STGWA19NC60HD

STGWA19NC60HD Datasheet 31 A, 600 V, fast IGBT with UltraFAST diode Features • Low on-voltage drop (VCE(sat)) • Very soft UltraFAST recovery anti-parallel diode Applications TO-247 long leads • • High frequency motor drives SMPS and PFC in both hard switch and resonant topologies Description This device uses the advanced PowerMESH process resulting in an excellent tradeoff between switching performance and low on-state behavior. SC12850_DIODE_IGBT Product status link STGWA19NC60HD Product summary Order code STGWA19NC60HD Marking GWA19NC60HD Package TO-247 long leads Packing Tube DS8654 - Rev 2 - May 2022 For further information contact your local STMicroelectronics sales office. www.st.com STGWA19NC60HD Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0 V) 600 V Continuous collector current at TC = 25 °C 52 Continuous collector current at TC = 100 °C 31 ICL(2) Turn-off latching current 40 A ICP(3) Pulsed collector current 60 A VGE Gate-emitter voltage ±20 V Diode RMS forward current at TC = 25 °C 20 A IFSM Surge not repetitive forward current, tP = 10 ms sinusoidal 50 A PTOT Total power dissipation at TC = 25 °C 208 W TJ Operating junction temperature range VCES IC(1) IF TSTG 1. Parameter -55 to 150 Storage temperature range Calculated according to the iterative formula: IC TC = A °C °C T J max − TC Rtℎj − C × VCE sat max T J max , IC TC 2. Vclamp = 80% VCES, TJ =150 °C, RG = 10 Ω, VGE = 15 V. 3. Pulse width limited by maximum junction temperature and turn-off within RBSOA. Table 2. Thermal data Symbol RthJC RthJA DS8654 - Rev 2 Parameter Value Unit Thermal resistance, junction-to-case IGBT 0.6 °C/W Thermal resistance, junction-to-case diode 3 °C/W Thermal resistance, junction-to-ambient 50 °C/W page 2/14 STGWA19NC60HD Electrical characteristics 2 Electrical characteristics TJ = 25 °C unless otherwise specified Table 3. Static Symbol V(BR)CES VCE(sat) Parameter Collector-emitter breakdown voltage Collector-emitter saturation voltage Test conditions VGE = 0 V, IC = 1 mA Typ. VGE = 15 V, IC = 15 A 2 VGE = 15 V, IC = 30 A, TJ= 100 °C 2.5 VGE = 15 V, IC = 12 A, TJ= 125 °C 1.6 VCE = VGE, IC = 250 μA ICES Collector cut-off current IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V Forward transconductance VCE = 15 V, IC = 12 A Unit V 1.8 Gate threshold voltage Max. 600 VGE = 15 V, IC = 12 A VGE(th) gfs Min. 3.75 VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 125 °C (1) 2.5 V 5.75 V 150 µA 1 mA ±100 nA 5 S 1. Specified by design, not tested in production. Table 4. Dynamic Symbol DS8654 - Rev 2 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 V VCE = 390 V, IC = 12 A, VGE = 15 V (see Figure 17. Gate charge test circuit) Min. Typ. Max. - 1180 - - 130 - - 36 - - 53 - - 10 - - 23 - Unit pF nC page 3/14 STGWA19NC60HD Electrical characteristics Table 5. Switching on/off (inductive load) Symbol td(on) Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time VCC = 390 V, IC = 12 A, - 25 - ns Current rise time RG = 10 Ω, VGE = 15 V - 7 - ns Turn-on current slope (see Figure 16. Test circuit for inductive load switching and Figure 18. Switching waveform) - 1600 - A/μs Turn-on delay time VCC = 390 V, IC = 12 A, - 24 - ns Current rise time RG = 10 Ω, VGE = 15 V, TJ = 125 °C - 8 - ns Turn-on current slope (see Figure 16. Test circuit for inductive load switching and Figure 18. Switching waveform) - 1400 - A/μs tr(Voff) Off voltage rise time VCC = 390 V, IC = 12 A, - 27 - ns td(off) Turn-off delay time RG = 10 Ω, VGE = 15 V - 97 - ns Current fall time (see Figure 16. Test circuit for inductive load switching and Figure 18. Switching waveform) - 73 - ns tr(Voff) Off voltage rise time VCC = 390 V, IC = 12 A, - 58 - ns td(off) Turn-off delay time RG = 10 Ω, VGE = 15 V, TJ = 125 °C - 144 - ns Current fall time (see Figure 16. Test circuit for inductive load switching and Figure 18. Switching waveform) - 128 - ns Min. Typ. Max. Unit tr (di/dt)on td(on) tr (di/dt)on tf tf Table 6. Switching energy (inductive load) Symbol Parameter Test conditions Eon Turn-on switching energy VCC = 390 V, IC = 12 A, - 85 - μJ Eoff(1) Turn-off switching energy RG = 10 Ω, VGE = 15 V - 189 - μJ Ets Total switching energy (see Figure 16. Test circuit for inductive load switching) - 274 - μJ Eon Turn-on switching energy VCC = 390 V, IC = 12 A, - 187 - μJ Eoff(1) Turn-off switching energy RG = 10 Ω, VGE = 15 V, TJ = 125 °C - 407 - μJ Total switching energy (see Figure 16. Test circuit for inductive load switching) - 594 - μJ Ets 1. Including the tail of the collector current. DS8654 - Rev 2 page 4/14 STGWA19NC60HD Electrical characteristics Table 7. Collector-emitter diode Symbol DS8654 - Rev 2 Parameter VF Forward on-voltage trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current Test conditions Min. Typ. Max. Unit IF = 12 A - 2.6 - V IF = 12 A, TJ = 125 °C - 2.1 - V - 31 - ns - 30 - nC - 2 - A - 59 - ns - 102 - nC - 4 - A IF = 12 A, VR = 40 V, TJ = 25 °C, di/dt =100 A/μs (see Figure 19. Diode reverse recovery waveform) IF = 12 A, VR = 40 V, TJ = 125 °C, di/dt =100 A/μs (see Figure 19. Diode reverse recovery waveform) page 5/14 STGWA19NC60HD Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Output characteristics Figure 2. Transfer characteristics Figure 3. Transconductance Figure 4. Collector-emitter on voltage vs temperature Figure 5. Gate charge vs gate-source voltage Figure 6. Capacitance variations DS8654 - Rev 2 page 6/14 STGWA19NC60HD Electrical characteristics (curves) Figure 7. Normalized gate threshold voltage vs temperature Figure 8. Collector-emitter on voltage vs collector current Figure 9. Normalized breakdown voltage vs temperature Figure 10. Switching energy vs temperature Figure 11. Switching energy vs gate resistance Figure 12. Switching energy vs collector current DS8654 - Rev 2 page 7/14 STGWA19NC60HD Electrical characteristics (curves) Figure 13. Turn-off SOA Figure 14. Thermal impedance Figure 15. Forward voltage drop vs. forward current 50 IFM(A) 45 40 Tj=125°C (ma ximum va lue s ) 35 30 Tj=125°C (typica l va lue s ) 25 20 Tj=25°C (ma ximum va lue s ) 15 10 5 VFM(V) 0 0 DS8654 - Rev 2 1 2 3 4 5 6 page 8/14 STGWA19NC60HD Test circuits 3 Test circuits Figure 16. Test circuit for inductive load switching C A Figure 17. Gate charge test circuit A k L=100 µH G E B B 3.3 µF C G + k RG 1000 µF VCC k D.U.T k E k k AM01505v1 AM01504v1 Figure 18. Switching waveform Figure 19. Diode reverse recovery waveform 90% 10% VG 90% VCE 10% tr(Voff) tcross 25 90% IC td(on) ton td(off) tr(Ion) 10% tf toff AM01506v1 DS8654 - Rev 2 page 9/14 STGWA19NC60HD Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO-247 long leads package information Figure 20. TO-247 long leads package outline 8463846_3 DS8654 - Rev 2 page 10/14 STGWA19NC60HD TO-247 long leads package information Table 8. TO-247 long leads package mechanical data Dim. mm Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 1.26 b2 3.25 b3 2.25 c 0.59 0.66 D 20.90 21.00 21.10 E 15.70 15.80 15.90 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 5.34 5.44 5.54 L 19.80 19.92 20.10 L1 P 3.50 Q 5.60 S 6.05 aaa DS8654 - Rev 2 4.30 3.60 3.70 6.00 6.15 6.25 0.04 0.10 page 11/14 STGWA19NC60HD Revision history Table 9. Document revision history DS8654 - Rev 2 Date Revision 14-Sep-2011 1 02-May-2022 2 Changes First release. Updated Section 4.1 TO-247 long leads package information Minor text changes. page 12/14 STGWA19NC60HD Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 4.1 TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 DS8654 - Rev 2 page 13/14 STGWA19NC60HD IMPORTANT NOTICE – READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2022 STMicroelectronics – All rights reserved DS8654 - Rev 2 page 14/14