STGW80V60DF
STGWT80V60DF
Trench gate field-stop IGBT, V series
600 V, 80 A very high speed
Datasheet - production data
Features
• Maximum junction temperature: TJ = 175 °C
TAB
• Tail-less switching off
• VCE(sat) = 1.85 V (typ.) @ IC = 80 A
• Tight parameters distribution
2
3
3
1
2
1
• Safe paralleling
• Low thermal resistance
• Very fast soft recovery antiparallel diode
TO-247
TO-3P
Applications
Figure 1. Internal schematic diagram
C (2 or TAB)
• Photovoltaic inverters
• Uninterruptible power supply
• Welding
• Power factor correction
• Very high frequency converters
Description
G (1)
This device is an IGBT developed using an
advanced proprietary trench gate field stop
structure. The device is part of the V series of
IGBTs, which represent an optimum compromise
between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive VCE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
E (3)
Table 1. Device summary
Order code
Marking
Package
Packaging
STGW80V60DF
GW80V60DF
TO-247
Tube
STGWT80V60DF
GWT80V60DF
TO-3P
Tube
January 2014
This is information on a product in full production.
DocID024362 Rev 2
1/18
www.st.com
18
Contents
STGW80V60DF, STGWT80V60DF
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/18
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
DocID024362 Rev 2
STGW80V60DF, STGWT80V60DF
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
VCES
Parameter
Collector-emitter voltage (VGE = 0)
Value
Unit
600
V
(1)
IC
Continuous collector current at TC = 25 °C
IC
Continuous collector current at TC = 100 °C
80
A
ICP(2)
Pulsed collector current
240
A
VGE
Gate-emitter voltage
±20
V
120
(1)
A
IF
Continuous forward current at TC = 25 °C
IF
Continuous forward current at TC = 100 °C
80
A
IFP(2)
Pulsed forward current
360
A
PTOT
Total dissipation at TC = 25 °C
469
W
TSTG
Storage temperature range
- 55 to 150
°C
Operating junction temperature
- 55 to 175
°C
Value
Unit
TJ
120
A
1. Current level is limited by bond wires
2. Pulse width limited by maximum junction temperature
Table 3. Thermal data
Symbol
Parameter
RthJC
Thermal resistance junction-case IGBT
0.32
°C/W
RthJC
Thermal resistance junction-case diode
0.66
°C/W
RthJA
Thermal resistance junction-ambient
50
°C/W
DocID024362 Rev 2
3/18
Electrical characteristics
2
STGW80V60DF, STGWT80V60DF
Electrical characteristics
TJ = 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol
Parameter
Test conditions
Collector-emitter
V(BR)CES breakdown voltage
(VGE = 0)
IC = 2 mA
Min.
VF
4/18
Unit
V
1.85
VGE = 15 V, IC = 80 A
Collector-emitter saturation
TJ = 125 °C
voltage
VGE = 15 V, IC = 80 A
TJ = 175 °C
Forward on-voltage
Max.
600
VGE = 15 V, IC = 80 A
VCE(sat)
Typ.
2.3
2.15
V
2.4
IF = 80 A
1.9
IF = 80 A TJ = 125 °C
1.6
V
IF = 80 A TJ = 175 °C
1.5
V
VGE(th)
Gate threshold voltage
VCE = VGE, IC = 1 mA
ICES
Collector cut-off current
(VGE = 0)
IGES
Gate-emitter leakage
current (VCE = 0)
6
V
7
V
VCE = 600 V
100
μA
VGE = ± 20 V
250
nA
DocID024362 Rev 2
5
2.3
STGW80V60DF, STGWT80V60DF
Electrical characteristics
Table 5. Dynamic characteristics
Symbol
Parameter
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer
capacitance
Qg
Total gate charge
Test conditions
VCE = 25 V, f = 1 MHz,
VGE = 0
VCC = 480 V, IC = 80 A,
VGE = 15 V, see Figure 29
Qge
Gate-emitter charge
Qgc
Gate-collector charge
Min.
Typ.
Max.
Unit
-
10800
-
nF
-
390
-
pF
-
220
-
pF
-
448
-
nC
-
76
-
nC
-
184
-
nC
Table 6. IGBT switching characteristics (inductive load)
Symbol
td(on)
tr
(di/dt)on
td(off)
tf
Test conditions
Min.
Typ.
Max.
Unit
Turn-on delay time
-
60
-
ns
Current rise time
-
30
-
ns
-
2200
-
A/μs
-
220
-
ns
-
17
-
ns
Turn-on current slope
VCE = 400 V, IC = 80 A,
RG = 5 Ω, VGE = 15 V,
see Figure 28
Turn-off delay time
Current fall time
Eon(1)
Turn-on switching losses
-
1.8
-
mJ
Eoff(2)
Turn-off switching losses
-
1
-
mJ
Total switching losses
-
2.8
-
mJ
Turn-on delay time
-
60
-
ns
Current rise time
-
30
-
ns
-
2100
-
A/μs
-
240
-
ns
-
22
-
ns
Ets
td(on)
tr
(di/dt)on
td(off)
tf
Turn-on current slope
VCE = 400 V, IC = 80 A,
RG = 5 Ω, VGE = 15 V,
TJ = 175 °C, see Figure 28
Turn-off delay time
Current fall time
Eon(1)
Turn-on switching losses
-
3.8
-
mJ
Eoff(2)
Turn-off switching losses
-
1.25
-
mJ
Total switching losses
-
5.05
-
mJ
Ets
1.
Parameter
Energy losses include reverse recovery of the diode.
2. Turn-off losses include also the tail of the collector current.
DocID024362 Rev 2
5/18
Electrical characteristics
STGW80V60DF, STGWT80V60DF
Table 7. Diode switching characteristics (inductive load)
Symbol
6/18
Parameter
Test conditions
trr
Reverse recovery time
Qrr
Reverse recovery charge
IF = 80 A, VR = 400 V,
di/dt = 1000 A/μs,
VGE = 15 V, see Figure 28
Min.
Typ.
Max.
Unit
-
60
-
ns
-
112
-
nC
-
3.6
-
A
-
140
-
A/μs
Irrm
Reverse recovery current
dIrr/ /dt
Peak rate of fall of reverse
recovery current during tb
Err
Reverse recovery energy
-
70
-
μJ
trr
Reverse recovery time
-
340
-
ns
Qrr
Reverse recovery charge
-
2200
-
nC
Irrm
Reverse recovery current
-
13
-
A
dIrr/ /dt
Peak rate of fall of reverse
recovery current during tb
-
70
-
A/μs
Err
Reverse recovery energy
-
880
-
μJ
IF = 80 A, VR = 400 V,
di/dt = 1000 A/μs, VGE = 15
V; TJ = 175 °C
see Figure 28
DocID024362 Rev 2
STGW80V60DF, STGWT80V60DF
2.1
Electrical characteristics
Electrical characteristics (curves)
Figure 2. Power dissipation vs. case
temperature
GIPD041120131017FSR
Ptot
(W)
Figure 3. Collector current vs. case temperature
400
120
300
90
200
60
100
30
0
0
25
50
GIPD041120131118FSR
IC
(A)
11V
VGE=15V
9V
VGE ≥ 15V, TJ ≤ 175 °C
0
0
75 100 125 150 175 TC(°C)
Figure 4. Output characteristics (TJ = 25°C)
GIPD011020131024FSR
IC
(A)
50
25
75 100 125 150 175 TC(°C)
Figure 5. Output characteristics (TJ = 175°C)
GIPD281020131423FSR
IC
(A)
VGE=15V
120
120
80
80
40
40
13V
11V
9V
7V
0
0
1
2
3
4
Figure 6. VCE(sat) vs. junction temperature
GIPD041120131129FSR
VCE(sat)
(V)
0
0
VCE(V)
IC= 160A
VCE(V)
GIPD041120131136FSR
VCE(sat)
(V)
VGE= 15V
TJ= 175°C
3.5
3
3
IC= 80A
2.5
2.5
2
2
1.5
1
-50
4
3
Figure 7. VCE(sat) vs. collector current
VGE= 15V
3.5
2
1
1.5
IC= 40A
0
50
100
150
TJ= 25°C
TJ(°C)
DocID024362 Rev 2
1
20
TJ= -40°C
40
60
80
100 120
140
IC(A)
7/18
Electrical characteristics
STGW80V60DF, STGWT80V60DF
Figure 8. Collector current vs. switching
frequency
GIPD041120131144FSR
Ic [A]
160
Figure 9. Forward bias safe operating area
GIPD041120131152FSR
IC
(A)
Tc=80°C
100
120
Tc=100 °C
10 μs
80
10
40
rectangular current shape,
(duty cycle=0.5, VCC = 400V, RG=4.7 Ω,
VGE = 0/15 V, TJ =175°C)
0
1
1 ms
1
1
f [kHz]
10
Figure 10. Transfer characteristics
GIPD041120131324FSR
IC
(A)
100 μs
Single pulse
Tc= 25°C, TJ
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