STGW60H65FB
STGWT60H65FB
Trench gate field-stop IGBT, HB series
650 V, 60 A high speed
Datasheet - production data
Features
• Maximum junction temperature: TJ = 175 °C
TAB
• High speed switching series
• Minimized tail current
• VCE(sat) = 1.6 V (typ.) @ IC = 60 A
2
3
3
2
1
TO-247
1
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
TO-3P
Applications
• Photovoltaic inverters
Figure 1. Internal schematic diagram
C (2, TAB)
• High frequency converters
Description
These are IGBT devices developed using an
advanced proprietary trench gate and field-stop
structure. The devices are part of the new HB
series of IGBTs which represent an optimum
compromise between conduction and switching
loss to maximize the efficiency of any frequency
converter. Furthermore, a slightly positive VCE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
G (1)
E (3)
Table 1. Device summary
Order code
Marking
Package
Packing
STGW60H65FB
GW60H65FB
TO-247
Tube
STGWT60H65FB
GWT60H65FB
TO-3P
Tube
April 2015
This is information on a product in full production.
DocID025187 Rev 4
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www.st.com
16
Contents
STGW60H65FB, STGWT60H65FB
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curve) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits
4
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5
2/16
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1
TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.2
TO-3P package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
DocID025187 Rev 4
STGW60H65FB, STGWT60H65FB
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
VCES
IC
Parameter
Collector-emitter voltage (VGE = 0)
Continuous collector current at TC = 25 °C
Value
Unit
650
V
80
(1)
A
Continuous collector current at TC = 100 °C
60
ICP(2)
Pulsed collector current
240
A
VGE
Gate-emitter voltage
±20
V
PTOT
Total dissipation at TC = 25 °C
375
W
Tstg
Tj
Storage temperature
-55 to 150
Operating junction temperature
-55 to 175
°C
1. Current level is limited by bond wires.
2. Pulse width limited by maximum junction temperature.
Table 3. Thermal data
Symbol
Parameter
Value
Rthj-C
Thermal resistance junction-case
0.4
Rthj-A
Thermal resistance junction-ambient
50
Unit
°C/W
DocID025187 Rev 4
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Electrical characteristics
2
STGW60H65FB, STGWT60H65FB
Electrical characteristics
TJ = 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol
Parameter
Test conditions
Collector-emitter
V(BR)CES breakdown voltage
(VGE = 0)
IC = 2 mA
Min.
Gate threshold voltage
VCE = VGE, IC = 1 mA
ICES
Collector cut-off current
(VGE = 0)
IGES
Gate-emitter leakage
current (VCE = 0)
Unit
V
1.60
VGE = 15 V, IC = 60 A
Collector-emitter saturation
TJ = 125 °C
voltage
VGE = 15 V, IC = 60 A
TJ = 175 °C
VGE(th)
Max.
650
VGE = 15 V, IC = 60 A
VCE(sat)
Typ.
2.0
1.75
V
1.85
5
6
7
V
VCE = 650 V
25
µA
VGE = ± 20 V
±250
nA
Unit
Table 5. Dynamic characteristics
Symbol
4/16
Parameter
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer
capacitance
Qg
Total gate charge
Test conditions
VCE = 25 V, f = 1 MHz,
VGE = 0
VCC = 520 V, IC = 60 A,
VGE = 15 V, see Figure 23
Qge
Gate-emitter charge
Qgc
Gate-collector charge
DocID025187 Rev 4
Min.
Typ.
Max.
-
7792
-
-
262
-
-
158
-
-
306
-
-
126
-
-
58
-
pF
nC
STGW60H65FB, STGWT60H65FB
Electrical characteristics
Table 6. Switching characteristics (inductive load)
Symbol
td(on)
tr
(di/dt)on
td(off)
tf
Parameter
Test conditions
Min.
Typ.
Turn-on delay time
-
66
Current rise time
-
38
-
1216
A/µs
210
ns
Turn-on current slope
VCE = 400 V, IC = 60 A,
RG = 10 Ω, VGE = 15 V,
see Figure 22
Turn-off delay time
Unit
ns
-
ns
-
20
-
ns
Turn-on switching loss
-
1590
-
µJ
Turn-off switching loss
-
900
-
µJ
Ets
Total switching loss
-
2490
-
µJ
td(on)
Turn-on delay time
-
59
Current rise time
-
40
Turn-on current slope
-
1230
A/µs
242
ns
Eon(1)
Eoff(2)
tr
(di/dt)on
td(off)
tf
Eon(1)
Eoff(2)
Ets
Current fall time
Max.
VCE = 400 V, IC = 60 A,
RG = 10 Ω, VGE = 15 V,
TJ = 175 °C, see Figure 22
Turn-off delay time
Current fall time
ns
-
ns
-
147
-
ns
Turn-on switching loss
-
2860
-
µJ
Turn-off switching loss
-
1255
-
µJ
Total switching loss
-
4115
-
µJ
1. Energy loss includes reverse recovery of the external diode. The diode is the same as the co-packaged
STGW60H65DFB.
2. Turn-off loss also includes the tail of the collector current.
DocID025187 Rev 4
5/16
Electrical characteristics
2.1
STGW60H65FB, STGWT60H65FB
Electrical characteristics (curve)
Figure 2. Output characteristics (TJ = 25°C)
*,3')65
,&
$
9*6 9
Figure 3. Output characteristics (TJ = 175°C)
*,3')65
,&
$
9*6 9
9*6 9
9*6 9
9*6 9
9&(9
Figure 4. Transfer characteristics
*,3')65
,&
$
9*6 9
9*6 9
9&(9
Figure 5. Collector current vs. case temperature
GIPD270820131347FSR
IC
(A)
80
9&( 9
60
40
20
7M &
VGE = 15V, TJ = 175 °C
7M &
9*(9
Figure 6. Power dissipation vs. case
temperature
GIPD270820131401FSR
Ptot
(W)
0
0
25
50
75
100 125 150
TC(°C)
Figure 7. VCE(sat) vs. junction temperature
GIPD021020131457FSR
VCE(sat)
(V)
VGE= 15V
2.6
IC= 120A
2.4
300
2.2
2.0
200
IC= 60A
1.8
100
1.6
IC= 30A
VGE = 15V, TJ = 175 °C
1.4
0
6/16
0
25
50
75
100 125 150
TC(°C)
1.2
-50
DocID025187 Rev 4
0
50
100
150
Tj(°C)
STGW60H65FB, STGWT60H65FB
Electrical characteristics
Figure 8. VCE(sat) vs. collector current
GIPD270820131423FSR
VCE(sat)
(V)
VGE= 15V
Figure 9. Forward bias safe operating area
*,3*$/6
,&
$
9&
TJ= 25°C
2.0
V
( V
2.2
DW OL
PL
W
2.4
V
TJ= 175°C
1.8
V
1.6
7M&
7F &
9*( 9
VLQJOHSXOVH
TJ= -40°C
1.4
1.2
0
20
40
60
80
100
IC(A)
Figure 10. Normalized V(BR)CES vs. junction
temperature
GIPD280820131415FSR
V(BR)CES
PV
9&(9
Figure 11. Normalized VGE(th) vs. junction
temperature
GIPD280820131503FSR
VGE(th)
(norm)
(norm)
IC= 1mA
1.1
1.0
IC= 2mA
0.9
1.0
0.8
0.7
0.9
-50
0
50
100
150
TJ(°C)
Figure 12. Gate charge vs. gate-emitter voltage
GIPD280820131507FSR
VGE
(V)
0.6
-50
0
50
100
150
Figure 13. Switching loss vs temperature
GIPD290820131623FSR
E (μJ)
VCC= 400V, VGE= 15V
Rg= 10Ω, IC= 60A
VCC= 520V, IC= 60A
Ig= 1mA
14
TJ(°C)
EON
2600
12
10
1800
8
EOFF
6
1000
4
2
0
0
50 100 150 200 250 300 350 Qg(nC)
200
25
DocID025187 Rev 4
50
75
100
125
150
TJ(°C)
7/16
Electrical characteristics
STGW60H65FB, STGWT60H65FB
Figure 14. Switching loss vs gate resistance
GIPD280820131527FSR
E(μJ)
EON
Figure 15. Switching loss vs collector current
GIPD280820131538FSR
E (μJ)
7000
VCC= 400V, VGE= 15V
Rg= 10Ω, TJ= 175°C
6000
2900
5000
EON
4000
2100
EOFF
EOFF
3000
2000
1300
VCC = 400V, VGE = 15V
IC = 60A, TJ = 175 °C
500
6
2
10
14
1000
RG(Ω)
18
Figure 16. Switching loss vs collector emitter
voltage
E (μJ)
4300
GIPD280820131554FSR
TJ= 175°C, VGE= 15V
Rg= 10Ω, IC= 60A
EON
0
0
20
40
60
80
100
IC(A)
Figure 17. Switching times vs collector current
GIPD280820131613FSR
t
(ns)
tdoff
3300
100
tdon
2300
tr
EOFF
tf
10
1300
300
150
250
350
VCE(V)
450
Figure 18. Switching times vs gate resistance
GIPD280820131622FSR
t
(ns)
1
0
TJ= 175°C, VGE= 15V
Rg= 10Ω, VCC= 400V
20
40
60
80
100
IC(A)
Figure 19. Capacitance variations
GIPD280820131518FSR
C(pF)
TJ= 175°C, VGE= 15V
IC= 60A, VCC= 400V
f = 1 MHz
10000
Cies
tdoff
100
1000
tdon
100
tf
Coes
Cres
tr
10
8/16
4
8
12
16
20
Rg(Ω)
10
0.1
DocID025187 Rev 4
1
10
100
VCE(V)
STGW60H65FB, STGWT60H65FB
Electrical characteristics
Figure 20. Collector current vs. switching
frequency
GIPD080120151105FSR
Ic (A)
Figure 21. Thermal impedance
ZthTO2T_A
K
d=0.5
100
0.2
Tc=80°C
0.1
80
Tc=100 °C
10
-1
0.05
60
40
20
1
0.02
0.01
rectangular current shape,
(duty cycle=0.5, VCC = 400V, RG=10 Ω,
VGE = 0/15 V, TJ =175°C)
10
Single pulse
f (kHz)
10 -2
10 -5
DocID025187 Rev 4
10 -4
10 -3
10 -2
10 -1
tp (s)
9/16
Test circuits
3
STGW60H65FB, STGWT60H65FB
Test circuits
Figure 22. Test circuit for inductive load
switching
Figure 23. Gate charge test circuit
k
k
k
k
k
k
AM01504v1
Figure 24. Switching waveform
90%
10%
VG
90%
VCE
10%
Tr(Voff)
Tcross
90%
IC
10%
Td(off)
Td(on)
Tr(Ion)
Ton
Tf
Toff
AM01506v1
10/16
DocID025187 Rev 4
AM01505v1
STGW60H65FB, STGWT60H65FB
4
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
4.1
TO-247 package information
Figure 25. TO-247 package outline
0075325_H
DocID025187 Rev 4
11/16
Package information
STGW60H65FB, STGWT60H65FB
Table 7. TO-247 mechanical data
mm.
Dim.
Min.
Typ.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
5.45
L2
12/16
Max.
5.60
18.50
∅P
3.55
3.65
∅R
4.50
5.50
S
5.30
5.50
DocID025187 Rev 4
5.70
STGW60H65FB, STGWT60H65FB
4.2
Package information
TO-3P package information
Figure 26. TO-3P package outline
8045950_B
DocID025187 Rev 4
13/16
Package information
STGW60H65FB, STGWT60H65FB
Table 8. TO-3P mechanical data
mm
Dim.
14/16
Min.
Typ.
Max.
A
4.60
4.80
5
A1
1.45
1.50
1.65
A2
1.20
1.40
1.60
b
0.80
1.00
1.20
b1
1.80
2.00
2.20
b2
2.80
3.00
3.20
c
0.55
0.60
0.75
D
19.70
19.90
20.10
D1
13.70
13.90
14.10
E
15.40
15.60
15.80
E1
13.40
13.60
13.80
E2
9.40
9.60
9.90
e
5.15
5.45
5.75
L
19.80
20
20.20
L1
3.30
3.50
3.70
L2
18.20
18.40
18.60
øP
3.30
3.40
3.50
øP1
3.10
3.20
3.30
Q
4.80
5
5.20
Q1
3.60
3.80
4
DocID025187 Rev 4
STGW60H65FB, STGWT60H65FB
5
Revision history
Revision history
Table 9. Document revision history
Date
Revision
30-Aug-2013
1
Initial release.
28-Feb-2014
2
Updated title and features in cover page.
3
Updated features in cover page, Table 2: Absolute maximum ratings,
Table 4: Static characteristics and Table 6: Switching characteristics
(inductive load).
Updated Figure 5: Collector current vs. case temperature, Figure 6:
Power dissipation vs. case temperature, Figure 8: VCE(sat) vs.
collector current, Figure 17: Switching times vs collector current,
Figure 18: Switching times vs gate resistance and Figure 19:
Capacitance variations.
Added Figure 20: Collector current vs. switching frequency.
Updated Section 4: Package information.
Minor text changes.
4
Text edits throughout document
Updated Table 2: Absolute maximum ratings
Updated Table 4: Static characteristics
Updated Table 6: Switching characteristics (inductive load)
Updated Section 2.1: Electrical characteristics (curve).
09-Jan-2015
01-Apr-2015
Changes
DocID025187 Rev 4
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STGW60H65FB, STGWT60H65FB
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