STGW40V60DLF

STGW40V60DLF, STGWT40V60DLF Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Datasheet - production data Features • Designed for soft commutation only TAB • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.8 V (typ.) @ IC = 40 A 2 • Tight parameters distribution 3 3 1 2 1 TO-247 • Safe paralleling • Low thermal resistance • Low VF soft recovery co-packaged diode TO-3P Applications Figure 1. Internal schematic diagram • Induction heating • Microwave oven C (2 or TAB) • Resonant converters Description This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. G (1) E (3) Table 1. Device summary Order code Marking Package Packaging STGW40V60DLF GW40V60DLF TO-247 Tube STGWT40V60DLF GWT40V60DLF TO-3P Tube October 2013 This is information on a product in full production. DocID024212 Rev 4 1/17 www.st.com Contents STGW40V60DLF, STGWT40V60DLF Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) .......................... 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 DocID024212 Rev 4 STGW40V60DLF, STGWT40V60DLF 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0) 600 V IC Continuous collector current at TC = 25 °C 80 A IC Continuous collector current at TC = 100 °C 40 A ICP(1) Pulsed collector current 160 A VGE Gate-emitter voltage ±20 V IF Continuous forward current at TC = 25 °C 80 A IF Continuous forward current at TC = 100 °C 40 A IFP(1) Pulsed forward current 160 A PTOT Total dissipation at TC = 25 °C 283 W TSTG Storage temperature range - 55 to 150 °C Operating junction temperature - 55 to 175 °C Value Unit VCES TJ Parameter 1. Pulse width limited by maximum junction temperature Table 3. Thermal data Symbol Parameter RthJC Thermal resistance junction-case IGBT 0.53 °C/W RthJC Thermal resistance junction-case diode 1.4 °C/W RthJA Thermal resistance junction-ambient 50 °C/W DocID024212 Rev 4 3/17 17 Electrical characteristics 2 STGW40V60DLF, STGWT40V60DLF Electrical characteristics TJ = 25 °C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA Min. VF Unit V 1.8 VGE = 15 V, IC = 40 A Collector-emitter saturation TJ = 125 °C voltage VGE = 15 V, IC = 40 A TJ = 175 °C Forward on-voltage Max. 600 VGE = 15 V, IC = 40 A VCE(sat) Typ. 2.3 2.15 V 2.35 IF = 40 A 1.55 IF = 40 A TJ = 125 °C 1.3 V IF = 40 A TJ = 175 °C 1.25 V VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current (VGE = 0) IGES Gate-emitter leakage current (VCE = 0) 5 6 1.8 V 7 V VCE = 600 V 25 μA VGE = ± 20 V 250 nA Table 5. Dynamic characteristics Symbol 4/17 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 VCC = 480 V, IC = 40 A, VGE = 15 V (see Figure 27) Qge Gate-emitter charge Qgc Gate-collector charge DocID024212 Rev 4 Min. Typ. Max. Unit - 5400 - pF - 220 - pF - 180 - pF - 226 - nC - 38 - nC - 95 - nC STGW40V60DLF, STGWT40V60DLF Electrical characteristics Table 6. IGBT switching characteristics (inductive load) Symbol td(off) tf Parameter Test conditions Turn-off delay time Current fall time Eoff(1) Turn-off switching losses td(off) Turn-off delay time tf Eoff(1) Current fall time Turn-off switching losses VCE = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V (see Figure 25) VCE = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, TJ = 175 °C (see Figure 25) Min. Typ. Max. 208 Unit ns - 20 - ns - 411 - μJ 220 ns - 21 - ns - 560 - μJ Unit 1. Turn-off losses include also the tail of the collector current. Table 7. IGBT switching characteristics (capacitive load) Symbol Parameter Test conditions VCC = 320 V, RG = 10 Ω, IC = 40 A, L = 100 μH, Csnub = 20 nF (see Figure 26) Eoff(1) Turn-off switching losses VCC = 320 V, RG = 10 Ω, IC = 40 A, L = 100 μH, Csnub = 20 nF, TJ = 175 °C (see Figure 26) Min. Typ. Max. - 147 μJ - 303 - 1. Turn-off losses include also the tail of the collector current. DocID024212 Rev 4 5/17 17 Electrical characteristics 2.1 STGW40V60DLF, STGWT40V60DLF Electrical characteristics (curves) Figure 2. Power dissipation vs. case temperature AM17385v1 Ptot (W) Figure 3. Collector current vs. case temperature AM17386v1 IC (A) VGE ≥ 15V TJ ≤ 175 °C 80 250 70 60 200 50 150 40 30 100 20 50 0 0 10 25 50 Figure 4. Output characteristics (TJ=25°C) AM17387v1 IC (A) 0 0 75 100 125 150 175 TC(°C) VGE=15V 25 50 75 100 125 150 175 Figure 5. Output characteristics (TJ=175°C) AM17388v1 IC (A) VGE=15V 13V 140 TC(°C) 140 11V 13V 120 120 9V 100 11V 100 9V 80 80 60 60 40 40 20 20 0 0 1 2 3 Figure 6. VCE(sat) vs. junction temperature VCE(sat) (V) 0 0 VCE(V) 4 7V 1 3 2 Figure 7. VCE(sat) vs. collector current AM17389v1 AM17390v1 VCE(sat) (V) IC=80A VGE=15V 2.8 3.0 2.6 2.8 IC=40A 2.4 2.6 2.2 2.4 Tj=175°C VGE=15V Tj=25°C 2.2 2.0 IC=20A 1.8 2.0 1.8 1.6 6/17 Tj=-40°C 1.6 1.4 1.2 -50 VCE(V) 4 0 50 100 150 TC(°C) 1.4 1.2 10 DocID024212 Rev 4 20 30 40 50 60 70 80 IC(A) STGW40V60DLF, STGWT40V60DLF Electrical characteristics Figure 8. Collector current vs. switching frequency Figure 9. Forward bias safe operating area AM17391v1 IC (A) 90 TC=80°C 100 80 70 AM17392v1 IC (A) TC=100°C 10μs 10 60 100μs 50 1ms 1 40 30 20 10 0 1 0.1 rectangular current shape, (duty cycle=0.5, Vcc= 400V Rg=10Ω, Vge=0/15V, Tj=175 °C) f(kHz) 10 Figure 10. Transfer characteristics 0.01 1 VCE(V) 100 10 Figure 11. Diode VF vs. forward current AM17393v1 IC (A) 160 Single pulse, Tc=25°C Tj