STGW50HF60SD

STGW50HF60SD 60 A, 600 V, very low drop IGBT with soft and fast recovery diode Features ■ Very low on-state voltage drop ■ Low switching off ■ High current capability ■ Very soft ultra fast recovery antiparallel diode Application ■ PV inverter ■ UPS 2 3 1 TO-247 Description STGW50HF60SD is a very low drop IGBT based on new advanced planar technology, showing extremely low on-state voltage and limited turn-off losses. The overall performance makes this IGBT ideal in low frequency switches of mixed frequency topologies for PF ≤1. Table 1. Figure 1. Internal schematic diagram Device summary Order code Marking Package Packaging STGW50HF60SD GW50HF60SD TO-247 Tube December 2010 Doc ID 16818 Rev 2 1/13 www.st.com 13 Electrical ratings 1 STGW50HF60SD Electrical ratings Table 2. Absolute maximum ratings Symbol VCES Value Unit Collector-emitter voltage (VGE = 0) 600 V IC (1) Continuous collector current at TC = 25 °C 110 A IC (1) Continuous collector current at TC = 100 °C 60 A ICL (2) Turn-off latching current 60 A (3) Pulsed collector current 130 A VGE Gate-emitter voltage ±20 V PTOT Total dissipation at TC = 25 °C 284 W Diode RMS forward current at TC = 25 °C 30 A Surge non repetitive forward current tp = 10 ms sinusoidal 120 A - 55 to 150 °C ICP IF IFSM Tj 1. Parameter Operating junction temperature Calculated according to the iterative formula: T j ( max ) – T C I C ( T C ) = --------------------------------------------------------------------------------------------------------R thj – c × V CE ( sat ) ( max ) ( T j ( max ), I C ( T C ) ) 2. Vclamp = 80% of VCES, Tj =150 °C, RG=10 Ω, VGE=15 V 3. Pulse width limited by maximum junction temperature and turn-off within RBSOA Table 3. Symbol 2/13 Thermal data Parameter Value Unit Rthj-case Thermal resistance junction-case IGBT 0.44 °C/W Rthj-case Thermal resistance junction-case diode 1.25 °C/W Rthj-amb Thermal resistance junction-ambient 50 °C/W Doc ID 16818 Rev 2 STGW50HF60SD 2 Electrical characteristics Electrical characteristics (TJ=25°C unless otherwise specified) Table 4. Symbol Static Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) VCE(sat) IC = 1 mA Gate threshold voltage VCE= VGE, IC= 250 µA ICES Collector cut-off current (VGE = 0) VCE =600 V VCE =600 V, TJ=125 °C IGES Gate-emitter leakage current (VCE = 0) VGE =± 20 V Forward transconductance VCE = 15 V, IC= 30 A Table 5. Symbol Typ. Max. 600 Unit V 1.15 VGE= 15 V, IC= 30 A Collector-emitter saturation VGE= 15 V, IC= 30 A, voltage TJ =125 °C VGE(th) gfs Min. 1.45 1.05 3.5 V V 5.7 V 50 500 µA µA ± 100 nA 25 S Dynamic Parameter Test conditions Min. Typ. Max. Unit - 4300 400 100 - pF pF pF - 200 27 90 - nC nC nC Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance VCE = 25 V, f = 1 MHz, VGE=0 Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge VCE = 480 V, IC= 30 A,VGE=15 V Doc ID 16818 Rev 2 3/13 Electrical characteristics Table 6. Symbol Switching on/off (inductive load) Parameter Test conditions Min. Typ. Max. Unit td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCC = 400 V, IC = 30 A RG= 10 Ω, VGE= 15 V, (see Figure 15) - 50 20 1280 - ns ns A/µs td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCC = 400 V, IC = 30 A RG= 10 Ω, VGE= 15 V, TJ = 125 °C (see Figure 15) - 47 22 1100 - ns ns A/µs tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCC = 400 V, IC = 30 A RG= 10 Ω, VGE= 15 V, (see Figure 15) - 370 220 465 - ns ns ns tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCC = 400 V, IC = 30 A RG= 10 Ω, VGE= 15 V, TJ = 125 °C (see Figure 15) - 700 250 800 - ns ns ns Min. Typ. Max. Unit Table 7. Symbol 1. STGW50HF60SD Switching energy (inductive load) Parameter Test conditions Eon (1) Eoff (2) Ets Turn-on switching losses Turn-off switching losses Total switching losses VCC = 400 V, IC = 30 A RG= 10 Ω, VGE= 15 V, (see Figure 15) - 0.25 4.2 4.45 - mJ mJ mJ Eon (1) Eoff (2) Ets Turn-on switching losses Turn-off switching losses Total switching losses VCC = 400 V, IC = 30 A RG= 10 Ω, VGE= 15 V, TJ = 125 °C (see Figure 15) - 0.45 7.8 8.25 - mJ mJ mJ Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 15. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the same temperature (25°C and 125°C). 2. Turn-off losses include also the tail of the collector current. Table 8. Symbol 4/13 Collector-emitter diode Parameter Test conditions Min. Typ. Max. Unit VF Forward on-voltage IF = 30 A IF = 30 A, TJ = 125 °C - 2.8 1.8 - V V trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF = 30 A, VR = 50 V, di/dt = 100 A/µs (see Figure 18) - 67 140 4 - ns nC A trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF = 30 A, VR = 50 V, TJ = 125 °C, di/dt = 100 A/µs (see Figure 18) - 103 390 7 - ns nC A Doc ID 16818 Rev 2 STGW50HF60SD Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Output characteristics Figure 3. Transfer characteristics AM0922v1 IC(A) AM09222v1 IC (A) VGE=15V VGE=11V 120 100 120 100 VGE=10V 80 80 60 60 40 40 VGE=8V 20 0 0 Figure 4. 1 2 3 20 0 0 VCE(V) Collector-emitter on voltage vs temperature AM08877v1 VCE(sat) (V) 1.5 VCE=10V Figure 5. 2 4 8 6 VGE(V) 10 Collector-emitter on voltage vs collector current AM08878v1 VCE(sat) (V) VGE=15V 1.7 1.4 IC=60A 1.5 VGE=15V 1.3 1.3 TJ=-50°C 1.2 1.1 1.1 TJ=25°C 1.0 IC=30A 0.9 0.9 IC=15A 0.7 TJ=125°C 0.5 0 20 0.8 -50 Figure 6. 0 50 100 TJ(°C) Breakdown voltage vs temperature Figure 7. AM08879v1 V(BR)CES (V) 40 60 80 IC(A) Gate threshold voltage vs temperature AM08880v1 VGE(th) (norm) VGE=VCE IC = 1 mA 1.1 1.10 IC=250µA 1.0 1.05 0.9 1.00 0.8 0.95 0.90 -50 0.7 0 50 100 TJ(°C) 0.6 -50 Doc ID 16818 Rev 2 0 50 100 TJ(°C) 5/13 Electrical characteristics Figure 8. STGW50HF60SD Gate charge vs gate-emitter voltage Figure 9. AM08881v1 VGE (V) Capacitance variations AM08882v1 C (pF) Cies VCC=480V IC=30A 16 1000 12 f=1MHz VGE=0 8 Coes 100 4 Cres 0 0 80 40 120 10 160 200 0.1 Qg(nC) Figure 10. Switching losses vs collector current 1 100 10 VCE(V) Figure 11. Switching losses vs gate resistance AM08883v1 E (µJ) AM08884v1 E (µJ) Eoff VCC=400V, IC=30A VGE=15V, TJ=125°C Eoff VCC=400V, RG=10Ω VGE=15V, TJ=125°C 1000 1000 Eon Eon 100 5 15 10 20 25 100 0 IC(A) Figure 12. Switching losses vs temperature AM08885v1 E (µJ) Eoff Figure 13. 20 40 60 80 RG(Ω) Turn-off SOA AM08886v1 IC (A) 10 VCC=400V, IC=30A VGE=15V, RG=10Ω 1 1000 Eon 100 25 6/13 RG=10Ω VGE=15V TJ=150°C 0.1 50 75 100 TJ(°C) 0.01 0.1 Doc ID 16818 Rev 2 1 10 100 VCE(V) STGW50HF60SD Electrical characteristics Figure 14. Emitter-collector diode characteristics AM08887v1 IF (A) TJ =25°C typical values 30 20 TJ =125°C typical values 10 0 0 TJ =125°C maximum values 1 2 3 4 VF(V) Doc ID 16818 Rev 2 7/13 Test circuits 3 STGW50HF60SD Test circuits Figure 15. Test circuit for inductive load switching Figure 16. Gate charge test circuit AM01504v1 Figure 17. Switching waveform AM01505v1 Figure 18. Diode recovery time waveform VG IF trr 90% VCE Qrr di/dt 90% 10% ta tb 10% Tr(Voff) t Tcross 90% IRRM IRRM IC 10% Td(off) Td(on) Tr(Ion) Ton Tf Toff VF dv/dt AM01506v1 8/13 Doc ID 16818 Rev 2 AM01507v1 STGW50HF60SD 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 16818 Rev 2 9/13 Package mechanical data Table 9. STGW50HF60SD TO-247 mechanical data mm Dim. Min. Typ. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 10/13 Max. 5.50 Doc ID 16818 Rev 2 STGW50HF60SD Package mechanical data Figure 19. TO-247 drawing 0075325_F Doc ID 16818 Rev 2 11/13 Revision history 5 STGW50HF60SD Revision history Table 10. 12/13 Document revision history Date Revision Changes 15-Jan-2010 1 Initial release. 21-Dec-2010 2 Document status promoted to datasheet. Doc ID 16818 Rev 2 STGW50HF60SD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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