STGW80H65FB, STGWA80H65FB,
STGWT80H65FB
Trench gate field-stop IGBT, HB series
650 V, 80 A high speed
Datasheet - production data
Features
• Maximum junction temperature: TJ = 175 °C
TAB
• High speed switching series
• Minimized tail current
• VCE(sat) = 1.6 V (typ.) @ IC = 80 A
2
3
3
2
1
1
• Safe paralleling
TO-3P
TO-247
TO-247 long leads
• Tight parameter distribution
• Low thermal resistance
Applications
Figure 1. Internal schematic diagram
• Photovoltaic inverters
• High frequency converters
C (2 or TAB)
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. The device is part of the new “HB”
series of IGBTs, which represent an optimum
compromise between conduction and switching
losses to maximize the efficiency of any
frequency converter. Furthermore, a slightly
positive VCE(sat) temperature coefficient and very
tight parameter distribution result in safer
paralleling operation.
G (1)
E (3)
Table 1. Device summary
Order code
Marking
Package
Packaging
STGW80H65FB
GW80H65FB
TO-247
Tube
STGWA80H65FB
GWA80H65FB
TO-247 long leads
Tube
STGWT80H65FB
GWT80H65FB
TO-3P
Tube
June 2014
This is information on a product in full production.
DocID026401 Rev 1
1/18
www.st.com
18
Contents
STGW80H65FB, STGWA80H65FB, STGWT80H65FB
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5
2/18
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1
TO-247, STGW80H65FB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.2
TO-247 long leads, STGWA80H65FB . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.3
TO-3P, STGWT80H65FB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
DocID026401 Rev 1
STGW80H65FB, STGWA80H65FB, STGWT80H65FB
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
VCES
Parameter
Collector-emitter voltage (VGE = 0)
Value
Unit
650
V
(1)
IC
Continuous collector current at TC = 25 °C
IC
Continuous collector current at TC = 100 °C
80
A
ICP(2)
Pulsed collector current
240
A
VGE
Gate-emitter voltage
±20
V
PTOT
Total dissipation at TC = 25 °C
469
W
TSTG
Storage temperature range
- 55 to 150
°C
Operating junction temperature
- 55 to 175
°C
Value
Unit
0.32
°C/W
50
°C/W
TJ
120
A
1. Current level is limited by bond wires.
2. Pulse width limited by maximum junction temperature.
Table 3. Thermal data
Symbol
Parameter
RthJC
Thermal resistance junction-case
RthJA
Thermal resistance junction-ambient
DocID026401 Rev 1
3/18
Electrical characteristics
2
STGW80H65FB, STGWA80H65FB, STGWT80H65FB
Electrical characteristics
TJ = 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol
Parameter
Test conditions
Collector-emitter
V(BR)CES breakdown voltage
(VGE = 0)
IC = 2 mA
Min.
Gate threshold voltage
VCE = VGE, IC = 1 mA
ICES
Collector cut-off current
(VGE = 0)
IGES
Gate-emitter leakage
current (VCE = 0)
Unit
V
1.6
VGE = 15 V, IC = 80 A
Collector-emitter saturation
TJ = 125 °C
voltage
VGE = 15 V, IC = 80 A
TJ = 175 °C
VGE(th)
Max.
650
VGE = 15 V, IC = 80 A
VCE(sat)
Typ.
2
1.8
V
1.9
5
6
7
V
VCE = 650 V
100
µA
VGE = ± 20 V
250
nA
Table 5. Dynamic characteristics
Symbol
4/18
Parameter
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer
capacitance
Qg
Total gate charge
Test conditions
VCE = 25 V, f = 1 MHz,
VGE = 0
VCC = 520 V, IC = 80 A,
VGE = 15 V, see Figure 23
Qge
Gate-emitter charge
Qgc
Gate-collector charge
DocID026401 Rev 1
Min.
Typ.
Max.
Unit
-
10524
-
pF
-
385
-
pF
-
215
-
pF
-
414
-
nC
-
78
-
nC
-
170
-
nC
STGW80H65FB, STGWA80H65FB, STGWT80H65FB
Electrical characteristics
Table 6. IGBT switching characteristics (inductive load)
Symbol
td(on)
tr
(di/dt)on
td(off)
tf
Test conditions
Min.
Typ.
Max.
Unit
Turn-on delay time
-
84
-
ns
Current rise time
-
52
-
ns
-
1270
-
A/µs
-
280
-
ns
-
31
-
ns
Turn-on current slope
VCE = 400 V, IC = 80 A,
RG = 10 Ω, VGE = 15 V,
see Figure 22
Turn-off delay time
Current fall time
Eon(1)
Turn-on switching losses
-
2.1
-
mJ
Eoff(2)
Turn-off switching losses
-
1.5
-
mJ
Total switching losses
-
3.6
-
mJ
Turn-on delay time
-
77
-
ns
Current rise time
-
51
-
ns
Turn-on current slope
-
1270
-
A/µs
-
328
-
ns
-
30
-
ns
Ets
td(on)
tr
(di/dt)on
td(off)
tf
VCE = 400 V, IC = 80 A,
RG = 10 Ω, VGE = 15 V,
TJ = 175 °C, see Figure 22
Turn-off delay time
Current fall time
Eon(1)
Turn-on switching losses
-
4.4
-
mJ
Eoff(2)
Turn-off switching losses
-
2.1
-
mJ
Total switching losses
-
6.5
-
mJ
Ets
1.
Parameter
Energy losses include reverse recovery of the external diode. The diode is the same of the co-packed
STGW80H65DFB
2. Turn-off losses include also the tail of the collector current.
DocID026401 Rev 1
5/18
Electrical characteristics
2.1
STGW80H65FB, STGWA80H65FB, STGWT80H65FB
Electrical characteristics (curves)
Figure 2. Output characteristics (TJ = 25°C)
GIPD130920131606FSR
IC
(A)
VGE=15V
Figure 3. Output characteristics (TJ = 175°C)
GIPD160920130919FSR
IC
(A)
VGE=15V
11V
140
11V
140
9V
9V
120
120
100
100
80
80
60
60
40
40
20
20
7V
0
2
1
0
4
3
Figure 4. Transfer characteristics
GIPD160920130924FSR
IC
(A)
0
VCE(V)
VCE=10V
2
1
0
3
4
VCE(V)
Figure 5. Collector current vs. case temperature
GIPD160920130941FSR
IC
(A)
VGE = 15 V, TJ = 175 °C
120
140
120
100
25°C
100
80
TJ=175°C
-40°C
80
60
60
40
40
20
20
0
8
7
6
9
Figure 6. Power dissipation vs. case
temperature
GIPD160920130948FSR
Ptot
(W)
450
0
11 VGE(V)
10
VGE = 15 V, TJ = 175 °C
400
0
25
50
75 100 125 150
Figure 7. VCE(sat) vs. junction temperature
VCE(sat)
(V)
2.6
GIPD160920130952FSR
VGE= 15V
2.4
IC= 160A
350
2.2
300
2
250
200
1.8
IC= 80A
150
1.6
100
1.4
50
0
0
6/18
TJ(°C)
25
50
75 100 125 150
TJ(°C)
1.2
-50
DocID026401 Rev 1
IC= 40A
0
50
100
150 TJ(°C)
STGW80H65FB, STGWA80H65FB, STGWT80H65FB
Figure 8. VCE(sat) vs. collector current
Figure 9. Forward bias safe operating area
GIPD160920131029FSR
VCE(sat)
(V)
2.6
Electrical characteristics
GIPD160920131115FSR
IC
(A)
VGE= 15V
2.4
100
TJ= 175°C
2.2
TJ= 25°C
10μs
2
1.8
100μs
10
1.6
1.4
1
1.2
1ms
Single pulse
Tc= 25°C, TJ ≤ 175°C
VGE= 15V
TJ= -40°C
1
0.8
0
20
40
60
80 100 120 140
IC(A)
Figure 10. Capacitance variations
1
10
VCE(V)
100
Figure 11. Normalized V(BR)CES vs. junction
temperature
GIPD160920131200FSR
C
(pF)
0.1
GIPD160920131144FSR
V(BR)CES
(norm)
1.1
10000
Cies
1000
1
IC= 2mA
Coes
Cres
100
10
0.1
1
100
10
Figure 12. Normalized VGE(th) vs. junction
temperature
GIPD160920131151FSR
VGE
(norm)
1.1
0.9
-50
VCE(V)
IC= 1mA
0
50
100
150
TJ(°C)
Figure 13. Gate charge vs. gate-emitter voltage
GIPD160920131156FSR
VGE
(V)
16
14
1
IC= 80A
VCC= 520V
12
10
0.9
8
0.8
6
4
0.7
2
0.6
-50
0
50
100
150
TJ(°C)
DocID026401 Rev 1
0
0
100
200
300
400
Qg(nC)
7/18
Electrical characteristics
STGW80H65FB, STGWA80H65FB, STGWT80H65FB
Figure 14. Switching loss vs temperature
E
(μJ)
4500
GIPD160920131504FSR
VCC= 400V, VGE = 15V
IC= 80A, Rg= 10Ω
EON
4000
Figure 15. Switching loss vs gate resistance
GIPD160920131208FSR
E
(μJ)
VCC= 400V, VGE = 15V
IC= 80A, TJ= 175°C
5000
3500
4200
3000
3400
EON
2500
EOFF
2600
2000
1000
0
25
50
75 100 125 150 175
TJ(°C)
Figure 16. Switching loss vs collector current
E
(μJ)
EOFF
1800
1500
GIPD160920131436FSR
VCC= 400V, VGE = 15V
RG= 10Ω, TJ= 175°C
1000
2
6
10
14
RG(Ω)
18
Figure 17. Switching loss vs collector emitter
voltage
GIPD160920131524FSR
E
(μJ)
6000
TJ= 175°C, VGE = 15V
IC= 80A, Rg= 10Ω
EON
9000
5000
8000
7000
EON
6000
4000
5000
4000
3000
3000
EOFF
2000
1000
0
0
20
40
EOFF
2000
60 80 100 120 140 IC(A)
1000
150 200 250 300 350 400 450
VCE(V)
Figure 18. Switching times vs. collector current Figure 19. Switching times vs. gate resistance
GIPD160920131533FSR
t
(ns)
GIPD160920131539FSR
t
(ns)
tdoff
100
tdon
tdon
tr
10
1
20
8/18
tdoff
TJ= 175°C, VGE = 15V
VCC= 400V, IC= 80A
100
tr
tf
tf
TJ= 175°C, VGE = 15V
VCC= 400V, Rg= 10Ω
40
60
80
100 120 140 IC(A)
DocID026401 Rev 1
10
4
8
12
16
20
Rg(Ω)
STGW80H65FB, STGWA80H65FB, STGWT80H65FB
Electrical characteristics
Figure 20. Collector current vs. switching
frequency
GIPD260520141426FSR
Ic [A]
160
140
120
Tc=80°C
Tc=100 °C
100
80
60
40
1
rectangular current shape,
(duty cycle=0.5, VCC = 400V, RG=10 Ω,
VGE = 0/15 V, TJ =175°C)
f [kHz]
10
Figure 21. Thermal impedance
ZthTO2T_A
K
d=0.5
0.2
0.1
10-1
0.05
0.02
0.01
Single pulse
10-2
10-5
10-4
10-3
DocID026401 Rev 1
10-2
10-1
tp (s)
9/18
Test circuits
3
STGW80H65FB, STGWA80H65FB, STGWT80H65FB
Test circuits
Figure 22. Test circuit for inductive load
switching
Figure 23. Gate charge test circuit
k
k
k
k
k
k
AM01504v1
Figure 24. Switching waveform
90%
10%
VG
90%
VCE
10%
Tr(Voff)
Tcross
90%
IC
10%
Td(off)
Td(on)
Tr(Ion)
Ton
Tf
Toff
AM01506v1
10/18
DocID026401 Rev 1
AM01505v1
STGW80H65FB, STGWA80H65FB, STGWT80H65FB
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
4.1
TO-247, STGW80H65FB
Figure 25. TO-247 drawing
0075325_G
DocID026401 Rev 1
11/18
Package mechanical data
STGW80H65FB, STGWA80H65FB, STGWT80H65FB
Table 7. TO-247 mechanical data
mm.
Dim.
Min.
Typ.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
5.45
L2
12/18
Max.
5.60
18.50
∅P
3.55
3.65
∅R
4.50
5.50
S
5.30
5.50
DocID026401 Rev 1
5.70
STGW80H65FB, STGWA80H65FB, STGWT80H65FB
4.2
Package mechanical data
TO-247 long leads, STGWA80H65FB
Figure 26. TO-247 long leads drawing
8463846_A_F
DocID026401 Rev 1
13/18
Package mechanical data
STGW80H65FB, STGWA80H65FB, STGWT80H65FB
Table 8. TO-247 long leads mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.90
5.00
5.10
A1
2.31
2.41
2.51
A2
1.90
2.00
2.10
b
1.16
1.26
b2
3.25
b3
2.25
c
0.59
0.66
D
20.90
21.00
21.10
E
15.70
15.80
15.90
E2
4.90
5.00
5.10
E3
2.40
2.50
2.60
e
5.34
5.44
5.54
L
19.80
19.92
20.10
L1
14/18
4.30
P
3.50
Q
5.60
S
6.05
3.60
3.70
6.00
6.15
DocID026401 Rev 1
6.25
STGW80H65FB, STGWA80H65FB, STGWT80H65FB
4.3
Package mechanical data
TO-3P, STGWT80H65FB
Figure 27. TO-3P drawing
8045950_B
DocID026401 Rev 1
15/18
Package mechanical data
STGW80H65FB, STGWA80H65FB, STGWT80H65FB
Table 9. TO-3P mechanical data
mm
Dim.
16/18
Min.
Typ.
Max.
A
4.60
4.80
5
A1
1.45
1.50
1.65
A2
1.20
1.40
1.60
b
0.80
1.00
1.20
b1
1.80
2.00
2.20
b2
2.80
3.00
3.20
c
0.55
0.60
0.75
D
19.70
19.90
20.10
D1
13.70
13.90
14.10
E
15.40
15.60
15.80
E1
13.40
13.60
13.80
E2
9.40
9.60
9.90
e
5.15
5.45
5.75
L
19.80
20
20.20
L1
3.30
3.50
3.70
L2
18.20
18.40
18.60
øP
3.30
3.40
3.50
øP1
3.10
3.20
3.30
Q
4.80
5
5.20
Q1
3.60
3.80
4
DocID026401 Rev 1
STGW80H65FB, STGWA80H65FB, STGWT80H65FB
5
Revision history
Revision history
Table 10. Document revision history
Date
Revision
13-Jun-2014
1
Changes
Initial release.
DocID026401 Rev 1
17/18
STGW80H65FB, STGWA80H65FB, STGWT80H65FB
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