STGW40V60DLF,
STGWT40V60DLF
Trench gate field-stop IGBT, V series
600 V, 40 A very high speed
Datasheet - production data
Features
• Designed for soft commutation only
TAB
• Maximum junction temperature: TJ = 175 °C
• Tail-less switching off
• VCE(sat) = 1.8 V (typ.) @ IC = 40 A
2
• Tight parameters distribution
3
3
1
2
1
TO-247
• Safe paralleling
• Low thermal resistance
• Low VF soft recovery co-packaged diode
TO-3P
Applications
Figure 1. Internal schematic diagram
• Induction heating
• Microwave oven
C (2 or TAB)
• Resonant converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate field stop
structure. The device is part of the V series of
IGBTs, which represent an optimum compromise
between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive VCE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
G (1)
E (3)
Table 1. Device summary
Order code
Marking
Package
Packaging
STGW40V60DLF
GW40V60DLF
TO-247
Tube
STGWT40V60DLF
GWT40V60DLF
TO-3P
Tube
October 2013
This is information on a product in full production.
DocID024212 Rev 4
1/17
www.st.com
Contents
STGW40V60DLF, STGWT40V60DLF
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
.......................... 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
DocID024212 Rev 4
STGW40V60DLF, STGWT40V60DLF
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Value
Unit
Collector-emitter voltage (VGE = 0)
600
V
IC
Continuous collector current at TC = 25 °C
80
A
IC
Continuous collector current at TC = 100 °C
40
A
ICP(1)
Pulsed collector current
160
A
VGE
Gate-emitter voltage
±20
V
IF
Continuous forward current at TC = 25 °C
80
A
IF
Continuous forward current at TC = 100 °C
40
A
IFP(1)
Pulsed forward current
160
A
PTOT
Total dissipation at TC = 25 °C
283
W
TSTG
Storage temperature range
- 55 to 150
°C
Operating junction temperature
- 55 to 175
°C
Value
Unit
VCES
TJ
Parameter
1. Pulse width limited by maximum junction temperature
Table 3. Thermal data
Symbol
Parameter
RthJC
Thermal resistance junction-case IGBT
0.53
°C/W
RthJC
Thermal resistance junction-case diode
1.4
°C/W
RthJA
Thermal resistance junction-ambient
50
°C/W
DocID024212 Rev 4
3/17
17
Electrical characteristics
2
STGW40V60DLF, STGWT40V60DLF
Electrical characteristics
TJ = 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol
Parameter
Test conditions
Collector-emitter
V(BR)CES breakdown voltage
(VGE = 0)
IC = 2 mA
Min.
VF
Unit
V
1.8
VGE = 15 V, IC = 40 A
Collector-emitter saturation
TJ = 125 °C
voltage
VGE = 15 V, IC = 40 A
TJ = 175 °C
Forward on-voltage
Max.
600
VGE = 15 V, IC = 40 A
VCE(sat)
Typ.
2.3
2.15
V
2.35
IF = 40 A
1.55
IF = 40 A TJ = 125 °C
1.3
V
IF = 40 A TJ = 175 °C
1.25
V
VGE(th)
Gate threshold voltage
VCE = VGE, IC = 1 mA
ICES
Collector cut-off current
(VGE = 0)
IGES
Gate-emitter leakage
current (VCE = 0)
5
6
1.8
V
7
V
VCE = 600 V
25
μA
VGE = ± 20 V
250
nA
Table 5. Dynamic characteristics
Symbol
4/17
Parameter
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer
capacitance
Qg
Total gate charge
Test conditions
VCE = 25 V, f = 1 MHz,
VGE = 0
VCC = 480 V, IC = 40 A,
VGE = 15 V (see Figure 27)
Qge
Gate-emitter charge
Qgc
Gate-collector charge
DocID024212 Rev 4
Min.
Typ.
Max.
Unit
-
5400
-
pF
-
220
-
pF
-
180
-
pF
-
226
-
nC
-
38
-
nC
-
95
-
nC
STGW40V60DLF, STGWT40V60DLF
Electrical characteristics
Table 6. IGBT switching characteristics (inductive load)
Symbol
td(off)
tf
Parameter
Test conditions
Turn-off delay time
Current fall time
Eoff(1)
Turn-off switching losses
td(off)
Turn-off delay time
tf
Eoff(1)
Current fall time
Turn-off switching losses
VCE = 400 V, IC = 40 A,
RG = 10 Ω, VGE = 15 V
(see Figure 25)
VCE = 400 V, IC = 40 A,
RG = 10 Ω, VGE = 15 V,
TJ = 175 °C (see Figure 25)
Min.
Typ.
Max.
208
Unit
ns
-
20
-
ns
-
411
-
μJ
220
ns
-
21
-
ns
-
560
-
μJ
Unit
1. Turn-off losses include also the tail of the collector current.
Table 7. IGBT switching characteristics (capacitive load)
Symbol
Parameter
Test conditions
VCC = 320 V, RG = 10 Ω,
IC = 40 A, L = 100 μH,
Csnub = 20 nF
(see Figure 26)
Eoff(1)
Turn-off switching losses
VCC = 320 V, RG = 10 Ω,
IC = 40 A, L = 100 μH,
Csnub = 20 nF, TJ = 175 °C
(see Figure 26)
Min.
Typ.
Max.
-
147
μJ
-
303
-
1. Turn-off losses include also the tail of the collector current.
DocID024212 Rev 4
5/17
17
Electrical characteristics
2.1
STGW40V60DLF, STGWT40V60DLF
Electrical characteristics (curves)
Figure 2. Power dissipation vs. case
temperature
AM17385v1
Ptot
(W)
Figure 3. Collector current vs. case temperature
AM17386v1
IC (A)
VGE ≥ 15V
TJ ≤ 175 °C
80
250
70
60
200
50
150
40
30
100
20
50
0
0
10
25
50
Figure 4. Output characteristics (TJ=25°C)
AM17387v1
IC
(A)
0
0
75 100 125 150 175 TC(°C)
VGE=15V
25
50
75 100 125 150 175
Figure 5. Output characteristics (TJ=175°C)
AM17388v1
IC
(A)
VGE=15V
13V
140
TC(°C)
140
11V
13V
120
120
9V
100
11V
100
9V
80
80
60
60
40
40
20
20
0
0
1
2
3
Figure 6. VCE(sat) vs. junction temperature
VCE(sat)
(V)
0
0
VCE(V)
4
7V
1
3
2
Figure 7. VCE(sat) vs. collector current
AM17389v1
AM17390v1
VCE(sat)
(V)
IC=80A
VGE=15V
2.8
3.0
2.6
2.8
IC=40A
2.4
2.6
2.2
2.4
Tj=175°C
VGE=15V
Tj=25°C
2.2
2.0
IC=20A
1.8
2.0
1.8
1.6
6/17
Tj=-40°C
1.6
1.4
1.2
-50
VCE(V)
4
0
50
100
150
TC(°C)
1.4
1.2
10
DocID024212 Rev 4
20
30
40
50
60
70
80 IC(A)
STGW40V60DLF, STGWT40V60DLF
Electrical characteristics
Figure 8. Collector current vs. switching
frequency
Figure 9. Forward bias safe operating area
AM17391v1
IC (A)
90
TC=80°C
100
80
70
AM17392v1
IC (A)
TC=100°C
10μs
10
60
100μs
50
1ms
1
40
30
20
10
0
1
0.1
rectangular current shape,
(duty cycle=0.5, Vcc= 400V Rg=10Ω,
Vge=0/15V, Tj=175 °C)
f(kHz)
10
Figure 10. Transfer characteristics
0.01
1
VCE(V)
100
10
Figure 11. Diode VF vs. forward current
AM17393v1
IC (A)
160
Single pulse, Tc=25°C
Tj
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