STGW40NC60W

STGW40NC60W 40 A - 600 V - ultra fast IGBT Features ■ Low CRES / CIES ratio (no cross conduction susceptibility) ■ High frequency operation Applications ) s ( ct u d o 2 1 ■ High frequency inverters, UPS ■ Motor drivers ■ HF, SMPS and PFC in both hard switch and resonant topologies ■ Welding ■ Induction heating 3 TO-247 Description r P e t e l o ) (s s b O Figure 1. Internal schematic diagram This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. t c u d o r P e t e l o s b O Table 1. Device summary Order code Marking Package Packaging STGW40NC60W GW40NC60W TO-247 Tube July 2008 Rev 1 1/13 www.st.com 13 Contents STGW40NC60W Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 ) s ( ct u d o r P e t e l o ) (s t c u d o r P e t e l o s b O 2/13 s b O STGW40NC60W 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Unit VCES Collector-emitter voltage (VGE = 0) 600 V IC (1) Collector current (continuous) at 25 °C 70 A (1) Collector current (continuous) at 100 °C 40 A (2) Turn-off latching current 230 A ICP (3) Pulsed collector current 230 VGE Gate-emitter voltage ±20 PTOT Total dissipation at TC = 25 °C 250 IC ICL Tj 1. Value A uc od Operating junction temperature Pr – 55 to 150 Calculated according to the iterative formula: e t e ol T –T JMAX C I ( T ) = --------------------------------------------------------------------------------------------------C C R ×V (T , I ) THJ – C CESAT ( MAX ) C C ) s ( t V W °C s b O 2. Vclamp = 80%(VCES), Tj = 150 °C, RG = 10 Ω, VGE= 15 V 3. Pulse width limited by max. junction temperature allowed ) (s Table 3. Thermal resistance t c u Symbol Rthj-case Value Unit Thermal resistance junction-case max 0.5 °C/W Thermal resistance junction-ambient max 50 °C/W d o r Rthj-amb Parameter P e t e l o s b O 3/13 Electrical characteristics 2 STGW40NC60W Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 4. Static Symbol Parameter V(BR)CES Collector-emitter breakdown IC = 1 mA voltage (VGE = 0) VCE(sat) Collector-emitter saturation voltage VGE= 15 V, IC= 30 A VGE(th) Gate threshold voltage VCE= VGE, IC= 250µA ICES Collector-emitter cut-off current (VGE = 0) VGE = 600 V IGES Gate-emitter cut-off current (VCE = 0) VGE = ± 20 V Forward transconductance VCE = 15 V, IC= 30 A gfs Table 5. Dynamic Symbol Cies Coes Cres Qg Qge ete Qgc l o s b O 4/13 Test conditions Parameter ) (s Input capacitance Output capacitance Reverse transfer capacitance ct Pr u d o Total gate charge Gate-emitter charge Gate-collector charge Min. Typ. Max. Unit 600 2.1 1.9 VGE= 15 V, IC= 30 A, TC=125 °C VGE = 600 V, TC=125 °C e t e ol VCE = 25 V, f = 1 MHz, VGE= 0 VGE = 15 V (see Figure 17) du o r P Test conditions 20 Min. 2.5 ) s ( ct 3.75 s b O VCE = 390 V, IC = 30 A, V V V 5.75 V 500 5 µA mA ±100 nA S Typ. Max. Unit 2900 298 59 126 16 46 pF pF pF nC nC nC STGW40NC60W Electrical characteristics Table 6. Switching on/off (inductive load) Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) Parameter Test conditions VCC = 390 V, IC = 30 A Turn-on delay time Current rise time Turn-on current slope RG= 10 Ω, VGE= 15 V (see Figure 16) VCC = 390 V, IC = 30 A Turn-on delay time Current rise time Turn-on current slope RG= 10 Ω, VGE= 15 V, TC= 125 °C (see Figure 16) VCC = 390 V, IC = 30 A, Off voltage rise time Turn-off delay time Current fall time td(off) tf tr(Voff) tf Table 7. Symbol Parameter Test conditions )- Eon (1) Eoff(2) Ets Turn-on switching losses Turn-off switching losses Total switching losses Eon (1) Eoff (2) Ets Turn-on switching losses Turn-off switching losses Total switching losses e t e ol s ( t c o r P du s b O VCC = 390 V, IC = 30 A RG= 10 Ω, VGE= 15 V (see Figure 16) VCC = 390 V, IC = 30 A RG= 10 Ω, VGE= 15 V, TC= 125 °C (see Figure 16) ns ns A/µs 32 14 2300 ns ns A/µs 54 213 67 Min Typ. P e t e l o 33 12 2600 ro VCC = 390 V, IC = 30 A, Switching energy (inductive load) Max. Unit ) s ( t ns ns ns c u d (see Figure 16) RGE=10 Ω, VGE =15 V, TC=125 °C (see Figure 16) Typ. 26 168 36 RGE = 10 Ω, VGE =15 V Off voltage rise time Turn-off delay time Current fall time td(off) Min. ns ns ns Max Unit 302 349 651 µJ µJ µJ 553 750 1303 µJ µJ µJ 1. Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & diode are at the same temperature (25 °C and 125 °C) bs 2. Turn-off losses include also the tail of the collector current O 5/13 Electrical characteristics STGW40NC60W 2.1 Electrical characteristics (curves) Figure 2. Output characteristics Figure 3. Transfer characteristics ) s ( ct Figure 4. Transconductance Figure 5. u d o r P e Collector-emitter on voltage vs temperature t e l o ) (s s b O t c u d o r P e t e l o bs Figure 6. O 6/13 Collector-emitter on voltage vs collector current Figure 7. Normalized gate threshold vs temperature STGW40NC60W Figure 8. Electrical characteristics Normalized breakdown voltage vs temperature Figure 9. Gate charge vs gate-emitter voltage ) s ( ct u d o r P e Figure 10. Capacitance variations Figure 11. Switching losses vs temperature t e l o ) (s s b O t c u d o r P e t e l o Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector current s b O 7/13 Electrical characteristics STGW40NC60W Figure 14. Thermal impedance Figure 15. Turn-off SOA ) s ( ct u d o r P e t e l o ) (s t c u d o r P e t e l o s b O 8/13 s b O STGW40NC60W 3 Test circuit Test circuit Figure 16. Test circuit for inductive load switching Figure 17. Gate charge test circuit ) s ( ct u d o r P e Figure 18. Switching waveforms t e l o ) (s s b O t c u d o r P e t e l o s b O 9/13 Package mechanical data 4 STGW40NC60W Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com ) s ( ct u d o r P e t e l o ) (s t c u d o r P e t e l o s b O 10/13 s b O STGW40NC60W Package mechanical data TO-247 Mechanical data mm. Dim. A Min. 4.85 Typ A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 E 15.45 ) s ( ct 5.45 14.20 L1 3.70 e t e ol L2 øP 3.55 øR 4.50 du 20.15 e L Max. 5.15 )- S s b O o r P 15.75 14.80 4.30 18.50 3.65 5.50 5.50 s ( t c u d o r P e t e l o s b O 11/13 Revision history 5 STGW40NC60W Revision history Table 8. Document revision history Date Revision 09-Jul-2008 1 Changes First release ) s ( ct u d o r P e t e l o ) (s t c u d o r P e t e l o s b O 12/13 s b O STGW40NC60W ) s ( ct Please Read Carefully: u d o Information in this document is provided solely in connection with ST products. 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