STGWA25H120F2

STGW25H120F2, STGWA25H120F2 Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE(sat) = 2.1 V (typ.) @ IC = 25 A  72      72ORQJOHDGV • 5 µs minimum short circuit withstand time at TJ=150 °C • Tight parameters distribution • Safe paralleling • Low thermal resistance Figure 1. Internal schematic diagram Applications • Uninterruptible power supply C (2) • Welding machines • Photovoltaic inverters • Power factor correction • High frequency converters G (1) Description SC12850 These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. E (3) Table 1. Device summary Order code Marking Package Packaging STGW25H120F2 G25H120F2 TO-247 Tube STGWA25H120F2 G25H120F2 TO-247 long leads Tube March 2015 This is information on a product in full production. DocID026003 Rev 4 1/17 www.st.com 17 Contents STGW25H120F2, STGWA25H120F2 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 2/17 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.1 TO-247, package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.2 TO-247 long leads, package information . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 DocID026003 Rev 4 STGW25H120F2, STGWA25H120F2 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VCES Parameter Collector-emitter voltage (VGE = 0) Value Unit 1200 V IC Continuous collector current at TC = 25 °C 50 A IC Continuous collector current at TC = 100 °C 25 A ICP(1) Pulsed collector current 100 A VGE Gate-emitter voltage ±20 V PTOT Total dissipation at TC = 25 °C 375 W TSTG Storage temperature range -55 to 150 °C Operating junction temperature -55 to 175 °C Value Unit TJ 1. Pulse width limited by maximum junction temperature Table 3. Thermal data Symbol Parameter RthJC Thermal resistance junction-case 0.4 °C/W RthJA Thermal resistance junction-ambient 50 °C/W DocID026003 Rev 4 3/17 Electrical characteristics 2 STGW25H120F2, STGWA25H120F2 Electrical characteristics TJ = 25 °C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA Min. Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current (VGE = 0) IGES Gate-emitter leakage current (VCE = 0) Unit V 2.1 VGE = 15 V, IC = 25 A Collector-emitter saturation TJ = 125 °C voltage VGE = 15 V, IC = 25 A TJ = 175 °C VGE(th) Max. 1200 VGE = 15 V, IC = 25 A VCE(sat) Typ. 2.6 2.4 V 2.5 5 6 7 V VCE = 1200 V 25 µA VGE = ± 20 V 250 nA Table 5. Dynamic characteristics Symbol 4/17 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 VCC = 960 V, IC = 25 A, VGE = 15 V, see Figure 23 Qge Gate-emitter charge Qgc Gate-collector charge DocID026003 Rev 4 Min. Typ. Max. Unit - 2010 - pF - 146 - pF - 49 - pF - 100 - nC - 11 - nC - 52 - nC STGW25H120F2, STGWA25H120F2 Electrical characteristics Table 6. Switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Test conditions Min. Typ. Max. Unit Turn-on delay time - 29 - ns Current rise time - 12 - ns - 1774 - A/µs 130 - ns - 106 - ns Turn-on current slope VCE = 600 V, IC = 25 A, RG = 10 Ω, VGE = 15 V, see Figure 22 Turn-off delay time Current fall time Eon(1) Turn-on switching losses - 0.6 - mJ Eoff(2) Turn-off switching losses - 0.7 - mJ Total switching losses - 1.3 - mJ Turn-on delay time - 27.5 - ns Current rise time - 13.5 - ns Turn-on current slope - 1522 - A/µs - 139 - ns - 200 - ns Ets td(on) tr (di/dt)on td(off) tf 1. Parameter VCE = 600 V, IC = 25 A, RG = 10 Ω, VGE = 15 V, TJ = 175 °C, see Figure 22 Turn-off delay time Current fall time Eon(1) Turn-on switching losses - 1.05 - mJ Eoff(2) Turn-off switching losses - 1.65 - mJ Ets Total switching losses - 2.7 - mJ tsc Short-circuit withstand time - μs VCE = 600 V, VGE = 15 V, TJ = 150 °C, 5 Energy losses include reverse recovery of the external diode. 2. Turn-off losses include also the tail of the collector current. DocID026003 Rev 4 5/17 Electrical characteristics 2.1 STGW25H120F2, STGWA25H120F2 Electrical characteristics (curves) Figure 2. Power dissipation vs. case temperature *,3*)65 3WRW : 9*(•97 -”ƒ&  Figure 3. Collector current vs. case temperature *,3*)65 ,& $ 9*(•97 -”ƒ&                Figure 4. Output characteristics (TJ = 25°C) *,3*)65 ,& $        7&ƒ& 9 9*( 9 9         7&ƒ& Figure 5. Output characteristics (TJ = 175°C) *,3*)65 ,& $ 9 9  9*( 9 9   9       9      *,3*)65 9&(VDW 9  ,& $ 9*( 9   9&(9 Figure 6. VCE(sat) vs. junction temperature 9    9&(9 Figure 7. VCE(sat) vs. collector current *,3*)65 9&(VDW 9  7- ƒ& 9*( 9     7- ƒ&   ,& $ 7- ƒ&   ,& $    6/17       7-ƒ&  DocID026003 Rev 4      ,&$ STGW25H120F2, STGWA25H120F2 Electrical characteristics Figure 8. Collector current vs. switching frequency *,3*)65 ,F>$@ Figure 9. Forward bias safe operating area *,3*)65 ,& $  7F ƒ&   —V  7F  ƒ&  —V   —V   UHFWDQJXODUFXUUHQWVKDSH GXW\F\FOH 9&& 95*  Ÿ 9*( 97- ƒ&    I>N+]@  Figure 10. Transfer characteristics *,3*)65 ,& $ 9&( 9   PV 6LQJOHSXOVH 7F ƒ&7 -”ƒ& 9*( 9      9&(9 Figure 11. Normalized VGE(th) vs junction temperature *,3*)65 9*(WK QRUP  7- ƒ& ,& P$ 9&( 9*(    7- ƒ&             Figure 12. Normalized V(BR)CES vs. junction temperature *,3*)65 9%5&(6 QRUP   9*(9     7-ƒ& Figure 13. Capacitance variation *,3*)65 & S)  &LHV ,& P$     &RHV  &UHV     I 0+]9*(      7-ƒ& DocID026003 Rev 4      9&(9 7/17 Electrical characteristics STGW25H120F2, STGWA25H120F2 Figure 14. Gate charge vs. gate-emitter voltage *,3*)65 9*( 9  Figure 15. Switching loss vs collector current *,3*)65 ( —- 9&& 99 *( 9 5* ȍ7- ƒ&  ,& $ ,*( P$ 9&& 9   (2))  (21            Figure 16. Switching loss vs gate resistance ( —-    4JQ& *,3*)65 9&& 99 *( 9 ,& $7 - ƒ&      ,&$ Figure 17. Switching loss vs temperature *,3*)65 ( —- 9&& 99 *( 9 5* ȍ,& $     (2)) (2))  (21 (21            Figure 18. Switching loss vs collector-emitter voltage ( —-   5*ȍ    Figure 19. Switching times vs. collector current *,3*)65 7- ƒ&9*( 9 5* ȍ,& $ W QV *,3*)65 7- ƒ&9*( 9 5* ȍ9&& 9 WI   7-ƒ&   (2))  WGRII WGRQ  (21   WU     8/17    9&(9 DocID026003 Rev 4        ,&$ STGW25H120F2, STGWA25H120F2 Electrical characteristics Figure 20. Switching times vs. gate resistance *,3*)65 W QV WGRII WI  WGRQ WU  7- ƒ&9*( 9 ,& $9&& 9       5*ȍ DocID026003 Rev 4 9/17 Electrical characteristics STGW25H120F2, STGWA25H120F2 Figure 21. Thermal impedance ZthTO2T_A K d=0.5 0.2 0.1 10-1 0.05 0.02 0.01 Single pulse -2 10 10-5 10/17 10-4 10-3 DocID026003 Rev 4 10-2 10-1 tp (s) STGW25H120F2, STGWA25H120F2 3 Test circuits Test circuits Figure 22. Test circuit for inductive load switching Figure 23. Gate charge test circuit k k k k k k AM01504v1 AM01505v1 Figure 24. Switching waveform 90% 10% VG 90% VCE 10% Tr(Voff) Tcross 90% IC 10% Td(off) Td(on) Tr(Ion) Ton Tf Toff AM01506v1 DocID026003 Rev 4 11/17 Package information 4 STGW25H120F2, STGWA25H120F2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 TO-247, package information Figure 25. TO-247 outline 0075325_H 12/17 DocID026003 Rev 4 STGW25H120F2, STGWA25H120F2 Package information Table 7. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 DocID026003 Rev 4 5.70 13/17 Package information 4.2 STGW25H120F2, STGWA25H120F2 TO-247 long leads, package information Figure 26. TO-247 long leads outline 8463846_A_F 14/17 DocID026003 Rev 4 STGW25H120F2, STGWA25H120F2 Package information Table 8. TO-247 long leads mechanical data mm Dim. Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 1.26 b2 3.25 b3 2.25 c 0.59 0.66 D 20.90 21.00 21.10 E 15.70 15.80 15.90 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 5.34 5.44 5.54 L 19.80 19.92 20.10 L1 4.30 P 3.50 Q 5.60 S 6.05 3.60 3.70 6.00 6.15 DocID026003 Rev 4 6.25 15/17 Revision history 5 STGW25H120F2, STGWA25H120F2 Revision history Table 9. Document revision history 16/17 Date Revision Changes 28-Feb-2014 1 Initial release. 31-Mar-2014 2 Document status changed from preliminary to production data. Updated Table 4: Static characteristics and Table 6: Switching characteristics (inductive load). Added Section 2.1: Electrical characteristics (curves). 06-Mar-2015 3 Added 4.2: TO-247 long leads, package information Updated Features and Figure 23.: Gate charge test circuit Minor text changes 23-Mar-2015 4 Removed figures with diode Minor text changes. DocID026003 Rev 4 STGW25H120F2, STGWA25H120F2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved DocID026003 Rev 4 17/17