
t
(ns)
IGBT230216EWF6GSLV
VGE = 15 V, TJ = 175 °C
IC = 40 A, RG = 5 Ω
-25
Eon
IGBT230216EWF6GSTC
VCC = 400 V, VGE = 15 V
RG = 5 Ω, TJ = 175 °C
t d(off)
10 2
1600
1200
tf
t d(on)
tr
Eoff
10 1
800
400
10 0
0
150 200 250 300 350 400 450 500 VCE (V)
0
10
20
30
40
50
60
70
IC (A)
Figure 23. Switching times vs. gate resistance
t
(ns)
IGBT230216EWF6GSTR
VCC = 400 V, VGE = 15 V
IC = 40 A, TJ = 175 °C
td(off)
10 2
tf
td(on)
tr
10 1
DS9908 - Rev 8
0
4
8
12
16
20
RG (Ω)
page 8/20
STGFW40H65FB, STGW40H65FB, STGWA40H65FB
Electrical characteristics (curves)
Figure 24. Thermal impedance for TO-247 and TO-247 long leads
ZthTO2T_A
K
δ = 0.5
δ = 0.2
δ = 0.05
δ = 0.1
δ = 0.02
10-1
δ = 0.01
Single pulse
10-2
10-5
10-4
10-3
10-2
10-1
tp (s)
Figure 25. Thermal impedance for TO-3PF
ZthTOF3T_A
K
δ=0.5
0.2
0.1
0.05
-1
10
0.02
Zth = k*RthJC
δ = tp/t
0.01
Single pulse
tp
t
-2
10
DS9908 - Rev 8
-5
10
-4
10
-3
10
-2
10
-1
10
10
tp (s)
page 9/20
STGFW40H65FB, STGW40H65FB, STGWA40H65FB
Test circuits
3
Test circuits
Figure 27. Gate charge test circuit
Figure 26. Test circuit for inductive load switching
C
A
A
k
L=100 µH
G
E
B
B
RG
3.3
µF
C
G
+
k
1000
µF
VCC
k
D.U.T
k
E
k
k
AM01505v1
AM01504v1
Figure 28. Switching waveform
90%
10%
VG
90%
VCE
10%
tr(Voff)
tcross
90%
IC
td(on)
ton
td(off)
tr(Ion)
10%
tf
toff
AM01506v1
DS9908 - Rev 8
page 10/20
STGFW40H65FB, STGW40H65FB, STGWA40H65FB
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
4.1
TO-3PF package information
Figure 29. TO-3PF package outline
7627132_6
DS9908 - Rev 8
page 11/20
STGFW40H65FB, STGW40H65FB, STGWA40H65FB
TO-3PF package information
Table 6. TO-3PF mechanical data
Dim.
mm
Min.
Max.
A
5.30
5.70
C
2.80
3.20
D
3.10
3.50
D1
1.80
2.20
E
0.80
1.10
F
0.65
0.95
F2
1.80
2.20
G
10.30
11.50
G1
DS9908 - Rev 8
Typ.
5.45
H
15.30
15.70
L
9.80
L2
22.80
23.20
L3
26.30
26.70
L4
43.20
44.40
L5
4.30
4.70
L6
24.30
24.70
L7
14.60
15.00
N
1.80
2.20
R
3.80
4.20
Dia
3.40
3.80
10.00
10.20
page 12/20
STGFW40H65FB, STGW40H65FB, STGWA40H65FB
TO-247 package information
4.2
TO-247 package information
Figure 30. TO-247 package outline
aaa
0075325_10
DS9908 - Rev 8
page 13/20
STGFW40H65FB, STGW40H65FB, STGWA40H65FB
TO-247 package information
Table 7. TO-247 package mechanical data
Dim.
mm
Min.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
L2
5.45
5.60
18.50
ØP
3.55
3.65
ØR
4.50
5.50
S
5.30
aaa
DS9908 - Rev 8
Typ.
5.50
5.70
0.04
0.10
page 14/20
STGFW40H65FB, STGW40H65FB, STGWA40H65FB
TO-247 long leads package information
4.3
TO-247 long leads package information
Figure 31. TO-247 long leads package outline
8463846_2_F
DS9908 - Rev 8
page 15/20
STGFW40H65FB, STGW40H65FB, STGWA40H65FB
TO-247 long leads package information
Table 8. TO-247 long leads package mechanical data
Dim.
mm
Min.
Typ.
Max.
A
4.90
5.00
5.10
A1
2.31
2.41
2.51
A2
1.90
2.00
2.10
b
1.16
1.26
b2
3.25
b3
2.25
c
0.59
0.66
D
20.90
21.00
21.10
E
15.70
15.80
15.90
E2
4.90
5.00
5.10
E3
2.40
2.50
2.60
e
5.34
5.44
5.54
L
19.80
19.92
20.10
L1
DS9908 - Rev 8
4.30
P
3.50
Q
5.60
S
6.05
3.60
3.70
6.00
6.15
6.25
page 16/20
STGFW40H65FB, STGW40H65FB, STGWA40H65FB
Ordering information
5
Ordering information
Table 9. Order codes
DS9908 - Rev 8
Order code
Marking
Package
STGFW40H65FB
GFW40H65FB
TO-3PF
STGW40H65FB
GW40H65FB
TO-247
STGWA40H65FB
GWA40H65FB
TO-247 long leads
Packing
Tube
page 17/20
STGFW40H65FB, STGW40H65FB, STGWA40H65FB
Revision history
Table 10. Document revision history
Date
Revision
Changes
30-Aug-2013
1
Initial release
11-Sep-2013
2
Document status changed from preliminary to production data. Inserted Section 2.1: Electrical
characteristics (curves).
28-Feb-2014
3
Updated title and description in cover page.
05-Mar-2014
4
Updated units in Table 6: Switching characteristics (inductive load).
11-Apr-2014
5
Added part number and references for the device in a TO-3PF package.
6
Updated Section 2.1: Electrical characteristics (curves) and Section 4.3: TO-247 long leads,
package information.
Added device in TO-247 long leads and updated the document accordingly.
03-Nov-2016
Minor text changes.
Updated Table 1: "Device summary".
21-Mar-2017
7
Added Figure 26: "Thermal impedance for TO-3PF".
Minor text changes
The part number STGWT40H65FB has been removed and the document has been updated
accordingly.
09-Mar-2021
8
Updated title in cover page.
Updated Section 1 Electrical ratings and Section 2.1 Electrical characteristics (curves).
Minor text changes
DS9908 - Rev 8
page 18/20
STGFW40H65FB, STGW40H65FB, STGWA40H65FB
Contents
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2
Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
4
Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
5
4.1
TO-3PF package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.2
TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.3
TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
DS9908 - Rev 8
page 19/20
STGFW40H65FB, STGW40H65FB, STGWA40H65FB
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST
products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service
names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2021 STMicroelectronics – All rights reserved
DS9908 - Rev 8
page 20/20