STGW60H60DLFB

STGW60H60DLFB STGWT60H60DLFB Trench gate field-stop IGBT, HB series 600 V, 60 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current • VCE(sat) = 1.6 V (typ.) @ IC = 60 A 2 • Tight parameters distribution 3 3 1 2 1 TO-247 • Safe paralleling • Low thermal resistance • Low VF soft recovery co-packaged diode TO-3P • Lead free package Figure 1. Internal schematic diagram Applications • Induction heating • Microwave oven C (2 or TAB) • Resonant converters Description G (1) This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the new "HB" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. E (3) Table 1. Device summary Order code Marking Package Packaging STGW60H60DLFB GW60H60DLFB TO-247 Tube STGWT60H60DLFB GWT60H60DLFB TO-3P Tube February 2014 This is information on a product in full production. DocID024403 Rev 3 1/17 www.st.com 17 Contents STGW60H60DLFB, STGWT60H60DLFB Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 DocID024403 Rev 3 STGW60H60DLFB, STGWT60H60DLFB 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VCES Parameter Collector-emitter voltage (VGE = 0) Value Unit 600 V (1) A IC Continuous collector current at TC = 25 °C IC Continuous collector current at TC = 100 °C 60 A ICP(2) Pulsed collector current 240 A VGE Gate-emitter voltage ±20 V (1) A 80 IF Continuous forward current at TC = 25 °C IF Continuous forward current at TC = 100 °C 60 A IFP(2) Pulsed forward current 240 A PTOT Total dissipation at TC = 25 °C 375 W TSTG Storage temperature range - 55 to 150 °C Operating junction temperature - 55 to 175 °C Value Unit TJ 80 1. Current level is limited by bond wires 2. Pulse width limited by maximum junction temperature Table 3. Thermal data Symbol Parameter RthJC Thermal resistance junction-case IGBT 0.4 °C/W RthJC Thermal resistance junction-case diode 1.47 °C/W RthJA Thermal resistance junction-ambient 50 °C/W DocID024403 Rev 3 3/17 Electrical characteristics 2 STGW60H60DLFB, STGWT60H60DLFB Electrical characteristics TJ = 25 °C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA Min. VF IF = 60 A TJ = 125 °C 1.55 IF = 60 A TJ = 175 °C 1.5 VCE = VGE, IC = 1 mA ICES Collector cut-off current (VGE = 0) IGES Gate-emitter leakage current (VCE = 0) V 1.85 1.8 Gate threshold voltage 2 1.75 IF = 60 A VGE(th) Unit V 1.6 VGE = 15 V, IC = 60 A Collector-emitter saturation TJ = 125 °C voltage VGE = 15 V, IC = 60 A TJ = 175 °C Forward on-voltage Max. 600 VGE = 15 V, IC = 60 A VCE(sat) Typ. 5 6 2.1 V 7 V VCE = 600 V 25 µA VGE = ± 20 V 250 nA Table 5. Dynamic characteristics Symbol 4/17 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 VCC = 480 V, IC = 60 A, VGE = 15 V, see Figure 27 Qge Gate-emitter charge Qgc Gate-collector charge DocID024403 Rev 3 Min. Typ. Max. Unit - 7792 - pF - 262 - pF - 158 - pF - 306 - nC - 126 - nC - 58 - nC STGW60H60DLFB, STGWT60H60DLFB Electrical characteristics Table 6. IGBT switching characteristics (inductive load) Symbol td(off) tf Parameter Test conditions Turn-off delay time Current fall time Eoff(1) Turn-off switching losses td(off) Turn-off delay time tf Eoff(1) Current fall time Turn-off switching losses VCE = 400 V, IC = 60 A, RG = 5 Ω, VGE = 15 V, see Figure 25 VCE = 400 V, IC = 60 A, RG = 5 Ω, VGE = 15 V, TJ = 175 °C, see Figure 25 Min. Typ. Max. 160 Unit ns - 18 - ns - 626 - µJ 184 ns - 117 - ns - 1017 - µJ Unit 1. Turn-off losses include also the tail of the collector current. Table 7. IGBT switching characteristics (capacitive load) Symbol Eoff(1) Parameter Turn-off switching losses Test conditions Min. Typ. Max. VCC = 320 V, RG = 10 Ω, IC = 60 A, L = 100 µH, Csnub = 20 nF, see Figure 26 - 450 - VCC = 320 V, RG = 10 Ω, IC = 60 A, L = 100 µH, Csnub = 20 nF, TJ = 175 °C, see Figure 26 µJ - 785 - 1. Turn-off losses include also the tail of the collector current. DocID024403 Rev 3 5/17 Electrical characteristics 2.1 STGW60H60DLFB, STGWT60H60DLFB Electrical characteristics (curves) Figure 2. Power dissipation vs. case temperature GIPD021020131435FSR Ptot (W) 350 Figure 3. Collector current vs. case temperature GIPD021020131439FSR IC (A) 80 70 300 60 250 50 200 40 150 30 100 20 50 10 0 0 50 25 0 0 75 100 125 150 175 TC(°C) Figure 4. Output characteristics (TJ = 25°C) GIPD021020131443FSR IC (A) VGE=15V VGE ≥ 15V, TJ ≤ 175 °C 50 25 75 100 125 150 175 TC(°C) Figure 5. Output characteristics (TJ = 175°C) GIPD021020131448FSR IC (A) 11V 11V VGE=15V 200 200 150 150 100 100 9V 9V 50 50 7V 0 0 1 2 4 3 Figure 6. VCE(sat) vs. junction temperature GIPD021020131457FSR VCE(sat) (V) VGE= 15V 2.6 0 0 VCE(V) IC= 120A 2 1 3 4 VCE(V) Figure 7. VCE(sat) vs. collector current GIPD021020131500FSR VCE(sat) (V) 2.4 TJ= 175°C VGE= 15V 2.2 2.4 TJ= 25°C 2 2.2 1.8 2 IC= 60A 1.6 C 1.8 1.6 IC= 30A 1.4 1.2 -50 6/17 TJ= -40°C 1.4 1.2 1.0 0 50 100 150 TJ(°C) 0.8 DocID024403 Rev 3 0 20 40 60 80 100 120 IC(A) STGW60H60DLFB, STGWT60H60DLFB Electrical characteristics Figure 8. Collector current vs. switching frequency GIPD021020131506FSR IC (A) Figure 9. Forward bias safe operating area GIPD021020131512FSR IC (A) 120 TC= 80°C 100 100 10 μs TC= 100°C 80 10 100 μs 60 1 ms 40 Single pulse Tc= 25°C, TJ