STGW40S120DF3

STGW40S120DF3, STGWA40S120DF3 Trench gate field-stop IGBT, S series 1200 V, 40 A low drop Datasheet - production data Features • 10 µs of short-circuit withstand time • VCE(sat) = 1.65 V (typ.) @ IC = 40 A • Tight parameter distribution • Safer paralleling   • Low thermal resistance  • Soft and fast recovery antiparallel diode Applications 72 72ORQJOHDGV • Industrial drives Figure 1. Internal schematic diagram &RU7$% • UPS • Solar • Welding Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the S series of 1200 V IGBTs which is tailored to maximize efficiency of low frequency industrial systems. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. * ( Table 1. Device summary Order code Marking Package Packing STGW40S120DF3 G40S120DF3 TO-247 Tube STGWA40S120DF3 G40S120DF3 TO-247 long leads Tube December 2014 This is information on a product in full production. DocID026373 Rev 2 1/18 www.st.com Contents STGW40S120DF3, STGWA40S120DF3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5 2/18 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.1 TO-247, STGW40S120DF3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.2 TO-247 long leads, STGWA40S120DF3 . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 DocID026373 Rev 2 STGW40S120DF3, STGWA40S120DF3 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VCES Parameter Collector-emitter voltage (VGE = 0) Value Unit 1200 V IC Continuous collector current at TC = 25 °C 80 A IC Continuous collector current at TC = 100 °C 40 A ICP(1) Pulsed collector current 160 A VGE Gate-emitter voltage ±20 V IF Continuous forward current at TC = 25 °C 80 A IF Continuous forward current at TC = 100 °C 40 A IFP(1) Pulsed forward current 160 A PTOT Total dissipation at TC = 25 °C 468 W TSTG Storage temperature range - 55 to 150 °C Operating junction temperature - 55 to 175 °C Value Unit TJ 1. Pulse width limited by maximum junction temperature. Table 3. Thermal data Symbol Parameter RthJC Thermal resistance junction-case IGBT 0.32 °C/W RthJC Thermal resistance junction-case diode 0.74 °C/W RthJA Thermal resistance junction-ambient 50 °C/W DocID026373 Rev 2 3/18 18 Electrical characteristics 2 STGW40S120DF3, STGWA40S120DF3 Electrical characteristics TJ = 25 °C unless otherwise specified Table 4. Static characteristics Symbol Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA Min. VF Unit V 1.65 VGE = 15 V, IC = 40 A, Collector-emitter saturation TJ = 125 °C voltage VGE = 15 V, IC = 25 A TJ = 175 °C Forward on-voltage Max. 1200 VGE = 15 V, IC = 40 A VCE(sat) Typ. 2.15 1.9 V 2.05 IF = 40 A 2.85 IF = 40 A TJ = 125 °C 2.25 V IF = 40 A TJ = 175 °C 2.1 V VGE(th) Gate threshold voltage VCE = VGE, IC = 2 mA ICES Collector cut-off current (VGE = 0) IGES Gate-emitter leakage current (VCE = 0) 5 6 3.95 V 7 V VCE = 1200 V 25 µA VGE = ± 20 V 250 nA Table 5. Dynamic characteristics Symbol 4/18 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 VCC = 960 V, IC =40 A, VGE = 15 V, see Figure 30 Qge Gate-emitter charge Qgc Gate-collector charge DocID026373 Rev 2 Min. Typ. Max. Unit - 2475 - pF - 185 - pF - 95 - pF - 129 - nC - 19 - nC - 68 - nC STGW40S120DF3, STGWA40S120DF3 Electrical characteristics Table 6. IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Min. Typ. Max. Unit Turn-on delay time - 35 - ns Current rise time - 15 - ns - 2100 - A/µs - 148 - ns - 264 - ns Turn-on current slope VCE = 600 V, IC = 40 A, VGE = 15 V, RG= 15 Ω (see Figure 29) Turn-off delay time Current fall time Turn-on switching losses - 1.433 - mJ (2) Turn-off switching losses - 3.83 - mJ Total switching losses - 5.26 - mJ Turn-on delay time - 32 - ns Current rise time - 18 - ns Turn-on current slope - 1800 - A/µs - 154 - ns - 4.46 - ns Ets td(on) tr (di/dt)on td(off) tf VCE = 600 V, IC = 40 A, RG = 15 Ω, VGE = 15 V, TJ = 175 °C, (see Figure 29) Turn-off delay time Current fall time (1) Turn-on switching losses - 2.9 - mJ (2) Turn-off switching losses - 5.6 - mJ Ets Total switching losses - 8.5 - mJ tsc Short-circuit withstand time - µs Eon Eoff 1. Test conditions (1) Eon Eoff Parameter VCC ≤ 600 V, VGE= 15 V, TJstart ≤ 150 °C, VP < 1200 V 10 Energy losses include reverse recovery of the diode. 2. Turn-off losses also include the tail of the collector current. Table 7. Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit - 355 - ns - 2575 - nC - 25 - A - 1110 - A/µs trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current dlrr/ /dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy - 1.12 - mJ trr Reverse recovery time - 667 - ns Qrr Reverse recovery charge - 8500 - nC Irrm Reverse recovery current - 37 - A dIrr/ /dt Peak rate of fall of reverse recovery current during tb - 450 - A/µs Err Reverse recovery energy - 3.9 - mJ IF = 40 A, VR = 600 V, VGE = 15 V, di/dt = 1000 A/µs, (see Figure 29) IF = 40 A, VR = 600 V, VGE = 15 V, TJ = 175 °C, di/dt = 1000 A/µs, (see Figure 29) DocID026373 Rev 2 5/18 18 Electrical characteristics 2.1 STGW40S120DF3, STGWA40S120DF3 Electrical characteristics (curves) Figure 2. Power dissipation vs. case temperature Figure 3. Collector current vs. case temperature *,3*/0 3727 >:@  *,3*/0 ,& $ 9*(•97 -”ƒ&  9*(•97 -”ƒ&                   Figure 4. Output characteristics (TJ = 25 °C) *,3*/0 ,& $     7&ƒ&  9 9*( 9    7&ƒ&  Figure 5. Output characteristics (TJ = 175 °C) *,3*/0 ,& $  9*( 9 9     9 9   9   9     9 9       Figure 6. VCE(sat) vs. junction temperature 9&(VDW 9  *,3*/0 ,& $ 9*( 9    9&(9    9&(9 9&(VDW 9  *,3*/0 7- ƒ& 9*( 9  ,& $   ,& $         7-ƒ& DocID026373 Rev 2 7- ƒ&      Figure 7. VCE(sat) vs. collector current  6/18    7- ƒ&        ,& $ STGW40S120DF3, STGWA40S120DF3 Electrical characteristics Figure 8. Collector current vs. switching frequency *,3*/0 ,& $     —V 7& ƒ& —V   *,3*/0 ,& $ 7& ƒ&   Figure 9. Forward bias safe operating area  —V 5HFWDQJXODUFXUUHQWVKDSH GXW\F\FOH 9&& 9 5* ȍ9*( 97- ƒ& IN+]  Figure 10. Transfer characteristics *,3*/0 ,& $   9&(9  Figure 11. Diode VF vs. forward current *,3*/0 9) 9        7- ƒ&  9&( 9  7- ƒ&  7- ƒ& 7- ƒ&   7- ƒ&        9*(9 Figure 12. Normalized VGE(th) vs. junction temperature *,3*/0 9*(7+ QRUP          ,)$ Figure 13. Normalized VBR(CES) vs. junction temperature *,3*/0 9%5&(6 QRUP ,& P$ ,& P$9&( 9*(           PV 7F ƒ& VLQJOHSXOVH       7-ƒ&   DocID026373 Rev 2     7-ƒ& 7/18 18 Electrical characteristics STGW40S120DF3, STGWA40S120DF3 Figure 14. Capacitance variations Figure 15. Gate charge vs. gate-emitter voltage *,3*/0 & S) 9*( 9 &LHV *,3*/0 9&& 9 ,& $, * P$  I 0+]     &RHV  &UHV      Figure 16. Switching loss vs. collector current ( P- *,3*/0 5* ȍ9&&   9&(9 ƒ& 97-  9  9*(  4JQ&    Figure 17. Switching loss vs. gate resistance ( P-   *,3*/0 ,& $9&& ƒ& 97-  9  9*(  (RII   (RII    (RQ       *,3*/0 ,& $9&&    ,&$  Figure 18. Switching loss vs. temperature ( P- (RQ     5*ȍ Figure 19. Switching loss vs. collector emitter voltage *,3*/0 ( P- 95* ȍ9*( 9       (RII  (RII    (RQ   (RQ  ,& $9*(  8/18     7-ƒ& DocID026373 Rev 2    9 5* ȍ  7M ƒ&   9&(9 STGW40S120DF3, STGWA40S120DF3 Electrical characteristics Figure 20. Short-circuit time and current vs VGE Figure 21. Switching times vs. collector current *,3*/0 W6& —V W QV ,VF $   9&& ”97- ”ƒ& ,6& W 6&        WI WGRII   *,3*/0 WGRQ WU        9        9*( Figure 22. Switching times vs. gate resistance 9&& 99*( 95*  ȍ7M ƒ&    ,&$   Figure 23. Reverse recovery current vs. diode current slope *,3*/0 W QV  ,UUP $  WI *,3*/0 9&& 99*( 9,) $ ƒ& 7-   WGRII    WGRQ  WU   9&& 99*( 9,) $ ƒ& 7-      Figure 24. Reverse recovery time vs. diode current slope WUU QV    5*ȍ *,3*/0               GLGW$—V   GLGW$—V Figure 25. Reverse recovery charge vs. diode current slope 4UU —& 9&& 99*( 9,)  ƒ& $ 7-     DocID026373 Rev 2 *,3*/0 9&& 99*( 9,)  ƒ& $ 7-     GLGW$—V 9/18 18 Electrical characteristics STGW40S120DF3, STGWA40S120DF3 Figure 26. Reverse recovery energy vs. diode current slope *,3*/0 (UU P-  9&& 99*( 9,)  ƒ& $ 7-        10/18    GLGW$—V DocID026373 Rev 2 STGW40S120DF3, STGWA40S120DF3 Electrical characteristics Figure 27. Thermal impedance for IGBT =WK727B$ . į         6LQJOHSXOVH          WSV Figure 28. Thermal impedance for diode . *& į         6LQJOHSXOVH      DocID026373 Rev 2     WSV 11/18 18 Test circuits 3 STGW40S120DF3, STGWA40S120DF3 Test circuits Figure 29. Test circuit for inductive load switching Figure 30. Gate charge test circuit AM01505v1 AM01504v1 Figure 31. Switching waveform Figure 32. Diode recovery time waveform 90% 10% VG IF trr 90% VCE Qrr di/dt ts tf 10% Tr(Voff) Tcross 10% IRRM 90% IC Tr(Ion) Ton IRRM 10% Td(off) Td(on) t VRRM Tf Toff dv/dt AM01506v1 12/18 DocID026373 Rev 2 AM01507v1 STGW40S120DF3, STGWA40S120DF3 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO-247, STGW40S120DF3 Figure 33. TO-247 outline 0075325_H DocID026373 Rev 2 13/18 18 Package information STGW40S120DF3, STGWA40S120DF3 Table 8. TO-247 mechanical data mm. Dim. Min. Typ. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 14/18 Max. 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 DocID026373 Rev 2 5.70 STGW40S120DF3, STGWA40S120DF3 4.2 Package information TO-247 long leads, STGWA40S120DF3 Figure 34. TO-247 long lead outline 8463846_A_F DocID026373 Rev 2 15/18 18 Package information STGW40S120DF3, STGWA40S120DF3 Table 9. TO-247 long leads mechanical data mm Dim. Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 1.26 b2 3.25 b3 2.25 c 0.59 0.66 D 20.90 21.00 21.10 E 15.70 15.80 15.90 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 5.34 5.44 5.54 L 19.80 19.92 20.10 L1 16/18 4.30 P 3.50 Q 5.60 S 6.05 3.60 3.70 6.00 6.15 DocID026373 Rev 2 6.25 STGW40S120DF3, STGWA40S120DF3 5 Revision history Revision history Table 10. Document revision history Date Revision 16-May-2014 1 Initial release. 2 Updated Section 1: Electrical ratings and Section 2: Electrical characteristics. Inserted Section 2.1: Electrical characteristics (curves). Updated Section 4: Package information. 18-Dec-2014 Changes DocID026373 Rev 2 17/18 18 STGW40S120DF3, STGWA40S120DF3 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2014 STMicroelectronics – All rights reserved 18/18 DocID026373 Rev 2