STGW60H65DFB-4

STGW60H65DFB-4 Datasheet Trench gate field-stop 650 V, 60 A high speed HB series IGBT Features 1 2 4 3 TO247-4 C(1, TAB) • Maximum junction temperature: TJ = 175 °C • • Excellent switching performance thanks to the extra driving kelvin pin Low VCE(sat) = 1.6 V (typ.) @ IC = 60 A • • • • • Minimized tail current Tight parameter distribution Safe paralleling Low thermal resistance Very fast soft recovery antiparallel diode Applications G(4) • • K(3) E(2) NG4K3E2C1_TAB Photovoltaic inverters High-frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. A faster switching event can be achieved by the Kelvin pin, which separates power path from driving signal. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGW60H65DFB-4 Product summary Order code STGW60H65DFB-4 Marking G60H65DFB Package TO247-4 Packing Tube DS11665 - Rev 3 - June 2019 For further information contact your local STMicroelectronics sales office. www.st.com STGW60H65DFB-4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0 V) 650 V Continuous collector current at TC = 25 °C 80 (1) Continuous collector current at TC = 100 °C 60 Pulsed collector current 240 Gate-emitter voltage ±20 Transient gate-emitter voltage ±30 Continuous forward current at TC = 25 °C 80(1) Continuous forward current at TC = 100 °C 60 IFP (2) Pulsed forward current 240 A PTOT Total power dissipation at TC = 25 °C 375 W TSTG Storage temperature range -55 to 150 Operating junction temperature range -55 to 175 VCES IC ICP (2) VGE IF TJ Parameter A A V A °C 1. Current level is limited by bond wires. 2. Pulse width is limited by maximum junction temperature. Table 2. Thermal data Symbol DS11665 - Rev 3 Parameter Value RthJC Thermal resistance junction-case IGBT 0.4 RthJC Thermal resistance junction-case diode 1.14 RthJA Thermal resistance junction-ambient Unit °C/W 50 page 2/15 STGW60H65DFB-4 Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 3. Static characteristics Symbol Parameter V(BR)CES Collector-emitter breakdown voltage VCE(sat) Collector-emitter saturation voltage Test conditions VGE = 0 V, IC = 2 mA Min. Forward on-voltage 1.6 VGE = 15 V, IC = 60 A, TJ = 125 °C 1.75 VGE = 15 V, IC = 60 A, TJ = 175 °C 1.85 2 IF = 60 A, TJ = 125 °C 1.7 IF = 60 A, TJ = 175 °C 1.6 Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current IGES Gate-emitter leakage current 5 Unit V VGE = 15 V, IC = 60 A VGE(th) Max. 650 IF = 60 A VF Typ. 6 2.0 V 2.6 V 7 V VGE = 0 V, VCE = 650 V 25 µA VCE = 0 V, VGE = ±20 V ±250 nA Unit Table 4. Dynamic characteristics Symbol DS11665 - Rev 3 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge Test conditions VCE= 25 V, f = 1 MHz, VGE = 0 V VCC = 520 V, IC = 60 A, VGE = 0 to 15 V (see Figure 29. Gate charge test circuit) Min. Typ. Max. - 7792 - - 262 - - 158 - - 306 - - 126 - - 58 - nF nC page 3/15 STGW60H65DFB-4 Electrical characteristics Table 5. IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time - 65 - ns Current rise time - 26 - ns - 1846 - A/µs - 261 - ns - 21 - ns Turn-on current slope Turn-off-delay time Current fall time VCE = 400 V, IC = 60 A, VGE = 15 V, RG = 10 Ω (see Figure 28. Test circuit for inductive load switching) (1) Turn-on switching energy - 346 - µJ Eoff (2) Turn-off switching energy - 1161 - µJ Total switching energy - 1507 - µJ Turn-on delay time - 61 - ns Current rise time - 30 - ns - 1640 - A/µs - 284 - ns - 45 - ns - 644 - μJ Eon Ets td(on) tr (di/dt)on td(off) tf Turn-on current slope Turn-off-delay time Current fall time VCE = 400 V, IC = 60 A, VGE = 15 V, RG = 10 Ω TJ = 175 °C (see Figure 28. Test circuit for inductive load switching ) Eon (1) Turn-on switching energy (2) Turn-off switching energy - 1633 - μJ Total switching energy - 2277 - μJ Eoff Ets 1. Including the reverse recovery of the diode. 2. Including the tail of the collector current. Table 6. Diode switching characteristics (inductive load) Symbol DS11665 - Rev 3 Parameter trr Reverse recovery time Qrr Reverse recovery charge Test conditions IF = 60 A, VR = 400 V, VGE = 15 V, di/dt = 1000 A/µs (see Figure 28. Test circuit for inductive load switching) Min. Typ. Max. Unit - 60 - ns - 99 - nC - 3.3 - A - 187 - A/µs Irrm Reverse recovery current dIrr/dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy - 68 - µJ trr Reverse recovery time - 310 - ns Qrr Reverse recovery charge - 1550 - nC Irrm Reverse recovery current - 10 - A dIrr/dt Peak rate of fall of reverse recovery current during tb - 59 - A/µs Err Reverse recovery energy - 674 - µJ IF = 60 A, VR = 400 V, VGE = 15 V, di/dt = 1000 A/µs, TJ = 175 °C (see Figure 28. Test circuit for inductive load switching) page 4/15 STGW60H65DFB-4 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Power dissipation vs. case temperature Figure 2. Collector current vs. case temperature GIPD270820131401FSR Ptot (W) GIPD270820131347FSR IC (A) 80 300 60 200 40 100 20 VGE= 15 V, T J= 175 °C 0 0 25 50 75 100 125 150 Figure 3. Output characteristics (TJ = 25 °C) GIPD230820131147FSR IC (A) V GS = 13, 15 V 200 0 0 TC(°C) 25 50 75 100 125 150 Figure 4. Output characteristics (TJ = 175 °C) IC (A) GIPD230820131205FSR V GS = 13, 15 V V GS = 11 V 160 120 120 V GS = 9 V 80 80 40 40 0 0 1 2 3 4 V CE (V) Figure 5. VCE(sat) vs. junction temperature GIPD021020131457FSR VCE(sat) (V) VGE= 15 V 2.6 IC= 120 A 2.4 0 0 V GS = 9 V V GS = 7V 1 2 3 4 V CE (V) Figure 6. VCE(sat) vs. collector current GIPD270820131423FSR VCE(sat) (V) VGE= 15 V 2.4 2.2 2.2 TJ= 25 °C 2.0 2.0 IC= 60 A TJ= 175 °C 1.8 1.8 1.6 IC= 30 A 1.6 TJ= -40 °C 1.4 1.4 1.2 -50 TC(°C) 200 V GS = 11 V 160 DS11665 - Rev 3 VGE= 15V, T J= 175 °C 0 50 100 150 Tj(°C) 1.2 0 20 40 60 80 100 IC(A) page 5/15 STGW60H65DFB-4 Electrical characteristics (curves) Figure 7. Collector current vs. switching frequency IC (A) IGBT130320171131CCS Figure 8. Forward bias safe operating area IC (A) GIPG300320151744ALS 10 2 1µs VC TC = 80 °C E(s 100 at) li m it 120 80 TC = 100 °C 10µs 60 10 1 100µs 40 20 Rectangular current shape (duty cycle = 0.5, VCC = 400 V, RG = 10 Ω, VGE = 0/15 V, TJ = 175 °C) 0 10 0 10 1 0 f (kHz) 10 2 Figure 9. Transfer characteristics GIPD270820131335FSR IC (A) 200 Tj ≤175 °C Tc = 25 °C VGE = 15 V single pulse 1 10 10 0 10 1ms 10 2 VCE(V) Figure 10. Diode VF vs. forward current VF (V) GIPG170415EWF7WDVF 2.8 V CE = 6 V 160 2.4 120 2.0 80 1.6 T j = - 40 °C T j = 25 °C T j = 175 °C 40 T j = 175 °C 0 5 6 1.2 T j = 25 °C 7 8 9 10 V GE (V) Figure 11. Normalized VGE(th) vs. junction temperature GIPD280820131503FSR VGE(th) (norm) 0.8 20 40 60 80 100 I F (A) Figure 12. Normalized V(BR)CES vs. junction temperature GIPD280820131415FSR V(BR)CES (norm) IC= 1 mA 1.1 1.0 IC= 2 mA 0.9 1.0 0.8 0.7 0.6 -50 DS11665 - Rev 3 0 50 100 150 TJ(°C) 0.9 -50 0 50 100 150 TJ(°C) page 6/15 STGW60H65DFB-4 Electrical characteristics (curves) Figure 13. Capacitance variations Figure 14. Gate charge vs. gate-emitter voltage GIPD280820131518FSR C(pF) GIPD280820131507FSR VGE (V) f = 1 MHz Vcc= 520 V, Ic= 60 A, IG= 1 mA 14 10000 Cies 12 10 1000 8 6 100 10 0.1 1 10 2 0 VCE(V) 100 Figure 15. Switching energy vs. collector current E (µJ) 4 Coes Cres 3200 E (µJ) Eoff 2400 1400 1600 1000 Eon 0 0 30 60 90 200 4 IC (A) IGBT130320171406SLT VCC = 400 V, IC = 60 A, RG = 10 Ω, VGE = 15 V Eoff 1400 Eon 600 Figure 17. Switching energy vs. temperature E (µJ) IGBT130320171132SLG VCC = 400 V, IC = 60 A, VGE = 15 V, TJ = 175 °C 1800 Eoff 800 50 100 150 200 250 300 350 Qg(nC) Figure 16. Switching energy vs. gate resistance IGBT130320171132SLC VGE = 15 V, TJ = 175 °C, VCC = 400 V, RG = 10 Ω 0 8 12 16 20 RG (Ω) Figure 18. Switching energy vs. collector emitter voltage E (µJ) IGBT130320171134SLV VGE = 15 V, TJ = 175 °C, IC = 60 A, RG = 10 Ω 1700 1000 1200 600 700 Eoff Eon 200 0 DS11665 - Rev 3 Eon 50 100 150 TJ (°C) 200 150 300 450 VCE (V) page 7/15 STGW60H65DFB-4 Electrical characteristics (curves) Figure 19. Switching times vs. collector current t (ns) IGBT130320171134STC VCC = 400 V, VGE = 15 V, RG = 10 Ω, TJ = 175 °C Figure 20. Switching times vs. gate resistance t (ns) IGBT130320171506STR VCC = 400 V, VGE = 15 V, IC = 60 A, TJ = 175 °C t t d(off) t d(on) 10 2 d(off) 10 2 t tr 10 1 0 t r t f f 40 t 80 IC (A) 10 1 4 8 12 16 d(on) 20 RG (Ω) Figure 21. Reverse recovery current vs. diode current slope Figure 22. Reverse recovery time vs. diode current slope GIPD280820131635FSR Irm (A) 80 Vr= 400V, IF = 60A trr (ns) GIPD280820131643FSR Vr = 400 V, I F = 60 A 300 70 TJ= 175°C 250 60 50 200 40 150 TJ = 175 °C TJ= 25°C 30 100 20 50 10 0 TJ = 25 °C 0 500 1000 1500 2000 2500di/dt(A/µs) Figure 23. Reverse recovery charge vs. diode current slope GIPD280820131635FSR Irm (A) 80 Vr= 400V, IF = 60A TJ= 175°C 1000 1500 2000 2500 di/dt(A/µs) Figure 24. Reverse recovery energy vs. diode current slope GIPD280820131656FSR Err (µJ) TJ = 175 °C 700 60 600 50 500 Vr = 400 V, I F = 60 A 40 TJ= 25°C 30 400 300 20 200 10 100 0 500 800 70 DS11665 - Rev 3 0 0 0 500 1000 1500 2000 2500di/dt(A/µs) 0 0 TJ = 25 °C 500 1000 1500 2000 2500 di/dt(A/µs) page 8/15 STGW60H65DFB-4 Electrical characteristics (curves) Figure 25. Thermal impedance for IGBT ZthTO2T_A K 10-1 Zth Zth= k*R k R thj-c thj-C δδ==tptp/ Ƭ /Ƭ tpp 10-2 10-5 10-4 10-3 10-2 ƬƬ 10-1 tp (s) Figure 26. Thermal impedance for diode DS11665 - Rev 3 page 9/15 STGW60H65DFB-4 Test circuits 3 Test circuits Figure 27. Test circuit for inductive load switching Figure 28. Gate charge test circuit VCC A A 12 V C 47 kΩ L=100 μH G E 1 kΩ 100 nF B B 3.3 μF C G 1000 μF VCC Vi ≤ V D.U.T RG K GMAX 2200 µF IG=CONST D.U.T. 100 Ω 2.7 kΩ VG E 47 kΩ PW GND1 (signal ground) GND2 (power ground) 1 kΩ HB650_4_leads GIPG030320161351SA GND1 (signal ground) GND2 (power ground) Figure 30. Diode reverse recovery waveform Figure 29. Switching waveform 90% 10% VG 90% VCE 10% tr(Voff) 10 tcross 90% IC td(on) ton td(off) tr(Ion) 10% tf toff AM01506v1 GADG140820170937SA DS11665 - Rev 3 page 10/15 STGW60H65DFB-4 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO247-4 package information Figure 31. TO247-4 package outline 8405626_2 DS11665 - Rev 3 page 11/15 STGW60H65DFB-4 TO247-4 package information Table 7. TO247-4 mechanical data Dim. mm Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 b1 1.15 b2 0 0.20 c 0.59 0.66 c1 0.58 0.60 0.62 D 20.90 21.00 21.10 D1 16.25 16.55 16.85 D2 1.05 1.20 1.35 D3 24.97 25.12 25.27 E 15.70 15.80 15.90 E1 13.10 13.30 13.50 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 2.44 2.54 2.64 e1 4.98 5.08 5.18 L 19.80 19.92 20.10 P 3.50 3.60 3.70 1.29 1.20 P1 7.40 P2 2.40 Q 5.60 S DS11665 - Rev 3 1.25 2.50 2.60 6.00 6.15 T 9.80 10.20 U 6.00 6.40 page 12/15 STGW60H65DFB-4 Revision history Table 8. Document revision history Date Revision 30-May-2016 1 Changes First release. Updated Table Absolute maximum ratings and Table IGBT switching characteristics (inductive load). 21-Mar-2017 2 Updated Section STGW60H65DFB-4 electrical characteristics curves. Minor text changes Updated title. 20-Jun-2019 3 Updated Section Features and schematic diagram in cover page. Updated Table 1. Absolute maximum ratings. Minor text changes. DS11665 - Rev 3 page 13/15 STGW60H65DFB-4 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.1 TO247-4 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 DS11665 - Rev 3 page 14/15 STGW60H65DFB-4 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS11665 - Rev 3 page 15/15