STGW50H60DF

STGW50H60DF 50 A, 600 V field stop trench gate IGBT with Ultrafast diode Datasheet − production data Features ■ High speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time ■ Ultrafast soft recovery antiparallel diode ■ Lead free package 2 3 1 TO-247 Applications ■ Photovoltaic inverters ■ Uninterruptible power supply ■ Welding ■ Power factor correction ■ High switching frequency converters Figure 1. Internal schematic diagram Description Using advanced proprietary trench gate and field stop structure, this IGBT leads to an optimized compromise between conduction and switching losses maximizing the efficiency for high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and a very tight parameter distribution result in an easier paralleling operation. Table 1. Device summary Order code Marking Package Packaging STGW50H60DF GW50H60DF TO-247 Tube July 2012 This is information on a product in full production. Doc ID 018673 Rev 5 1/12 www.st.com 12 Electrical ratings 1 STGW50H60DF Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0) 600 V IC Continuous collector current at TC = 25 °C 100 A IC Continuous collector current at TC = 100 °C 50 A Pulsed collector current 200 A Gate-emitter voltage ±20 V Diode RMS forward current at TC = 25 °C 30 A IFSM Surge not repetitive forward current tp = 10 ms sinusoidal 120 A PTOT Total dissipation at TC = 25 °C 360 W 6 µs - 55 to 150 °C VCES ICP (1) VGE IF tSC TSTG TJ 1. Short-circuit withstand time at VCC = 400 V, VGE = 15 V Storage temperature range Operating junction temperature Pulse width limited by maximum junction temperature and turn-off within RBSOA Table 3. Symbol 2/12 Parameter Thermal data Parameter Value Unit RthJC Thermal resistance junction-case IGBT 0.35 °C/W RthJC Thermal resistance junction-case diode 1.5 °C/W RthJA Thermal resistance junction-ambient 50 °C/W Doc ID 018673 Rev 5 STGW50H60DF 2 Electrical characteristics Electrical characteristics TJ = 25 °C unless otherwise specified. Table 4. Symbol Static Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA Min. Typ. Max. 600 Unit V VGE = 15 V, IC = 50 A Collector-emitter saturation VGE = 15 V, IC = 50 A voltage TJ = 125 °C 1.8 VCE(sat) VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 6.0 ICES Collector cut-off current (VGE = 0) VCE = 600 V 25 µA IGES Gate-emitter leakage current (VCE = 0) VGE = ± 20 V 250 nA Table 5. Symbol Cies Coes Cres Qg Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VCE = 25 V, f = 1 MHz, VGE = 0 Total gate charge VCC = 400 V, IC = 50 A, VGE = 15 V Gate-emitter charge Qgc Gate-collector charge Symbol V Dynamic Qge Table 6. V 2.0 Min. Typ. Max. Unit - 7150 275 140 - pF pF pF - 217 - nC - 61 - nC - 90 - nC Min. Typ. Max. Unit - ns ns A/µs Switching on/off (inductive load) Parameter Test conditions td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCE = 400 V, IC = 50 A, RG = 10 Ω, VGE = 15 V - 62 28 1800 td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCE = 400 V, IC = 50 A, RG = 10 Ω, VGE = 15 V TJ = 125 °C - 62 29 1680 - ns ns A/µs tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCE = 400 V, IC = 50 A, RG = 10 Ω, VGE = 15 V - 34 178 40 - ns ns ns tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCE = 400 V, IC = 50 A, RG = 10 Ω, VGE = 15 V TJ = 125 °C - 45 205 80 - ns ns ns Doc ID 018673 Rev 5 3/12 Electrical characteristics Table 7. Symbol 1. STGW50H60DF Switching energy (inductive load) Parameter Test conditions Min. Typ. Max. Unit Eon (1) Eoff (2) Ets Turn-on switching losses Turn-off switching losses Total switching losses VCE = 400 V, IC = 50 A, RG = 10 Ω, VGE = 15 V - 0.89 0.86 1.75 - mJ mJ mJ Eon (1) Eoff (2) Ets Turn-on switching losses Turn-off switching losses Total switching losses VCE = 400 V, IC = 50 A, RG = 10 Ω, VGE = 15 V TJ = 125 °C - 1.24 1.15 2.39 - mJ mJ mJ Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 20. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the same temperature (25 °C and 125 °C). 2. Turn-off losses include also the tail of the collector current. Table 8. Symbol 4/12 Collector-emitter diode Parameter Test conditions Min. Typ. Max. Unit VF Forward on-voltage IF = 30 A IF = 30 A, TJ = 125 °C - 2 1.65 2.5 V V trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF = 30 A,VR = 50 V, di/dt = 100 A/µs - 55 110 3 trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF = 30 A,VR = 50 V, di/dt = 100 A/µs, TJ =125 °C - 140 400 5.5 Doc ID 018673 Rev 5 - ns nC A - ns nC A STGW50H60DF Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Output characteristics (TJ = -40 °C) Figure 3. AM11829v1 IC200 (A) 180 V GE = 15V V GE = 20V 13V 160 Output characteristics (TJ = 25 °C) AM11830v1 IC (A) V GE = 15V 180 140 140 120 120 100 100 80 80 60 60 13V V GE = 20V 160 11V 11V 40 40 9V 20 9V 20 0 0 0 Figure 4. 1 2 3 0 VCE (V) 4 Output characteristics (TJ = 150 °C) Figure 5. AM11831v1 IC (A) VGE = 15 V 180 13 V 3 4 VCE (V) Transfer characteristics AM11832v1 IC (A) 160 VCE = 10V 140 11 V 140 2 180 VGE = 20 V 160 1 120 120 100 100 80 80 60 60 TJ = 150°C 9V 40 40 20 20 0 0 0 Figure 6. 1 2 3 VCE (V) 4 VCE(SAT) vs. junction temperature AM11833v1 VCE (V) VGE = 15V 2.8 TJ = 25°C TJ = -40°C 6 Figure 7. 7 8 9 10 11 12 VGE (V) VCE(SAT) vs. collector current AM11834v1 VCE (V) TJ = 150°C 2.8 V GE = 15V 2.6 2.6 2.4 2.2 2.2 2.0 2.0 IC = 50A 1.8 TJ = 25°C 2.4 IC = 100A TJ = -40°C 1.8 1.6 1.6 IC = 25A 1.4 1.4 1.2 -50 -25 0 25 50 75 100 125 TJ (ºC) 1.2 20 Doc ID 018673 Rev 5 30 40 50 60 70 80 90 IC (A) 5/12 Electrical characteristics Figure 8. STGW50H60DF Normalized VGE(th) vs. junction temperature Figure 9. Gate charge vs. gate-emitter voltage AM11853v1 VGE(th) norm (V) AM11836v1 VGE (V) I C = 1 mA 16 14 1.0 12 10 0.9 8 6 0.8 4 2 0.7 -50 0 -25 0 25 50 75 100 125 Figure 10. Capacitance variations (f = 1 MHz, VGE = 0) AM11837v1 C (pF) 0 TJ (ºC) 200 QG (nC) AM11838v1 V CC = 400 V, VGE = 15 V, R G = 10 Ω EON TJ = 25°C TJ = 125°C ---- 3000 Cres 1000 150 E (μJ) 3500 Coes 100 Figure 11. Switching losses vs. collector current Cies 10000 50 2500 2000 1500 EOFF 100 1000 500 10 0.1 1 10 Figure 12. Switching losses vs. gate resistance V CC = 400V, V GE = 15V, IC = 50 A, TJ = 125°C 3500 20 40 60 80 IC (A) Figure 13. Switching losses vs. temperature AM11839v1 E (μJ) 4000 0 VCE (V) AM11840v1 1400 V CC = 400V, V GE = 15V, IC = 50 A, RG = 10Ω 1300 EON 3000 EON 1200 2500 1100 2000 EOFF 1500 EOFF 1000 1000 900 500 0 800 0 6/12 10 20 30 40 RG (Ω) 25 Doc ID 018673 Rev 5 50 75 100 125 TJ (°C) STGW50H60DF Electrical characteristics Figure 14. Turn-OFF SOA Figure 15. Short circuit time & current vs. VGE AM11841v1 IC (A) AM11842v1 tsc (μs) ISC (A) V CC = 400V, TC = 25°C 20 100 350 17.5 15 10 tSC 12.5 V GE = 15 V, RG = 10Ω TC = 150 °C 1 250 10 7.5 150 0.1 5 ISC 2.5 0.01 0.1 1 10 9 VCE (V) 100 Figure 16. Diode forward current vs. forward voltage AM11843v1 VF (V) 12 13 14 50 VGE (V) 15 AM11844v1 VF (V) 2.6 2.4 2.4 TJ = -40°C 11 Figure 17. Diode forward current vs. junction temperature 2.6 2.2 10 IF = 60A 2.2 2.0 2.0 IF = 30A 1.8 1.8 TJ = 25°C 1.6 1.6 IF = 15A 1.4 1.4 TJ = 150°C 1.2 15 20 25 30 35 40 45 50 IF (A) 55 Figure 18. Maximum normalized Zth junction to case (IGBT) AM11845v1 K 1.2 -50 -25 0 25 50 75 125 TJ (ºC) Figure 19. Maximum normalized Zth junction to case (Diode) AM11846v1 1.E+00 K Single Pulse Single Pulse D=0.01 D=0.01 D=0.02 1E-01 100 1.E-01 D=0.05 D=0.02 D=0.05 D=0.1 D=0.1 D=0.2 D=0.2 D=0.5 D=0.5 1E-02 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 tP (s) 1.E-02 1.E-05 Doc ID 018673 Rev 5 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 tP (s) 7/12 Test circuits 3 STGW50H60DF Test circuits Figure 20. Test circuit for inductive load switching Figure 21. Gate charge test circuit AM01504v1 Figure 22. Switching waveform AM01505v1 Figure 23. Diode recovery time waveform VG IF trr 90% VCE Qrr di/dt 90% 10% ta tb 10% Tr(Voff) t Tcross 90% IRRM IRRM IC 10% Td(off) Td(on) Tr(Ion) Ton Tf Toff VF dv/dt AM01506v1 8/12 Doc ID 018673 Rev 5 AM01507v1 STGW50H60DF 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 9. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.50 Doc ID 018673 Rev 5 9/12 Package mechanical data STGW50H60DF Figure 24. TO-247 drawing 0075325_F 10/12 Doc ID 018673 Rev 5 STGW50H60DF 5 Revision history Revision history Table 10. Document revision history Date Revision Changes 28-Apr-2011 1 Initial release. 26-Jul-2011 2 Added: tSC and TSTG Table 2 on page 2. Updated: Table 4, Table 5, Table 6 on page 3 and Table 7 on page 4. 12-Jan-2012 3 Document status promoted from preliminary data to datasheet. 10-Feb-2012 4 Added: Section 2.1: Electrical characteristics (curves). 26-Jul-2012 5 Modified: Figure 8 on page 6. 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