STGW80H65DFB-4

STGW80H65DFB-4 Datasheet Trench gate field-stop 650 V, 80 A high speed HB series IGBT Features 1 2 4 3 TO247-4 C(1, TAB) • VCE(sat) = 1.6 V (typ.) @ IC = 80 A • Maximum junction temperature: TJ = 175 °C • • • • • • • High speed switching series Minimized tail current Tight parameter distribution Safe paralleling Low thermal resistance Very fast soft recovery antiparallel diode Excellent switching performance thanks to the extra driving kelvin pin Applications G(4) K(3) • • Photovoltaic inverters High frequency converters E(2) NG4K3E2C1_TAB Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. A faster switching event can be achieved by the Kelvin pin, which separates power path from driving signal. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGW80H65DFB-4 Product summary Order code STGW80H65DFB-4 Marking G80H65DFB Package TO247-4 Packing Tube DS11137 - Rev 5 - December 2021 For further information contact your local STMicroelectronics sales office. www.st.com STGW80H65DFB-4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol VCES IC ICP (2) VGE Parameter Collector-emitter voltage (VGE = 0 V) Value Unit 650 V Continuous collector current at TC = 25 °C 120 (1) Continuous collector current at TC = 100 °C 80 Pulsed collector current (tp ≤ 1 μs, TJ < 175 °C) 300 A Gate-emitter voltage ±20 V Transient gate-emitter voltage ±30 V A Continuous forward current at TC = 25 °C 120 (1) Continuous forward current at TC = 100 °C 80 IFP (2) Pulsed forward current (tp ≤ 1 μs, TJ < 175 °C) 300 A PTOT Total power dissipation at TC = 25 °C 470 W TSTG Storage temperature range - 55 to 150 Operating junction temperature range - 55 to 175 IF TJ A °C 1. Current level is limited by bond wires 2. Defined by design, not subject to production test. Table 2. Thermal data Symbol DS11137 - Rev 5 Parameter Value RthJC Thermal resistance junction-case IGBT 0.32 RthJC Thermal resistance junction-case diode 0.66 RthJA Thermal resistance junction-ambient Unit °C/W 50 page 2/15 STGW80H65DFB-4 Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 3. Static characteristics Symbol Parameter Test conditions V(BR)CES Collector-emitter breakdown voltage VCE(sat) Collector-emitter saturation voltage VF Forward on-voltage VGE = 0 V, IC = 2 mA Min. Typ. 650 1.6 VGE = 15 V, IC = 80 A, TJ = 125 °C 1.8 VGE = 15 V, IC = 80 A, TJ = 175 °C 1.9 IF = 80 A 2.15 IF = 80 A, TJ = 125 °C 1.8 IF = 80 A, TJ = 175 °C 1.7 Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current IGES Gate-emitter leakage current 5 Unit V VGE = 15 V, IC = 80 A VGE(th) Max. 6 2.0 V 2.8 V 7 V VGE = 0 V, VCE = 650 V 100 µA VCE = 0 V, VGE = ±20 V ±250 nA Unit Table 4. Dynamic characteristics Symbol DS11137 - Rev 5 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge Test conditions VCE= 25 V, f = 1 MHz, VGE = 0 V VCC = 520 V, IC = 80 A, VGE = 0 to 15 V (see Figure 29. Gate charge test circuit) Min. Typ. Max. - 10524 - - 385 - - 215 - - 414 - - 78 - - 170 - pF nC page 3/15 STGW80H65DFB-4 Electrical characteristics Table 5. IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Parameter Typ. Max. Turn-on delay time 75 - Current rise time 35 - 1750 - 336 - 23 - 1 - Turn-on current slope Turn-off-delay time Current fall time Test conditions Min. VCE = 400 V, IC = 80 A, VGE = 15 V, RG = 10 Ω (see Figure 28. Test circuit for inductive load switching) Eon (1) Turn-on switching energy Eoff (2) Turn-off switching energy 1.7 - Total switching energy 2.7 - Turn-on delay time 66 - Current rise time 38 - 1670 - 403 - 45 - 1.5 - Ets td(on) tr (di/dt)on td(off) tf Turn-on current slope Turn-off-delay time Current fall time VCE = 400 V, IC = 80 A, VGE = 15 V, RG = 10 Ω, TJ = 175 °C (see Figure 28. Test circuit for inductive load switching) Unit ns A/µs ns mJ ns A/µs ns Eon (1) Turn-on switching energy Eoff (2) Turn-off switching energy 2.47 - Total switching energy 3.97 - Min. Typ. Max. Unit - 112 - ns - 955 - nC - 27.2 - A - 1515 - A/µs Ets mJ 1. Including the reverse recovery of the diode. 2. Including the tail of the collector current. Table 6. Diode switching characteristics (inductive load) Symbol DS11137 - Rev 5 Parameter trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current Test conditions IF = 80 A, VR = 400 V, VGE = 15 V di/dt = 1000 A/µs (see Figure 28. Test circuit for inductive load switching) dIrr/dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy - 170 - µJ trr Reverse recovery time - 164 - ns Qrr Reverse recovery charge - 3838 - nC Irrm Reverse recovery current - 52 - A dIrr/dt Peak rate of fall of reverse recovery current during tb - 785 - A/µs Err Reverse recovery energy - 635 - µJ IF = 80 A, VR = 400 V, VGE = 15 V, TJ = 175 °C di/dt = 1000 A/µs (see Figure 28. Test circuit for inductive load switching) page 4/15 STGW80H65DFB-4 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Power dissipation vs. case temperature PTOT (W) GIPD160920130948FSR VGE = 15 V, TJ = 175 °C Figure 2. Collector current vs. case temperature GIPD160920130941FSR IC (A) VGE =15 V,TJ =175 °C 120 400 100 300 80 60 200 40 100 20 0 0 0 50 100 150 TC(°C) Figure 3. Output characteristics (TJ = 25 °C) IC (A) 160 V GE = 15 V 140 IGBT060715EWFRWOC25 13 V 11 V 50 25 75 100 125 150 IC (A) 160 IGBT060715EWFRWOC175 V GE = 15 V 13 V 11 V 120 100 100 80 80 60 60 40 40 20 7V 20 2 3 4 7V V CE (V) Figure 5. VCE(sat) vs. junction temperature V CE(sat) (V) IGBT060715EWFRWVCET V GE = 15 V 0 0 1 I C = 160 A 2 3 V CE (V) V CE(sat) (V) IGBT060715EWFRWVCEC V GE = 15 V T J = 175 °C T J = 25 °C 2.0 2.2 T J = -40 °C 1.6 I C = 80 A 1.8 4 Figure 6. VCE(sat) vs. collector current 2.4 2.6 9V 140 9V 1 TC(°C) Figure 4. Output characteristics (TJ = 175 °C) 120 0 0 0 1.2 0.8 1.4 1.0 -50 DS11137 - Rev 5 I C = 40 A 0 50 100 0.4 150 T J (°C) 0.0 0 40 80 120 160 I C (A) page 5/15 STGW80H65DFB-4 Electrical characteristics (curves) Figure 7. Collector current vs. switching frequency IC (A) 160 IGBT060715EWFRWCCS Figure 8. Forward bias safe operating area IC (A) IGBT171120161002FSOA 140 tp = 1µs 120 10 2 100 TC= 100 °C TC= 80 °C tp = 10µs 80 60 tp = 100µs 10 1 40 20 Rectangular current shape (duty cycle = 0.5, VCC= 400 V, R G= 10 Ω, VGE= 0/15 V, T J= 175 °C) 0 0 10 1 2 10 f (kHz) 10 Figure 9. Transfer characteristics IC (A) IGBT060715EWFRWTCH V CE = 4 V 200 10 0 single pulse, TC = 25°C TJ < 175 °C, VGE = 15 V 10 0 10 1 Figure 10. Diode VF vs. forward current VF (V) IGBT060715EWFRWDVF 2.6 2.2 160 T J = -40 °C 1.8 T J = 25 °C 120 1.4 80 T J = 175 °C 0.6 T J = 25 °C 6 7 8 9 V GE (V) Figure 11. Normalized VGE(th) vs. junction temperature VGE(th) GIPD160920131151FSR (norm) 1.1 T J = 175 °C 1.0 40 0 5 VCE (V) 10 2 IC = 1mA 0.2 0 20 40 60 80 100 I F (A) Figure 12. Normalized V(BR)CES vs. junction temperature VBR(CES) (norm) GIPD160920131144FSR IC = 2 mA 1.1 1.0 0.9 1.0 0.8 0.7 0.6 -50 DS11137 - Rev 5 0 50 100 150 TJ(°C) 0.9 -50 0 50 100 150 TJ(°C) page 6/15 STGW80H65DFB-4 Electrical characteristics (curves) Figure 13. Capacitance variations C (pF) Figure 14. Gate charge vs. gate-emitter voltage VGE (V) 16 GIPD160920131200FSR GIPD160920131156FSR IC = 80 A VCC = 520 V CIES 10000 12 1000 8 COES CRES 100 10 0.1 1 10 100 VCE(V) Figure 15. Switching energy vs. collector current E (mJ) IGBT060715EWFRWSLC 6 EOFF 4 0 0 100 200 300 400 Qg(nC) Figure 16. Switching energy vs. gate resistance IGBT060715EWFRWSLG E (mJ) 4 5 3 4 EOFF 3 2 EON 2 EON 1 1 0 0 40 80 120 160 IC (A) Figure 17. Switching energy vs. temperature IGBT060715EWFRWSLT E (mJ) VCC = 400 V, IC = 80 A, RG = 10 Ω, VGE = 15 V 2.5 2.0 0 0 5 10 15 20 RG (Ω) Figure 18. Switching energy vs. collector emitter voltage IGBT060715EWFRWSLV E (mJ) IC = 80 A, RG = 10 Ω, VGE = 15 V, TJ = 175 °C 3.0 EOFF EOFF 2.0 1.5 EON 0.5 0 DS11137 - Rev 5 EON 1.0 1.0 50 100 150 TJ (°C) 0 150 250 350 450 VCE (V) page 7/15 STGW80H65DFB-4 Electrical characteristics (curves) Figure 19. Switching times vs. collector current t (ns) 102 IGBT060715EWFRWSTC td(off) Figure 20. Switching times vs. gate resistance t (ns) IGBT060715EWFRWSTR td(off) td(on) tf 102 101 td(on) tr tf tr VCC = 400 V, VGE = 15 V, RG = 10 Ω, TJ = 175 °C 100 0 40 80 120 160 VCC = 400 V, VGE = 15 V, IC = 80 A, TJ = 175 °C IC (A) Figure 21. Reverse recovery current vs. diode current slope IGBT060715EWFRWRRC Irrm (A) VCC = 400 V, VGE = 15 V, IF = 80 A, TJ = 175 °C 5 10 15 20 RG (Ω) Figure 22. Reverse recovery time vs. diode current slope IGBT060715EWFRWRRT trr (ns) VCC = 400 V, VGE = 15 V, IF = 80 A, TJ = 175 °C 180 100 160 90 140 80 120 70 100 60 80 50 40 500 101 0 1000 1500 2000 2500 3000 di/dt (A/µs) Figure 23. Reverse recovery charge vs. diode current slope IGBT060715EWFRWRRQ Qrr (µC) VCC = 400 V, VGE = 15 V, IF = 80 A, TJ = 175 °C 60 500 1000 1500 2000 2500 3000 di/dt (A/µs) Figure 24. Reverse recovery energy vs. diode current slope IGBT060715EWFRWRRE Err (µJ) VCC= 400 V, VGE= 15 V, IF= 80 A, TJ= 175 °C 700 6.0 600 5.5 500 5.0 400 300 4.5 200 4.0 3.5 500 DS11137 - Rev 5 100 1000 1500 2000 2500 3000 di/dt (A/µs) 0 500 1000 1500 2000 2500 3000 di/dt (A/µs) page 8/15 STGW80H65DFB-4 Electrical characteristics (curves) Figure 25. Thermal impedance for IGBT ZthTO2T_A K δ = 0.5 δ = 0.2 δ = 0.05 δ = 0.1 δ = 0.02 10-1 δ = 0.01 Single pulse Zth = k*RthJC δ = tp /t tp 10-2 10-5 t 10-4 10-3 10-2 10-1 tp (s) Figure 26. Thermal impedance for diode DS11137 - Rev 5 page 9/15 STGW80H65DFB-4 Test circuits 3 Test circuits Figure 27. Test circuit for inductive load switching A A Figure 28. Gate charge test circuit C L=100 μH G VCC 12 V E 47 kΩ B B 1 kΩ 100 nF 3.3 μF C G 1000 μF VCC Vi ≤ V D.U.T GMAX 2200 µF RG K E D.U.T. 100 Ω 2.7 kΩ VG 47 kΩ PW 1 kΩ GIPG030320161351SA GND1 (signal ground) IG=CONST GND2 (power ground) GND1 (signal ground) GND2 (power ground) HB650_4_leads Figure 29. Switching waveform Figure 30. Diode reverse recovery waveform 90% 10% VG 90% VCE 10% tr(Voff) 10 tcross 90% IC td(on) ton td(off) tr(Ion) 10% tf toff AM01506v1 DS11137 - Rev 5 GADG140820170937SA page 10/15 STGW80H65DFB-4 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO247-4 package information Figure 31. TO247-4 package outline 8405626_Rev_3 DS11137 - Rev 5 page 11/15 STGW80H65DFB-4 TO247-4 package information Table 7. TO247-4 mechanical data Dim. mm Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 b1 1.15 b2 0 0.20 c 0.59 0.66 c1 0.58 0.60 0.62 D 20.90 21.00 21.10 D1 16.25 16.55 16.85 D2 1.05 1.20 1.35 D3 24.97 25.12 25.27 E 15.70 15.80 15.90 E1 13.10 13.30 13.50 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 2.44 2.54 2.64 e1 4.98 5.08 5.18 L 19.80 19.92 20.10 P 3.50 3.60 3.70 1.29 1.20 P1 7.40 P2 2.40 Q 5.60 S 2.50 2.60 6.00 6.15 T 9.80 10.20 U 6.00 6.40 aaa DS11137 - Rev 5 1.25 0.04 0.10 page 12/15 STGW80H65DFB-4 Revision history Table 8. Document revision history Date Revision 05-Aug-2015 1 Changes First release. Updated features in cover page. 17-Nov-2016 2 Updated Table 2: "Absolute maximum ratings" and Figure 9: "Forward bias safe operating area". Minor text changes. 03-Mar-2017 3 Updated the title in cover page, Table 2: "Absolute maximum ratings",Table 4: "Static characteristics" and Table 6: "IGBT switching characteristics (inductive load)". Minor text changes. DS11137 - Rev 5 03-Jul-2019 4 03-Dec-2021 5 Updated Table 1. Absolute maximum ratings. Minor text changes. Updated Table 4. Dynamic characteristics. Updated Section 4.1 TO247-4 package information. page 13/15 STGW80H65DFB-4 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.1 TO247-4 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 DS11137 - Rev 5 page 14/15 STGW80H65DFB-4 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2021 STMicroelectronics – All rights reserved DS11137 - Rev 5 page 15/15