STGW40NC60V

STGW40NC60V N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH™ IGBT Figure 1: Package Table 1: General Features TYPE STGW40NC60V ■ ■ ■ ■ ■ ■ VCES VCE(sat) (Max) @25°C IC @100°C 600 V < 2.5 V 50 A HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION UP TO 50 KHz LOSSES INCLUDE DIODE RECOVERY ENERGY OFF LOSSES INCLUDE TAIL CURRENT LOWER CRES / CIES RATIO NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRUBUTION u d o 3 2 ) s ( ct r P e 1 TO-247 t e l o Weight: 4.41gr ± 0.01 DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “V” identifies a family optimized for high frequency. s b O Max Clip Pressure: 150 N/mm 2 Figure 2: Internal Schematic Diagram ) (s t c u d o r APPLICATIONS ■ HIGH FREQUENCY INVERTERS ■ SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES ■ UPS ■ MOTOR DRIVERS P e t e l o s b O Table 2: Order Codes SALES TYPE MARKING PACKAGE PACKAGING STGW40NC60V GW40NC60V TO-247 TUBE Rev. 10 July 2004 1/10 STGW40NC60V Table 3: Absolute Maximum ratings Symbol Parameter Value Symbol VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR Reverse Battery Protection 20 V VGE Gate-Emitter Voltage ± 20 V IC Collector Current (continuous) at 25°C (#) 80 A IC Collector Current (continuous) at 100°C (#) 50 A Collector Current (pulsed) 200 A ICM (1) PTOT Tstg Tj Total Dissipation at TC = 25°C 260 W Derating Factor 2.08 W/°C – 55 to 150 °C Storage Temperature Operating Junction Temperature ) s ( ct u d o (1)Pulse width limited by max. junction temperature. r P e Table 4: Thermal Data Min. Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient TL Typ. let o s b Maximum Lead Temperature for Soldering Purpose (1.6 mm from case, for 10 sec.) O ) Max. Unit 0.48 °C/W 50 °C/W 300 °C ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 5: Off t(s Symbol Parameter VBR(CES) Collectro-Emitter Breakdown Voltage IC = 1 mA, VGE = 0 Collector-Emitter Leakage Current (VCE = 0) VGE = Max Rating Tc=25°C Tc=125°C ICES IGES Table 6: On VGE(th) VCE(SAT) c u d ro P e Gate-Emitter Leakage Current (VCE = 0) t e l o s b O Symbol Test Conditions Parameter 2/10 Test Conditions VCE= VGE, IC= 250 µA Collector-Emitter Saturation Voltage VGE= 15 V, IC= 40A, Tj= 25°C VGE= 15 V, IC= 40A, Tj= 125°C T –T JMAX C I ( T ) = -------------------------------------------------------------------------------------------------C C R ×V (T , I ) THJ – C CESAT ( M AX ) C C Typ. Max. 600 Min. Unit V VGE = ± 20 V , VCE = 0 Gate Threshold Voltage (#) Calculated according to the iterative formula: Min. Typ. 3.75 1.9 1.7 10 1 µA mA ± 100 nA Max. Unit 5.75 V 2.5 V V STGW40NC60V ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic Symbol Parameter Test Conditions gfs(1) Forward Transconductance VCE = 15 V, IC= 20 A Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 25V, f = 1 MHz, VGE = 0 Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 390 V, IC = 40 A, VGE = 15V, (see Figure 20) ICL Turn-Off SOA Minimum Current Vclamp = 480 V , Tj = 150°C RG = 100 Ω, VGE= 15V Min. Typ. Max. Unit 20 S 4550 350 105 pF pF pF 214 30 96 nC nC nC ) s ( ct 200 A Table 8: Switching On Symbol Parameter Test Conditions Min. td(on) tr (di/dt)on Eon (2) Turn-on Delay Time Current Rise Time Turn-on Current Slope Turn-on Switching Losses VCC = 390 V, IC = 40 A RG= 3.3Ω, VGE= 15V, Tj= 25°C (see Figure 18) td(on) tr (di/dt)on Eon (2) Turn-on Delay Time Current Rise Time Turn-on Current Slope Turn-on Switching Losses VCC = 390 V, IC = 40 A RG= 3.3Ω, VGE= 15V, Tj= 125°C (see Figure 18) e t e ol s b O Typ. du Max. o r P 43 17 2060 330 450 42 19 1900 640 Unit ns ns A/µs µJ ns ns A/µs µJ 2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25°C and 125°C) ) (s Table 9: Switching Off Symbol Parameter tr(Voff) Off Voltage Rise Time td(off) Turn-off Delay Time tf Eoff (3) Ets tr(Voff) td(off) Eoff (3) Ets Min. Typ. Max. Unit 25 ns 140 ns 45 ns Turn-off Switching Loss 720 970 µJ Total Switching Loss 1050 1420 µJ P e t e l o Off Voltage Rise Time Turn-off Delay Time Vcc = 390 V, IC = 40 A, RGE = 3.3 Ω , VGE = 15 V Tj = 125 °C (see Figure 18) 60 ns 170 ns 77 ns Turn-off Switching Loss 1400 µJ Total Switching Loss 2040 µJ s b O tf Vcc = 390 V, IC = 40 A, RGE = 3.3 Ω , VGE = 15 V TJ = 25 °C (see Figure 18) du ro Current Fall Time ct Test Conditions Current Fall Time (3)Turn-off losses include also the tail of the collector current. 3/10 STGW40NC60V Figure 3: Output Characteristics Figure 6: Transfer Characteristics ) s ( ct u d o r P e Figure 4: Transconductance Figure 7: Collector-Emitter On Voltage vs Temperature t e l o ) (s s b O t c u d o r let P e Figure 5: Collector-Emitter On Voltage vs Collector Current o s b O 4/10 Figure 8: Normalized Gate Threshold vs Temperature STGW40NC60V Figure 9: Normalized Breakdown Voltage vs Temperature Figure 12: Gate Charge vs Gate-Emitter Voltage ) s ( ct u d o r P e Figure 10: Capacitance Variations Figure 13: Total Switching Losses vs Temperature t e l o ) (s s b O t c u d o r let P e Figure 11: Total Switching Losses vs Gate Resistance o s b Figure 14: Total Switching Losses vs Collector Current O 5/10 STGW40NC60V Figure 15: Thermal Impedance Figure 17: Ic vs Frequency ) s ( ct u d o r P e Figure 16: Turn-Off SOA For a fast IGBT suitable for high frequency applications, the typical collector current vs. maximum operating frequency curve is reported. That frequency is defined as follows: fMAX = (PD - PC) / (EON + EOFF) 1) The maximum power dissipation is limited by maximum junction to case thermal resistance: PD = ∆T / RTHJ-C considering ∆T = TJ - TC = 125 °C- 75 °C = 50°C 2) The conduction losses are: PC = IC * VCE(SAT) * δ with 50% of duty cycle, VCESAT typical value @125°C. 3) Power dissipation during ON & OFF commutations is due to the switching frequency: PSW = (EON + EOFF) * freq. 4) Typical values @ 125°C for switching losses are used (test conditions: VCE = 390V, VGE = 15V, RG = 3.3 Ohm). Furthermore, diode recovery energy is included in the EON (see note 2), while the tail of the collector current is included in the EOFF measurements (see note 3). t e l o ) (s t c u d o r P e t e l o s b O 6/10 s b O STGW40NC60V Figure 18: Test Circuit for Inductive Load Switching Figure 20: Gate Charge Test Circuit ) s ( ct u d o r P e Figure 19: Switching Waveforms t e l o ) (s s b O t c u d o r P e t e l o s b O 7/10 STGW40NC60V TO-247 MECHANICAL DATA mm. DIM. MIN. inch TYP MAX. MIN. 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 0.620 5.45 14.20 14.80 0.560 L1 3.70 4.30 0.14 0.582 t e l o 18.50 3.55 3.65 0.140 øR 4.50 5.50 s b O S 5.50 ) (s t c u d o r P e t e l o 0.17 0.728 øP 0.177 0.216 ) s ( ct u d o r P e 0.214 L L2 8/10 MAX. A e s b O TYP. 0.143 0.216 STGW40NC60V Table 10: Revision History Date Revision 13-Jul-2004 14-Jul-2004 9 10 Description of Changes Stylesheet update. No content change Some datas have been updated ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 9/10 STGW40NC60V ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. 10/10