STGW60H65DRF
60 A, 650 V field stop trench gate IGBT with Ultrafast diode
Datasheet - production data
Applications
Photovoltaic inverters
Uninterruptible power supply
Welding
Power factor correction
2
High switching frequency converters
3
1
Description
TO-247
Figure 1. Internal schematic diagram
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. This IGBT is the result of a compromise
between conduction and switching losses,
maximizing the efficiency of high switching
frequency converters. Furthermore, a slightly
positive VCE(sat) temperature coefficient and very
tight parameter distribution result in easier
paralleling operation.
Features
Very high speed switching
Tight parameters distribution
Safe paralleling
Low thermal resistance
6 µs short-circuit withstand time
Ultrafast soft recovery antiparallel diode
Table 1. Device summary
Order code
Marking
Package
Packaging
STGW60H65DRF
GW60H65DRF
TO-247
Tube
April 2013
This is information on a product in full production.
DocID022346 Rev 6
1/13
www.st.com
13
Electrical ratings
1
STGW60H65DRF
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Value
Unit
Collector-emitter voltage (VGE = 0)
650
V
IC
Continuous collector current at TC = 25 °C
120
A
IC
Continuous collector current at TC = 100 °C
60
A
Pulsed collector current
240
A
Gate-emitter voltage
±20
V
Continuous forward current at TC = 25 °C
120
Continuous forward current at TC = 100 °C
60
IFP(1)
Pulsed forward current
240
A
PTOT
Total dissipation at TC = 25 °C
420
W
6
µs
- 55 to 175
°C
VCES
ICP (1)
VGE
IF
tSC
TSTG
TJ
1.
Parameter
A
Short-circuit withstand time at VCC = 400 V,
VGE = 15 V
Storage temperature range
Operating junction temperature
Pulse width limited by maximum junction temperature and turn-off within RBSOA.
Table 3. Thermal data
Symbol
2/13
Parameter
Value
Unit
RthJC
Thermal resistance junction-case IGBT
0.35
°C/W
RthJC
Thermal resistance junction-case diode
1.38
°C/W
RthJA
Thermal resistance junction-ambient
50
°C/W
DocID022346 Rev 6
STGW60H65DRF
2
Electrical characteristics
Electrical characteristics
TJ = 25 °C unless otherwise specified.
Table 4. Static
Symbol
Parameter
Test conditions
Collector-emitter
V(BR)CES breakdown voltage
(VGE = 0)
IC = 2 mA
Min.
Typ.
Max.
650
Unit
V
VCE(sat)
VGE = 15 V, IC = 60 A
Collector-emitter saturation
VGE = 15 V, IC = 60 A
voltage
TJ = 125 °C
1.9
2.4
VGE(th)
Gate threshold voltage
VCE = VGE, IC = 1 mA
ICES
Collector cut-off current
(VGE = 0)
VCE = 650 V
25
µA
IGES
Gate-emitter leakage
current (VCE = 0)
VGE = ± 20 V
250
nA
Max.
Unit
V
2.1
6.0
V
Table 5. Dynamic
Symbol
Cies
Coes
Cres
Qg
Parameter
Test conditions
Input capacitance
Output capacitance
Reverse transfer
capacitance
VCE = 25 V, f = 1 MHz,
VGE = 0
Min.
Typ.
-
7150
275
140
-
pF
pF
pF
-
217
-
nC
-
67
-
nC
-
97
-
nC
Min.
Typ.
Max.
Unit
-
ns
ns
A/µs
Total gate charge
VCC = 400 V, IC = 60 A,
VGE = 15 V
Qge
Gate-emitter charge
Qgc
Gate-collector charge
Table 6. Switching on/off (inductive load)
Symbol
Parameter
Test conditions
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCE = 400 V, IC = 60 A,
RG = 10 , VGE = 15 V
-
85
33
1800
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCE = 400 V, IC = 60 A,
RG = 10 , VGE = 15 V
TJ = 125 °C
-
82
35
1680
-
ns
ns
A/µs
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCE = 400 V, IC = 60 A,
RG = 10 , VGE = 15 V
-
34
178
30
-
ns
ns
ns
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCE = 400 V, IC = 60 A,
RG = 10 , VGE = 15 V
TJ = 125 °C
-
45
205
70
-
ns
ns
ns
DocID022346 Rev 6
3/13
Electrical characteristics
STGW60H65DRF
Table 7. Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Eon (1)
Eoff (2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCE = 400 V, IC = 60 A,
RG = 10 , VGE = 15 V
-
0.94
1.06
2.0
-
mJ
mJ
mJ
Eon (1)
Eoff (2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCE = 400 V, IC = 60 A,
RG = 10 , VGE = 15 V
TJ = 125 °C
-
1.48
1.4
2.88
-
mJ
mJ
mJ
1. Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 23. If the IGBT is offered
in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the
same temperature (25 °C and 125 °C).
2. Turn-off losses include also the tail of the collector current.
Table 8. Collector-emitter diode
Symbol
4/13
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VF
Forward on-voltage
IF = 60 A
IF = 60 A, TJ = 150 °C
-
3.7
2.2
4.8
V
V
trr
Qrr
Irrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
IF = 60 A, VR = 400 V,
di/dt = 1700 A/µs
-
19
200
15.5
trr
Qrr
Irrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
IF = 60 A, VR = 400 V,
di/dt = 1630 A/µs
TJ = 125 °C
-
34
780
46
DocID022346 Rev 6
-
ns
nC
A
-
ns
nC
A
STGW60H65DRF
2.1
Electrical characteristics
Electrical characteristics (curves)
Figure 2. Output characteristics (TJ = - 40 °C)
AM11847v1
IC (A)
V GE = 15V
220
200
Figure 3. Output characteristics (TJ = 25 °C)
V GE = 15V
220
13V
V GE = 20V
13V
V GE = 20V
200
180
180
11V
160
160
140
140
120
120
100
100
80
80
60
60
40
11V
40
9V
20
0
AM11848v1
IC (A)
0
1
2
3
9V
20
VCE (V)
4
0
0
Figure 4. Output characteristics (TJ = 150 °C)
AM11849v1
IC (A)
V GE = 15V
220
200
1
2
3
VCE (V)
4
Figure 5. Transfer characteristics
AM11850v1
IC (A)
220
13V
V GE = 20V
200
V CE = 10V
180
180
160
160
11V
140
140
120
120
100
100
80
80
TJ = 150°C
60
60
9V
40
40
20
20
0
0
0
1
2
3
Figure 6. VCE(SAT) vs. junction temperature
AM11851v1
VCE (V)
2.8
10
11
12
VGE (V)
Figure 7. VCE(SAT) vs. collector current
AM11852v1
VCE (V)
TJ = 150°C
V GE = 15V
TJ = 25°C
2.2
2.0
IC = 60A
TJ = -40°C
1.8
1.6
IC = 30A
1.4
1.4
1.2
-50
9
2.4
1.8
1.6
8
2.6
IC = 120A
2.2
2.0
7
2.8
2.6
2.4
TJ = -40°C
6
VCE (V)
4
TJ = 25°C
-25
0
25
50
75
100
125
TJ (ºC)
1.2
30
DocID022346 Rev 6
40
50
60
70
80
90
100
110
IC (A)
5/13
Electrical characteristics
STGW60H65DRF
Figure 8. Normalized VGE(th) vs. junction
temperature
AM11853v1
VGE(th)
norm (V)
Figure 9. Gate charge vs. gate-emitter voltage
AM11854v1
VGE (V)
I C = 1 mA
16
14
1.0
12
10
0.9
8
6
0.8
4
2
0.7
-50
0
-25
0
25
50
75
100
125
TJ (ºC)
Figure 10. Capacitance variations (f = 1 MHz,
VGE = 0)
AM11855v1
C (pF)
0
200
Qg (nC)
AM12736v1
VCC = 400 V, VGE = 15 V, RG = 10 Ω
TJ = 25 °C
TJ = 125 °C
3000
Cres
1000
150
E (µJ)
3500
Coes
100
Figure 11. Switching losses vs. collector
current
Cies
10000
50
EON
---
2500
2000
1500
100
EOFF
1000
500
10
0.1
1
10
Figure 12. Switching losses vs. gate resistance
AM12737v1
E (µJ)
VCC = 400V, VGE = 15V,
IC = 60A, TJ = 125 °C
3500
0
20
VCE (V)
40
60
80
100
IC (A)
Figure 13. Switching losses vs. temperature
AM12738v1
E (µJ)
VCC = 400V, VGE = 15V,
IC = 60 A, RG = 10 Ω
1600
1500
1400
3000
EON
1300
2500
EOFF
1200
EOFF
1100
2000
1000
EON
1500
900
1000
6/13
0
10
20
30
40
RG (Ω)
800
25
DocID022346 Rev 6
50
75
100
125
TJ (°C)
STGW60H65DRF
Electrical characteristics
Figure 14. Turn-OFF SOA
Figure 15. Short circuit time & current vs. VGE
AM11859v1
IC (A)
AM11860v1
tsc (μs)
ISC (A)
V CC = 400V, TC = 25°C
20
100
350
17.5
tSC
15
10
250
12.5
V GE = 15 V, RG = 10Ω
TC = 150 °C
1
10
7.5
150
0.1
5
0.01
0.1
1
10
VCE (V)
100
Figure 16. Diode forward current vs. forward
voltage
AM12739v1
VF (V)
2.5
ISC
9
10
11
12
13
14
15
50
VGE (V)
Figure 17. Diode forward current vs. junction
temperature
AM12740v1
VF (V)
Tj = - 40°C
4.5
4.5
Tj = 25°C
IF = 15 A
Tj = 150°C
4.0
IF = 30 A
4.0
IF = 60 A
3.5
3.5
3.0
3.0
2.5
2.5
2.0
2.0
1.5
1.5
1.0
10
15
20
25
30
35
40
45
50
55
60
IF (A)
Figure 18. Reverse recovery current as a
function of diode current slope
AM12741v1
Irm (A)
1.0
-50
75
100
125
150 TJ (°C)
AM12742v1
---
20
50
16
40
12
30
8
20
1250
50
trr (ns)
60
750
25
Figure 19. Reverse recovery time as a function
of diode current slope
VCC = 400V, VGE = 15V, IC = 60A
4
250
0
VCC = 400V, VGE = 15V, IC = 60A
24
TJ = 25 °C
TJ = 125 °C
-25
1750
di/dt (A/µs)
10
250
DocID022346 Rev 6
TJ = 25 °C
TJ = 125 °C
750
---
1250
1750
di/dt (A/µs)
7/13
Electrical characteristics
STGW60H65DRF
Figure 20. Reverse recovery charge as a
function of diode current slope
AM12743v1
Qrr (nC)
650
550
Figure 21. Maximum normalized Zth junction to
case (IGBT)
AM11861v1
K
VCC = 400V, VGE = 15V, IC = 60A
TJ = 25 °C
TJ = 125 °C
---
Single
Pulse
D=0.01
450
D=0.02
1E-01
D=0.05
350
D=0.1
250
D=0.2
D=0.5
150
50
250
750
1250
1750
di/dt (A/µs)
1E-02
1.E-05
Figure 22. Maximum normalized Zth junction to
case (Diode)
8/13
DocID022346 Rev 6
1.E-04
1.E-03
1.E-02
1.E-01
tP (s)
STGW60H65DRF
3
Test circuits
Test circuits
Figure 23. Test circuit for inductive load
switching
Figure 24. Gate charge test circuit
AM01504v1
Figure 25. Switching waveform
AM01505v1
Figure 26. Diode recovery time waveform
VG
IF
trr
90%
VCE
Qrr
di/dt
90%
10%
ta
tb
10%
Tr(Voff)
t
Tcross
90%
IRRM
IRRM
IC
10%
Td(off)
Td(on)
Tr(Ion)
Ton
Tf
Toff
VF
dv/dt
AM01506v1
DocID022346 Rev 6
AM01507v1
9/13
Package mechanical data
4
STGW60H65DRF
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 9. TO-247 mechanical data
mm.
Dim.
Min.
Typ.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
5.45
L2
10/13
Max.
5.60
18.50
P
3.55
3.65
R
4.50
5.50
S
5.30
5.50
DocID022346 Rev 6
5.70
STGW60H65DRF
Package mechanical data
Figure 27. TO-247 drawing
0075325_G
DocID022346 Rev 6
11/13
Revision history
5
STGW60H65DRF
Revision history
Table 10. Document revision history
Date
Revision
Changes
11-Oct-2011
1
Initial release.
06-Jun-2012
2
Document status promoted from preliminary data production data.
Added: Section 2.1: Electrical characteristics (curves) on page 5.
19-Jun-2012
3
Updated parameters in Table 2.
26-Jul-2012
4
Updated parameters in Table 2.
21-Jan-2013
5
Modified VF test conditions, typ. and max values Table 8 on page 4.
02-Apr-2013
6
Modified:
– PTOT value Table 2 on page 2.
– Eon and Ets typical values Table 7 on page 4.
12/13
DocID022346 Rev 6
STGW60H65DRF
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
ST PRODUCTS ARE NOT AUTHORIZED FOR USE IN WEAPONS. NOR ARE ST PRODUCTS DESIGNED OR AUTHORIZED FOR USE
IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH
PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR
ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED
FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN
WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE,
AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS.
PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE
CORRESPONDING GOVERNMENTAL AGENCY.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2013 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
DocID022346 Rev 6
13/13