STGW45NC60WD

STGW45NC60WD 45 A - 600 V ultra fast IGBT Features ■ Low CRES / CIES ratio (no cross conduction susceptibility) ■ Very soft ultra fast recovery anti parallel diode Applications 2 ■ High frequency inverters, UPS ■ Motor drivers ■ HF, SMPS and PFC in both hard switch and resonant topologies ■ Welding ■ Induction heating 3 1 TO-247 long leads Figure 1. Description Internal schematic diagram This IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Table 1. Device summary Order code Marking Package Packaging STGW45NC60WD GW45NC60WD TO-247 long leads Tube June 2008 Rev 1 1/14 www.st.com 14 Contents STGW45NC60WD Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 7 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 STGW45NC60WD 1 Electrical ratings Electrical ratings Table 2. Symbol Parameter Value Unit VCES Collector-emitter voltage (VGS = 0) 600 V IC (1) Collector current (continuous) at TC=25 °C 90 A Collector current (continuous) at TC=100 °C 45 A ICL (2) Turn-off latching current 230 A ICP(3) Pulsed collector current 230 A VGE Gate-emitter voltage ±20 V Diode RMS forward current at TC=25 °C 30 A IFSM Surge non repetitive forward current tp=10 ms sinusoidal 120 A PTOT Total dissipation at TC = 25 °C 285 W – 55 to 150 °C Value Unit IC (1) IF Tj 1. Absolute maximum ratings Operating junction temperature Calculated according to the iterative formula: T –T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------C C R × V (T , I ) THJ – C CESAT ( MAX ) C C 2. Vclamp = 80% VCES , Tj = 150 °C, RG = 10 Ω, VGE= 15 V 3. Pulse width limited by max junction temperature allowed Table 3. Symbol Thermal resistance Parameter Rthj-case Thermal resistance junction-case IGBT 0.437 °C/W Rthj-case Thermal resistance junction-case diode 1.5 °C/W Rthj-amb Thermal resistance junction-ambient max 50 °C/W 3/14 Electrical characteristics 2 STGW45NC60WD Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. Symbol Parameter Test conditions V(BR)CES Collector-emitter breakdown IC = 1 mA voltage (VGE = 0) VCE(sat) Collector-emitter saturation voltage VGE= 15 V, IC= 30 A VGE(th) Gate threshold voltage VCE= VGE, IC= 250 µA ICES Collector-emitter leakage current (VGE = 0) VCE = 600 V IGES gfs (1) 1. Min. Typ. Max. Unit 600 V 2.1 1.9 2.6 V V 5.75 V VCE = 600 V, Tc=125 °C 500 5 µA mA Gate-emitter leakage current (VCE = 0) VGE = ± 20 V ±100 nA Forward transconductance VCE = 15 V, IC= 30 A VGE= 15 V, IC= 30 A, Tc= 125 °C 3.75 20 S Pulsed: pulse duration = 300 ìs, duty cycle 1.5% Table 5. Symbol Cies Coes Cres Qg Qge Qgc 4/14 Static (electrical characteristics) Dynamic (electrical characteristics) Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions VCE = 25 V, f = 1 MHz, VGE= 0 VCE = 390 V, IC = 30 A, VGE = 15 V, (see Figure 18) Min. Typ. Max. Unit 2900 298 59 pF pF pF 126 16 46 nC nC nC STGW45NC60WD Table 6. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Table 7. Symbol Electrical characteristics Switching on/off (inductive load) Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Test conditions Min. VCC = 390 V, IC = 30 A RG= 10 Ω, VGE= 15 V, (see Figure 17) VCC = 390V, IC = 30A RG= 10Ω, VGE= 15V, TC= 125 °C Typ. Max. Unit 33 12 2600 ns ns A/µs 32 14 2300 ns ns A/µs 26 168 36 ns ns ns 54 213 67 ns ns ns (see Figure 17) Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Vcc = 390 V, IC = 30 A, RGE = 10 Ω, VGE =15 V, (see Figure 17) Vcc = 390 V, IC = 30 A, RGE=10 Ω, VGE =15 V, TC=125 °C (see Figure 17) Switching energy (inductive load) Parameter Eon (1) Eoff(2) Ets Turn-on switching losses Turn-off switching losses Total switching losses Eon (1) Eoff (2) Ets Turn-on switching losses Turn-off switching losses Total switching losses Test conditions VCC = 390 V, IC = 30 A RG= 10 Ω, VGE= 15 V, (see Figure 17) VCC = 390 V, IC = 30 A RG= 10 Ω, VGE= 15 V, TC = 125 °C Min. Typ. Max. Unit 302 349 651 µJ µJ µJ 553 750 1303 µJ µJ µJ (see Figure 17) 1. Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 20 Eon include diode recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) 2. Turn-off losses include also the tail of the collector current 5/14 Electrical characteristics Table 8. Symbol Collector-emitter diode Parameter VF Forward on-voltage trr Reverse recovery time Reverse recovery charge Reverse recovery current Qrr Irrm trr Qrr Irrm 6/14 STGW45NC60WD Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions IF = 30 A IF = 30 A, TC = 125 °C IF = 30 A, VR = 50 V, di/dt =100 A/µs (see Figure 20) IF = 30 A, VR = 50 V, TC= 125 °C, di/dt =100 A/µs (see Figure 20) Min Typ. Max Unit 2.4 1.8 V V 45 56 2.55 ns nC A 100 290 5.8 ns nC A STGW45NC60WD Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Output characteristics Figure 3. Transfer characteristics Figure 4. Transconductance Figure 5. Collector-emitter on voltage vs temperature Figure 6. Collector-emitter on voltage vs collector current Figure 7. Normalized gate threshold vs temperature 7/14 Electrical characteristics Figure 8. Normalized breakdown voltage vs temperature Figure 10. Capacitance variations STGW45NC60WD Figure 9. Gate charge vs gate-emitter voltage Figure 11. Switching losses vs temperature Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector current 8/14 STGW45NC60WD Electrical characteristics Figure 14. Thermal impedance Figure 15. Turn-off SOA Figure 16. Emitter-collector diode characteristics IFM(A) 120 110 Tj=125°C (Maximum values) 100 90 80 Tj=125°C (Typical values) 70 60 Tj=25°C (Maximum values) 50 40 30 20 10 VFM(V) 0 0 1 2 3 4 5 6 9/14 Test circuit 3 STGW45NC60WD Test circuit Figure 17. Test circuit for inductive load switching Figure 18. Gate charge test circuit Figure 19. Switching waveforms Figure 20. Diode recovery times waveform 10/14 STGW45NC60WD 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/14 Package mechanical data STGW45NC60WD TO-247 long leads mechanical data mm Dim. Min. A D E F F1 F2 F3 F4 G H L L1 L2 L3 L4 L5 M V V2 DIAM Typ. Max. 4.85 2.2 0.4 1 5.16 2.6 0.8 1.4 3 2 1.9 3 2.4 3.4 10.9 15.45 19.85 3.7 18.3 14.2 34.05 5.35 2 16.03 21.09 4.3 19.13 20.3 41.38 6.3 3 5° 60° 3.55 3.65 V 5 H L1 L4 L2 L DIA L5 A F2 F1 L3 F3 D F4 V2 F(X3) M E G = 12/14 = 7395426_Rev_D STGW45NC60WD 5 Revision history Revision history Table 9. Document revision history Date Revision 05-Jun-2008 1 Changes First release 13/14 STGW45NC60WD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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