STGB40V60F, STGFW40V60F
STGP40V60F, STGW40V60F
Datasheet
Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
Features
TAB
3
1
2
1
D PAK
2
3
TO-3PF
TAB
TO-220
1
2
3
TO-247
C(2, TAB)
G(1)
1
2
•
Maximum junction temperature: TJ = 175 °C
•
•
Tail-less switching off
VCE(sat) = 1.8 V (typ.) @ IC = 40 A
•
•
•
Tight parameters distribution
Safe paralleling
Low thermal resistance
3
Applications
•
•
•
•
•
Welding
Power factor correction
UPS
Solar inverters
Chargers
Description
E(3)
G1C2TABE3_NO_DIODE
These devices are IGBTs developed using an advanced proprietary trench gate
field-stop structure. These devices are part of the V series IGBTs, which represent
an optimum compromise between conduction and switching losses to maximize
the efficiency of very high frequency converters. Furthermore, the positive VCE(sat)
temperature coefficient and very tight parameter distribution result in safer paralleling
operation.
Product status links
STGB40V60F
STGFW40V60F
STGP40V60F
STGW40V60F
DS9698 - Rev 3 - March 2021
For further information contact your local STMicroelectronics sales office.
www.st.com
STGB40V60F, STGFW40V60F, STGP40V60F, STGW40V60F
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Value
Symbol
VCES
Parameter
D²PAK, TO-247,
TO-3P
TO-3PF
Unit
Collector-emitter voltage (VGE = 0 V)
600
V
Continuous collector current at TC = 25 °C
80
A
Continuous collector current at TC = 100 °C
40
A
ICP(1)
Pulsed collector current
160
A
VGE
Gate-emitter voltage
±20
V
PTOT
Total power dissipation at TC = 25 °C
VISO
Insulation withstand voltage (RMS) from all three leads to
external heat sink (t = 1 s; TC = 25 °C)
Tstg
Storage temperature range
-55 to 150
°C
Operating junction temperature range
-55 to 175
°C
IC
TJ
283
98.5
W
3.5
kV
1. Pulse width is limited by maximum junction temperature.
Table 2. Thermal data
Symbol
DS9698 - Rev 3
Parameter
RthJC
Thermal resistance, junction-to-case
RthJA
Thermal resistance, junction-to-ambient
Value
TO-247, TO-3P
TO-3PF
0.53
1.52
50
Unit
°C/W
°C/W
page 2/25
STGB40V60F, STGFW40V60F, STGP40V60F, STGW40V60F
Electrical characteristics
2
Electrical characteristics
TJ = 25 °C unless otherwise specified
Table 3. Static characteristics
Symbol
Parameter
Test conditions
V(BR)CES
Collector-emitter breakdown
voltage
VCE(sat)
Collector-emitter saturation
voltage
VGE = 0 V, IC = 2 mA
Min.
Typ.
600
1.8
VGE = 15 V, IC = 40 A, TJ = 125 °C
2.15
VGE = 15 V, IC = 40 A, TJ = 175 °C
2.35
Gate threshold voltage
VCE = VGE, IC = 1 mA
ICES
Collector cut-off current
IGES
Gate-emitter leakage current
5
Unit
V
VGE = 15 V, IC = 40 A
VGE(th)
Max.
6
2.3
V
7
V
VGE = 0 V, VCE = 600 V
25
µA
VCE = 0 V, VGE = ±20 V
±250
nA
Table 4. Dynamic characteristics
Symbol
DS9698 - Rev 3
Parameter
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer capacitance
Qg
Total gate charge
Qge
Gate-emitter charge
Qgc
Gate-collector charge
Test conditions
VCE = 25 V, f = 1 MHz, VGE = 0 V
VCC = 480 V, IC = 40 A, VGE = 0 to 15 V
(see Figure 28. Gate charge test circuit)
Min.
Typ.
Max.
Unit
-
5400
-
pF
-
220
-
pF
-
180
-
pF
-
226
-
nC
-
38
-
nC
-
95
-
nC
page 3/25
STGB40V60F, STGFW40V60F, STGP40V60F, STGW40V60F
Electrical characteristics
Table 5. Switching characteristics (inductive load)
Symbol
td(on)
tr
(di/dt)on
td(off)
tf
Parameter
Min.
Typ.
Max.
Unit
Turn-on delay time
-
52
-
ns
Current rise time
-
17
-
ns
-
1850
-
A/µs
-
208
-
ns
-
20
-
ns
-
456
-
µJ
Turn-on current slope
Turn-off delay time
Current fall time
Test conditions
VCE = 400 V, IC = 40 A,
RG = 10 Ω, VGE = 15 V
(see Figure 27. Test circuit for inductive
load switching)
(1)
Turn-on switching energy
Eoff(2)
Turn-off switching energy
-
411
-
µJ
Total switching energy
-
867
-
µJ
Turn-on delay time
-
52
-
ns
Current rise time
-
21
-
ns
-
1538
-
A/µs
-
220
-
ns
-
21
-
ns
-
1330
-
µJ
Eon
Ets
td(on)
tr
(di/dt)on
td(off)
tf
Turn-on current slope
Turn-off-delay time
Current fall time
VCE = 400 V, IC = 40 A,
RG = 10 Ω, VGE = 15 V, TJ = 175 °C
(see Figure 27. Test circuit for inductive
load switching)
Eon(1)
Turn-on switching energy
Eoff(2)
Turn-off switching energy
-
560
-
µJ
Total switching energy
-
1890
-
µJ
Ets
1. Including the reverse recovery of the external diode. The diode is the same of the co-packed STGW40V60DF.
2. Including the tail of the collector current.
DS9698 - Rev 3
page 4/25
STGB40V60F, STGFW40V60F, STGP40V60F, STGW40V60F
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Power dissipation vs case temperature for
D²PAK, TO-247 and TO-3P
AM17385v1
Ptot
(W)
Figure 2. Collector current vs case temperature for
D²PAK, TO-247 and TO-3P
AM17386v1
IC (A)
VGE= 15 V, TJ= 175 °C
VGE= 15 V, TJ= 175 °C
80
250
70
60
200
50
150
40
30
100
20
50
0
0
10
25
50
0
0
75 100 125 150 175 TC(°C)
Figure 3. Power dissipation vs case temperature for
TO-3PF
PTOT
(W)
25
50
75 100 125 150 175
Figure 4. Collector current vs case temperature for
TO-3PF
IC
(A)
AM17385v4
TC(°C)
AM17386v5
VGE ≥ 15 V, TJ ≤ 175 °C
100
VGE ≥ 15 V, TJ ≤ 175 °C
30
80
60
20
40
10
20
0
25
75
125
175
TC (°C)
Figure 5. Output characteristics (TJ = 25 °C)
AM17387v1
IC
(A)
VGE=15V
140
125
175
TC (°C)
Figure 6. Output characteristics (TJ = 175 °C)
AM17388v1
IC
(A)
VGE=15V
140
11V
13V
120
9V
100
80
60
60
40
40
20
20
1
2
3
4
11V
100
80
0
0
75
13V
120
DS9698 - Rev 3
0
25
VCE(V)
0
0
9V
7V
1
2
3
4
VCE(V)
page 5/25
STGB40V60F, STGFW40V60F, STGP40V60F, STGW40V60F
Electrical characteristics (curves)
Figure 7. VCE(sat) vs junction temperature
VCE(sat)
(V)
AM17389v1
IC=80A
VGE=15V
2.8
VCE(sat)
(V)
AM17390v1
VGE=15V
2.8
IC=40A
2.4
Tj=25°C
2.6
2.4
2.2
2.2
2.0
IC=20A
1.8
2.0
1.8
1.6
Tj=-40°C
1.6
1.4
0
50
100
150
TJ(°C)
Figure 9. Collector current vs switching frequency for
D²PAK, TO-247 and TO-3P
AM17391v1
IC (A)
90
TC= 80 °C
80
1.4
1.2
10
20
30
50
60
70
80 IC(A)
IC
(A)
AM17391v3
40
60
40
40
Figure 10. Collector current vs switching frequency for
TO-3PF
70
50
Tj=175°C
3.0
2.6
1.2
-50
Figure 8. VCE(sat) vs collector current
TC= 80 °C
30
TC= 100 °C
TC= 100 °C
20
30
20
Rectangular current shape
10 (duty cycle = 0.5, VCC = 400 V,
R = 10 Ω, VGE= 0/15 V , Tj = 175 °C
0 G
f(kHz)
10
1
Figure 11. Forward bias safe operating area for D²PAK,
TO-247 and TO-3P
AM17392v1
IC (A)
10
Rectangular current shape
(duty cycle = 0.5, VCC = 400 V,
RG = 10 Ω, VGE= 0/15 V , Tj = 175 °C
0
10 0
10 1
10 2
f (kHz)
Figure 12. Forward bias safe operating area for TO-3PF
IC
(A)
AM17392v6
100
10µs
10
10 2
100µs
tp= 10 µs
1ms
1
0.1
0.01
1
DS9698 - Rev 3
10 1
Single pulse, Tc=25°C
Tj