STGW40V60DF

STGFW40V60DF, STGW40V60DF Datasheet Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Features 1 1 2 3 1 TO-3PF 2 3 TO-247 C(2, TAB) • Maximum junction temperature: TJ = 175 °C • • Tail-less switching off VCE(sat) = 1.8 V (typ.) @ IC = 40 A • • • • Tight parameters distribution Safe paralleling Low thermal resistance Very fast soft recovery antiparallel diode Applications G(1) E(3) NG1E3C2T • • • • • Welding Power factor correction UPS Solar inverters Chargers Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status links STGFW40V60DF STGW40V60DF DS9556 - Rev 12 - June 2022 For further information contact your local STMicroelectronics sales office. www.st.com STGFW40V60DF, STGW40V60DF Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol VCES Parameter Value TO-247 TO-3PF Unit Collector-emitter voltage (VGE = 0 V) 600 V Continuous collector current at TC = 25 °C 80 A Continuous collector current at TC = 100 °C 40 A ICP Pulsed collector current 160 A VGE Gate-emitter voltage ±20 V Continuous forward current at TC = 25 °C 80 A Continuous forward current at TC = 100 °C 40 A IFP(1) Pulsed forward current 160 A PTOT Total power dissipation at TC = 25 °C VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Tstg Storage temperature range -55 to 150 °C Operating junction temperature range -55 to 175 °C IC (1) IF TJ 283 98.5 W 3.5 kV 1. Pulse width is limited by maximum junction temperature. Table 2. Thermal data Symbol DS9556 - Rev 12 Parameter Value TO-247 TO-3PF Unit RthJC Thermal resistance, junction-to-case IGBT 0.53 1.52 °C/W RthJC Thermal resistance, junction-to-case diode 1.14 1.95 °C/W RthJA Thermal resistance, junction-to-ambient 50 °C/W page 2/19 STGFW40V60DF, STGW40V60DF Electrical characteristics 2 Electrical characteristics TJ = 25 °C unless otherwise specified Table 3. Static characteristics Symbol Parameter Test conditions V(BR)CES Collector-emitter breakdown voltage VCE(sat) Collector-emitter saturation voltage VF Forward on-voltage VGE = 0 V, IC = 2 mA Min. Typ. 600 1.8 VGE = 15 V, IC = 40 A, TJ = 125 °C 2.15 VGE = 15 V, IC = 40 A, TJ = 175 °C 2.35 IF = 40 A 1.7 IF = 40 A, TJ = 125 °C 1.4 IF = 40 A, TJ = 175 °C 1.3 Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current IGES Gate-emitter leakage current 5 Unit V VGE = 15 V, IC = 40 A VGE(th) Max. 6 2.3 V 2.45 V 7 V VGE = 0 V, VCE = 600 V 25 µA VCE = 0 V, VGE = ±20 V ±250 nA Table 4. Dynamic characteristics Symbol DS9556 - Rev 12 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 V VCC = 480 V, IC = 40 A, VGE = 0 to 15 V (see Figure 34. Gate charge test circuit) Min. Typ. Max. Unit - 5400 - pF - 220 - pF - 180 - pF - 226 - nC - 38 - nC - 95 - nC page 3/19 STGFW40V60DF, STGW40V60DF Electrical characteristics Table 5. IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time - 52 - ns Current rise time - 17 - ns - 1850 - A/µs - 208 - ns - 20 - ns - 456 - µJ Turn-on current slope Turn-off delay time Current fall time VCE = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V (see Figure 33. Test circuit for inductive load switching) (1) Turn-on switching energy Eoff(2) Turn-off switching energy - 411 - µJ Total switching energy - 867 - µJ Turn-on delay time - 52 - ns Current rise time - 21 - ns - 1538 - A/µs - 220 - ns - 21 - ns - 1330 - µJ Eon Ets td(on) tr (di/dt)on td(off) tf Turn-on current slope Turn-off-delay time Current fall time VCE = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, TJ = 175 °C (see Figure 33. Test circuit for inductive load switching) Eon(1) Turn-on switching energy Eoff(2) Turn-off switching energy - 560 - µJ Total switching energy - 1890 - µJ Min. Typ. Max. Unit - 41 - ns Ets 1. Including the reverse recovery of the diode. 2. Including the tail of the collector current. Table 6. Diode switching characteristics (inductive load) Symbol DS9556 - Rev 12 Parameter Test conditions trr Reverse recovery time Qrr Reverse recovery charge IF = 40 A, VR = 400 V, - 440 - nC Irrm Reverse recovery current VGE = 15 V, di/dt = 1000 A/µs - 21.6 - A dIrr/dt Peak rate of fall of reverse recovery current during tb (see Figure 33. Test circuit for inductive load switching) - 1363 - A/µs Err Reverse recovery energy - 151 - µJ trr Reverse recovery time - 109 - ns - 2400 - nC - 44.4 - A - 670 - A/µs - 718 - µJ Qrr Reverse recovery charge Irrm Reverse recovery current dIrr/dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy IF = 40 A, VR = 400 V, VGE = 15 V, di/dt = 1000 A/µs, TJ = 175 °C (see Figure 33. Test circuit for inductive load switching) page 4/19 STGFW40V60DF, STGW40V60DF Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Power dissipation vs case temperature for TO-247 AM17385v1 Ptot (W) Figure 2. Collector current vs case temperature for TO-247 AM17386v1 IC (A) VGE= 15 V, TJ= 175 °C VGE= 15 V, TJ= 175 °C 80 250 70 60 200 50 150 40 30 100 20 50 0 0 10 25 50 0 0 75 100 125 150 175 TC(°C) Figure 3. Power dissipation vs case temperature for TO-3PF PTOT (W) 25 50 75 100 125 150 175 Figure 4. Collector current vs case temperature for TO-3PF IC (A) AM17385v4 TC(°C) AM17386v5 VGE ≥ 15 V, TJ ≤ 175 °C 100 VGE ≥ 15 V, TJ ≤ 175 °C 30 80 60 20 40 10 20 0 25 75 125 175 TC (°C) Figure 5. Output characteristics (TJ = 25 °C) AM17387v1 IC (A) VGE=15V 140 0 25 175 TC (°C) Figure 6. Output characteristics (TJ = 175 °C) AM17388v1 IC (A) VGE=15V 140 11V 13V 120 9V 100 80 60 60 40 40 20 20 1 2 3 4 11V 100 80 DS9556 - Rev 12 125 13V 120 0 0 75 VCE(V) 0 0 9V 7V 1 2 3 4 VCE(V) page 5/19 STGFW40V60DF, STGW40V60DF Electrical characteristics (curves) Figure 7. VCE(sat) vs junction temperature VCE(sat) (V) AM17389v1 IC=80A VGE=15V 2.8 VCE(sat) (V) AM17390v1 VGE=15V 2.8 IC=40A 2.4 Tj=25°C 2.6 2.4 2.2 2.2 2.0 IC=20A 1.8 2.0 1.8 1.6 Tj=-40°C 1.6 1.4 0 50 100 150 TJ(°C) Figure 9. Collector current vs switching frequency for TO-247 AM17391v1 IC (A) 90 TC= 80 °C 80 1.4 1.2 10 20 30 50 60 70 80 IC(A) IC (A) AM17391v3 40 60 40 40 Figure 10. Collector current vs switching frequency for TO-3PF 70 50 Tj=175°C 3.0 2.6 1.2 -50 Figure 8. VCE(sat) vs collector current TC= 80 °C 30 TC= 100 °C TC= 100 °C 20 30 20 Rectangular current shape 10 (duty cycle = 0.5, VCC = 400 V, R = 10 Ω, VGE= 0/15 V , Tj = 175 °C 0 G f(kHz) 10 1 Figure 11. Forward bias safe operating area for TO-247 IC (A) 10 Rectangular current shape (duty cycle = 0.5, VCC = 400 V, RG = 10 Ω, VGE= 0/15 V , Tj = 175 °C 0 10 0 10 1 10 2 f (kHz) Figure 12. Forward bias safe operating area for TO-3PF AM17392v1 IC (A) 10µs 10 2 AM17392v6 100 10 100µs 1ms tp= 10 µs 1 0.1 0.01 1 DS9556 - Rev 12 10 1 Single pulse, Tc=25°C Tj