STGW40N120KD

STGW40N120KD STGWA40N120KD 40 A, 1200 V short circuit rugged IGBT with Ultrafast diode Features ■ Low on-losses ■ High current capability ■ Low gate charge ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with Ultrafast free-wheeling diode 2 3 1 Applications ■ TO-247 Motor control Description This high voltage and short-circuit rugged IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low ON-state behavior. Table 1. Figure 1. Internal schematic diagram Device summary Order codes Markings Package Packaging STGW40N120KD GW40N120KD TO-247 Tube STGWA40N120KD GWA40N120KD TO-247 long leads Tube February 2012 Doc ID 15360 Rev 5 1/15 www.st.com 15 Contents STGW40N120KD, STGWA40N120KD Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 ............................................... 9 Doc ID 15360 Rev 5 STGW40N120KD, STGWA40N120KD 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VCES Collector-emitter voltage (VGE = 0) Value Unit 1200 V IC (1) Continuous collector current at TC= 25 °C 80 A IC (1) Continuous collector current at TC= 100 °C 40 A ICL (2) Turn-off latching current 85 A (3) Pulsed collector current 120 A VGE Gate-emitter voltage ±25 V tSCW Short circuit withstand time, VCE = 0.5 V(BR)CES Tj = 125 °C, RG = 10 Ω, VGE = 12 V 10 µs PTOT Total dissipation at TC = 25 °C 240 W Diode RMS forward current at TC = 25 °C 30 A Surge non repetitive forward current tp = 10 ms sinusoidal 100 A – 55 to 125 °C ICP IF IFSM Tj 1. Parameter Operating junction temperature Calculated according to the iterative formula: T j ( max ) – T C I C ( TC ) = ------------------------------------------------------------------------------------------------------R thj – c × V CE ( sat ) ( max ) ( T j ( max ), IC ( T C ) ) 2. Vclamp = 80% of VCES, Tj =125 °C, RG=10 Ω, VGE=15 V 3. Pulse width limited by maximum junction temperature and turn-off within RBSOA Table 3. Symbol Thermal data Parameter Value Unit Rthj-case Thermal resistance junction-case IGBT 0.42 °C/W Rthj-case Thermal resistance junction-case diode 1.6 °C/W Rthj-amb Thermal resistance junction-ambient 50 °C/W Doc ID 15360 Rev 5 3/15 Electrical characteristics 2 STGW40N120KD, STGWA40N120KD Electrical characteristics TJ = 25 °C unless otherwise specified. Table 4. Symbol Static Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) VCE(sat) Gate threshold voltage VCE= VGE, IC= 1mA ICES Collector cut-off current (VGE = 0) VCE =1200 V VCE =1200 V, TJ =125 °C IGES Gate-emitter leakage current (VCE = 0) VGE =± 20 V Symbol Typ. Max. 1200 VGE= 15 V, IC= 30 A Collector-emitter saturation VGE= 15 V, IC= 30 A, voltage TJ =125 °C VGE(th) Table 5. Unit V 2.8 3.85 2.7 4.5 V V 6.5 V 500 10 µA mA ± 100 nA Dynamic Parameter Test conditions Min. Typ. Max. Unit Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance VCE = 25 V, f = 1 MHz, VGE=0 - 2577 196 39.5 - pF pF pF Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge VCE = 960 V, IC= 30 A,VGE=15 V - 126 22.2 67 - nC nC nC Min. Typ. Max. Unit Table 6. Symbol 4/15 IC = 1 mA Min. Switching on/off (inductive load) Parameter Test conditions td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCC = 960 V, IC = 30 A RG= 10 Ω, VGE= 15 V, (see Figure 16) - 48 40 540 - ns ns A/µs td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCC = 960 V, IC = 30 A RG= 10 Ω, VGE= 15 V, TJ = 125 °C (see Figure 16) - 45 38 665 - ns ns A/µs tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCC = 960 V, IC = 30 A RG= 10 Ω, VGE= 15 V, (see Figure 16) - 84 338 210 - ns ns ns tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCC = 960 V, IC = 30 A RG= 10 Ω, VGE= 15 V, TJ = 125 °C (see Figure 16) - 144 420 360 - ns ns ns Doc ID 15360 Rev 5 STGW40N120KD, STGWA40N120KD Table 7. Symbol 1. Electrical characteristics Switching energy (inductive load) Parameter Test conditions Min. Typ. Max. Unit Eon (1) Eoff (2) Ets Turn-on switching losses Turn-off switching losses Total switching losses VCC = 960 V, IC = 30 A RG= 10 Ω, VGE= 15 V, (see Figure 16) - 3.7 5.7 9.4 - mJ mJ mJ Eon (1) Eoff (2) Ets Turn-on switching losses Turn-off switching losses Total switching losses VCC = 960 V, IC = 30 A RG= 10 Ω, VGE= 15 V, TJ = 125 °C (see Figure 16) - 4.7 9.3 14 - mJ mJ mJ Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 16. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the same temperature (25°C and 125°C) 2. Turn-off losses include also the tail of the collector current Table 8. Symbol Collector-emitter diode Parameter Test conditions Min. Typ. Max. Unit VF Forward on-voltage IF = 20 A IF = 20 A, TJ = 125 °C - 1.9 1.7 - V V trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF = 20 A, VR = 45 V, di/dt = 100 A/µs (see Figure 19) - 84 235 5.6 - ns nC A trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF = 20 A, VR = 45 V, TJ = 125 °C, di/dt = 100 A/µs (see Figure 19) - 152 722 9 - ns nC A Doc ID 15360 Rev 5 5/15 Electrical characteristics STGW40N120KD, STGWA40N120KD 2.1 Electrical characteristics (curves) Figure 2. Output characteristics Figure 3. AM11219v1 IC (A) 210 Transfer characteristics AM11220v1 IC (A) VGE=15V VCE=10V 180 150 14V 150 13V 120 100 90 12V 60 11V 30 10V 50 9V 8V 0 0 Figure 4. 5 10 15 0 0 20 VCE(V) Collector-emitter on voltage vs. collector current AM11221v1 VCE(sat) (V) Figure 5. 2 4 6 8 10 12 VGE(V) 14 Collector-emitter on voltage vs. temperature AM11222v1 VCE(sat) (V) 3.3 IC=50A 2.9 -50°C 25°C 2.9 2.5 30A 2.1 2.5 TJ=125°C 1.7 2.1 1.3 0.9 0 Figure 6. 10 30 40 IC(A) Gate charge vs. gate-source voltage VCC=960V IC=30A 3000 10 2500 8 2000 6 1500 4 1000 2 500 40 60 80 100 120 140 TJ(°C) AM11224v1 4000 12 20 100 C (pF) 3500 0 50 0 Capacitance variations 14 0 10A 1.7 -50 Figure 7. AM11223v1 VGE (V) 16 6/15 20 Qg(nC) Doc ID 15360 Rev 5 0 0 Cies Coes Cres 10 20 30 40 VCE(V) STGW40N120KD, STGWA40N120KD Figure 8. Electrical characteristics Normalized gate threshold voltage vs. temperature AM11225v1 VGE(th) (norm) Normalized breakdown voltage vs. temperature AM11226v1 V(BR)CES (norm) IC=1mA 1.10 Figure 9. IC=1mA 1.06 1.05 1.06 1.00 1.02 0.95 0.90 1.00 0.85 0.98 0.80 0.96 0.75 0.94 0.70 0.65 -50 -25 0 25 50 75 100 125 TJ(°C) Figure 10. Switching losses vs. collector current 0.92 -50 -25 0 25 50 75 100 125 Figure 11. Switching losses vs. gate resistance AM11227v1 E (µJ) AM11228v1 E (µJ) Eoff TJ(°C) Eon 14000 8000 12000 10000 6000 Eon 8000 4000 6000 4000 2000 5 10 15 20 25 30 VCC=960V, IC=30A 2000 VCC=960V, RG=10Ω VGE=15V, TJ=125°C 0 Eoff 0 IC(A) Figure 12. Switching losses vs. temperature VGE=15V, TJ=125°C 30 60 90 120 150 180 210 RG(Ω) Figure 13. Thermal impedance AM11229v1 E (µJ) Eoff 8000 6000 Eon 4000 2000 VCC=960V, IC=30A VGE=15V, RG=10Ω 0 25 50 75 100 125 150 TJ(°C) Doc ID 15360 Rev 5 7/15 Electrical characteristics STGW40N120KD, STGWA40N120KD Figure 14. Turn-off SOA Figure 15. Forward voltage drop vs. forward current AM11230v1 IC (A) AM11231v1 IFM (A) TJ=150°C 90 (typical values) 80 100 70 60 50 10 40 TJ=150°C (maximum values) 30 1 TJ=25°C (maximum values) 20 10 0.1 0.1 8/15 1 10 100 1000 VCE(V) 0 0 Doc ID 15360 Rev 5 0.5 1 1.5 2 2.5 3 3.5 4 VFM(V) STGW40N120KD, STGWA40N120KD 3 Test circuits Test circuits Figure 16. Test circuit for inductive load switching Figure 17. Gate charge test circuit AM01504v1 Figure 18. Switching waveform AM01505v1 Figure 19. Diode recovery time waveform VG IF trr 90% VCE Qrr di/dt 90% 10% ta tb 10% Tr(Voff) t Tcross 90% IRRM IRRM IC 10% Td(off) Td(on) Tr(Ion) Ton Tf Toff VF di/dt AM01506v1 Doc ID 15360 Rev 5 AM01507v1 9/15 Package mechanical data 4 STGW40N120KD, STGWA40N120KD Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 9. TO-247 mechanical data mm. Dim. Min. Typ. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 10/15 Max. 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 Doc ID 15360 Rev 5 5.70 STGW40N120KD, STGWA40N120KD Package mechanical data Figure 20. TO-247 drawing dimensions 0075325_G Doc ID 15360 Rev 5 11/15 Package mechanical data Table 10. STGW40N120KD, STGWA40N120KD TO-247 long leads mechanical data mm Dim. Min. Typ. A 4.90 5.15 D 1.85 2.10 E 0.55 0.67 F 1.07 1.32 F1 1.90 2.38 F2 2.87 3.38 G 10.90 BSC H 15.77 16.02 L 20.82 21.07 L1 4.16 4.47 L2 5.49 5.74 L3 20.05 20.30 L4 3.68 3.93 L5 6.04 6.29 M 2.27 2.52 V 10° V1 3° V3 20° Dia. 12/15 Max. 3.55 3.66 Doc ID 15360 Rev 5 STGW40N120KD, STGWA40N120KD Package mechanical data Figure 21. TO-247 long leads drawing Doc ID 15360 Rev 5 13/15 Revision history 5 STGW40N120KD, STGWA40N120KD Revision history Table 11. 14/15 Document revision history Date Revision Changes 22-Jan-2009 1 Initial release 29-Jun-2009 2 Document status promoted from preliminary data to datasheet. 09-Jul-2009 3 Inserted dynamic values Table 5 on page 4, Table 6 on page 4 and Table 7 on page 5. 11-Jan-2012 4 Added order code STGWA40N120KD Table 1 on page 1, Section 2.1 on page 6, mechanical data TO-247 long leads Table 10 on page 12 and Figure 21 on page 13. 27-Feb-2012 5 Modified: Description on page 1. Doc ID 15360 Rev 5 STGW40N120KD, STGWA40N120KD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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