STGW60H65F

STGW60H65F 60 A, 650 V field stop trench gate IGBT Datasheet − production data Features ■ High speed switching ■ Tight parameter distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time ■ Lead free package 2 3 1 Applications TO-247 ■ Photovoltaic inverters ■ Uninterruptible power supply ■ Welding ■ Power factor correction ■ High switching frequency converters Figure 1. Internal schematic diagram Description Using advanced proprietary trench gate and field stop structure, this IGBT leads to an optimized compromise between conduction and switching losses maximizing the efficiency for high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and a very tight parameter distribution result in an easier paralleling operation. Table 1. Device summary Order code Marking Package Packaging STGW60H65F GW60H65F TO-247 Tube July 2012 This is information on a product in full production. Doc ID 019012 Rev 4 1/12 www.st.com 12 Electrical ratings 1 STGW60H65F Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0) 650 V IC Continuous collector current at TC = 25 °C 120 A IC Continuous collector current at TC = 100 °C 60 A Pulsed collector current 240 A VGE Gate-emitter voltage ± 20 V PTOT Total dissipation at TC = 25 °C 360 W 6 µs - 55 to 150 °C VCES ICP (1) tSC TSTG TJ 1. Short-circuit withstand time at VCC = 400 V, VGE = 15 V Storage temperature range Operating junction temperature Pulse width limited by maximum junction temperature and turn-off within RBSOA Table 3. Symbol 2/12 Parameter Thermal data Parameter RthJC Thermal resistance junction-case RthJA Thermal resistance junction-ambient Doc ID 019012 Rev 4 Value Unit 0.35 °C/W 50 °C/W STGW60H65F 2 Electrical characteristics Electrical characteristics TJ = 25 °C unless otherwise specified. Table 4. Symbol Static Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA Min. Typ. Max. 650 Unit V VGE = 15 V, IC = 60 A Collector-emitter saturation VGE = 15 V, IC = 60 A voltage TJ = 125 °C 1.9 VCE(sat) VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 6.0 ICES Collector cut-off current (VGE = 0) VCE = 650 V 25 µA IGES Gate-emitter leakage current (VCE = 0) VGE = ± 20 V 250 nA Max. Unit - pF pF pF Table 5. Symbol Qg Parameter Test conditions VCE = 25 V, f = 1 MHz, VGE=0 Min. Typ. - 7150 275 140 Total gate charge VCC = 400 V, IC = 60 A, VGE = 15 V Qge Gate-emitter charge Qgc Gate-collector charge Table 6. Symbol V Dynamic Input capacitance Output capacitance Reverse transfer capacitance Cies Coes Cres V 2.1 217 nC 67 nC 97 nC Switching on/off (inductive load) Parameter Test conditions Min. Typ. (1) Turn-on delay time td(on) (1) Current rise time tr (di/dt)on (1) Turn-on current slope VCE = 400 V, IC = 60 A, RG = 10 Ω, VGE = 15 V - 65 30 2000 td(on) (1) tr (1) (di/dt)on(1) VCE = 400 V, IC = 60 A, RG = 10 Ω, VGE = 15 V TJ = 125 °C - 63 33 1800 Turn-on delay time Current rise time Turn-on current slope Doc ID 019012 Rev 4 Max. Unit - ns ns A/µs - ns ns A/µs 3/12 Electrical characteristics Table 6. STGW60H65F Switching on/off (inductive load) tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCE = 400 V, IC = 60 A, RG = 10 Ω, VGE = 15 V - 35 180 43 - ns ns ns tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCE = 400 V, IC = 60 A, RG = 10 Ω, VGE = 15 V TJ = 125 °C - 46 210 85 - ns ns ns 1. Eon is the turn-on losses when a SiC diode (STPSC1206D) is used in the test circuit in Figure 17. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the same temperature (25 °C and 125 °C). Table 7. Symbol 1. Switching energy (inductive load) Parameter Test conditions Eon (1) Eoff (2) Ets Turn-on switching losses Turn-off switching losses Total switching losses VCE = 400 V, IC = 60 A, RG = 10 Ω, VGE = 15 V Eon (1) Eoff (2) Ets Turn-on switching losses Turn-off switching losses Total switching losses VCE = 400 V, IC = 60 A, RG = 10 Ω, VGE = 15 V TJ = 125 °C Typ. Max. Unit - 0.75 1.05 1.80 - mJ mJ mJ - 0.8 1.4 2.2 - mJ mJ mJ Eon is the turn-on losses when a SiC diode (STPSC1206D) is used in the test circuit in Figure 17. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the same temperature (25 °C and 125 °C). 2. Turn-off losses include also the tail of the collector current. 4/12 Min. Doc ID 019012 Rev 4 STGW60H65F Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Output characteristics (TJ = -40 °C) Figure 3. AM11847v1 IC (A) V GE = 15V 220 200 AM11848v1 IC (A) V GE = 15V 220 13V V GE = 20V 13V V GE = 20V 200 180 180 11V 160 160 140 140 120 120 100 100 80 80 60 60 40 11V 40 9V 20 0 Output characteristics (TJ = 25 °C) 0 Figure 4. 1 2 3 9V 20 VCE (V) 4 0 0 Output characteristics (TJ = 150 °C) Figure 5. AM11849v1 IC (A) V GE = 15V 220 200 1 2 3 VCE (V) 4 Transfer characteristics AM11850v1 IC (A) 220 13V V GE = 20V 200 V CE = 10V 180 180 160 160 11V 140 140 120 120 100 100 80 80 TJ = 150°C 60 60 9V 40 40 20 20 0 0 0 Figure 6. 1 2 3 VCE(SAT) vs. junction temperature AM11851v1 VCE (V) 2.8 10 11 12 VGE (V) VCE(SAT) vs. collector current AM11852v1 VCE (V) TJ = 150°C V GE = 15V TJ = 25°C 2.2 2.0 IC = 60A TJ = -40°C 1.8 1.6 IC = 30A 1.4 1.4 1.2 -50 9 2.4 1.8 1.6 8 2.6 IC = 120A 2.2 2.0 Figure 7. 7 2.8 2.6 2.4 TJ = -40°C 6 VCE (V) 4 TJ = 25°C -25 0 25 50 75 100 125 TJ (ºC) 1.2 30 Doc ID 019012 Rev 4 40 50 60 70 80 90 100 110 IC (A) 5/12 Electrical characteristics Figure 8. STGW60H65F Normalized VGE(th) vs. junction temperature AM11853v1 VGE(th) norm (V) Figure 9. Gate charge vs. gate-emitter voltage AM11854v1 VGE (V) I C = 1 mA 16 14 1.0 12 10 0.9 8 6 0.8 4 2 0.7 -50 0 -25 0 25 50 75 100 125 TJ (ºC) Figure 10. Capacitance variations (f = 1 MHz, VGE = 0) AM11855v1 C (pF) 0 150 200 Qg (nC) AM11856v1 E (μJ) V CC = 400V, V GE = 15V, RG = 10Ω 2500 Coes EOFF TJ = 25°C TJ = 125°C ---- 2000 Cres 1000 100 Figure 11. Switching losses vs. collector current Cies 10000 50 1500 EON 1000 100 500 10 0.1 1 10 VCE (V) Figure 12. Switching losses vs. gate resistance 20 40 60 80 100 IC (A) Figure 13. Switching losses vs. temperature AM11857v1 E (μJ) 0 AM11858v1 E (μJ) 3250 V CC = 400V, V GE = 15V, IC = 60 A, TJ = 125°C 2750 V CC = 400V, V GE = 15V, IC = 60 A, RG = 10 Ω 1400 1200 2250 EOFF 1000 1750 EOFF 800 1250 250 6/12 EON 600 750 EON 0 10 20 30 40 RG (Ω) 400 25 Doc ID 019012 Rev 4 50 75 100 125 TJ (°C) STGW60H65F Electrical characteristics Figure 14. Turn-OFF SOA Figure 15. Short circuit time & current vs. VGE AM11859v1 IC (A) AM11860v1 tsc (μs) ISC (A) V CC = 400V, TC = 25°C 20 100 350 17.5 tSC 15 10 250 12.5 V GE = 15 V, RG = 10Ω TC = 150 °C 1 10 7.5 150 0.1 5 0.01 0.1 1 10 VCE (V) 100 2.5 ISC 9 10 11 12 13 14 15 50 VGE (V) Figure 16. Maximum normalized Zth junction to case (IGBT) AM11861v1 K Single Pulse D=0.01 D=0.02 1E-01 D=0.05 D=0.1 D=0.2 D=0.5 1E-02 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 tP (s) Doc ID 019012 Rev 4 7/12 Test circuits 3 STGW60H65F Test circuits Figure 17. Test circuit for inductive load switching Figure 18. Gate charge test circuit AM01504v1 Figure 19. Switching waveform 90% 10% VG 90% VCE 10% Tr(Voff) Tcross 90% IC 10% Td(off) Td(on) Tr(Ion) Ton Tf Toff AM01506v1 8/12 Doc ID 019012 Rev 4 AM01505v1 STGW60H65F 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 8. TO-247 mechanical data mm Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.50 Doc ID 019012 Rev 4 9/12 Package mechanical data STGW60H65F Figure 20. TO-247 drawing 0075325_F 10/12 Doc ID 019012 Rev 4 STGW60H65F 5 Revision history Revision history Table 9. Document revision history Date Revision Changes 05-Jul-2011 1 Initial release. 12-Jan-2012 2 Document status promoted from preliminary data to datasheet. 10-Feb-2012 3 Added: Section 2.1: Electrical characteristics (curves). 31-Jul-2012 4 Updated: Figure 8 on page 6. Doc ID 019012 Rev 4 11/12 STGW60H65F Please Read Carefully: Information in this document is provided solely in connection with ST products. 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