STGW45HF60WD

STGW45HF60WD 45 A, 600 V ultra fast IGBT Features ■ Improved Eoff at elevated temperature ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Ultra fast soft recovery antiparallel diode Applications 2 3 1 ■ Welding ■ High frequency converters ■ Power factor correction TO-247 Description The “HF” family is based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) versus temperature, as well as lower conduction losses. The “W” series is a subset of products tailored to high switching frequency operation (over 100 kHz). Table 1. Figure 1. Internal schematic diagram Device summary (1) Order code Marking Package Packaging TO-247 Tube GW45HF60WDA STGW45HF60WD GW45HF60WDB GW45HF60WDC 1. Collector-emitter saturation voltage is classified in group A, B and C, see Table 5: VCE(sat) classification. STMicroelectronics reserves the right to ship from any group according to production availability. April 2010 Doc ID 15593 Rev 3 1/12 www.st.com 12 Electrical ratings 1 STGW45HF60WD Electrical ratings Table 2. Absolute maximum ratings Symbol VCES Value Unit Collector-emitter voltage (VGE = 0) 600 V IC (1) Continuous collector current at TC = 25 °C 70 A IC (1) Continuous collector current at TC = 100 °C 45 A ICP(2) Pulsed collector current 150 A (3) Turn-off latching current 80 A ± 20 V Diode RMS forward current at TC = 25 °C 30 A IFSM Surge not repetitive forward current tp= 10 ms sinusoidal 120 A PTOT Total dissipation at TC = 25 °C 250 W Tstg Storage temperature – 55 to 150 °C Value Unit Thermal resistance junction-case IGBT 0.5 °C/W Thermal resistance junction-case diode 1.5 °C/W Thermal resistance junction-ambient 50 °C/W ICL VGE IF Tj 1. Parameter Gate-emitter voltage Operating junction temperature Calculated according to the iterative formula: T j ( max ) – T C I C ( T C ) = ------------------------------------------------------------------------------------------------------R thj – c × V CE ( sat ) ( max ) ( T j ( max ), I C ( T C ) ) 2. Pulse width limited by maximum junction temperature and turn-off within RBSOA 3. VCLAMP = 80% (VCES), VGE = 15 V, RG = 10 Ω, TJ = 150 °C Table 3. Symbol Rthj-case Rthj-amb 2/12 Thermal data Parameter Doc ID 15593 Rev 3 STGW45HF60WD 2 Electrical characteristics Electrical characteristics (TJ = 25 °C unless otherwise specified) Table 4. Symbol Static Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 1 mA 600 VCE(sat) Collector-emitter saturation VGE = 15 V, IC= 30 A voltage VGE = 15V, IC = 30 A,TJ= 125 °C VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current (VGE = 0) VCE = 600 V VCE = 600 V, TJ = 125 °C IGES Gate-emitter leakage current (VCE = 0) VGE = ±20 V Table 5. VCE(sat) classification Symbol Parameter Min. Typ. Max. Unit V 2.5 V V 5.75 V 500 5 µA mA ± 100 nA 1.65 3.75 Value VCE(sat) Table 6. Symbol Group Collector-emitter saturation voltage VGE = 15 V, IC= 30 A Unit Min. Max. A 1.68 1.92 B 1.88 2.17 C 2.13 2.50 V Dynamic Parameter Test conditions Min. Typ. Max. Unit Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance VCE = 25 V, f = 1 MHz, VGE = 0 - 2900 260 55 - pF pF pF Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge VCE = 400 V, IC = 30 A, VGE = 15 V, Figure 17 - 160 17 65 - nC nC nC Doc ID 15593 Rev 3 3/12 Electrical characteristics Table 7. Symbol STGW45HF60WD Switching on/off (inductive load) Parameter Test conditions Min. Typ. Max. Unit td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCC = 400 V, IC = 30 A RG = 6.8 Ω, VGE = 15 V, (Figure 16) - 30 12 2600 - ns ns A/µs td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCC = 400 V, IC = 30 A RG = 6.8 Ω, VGE = 15 V, TJ = 125 °C (Figure 16) - 30 14 2200 - ns ns A/µs tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCC = 400 V, IC = 30 A, RG = 6.8 Ω, VGE = 15 V (Figure 16) - 30 145 50 - ns ns ns tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCC = 400 V, IC = 30 A, RG = 6.8 Ω, VGE =15 V, TJ = 125 °C (Figure 16) - 47 185 65 - ns ns ns Min. Typ. Max. Unit Table 8. Symbol Switching energy (inductive load) Parameter Test conditions Eon(1) Eoff Ets Turn-on switching losses Turn-off switching losses Total switching losses VCC = 400 V, IC = 30 A RG = 6.8 Ω, VGE = 15 V, (Figure 18) - 300 330 630 Eon(1) Eoff Ets Turn-on switching losses Turn-off switching losses Total switching losses VCC = 400 V, IC = 30 A RG = 6.8 Ω, VGE = 15 V, TJ = 125 °C (Figure 18) - 550 550 1100 µJ µJ µJ µJ µJ µJ 800 1. Eon is the tun-on losses when a typical diode is used in the test circuit in Figure 18. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25 °C and 125 °C). Eon include diode recovery energy. Table 9. Symbol 4/12 Collector-emitter diode Parameter Test conditions Min. Typ. Max. Unit VF Forward on-voltage IF = 30 A IF = 30 A, TJ = 125 °C - 2 1.65 2.5 V V trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF = 30 A,VR = 50 V, di/dt = 100 A/µs (see Figure 19) - 55 110 3 trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF = 30 A,VR = 50 V, di/dt = 100 A/µs TJ =125 °C, (see Figure 19) - 140 400 5.5 Doc ID 15593 Rev 3 - ns nC A - ns nC A STGW45HF60WD Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Output characteristics IC200 (A) VGE = 15 V Figure 3. Transfer characteristics IC200 (A) 10 V 9V 150 150 VCE = 10 V 100 8V 100 50 7V 50 6V 0 0 0 2 Figure 4. 4 6 8 10 VCE (V) Normalized VCE(sat) vs. IC 0 2 Figure 5. VCE(sat) 1.6 (norm) 4 6 VGE (V) 10 8 Normalized VCE(sat) vs. temperature 1.5 VCE(sat) (norm) VGE = 15 V 1.4 1.3 TJ = -50 ºC IC = 80 A 1.2 TJ = 25 ºC 1.1 60 A 20 A 1 40 A 0.9 TJ = 150 ºC 0.8 10 A 0.7 0.6 IC = 5 A VGE = 15 V 0.4 0 20 Figure 6. 40 60 80 IC (A) 30 A 0.5 -50 Normalized breakdown voltage vs. Figure 7. temperature 0 50 100 TJ 150 (°C) Normalized gate threshold voltage vs. temperature 1.2 VGE(th) (norm) 1.1 VCES (norm) 1.1 1.05 1 0.9 1 0.8 IC = 1 mA VGE = VCE 0.95 0.7 IC = 250 µA 0.6 0.9 -50 0 50 100 TJ 150 (°C) Doc ID 15593 Rev 3 -50 0 50 100 TJ 150 (°C) 5/12 Electrical characteristics Figure 8. STGW45HF60WD Gate charge vs. gate-emitter voltage Figure 9. VGE 20 (V) Capacitance variations C5000 (pF) 16 VCC = 400 V f = 1 MHz VGE = 0 4000 IC = 30 A 12 3000 8 2000 4 1000 Cies Coes 0 Cres 0 0 40 80 120 160 QG 200 (nC) Figure 10. Switching losses vs temperature 0 10 20 30 40 VCE (V) 50 Figure 11. Switching losses vs. gate resistance E 550 (µJ) E3500 (µJ) 500 3000 450 2500 EOFF EOFF EON 400 2000 EON 1500 350 VCE = 400 V, VGE = 15 V IC = 30 A, RG =6.8 Ω 300 VCE = 400 V, VGE = 15 V 1000 250 IC = 30 A, TJ = 125 °C 500 25 50 75 100 TJ 125 (°C) Figure 12. Switching losses vs. collector current 0 40 80 120 160 200 Rg240 (Ω) Figure 13. Turn-off SOA 1000 IC (A) E1200 (µJ) 1000 EOFF 100 800 600 10 EON VGE = 15 V, RG = 6.8 Ω 400 200 RG = 6.8 Ω, TJ = 125 °C 0 0.1 10 6/12 TC = 150 °C 1 VCE = 400 V, VGE = 15 V 20 30 40 IC 50 (A) Doc ID 15593 Rev 3 1 10 100 1000 VCE (V) STGW45HF60WD Electrical characteristics Figure 14. Diode forward on voltage Figure 15. Thermal impedance !-V ) &!  4*  # MAXIMUMVALUES  4* # TYPICALVALUES  4* # MAXIMUMVALUES            6&6 Doc ID 15593 Rev 3 7/12 Test circuits 3 STGW45HF60WD Test circuits Figure 16. Test circuit for inductive load switching Figure 17. Gate charge test circuit AM01504v1 Figure 18. Switching waveform AM01505v1 Figure 19. Diode recovery time waveform VG IF trr 90% VCE Qrr di/dt 90% 10% ta tb 10% Tr(Voff) t Tcross 90% IRRM IRRM IC 10% Td(off) Td(on) Tr(Ion) Ton Tf Toff VF di/dt AM01506v1 8/12 Doc ID 15593 Rev 3 AM01507v1 STGW45HF60WD 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 15593 Rev 3 9/12 Package mechanical data STGW45HF60WD TO-247 Mechanical data mm. Dim. A Min. 4.85 Typ A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 øP 3.55 øR 4.50 3.65 5.50 S 10/12 Max. 5.15 5.50 Doc ID 15593 Rev 3 STGW45HF60WD 5 Revision history Revision history Table 10. Document revision history Date Revision 16-Apr-2009 1 Initial release. 04-Aug-2009 2 – Modified IC value on Test conditions Table 4 – Modified RG value on Test conditions Table 7 and Table 8 3 – – – – 28-Apr-2010 Changes Document status promoted from preliminary data to datasheet Inserted VCE(sat) grouping A, B and C (see Table 5) Inserted dynamic parameters on Table 5, Table 6 and Table 7 Inserted Section 2.1: Electrical characteristics (curves) Doc ID 15593 Rev 3 11/12 STGW45HF60WD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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