STGW40M120DF3
STGWA40M120DF3
Trench gate field-stop IGBT, M series
1200 V, 40 A low loss
Datasheet - production data
Features
• 10 µs of short-circuit withstand time
• VCE(sat) = 1.85 V (typ.) @ IC = 40 A
• Tight parameters distribution
• Safer paralleling
• Low thermal resistance
• Soft and fast recovery antiparallel diode
Applications
72
72ORQJOHDGV
• Industrial drives
• UPS
• Solar
Figure 1.Internal schematic diagram
& RU7$%
• Welding
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series of
IGBTs, which represent an optimum compromise
in performance to maximize the efficiency of
inverter systems where low-loss and short circuit
capability are essential. Furthermore, a positive
VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
*
(
Table 1. Device summary
Order code
Marking
Package
Packaging
STGW40M120DF3
G40M120DF3
TO-247
Tube
STGWA40M120DF3
G40M120DF3
TO-247 long leads
Tube
November 2014
This is information on a product in full production.
DocID026224 Rev 3
1/18
www.st.com
18
Contents
STGW40M120DF3, STGWA40M120DF3
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5
2/18
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.1
TO-247, STGW40M120DF3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.2
TO-247 long leads, STGWA40M120DF3 . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
DocID026224 Rev 3
STGW40M120DF3, STGWA40M120DF3
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
VCES
Parameter
Collector-emitter voltage (VGE = 0)
Value
Unit
1200
V
IC
Continuous collector current at TC = 25 °C
80
A
IC
Continuous collector current at TC = 100 °C
40
A
ICP(1)
Pulsed collector current
160
A
VGE
Gate-emitter voltage
±20
V
IF
Continuous forward current at TC = 25 °C
80
A
IF
Continuous forward current at TC = 100 °C
40
A
IFP(1)
Pulsed forward current
160
A
PTOT
Total dissipation at TC = 25 °C
468
W
TSTG
Storage temperature range
- 55 to 150
°C
Operating junction temperature
- 55 to 175
°C
Value
Unit
TJ
1. Pulse width limited by maximum junction temperature.
Table 3. Thermal data
Symbol
Parameter
RthJC
Thermal resistance junction-case IGBT
0.32
°C/W
RthJC
Thermal resistance junction-case diode
0.74
°C/W
RthJA
Thermal resistance junction-ambient
50
°C/W
DocID026224 Rev 3
3/18
Electrical characteristics
2
STGW40M120DF3, STGWA40M120DF3
Electrical characteristics
TJ = 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol
Parameter
Test conditions
Collector-emitter
V(BR)CES breakdown voltage
(VGE = 0)
IC = 2 mA
Min.
VF
Unit
V
1.85
VGE = 15 V, IC = 40 A,
Collector-emitter saturation
TJ = 125 °C
voltage
VGE = 15 V, IC = 40 A
TJ = 175 °C
Forward on-voltage
Max.
1200
VGE = 15 V, IC = 40 A
VCE(sat)
Typ.
2.3
2.2
V
2.3
IF = 40 A
2.85
IF = 40 A TJ = 125 °C
2.25
V
IF = 40 A TJ = 175 °C
2.1
V
VGE(th)
Gate threshold voltage
VCE = VGE, IC = 2 mA
ICES
Collector cut-off current
(VGE = 0)
IGES
Gate-emitter leakage
current (VCE = 0)
5
6
3.95
V
7
V
VCE = 1200 V
25
µA
VGE = ± 20 V
250
nA
Table 5. Dynamic characteristics
Symbol
4/18
Parameter
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer
capacitance
Qg
Total gate charge
Test conditions
VCE = 25 V, f = 1 MHz,
VGE = 0
VCC = 960 V, IC =40 A,
VGE = 15 V, see Figure 30
Qge
Gate-emitter charge
Qgc
Gate-collector charge
DocID026224 Rev 3
Min.
Typ.
Max.
Unit
-
2500
-
pF
-
275
-
pF
-
95
-
pF
-
125
-
nC
-
15
-
nC
-
75
-
nC
STGW40M120DF3, STGWA40M120DF3
Electrical characteristics
Table 6. IGBT switching characteristics (inductive load)
Symbol
td(on)
tr
(di/dt)on
td(off)
tf
Test conditions
Min.
Typ.
Max.
Unit
Turn-on delay time
-
35
-
ns
Current rise time
-
15
-
ns
-
2100
-
A/µs
-
140
-
ns
-
135
-
ns
Turn-on current slope
VCE = 600 V, IC = 40 A,
VGE = 15 V, RG= 10 Ω
see Figure 29
Turn-off delay time
Current fall time
Eon(1)
Turn-on switching losses
-
1.5
-
mJ
Eoff(2)
Turn-off switching losses
-
2.25
-
mJ
Total switching losses
-
3.75
-
mJ
Turn-on delay time
-
35
-
ns
Current rise time
-
18
-
ns
Turn-on current slope
-
1800
-
A/µs
-
150
-
ns
-
240
-
ns
Ets
td(on)
tr
(di/dt)on
td(off)
tf
1.
Parameter
VCE = 600 V, IC = 40 A,
RG= 10 Ω, VGE = 15 V,
TJ = 175 °C, see Figure 29
Turn-off delay time
Current fall time
Eon(1)
Turn-on switching losses
-
2.8
-
mJ
Eoff(2)
Turn-off switching losses
-
3.45
-
mJ
Ets
Total switching losses
-
6.25
-
mJ
tsc
Short-circuit withstand time
-
µs
VCC ≤ 600V, VGE= 15V,
TJstart= 150°C
10
Energy losses include reverse recovery of the diode.
2. Turn-off losses include also the tail of the collector current.
Table 7. Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
trr
Reverse recovery time
Qrr
Reverse recovery charge
IF = 40 A, VR = 600 V,
VGE = 15 V, see Figure 29
di/dt = 1000 A/µs
Min.
Typ.
Max.
Unit
-
355
-
ns
-
2575
-
nC
-
25
-
A
-
1110
-
A/µs
Irrm
Reverse recovery current
dIrr/ /dt
Peak rate of fall of reverse
recovery current during tb
Err
Reverse recovery energy
-
1.12
-
mJ
trr
Reverse recovery time
-
667
-
ns
Qrr
Reverse recovery charge
-
8500
-
nC
Irrm
Reverse recovery current
-
37
-
A
dIrr/ /dt
Peak rate of fall of reverse
recovery current during tb
-
450
-
A/µs
Err
Reverse recovery energy
-
3.9
-
mJ
IF = 40 A, VR = 600 V,
VGE = 15 V, TJ = 175 °C,
see Figure 29
di/dt = 1000 A/µs
DocID026224 Rev 3
5/18
Electrical characteristics
2.1
STGW40M120DF3, STGWA40M120DF3
Electrical characteristics (curves)
Figure 2. Power dissipation vs. case
temperature
*,3' )65
3WRW
:
9*(97 -&
Figure 3. Collector current vs. case temperature
7& &
Figure 4. Output characteristics (TJ = 25°C)
*,3' )65
,&
$
9*( 9
9
7& &
*,3' )65
,&
$
9*( 9
9
9
Figure 5. Output characteristics (TJ = 175°C)
9*(97 -&
*,3' )65
,&
$
9
9
9
9&( 9
Figure 6. VCE(sat) vs. junction temperature
*,3' )65
9&( VDW
9
,& $
9*( 9
9
9&( 9
Figure 7. VCE(sat) vs. collector current
*,3' )65
9&( VDW
9
9*( 9
7- &
7- &
,& $
,& $
6/18
7- &
7- &
DocID026224 Rev 3
,& $
STGW40M120DF3, STGWA40M120DF3
Electrical characteristics
Figure 8. Collector current vs. switching
frequency
*,3' )65
,F $
Figure 9. Forward bias safe operating area
*,3' )65
,&
$
7F &
V
7F &
V
V
UHFWDQJXODUFXUUHQWVKDSH
GXW\F\FOH 9&& 95*
9*( 97- &
6LQJOHSXOVH7& &
9*( 97 -&
Figure 10. Transfer characteristics
*,3' )65
,&
$
I>N+]@
PV
9&( 9
Figure 11. Diode VF vs. forward current
*,3' )65
9) 9
7- &
9&( 9
7- &
7- &
7- &
7- &
Figure 12. Normalized VGE(th) vs junction
temperature
*,3' )65
9*( WK
QRUP
,& P$
9&( 9*(
9*( 9
,) $
Figure 13. Normalized V(BR)CES vs. junction
temperature
*,3' )65
9 %5 &(6
QRUP
,& P$
7- &
DocID026224 Rev 3
7- &
7/18
Electrical characteristics
STGW40M120DF3, STGWA40M120DF3
Figure 14. Capacitance variation
Figure 15. Gate charge vs. gate-emitter voltage
*,3' )65
&
S)
*,3' )65
9*(
9
&LHV
,& $
,*( P$
9&& 9
&RHV
&UHV
I 0+]9*(
9&( 9
Figure 16. Switching loss vs collector current
(
-
*,3' )65
9&& 99 *( 9
5* ȍ7- &
4J Q&
Figure 17. Switching loss vs gate resistance
*,3' )65
(
-
9&& 99 *( 9
,& $7 - &
(2))
(2))
(21
(21
,& $
Figure 18. Switching loss vs temperature
(
-
5* ȍ
Figure 19. Switching loss vs collector-emitter
voltage
*,3' )65
9&& 99 *( 9
5* ȍ,& $
(
-
*,3' )65
7- &9*( 9
5* ȍ,& $
(2))
(21
(2))
8/18
7- &
DocID026224 Rev 3
(21
9&( 9
STGW40M120DF3, STGWA40M120DF3
Electrical characteristics
Figure 20. Short circuit time and current vs VGE Figure 21. Switching times vs collector current
*,3' )65
,6&
WVF
V
9&&97-&
,6& $
W6&
*,3' )65
W
QV
7- &9*( 9
5* ȍ9&& 9
WI
WGRII
WGRQ
WU
Figure 22. Switching times vs. gate resistance
W
QV
9*( 9
WGRII
,UP
$
WI
WGRQ
,& $
Figure 23. Reverse recovery current vs. diode
current slope
*,3' )65
7- &9*( 9
,& $9&& 9
*,3' )65
,) $9&& 9
9*( 9
7- &
WU
5* ȍ
Figure 24. Reverse recovery time vs. diode
current slope
4UU
Q&
7
&& 9
,) $9
9*( 9
GLGW $V
Figure 25. Reverse recovery charge vs. diode
current slope
*,3' )65
WUU
QV
*,3' )65
,) $9&& 9
9*( 9
7- &
7- &
GLGW $V
DocID026224 Rev 3
GLGW $V
9/18
Electrical characteristics
STGW40M120DF3, STGWA40M120DF3
T
Figure 26. Reverse recovery energy vs. diode
current slope
*,3' )65
(UU
-
,) $9&& 9
9*( 9
7-
10/18
&
GLGW $V
DocID026224 Rev 3
STGW40M120DF3, STGWA40M120DF3
Electrical characteristics
Figure 27.Thermal data for IGBT
ZthTO2T_A
K
d=0.5
0.2
0.1
10-1
0.05
0.02
0.01
Single pulse
10-2
10-5
10-4
10-3
10-2
10-1
tp (s)
Figure 28.Thermal data for diode
DocID026224 Rev 3
11/18
Test circuits
3
STGW40M120DF3, STGWA40M120DF3
Test circuits
Figure 29. Test circuit for inductive load
switching
Figure 30. Gate charge test circuit
k
k
k
k
k
k
AM01504v1
Figure 31. Switching waveform
AM01505v1
Figure 32. Diode recovery times waveform
90%
VG
IF
trr
90%
VCE
Qrr
di/dt
10%
ts
tf
10%
Tr(Voff)
Tcross
10% IRRM
90%
t
IRRM
IC
10%
Td(off)
Td(on)
Tr(Ion)
Ton
VRRM
Tf
Toff
dv/dt
AM01506v1
12/18
DocID026224 Rev 3
AM01507v1
STGW40M120DF3, STGWA40M120DF3
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
4.1
TO-247, STGW40M120DF3
Figure 33. TO-247 drawing
0075325_H
DocID026224 Rev 3
13/18
Package mechanical data
STGW40M120DF3, STGWA40M120DF3
Table 8. TO-247 mechanical data
mm.
Dim.
Min.
Typ.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
5.45
L2
14/18
Max.
5.60
18.50
∅P
3.55
3.65
∅R
4.50
5.50
S
5.30
5.50
DocID026224 Rev 3
5.70
STGW40M120DF3, STGWA40M120DF3
4.2
Package mechanical data
TO-247 long leads, STGWA40M120DF3
Figure 34. TO-247 long leads drawing
8463846_A_F
DocID026224 Rev 3
15/18
Package mechanical data
STGW40M120DF3, STGWA40M120DF3
Table 9. TO-247 long leads mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.90
5.00
5.10
A1
2.31
2.41
2.51
A2
1.90
2.00
2.10
b
1.16
1.26
b2
3.25
b3
2.25
c
0.59
0.66
D
20.90
21.00
21.10
E
15.70
15.80
15.90
E2
4.90
5.00
5.10
E3
2.40
2.50
2.60
e
5.34
5.44
5.54
L
19.80
19.92
20.10
L1
16/18
4.30
P
3.50
Q
5.60
S
6.05
3.60
3.70
6.00
6.15
DocID026224 Rev 3
6.25
STGW40M120DF3, STGWA40M120DF3
5
Revision history
Revision history
Table 10. Document revision history
Date
Revision
Changes
22-Apr-2014
1
Initial release.
16-Sep-2014
2
Document status promoted from preliminary to production data.
Added Section 2.1: Electrical characteristics (curves).
10-Nov-2014
3
Updated VF value in Table 4: Static characteristics and Figure 32:
Diode recovery times waveform.
Minor text changes.
DocID026224 Rev 3
17/18
STGW40M120DF3, STGWA40M120DF3
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and
improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on
ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order
acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or
the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2014 STMicroelectronics – All rights reserved
18/18
DocID026224 Rev 3
工商网监
湘ICP备2023018690号
